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131. 发明申请

US20110033803A1 PATTERNING PROCESS AND RESIST COMPOSITION 有权
标题翻译：绘图工艺和耐腐蚀组合物
公开(公告)号：US20110033803A1
公开(公告)日：2011-02-10
申请号：US12849344
申请日：2010-08-03
申请人： Jun Hatakeyama , Kazuhiro Katayama , Youichi Ohsawa , Masaki Ohashi
发明人： Jun Hatakeyama , Kazuhiro Katayama , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/004 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
摘要翻译：通过将包含含内含重复单元，含酸不稳定基团的重复单元和含氨基甲酸酯的重复单元的共聚物和光致酸产生剂的第一正性抗蚀剂组合物涂布在基材上以形成第一抗蚀剂膜，形成图案形成图案曝光，PEB和显影以形成第一抗蚀剂图案，将第一抗蚀剂图案加热至酸失活，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂布到第一抗蚀剂图案承载基底上以形成第二抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。

132. 发明申请

US20100297554A1 RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：电阻修饰组合物和图案形成工艺
公开(公告)号：US20100297554A1
公开(公告)日：2010-11-25
申请号：US12786759
申请日：2010-05-25
申请人： Takeru Watanabe , Masashi Iio , Kazuhiro Katayama , Jun Hatakeyama , Tsunehiro Nishi , Takeshi Kinsho
发明人： Takeru Watanabe , Masashi Iio , Kazuhiro Katayama , Jun Hatakeyama , Tsunehiro Nishi , Takeshi Kinsho
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/0046 , G03F7/2041 , G03F7/40
摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent.
摘要翻译：图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。抗蚀剂改性组合物包含氨基甲酸酯化合物和溶剂。

133. 发明申请

US20100203457A1 PATTERNING PROCESS 有权
标题翻译：绘图过程
公开(公告)号：US20100203457A1
公开(公告)日：2010-08-12
申请号：US12705206
申请日：2010-02-12
申请人： Jun Hatakeyama
发明人： Jun Hatakeyama
IPC分类号： G03F7/20
CPC分类号： G03F1/32 , G03F1/36
摘要： A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask including a lattice-like first shifter and a second shifter arrayed on the first shifter and consisting of lines which are thicker than the line width of the first shifter, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.
摘要翻译：通过将包含含有酸不稳定基团的重复单元和光致酸产生剂的树脂的化学放大正性抗蚀剂组合物涂布在基材上，干燥以形成抗蚀剂膜，将抗蚀剂膜暴露于通过相的高能量辐射而形成图案移位掩模，包括格子状的第一移位器和排列在第一移位器上的第二移位器，并且由比第一移位器PEB的线宽厚的线组成，以形成正图案，照亮或加热正图案到消除酸不稳定基团以增加碱溶性并引发交联以赋予耐溶剂性，涂覆反转膜，并将阳性图案溶解在碱性湿蚀刻剂中以通过正/负反转形成图案。

134. 发明申请

US20100178618A1 PATTERNING PROCESS 有权
标题翻译：绘图过程
公开(公告)号：US20100178618A1
公开(公告)日：2010-07-15
申请号：US12686836
申请日：2010-01-13
申请人： Jun Hatakeyama , Takao Yoshihara , Kazuhiro Katayama
发明人： Jun Hatakeyama , Takao Yoshihara , Kazuhiro Katayama
IPC分类号： G03F7/20
CPC分类号： G03F7/0397 , G03F1/26 , G03F7/0046 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.
摘要翻译：通过将包含含有酸不稳定基团的重复单元和光致酸产生剂的树脂的化学放大正性抗蚀剂组合物涂布在基材上，干燥以形成抗蚀剂膜，将抗蚀剂膜暴露于通过相的高能量辐射而形成图案具有晶格状移位器阵列PEB，显影以形成阳性图案，照亮或加热阳性图案以消除酸不稳定基团以增加碱溶性并引发交联以赋予耐溶剂性，涂覆反转膜，和将阳性图案溶解在碱性湿蚀刻剂中，以通过正/负反转形成图案。

135. 发明授权

US07655378B2 Negative resist composition and patterning process using the same 有权
标题翻译：负光刻胶组合物和使用其的图案化工艺
公开(公告)号：US07655378B2
公开(公告)日：2010-02-02
申请号：US11808706
申请日：2007-06-12
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
IPC分类号： G03F7/038 , G03F7/004 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0382 , C08F220/26 , C08F220/28 , C08F220/38 , Y10S430/106 , Y10S430/108
摘要： There is disclosed a negative resist composition comprising, at least, a polymer comprising a repeating unit of hydroxy vinylnaphthalene represented by the following general formula (1). There can be provided a negative resist composition, in particular, a chemically amplified negative resist composition that can exhibit higher resolution than conventional hydroxy styrene or novolac negative resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; and a patterning process that uses the resist composition.
摘要翻译：公开了一种负性抗蚀剂组合物，其包含至少包含由以下通式（1）表示的羟基乙烯基萘的重复单元的聚合物。可以提供负的抗蚀剂组合物，特别是化学放大的负性抗蚀剂组合物，其可以表现出比常规羟基苯乙烯或酚醛清漆阴性抗蚀剂组合物更高的分辨率，其在曝光后提供优异的图案轮廓并且表现出优异的耐蚀刻性; 以及使用抗蚀剂组合物的图案化工艺。

136. 发明申请

US20090297979A1 Polymerizable compound, polymer, positive resist composition, and patterning process using the same 有权
标题翻译：可聚合化合物，聚合物，正性抗蚀剂组合物和使用其的图案化工艺
公开(公告)号：US20090297979A1
公开(公告)日：2009-12-03
申请号：US12453665
申请日：2009-05-18
申请人： Jun Hatakeyama , Takeru Watanabe , Seiichiro Tachibana
发明人： Jun Hatakeyama , Takeru Watanabe , Seiichiro Tachibana
IPC分类号： G03F7/20 , C07C69/767 , C07C69/52 , C08F18/02 , C08F24/00 , G03F7/004
CPC分类号： C07C69/54 , C07C69/67 , C07C69/76 , C07C2602/08 , C07C2602/10 , C08F220/28 , C08F220/30 , C08F220/38 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/114
摘要： The present invention provides; a polymer suitable as a base resin for a positive resist composition, in particular a chemically amplified positive resist composition, having a higher resolution, a larger exposure allowance, a smaller sparse-dense size difference, a better process applicability, a better pattern configuration after exposure, and in addition, a further excellent etching resistance, than a conventional positive resist; a positive resist composition using the same; a patterning process; and a novel polymerizable compound to obtain a polymer like this.The present invention was accomplished by a polymer whose hydrogen atom of at least a carboxyl group is substituted by an acid labile group represented by the following general formula (2), a positive resist composition using the same, a patterning process, and a novel polymerizable compound to obtain a polymer like this.
摘要翻译：本发明提供：适合作为正性抗蚀剂组合物的基础树脂的聚合物，特别是化学放大正性抗蚀剂组合物，具有更高的分辨率，更大的曝光容限，更小的稀疏密度尺寸差异，更好的工艺适用性，更好的图案配置曝光，此外，比传统的正性抗蚀剂具有更好的耐蚀刻性; 使用其的正性抗蚀剂组合物; 图案化过程; 和新型聚合性化合物，得到这样的聚合物。本发明是由至少具有羧基的氢原子被下述通式（2）表示的酸不稳定基团取代的聚合物，使用其的正性抗蚀剂组合物，图案化工艺和新型可聚合的化合物以获得这样的聚合物。

137. 发明申请

US20090286188A1 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US20090286188A1
公开(公告)日：2009-11-19
申请号：US12453241
申请日：2009-05-04
申请人： Jun Hatakeyama , Tsutomu Ogihara , Mutsuo Nakashima , Kazuhiro Katayama
发明人： Jun Hatakeyama , Tsutomu Ogihara , Mutsuo Nakashima , Kazuhiro Katayama
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/0042 , G03F7/0043 , G03F7/0397 , G03F7/0757 , G03F7/0758 , G03F7/2024 , G03F7/40 , Y10S430/106 , Y10S430/114 , Y10S430/115
摘要： The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid.A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.
摘要翻译：本发明提供了一种图案化工艺，其中针对用于形成反转膜的组合物的有机溶剂的电阻呈现为正向图案，并且确保了对碱性蚀刻液的溶解性，从而通过使用碱性蚀刻液进行湿式蚀刻，能够最终通过正负反转获得负像。使用正负反转的本发明的抗蚀剂图案化工艺至少包括通过施加正型抗蚀剂组合物形成抗蚀剂膜的步骤; 通过曝光和显影抗蚀剂膜获得正图案的步骤; 将由此获得的正性抗蚀剂图案交联的步骤; 形成逆膜的步骤; 以及通过将碱性湿蚀刻液除去而将正极图案反转为负图案的步骤。

138. 发明申请

US20090202947A1 Positive resist composition and patterning process using the same 有权
标题翻译：正抗蚀剂组合物和使用其的图案化工艺
公开(公告)号：US20090202947A1
公开(公告)日：2009-08-13
申请号：US12320266
申请日：2009-01-22
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
IPC分类号： G03F7/004 , C08G65/38 , G03F7/20 , C08G8/02
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115
摘要： The present invention provides a polymer suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance; a positive resist composition using the polymer; and a patterning process.The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).
摘要翻译：本发明提供了适合作为正型抗蚀剂组合物的基础树脂的聚合物，特别是用于具有高灵敏度，高分辨率，曝光后的良好图案构造的化学增幅正性抗蚀剂组合物的基础树脂，另外还具有优异的蚀刻抵抗性; 使用该聚合物的正性抗蚀剂组合物; 和图案化过程。本发明的正型抗蚀剂组合物的特征在于，至少含有作为基础树脂的氢氧化铝基团的氢原子被下述通式（1）表示的酸不稳定基团取代的聚合物。

139. 发明授权

US07514202B2 Thermal acid generator, resist undercoat material and patterning process 有权
标题翻译：热酸发生器，抗蚀底漆材料和图案化工艺
公开(公告)号：US07514202B2
公开(公告)日：2009-04-07
申请号：US11797948
申请日：2007-05-09
申请人： Youichi Ohsawa , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7/004 , G03F7/30 , C07C309/06
CPC分类号： G03F7/11 , G03F7/0045 , H01L21/31116 , H01L21/31138 , H01L21/31144 , Y10S430/122 , Y10S430/126
摘要： A thermal acid generator of generating an acid on heating above 100° C. has formula: CF3CH(OCOR)CF2SO3−(R1)4N+ wherein R is alkyl or aryl, R1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.
摘要翻译：一种在100℃以上加热生成酸的热酸发生剂具有式：CF 3 CH（OCOR）CF 2 SO 3 - （R 1）4 N +，其中R是烷基或芳基，R 1是氢，烷基，链烯基，氧代烷基，芳基，芳烷基或芳氧基烷基，或者R1可以键合在一起形成具有N的环。产生的磺酸在分子内具有酯位点，从而可以在其中引入较大体积的大体积基团的酰基。热酸发生器提供足够的酸强度，由于高分子量而挥发性较低，并且确保成膜。在处理使用过的抗蚀剂液体时，可以将其转化为低浓度的化合物。

140. 发明授权

US07476486B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US07476486B2
公开(公告)日：2009-01-13
申请号：US11354128
申请日：2006-02-15
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
IPC分类号： G03C1/73 , G03F7/038 , G03F7/039
CPC分类号： G03F7/0392 , B82Y30/00 , G03F7/0382
摘要： A resist composition comprising a fullerene having five phenol derivatives is provided.
摘要翻译：提供了包含具有五个苯酚衍生物的富勒烯的抗蚀剂组合物。

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