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131. 发明申请

US20050247314A1 Humidifier with structure to prevent backflow of liquid through the humidifier inlet 有权
标题翻译：具有防止液体通过加湿器入口回流的结构的加湿器
公开(公告)号：US20050247314A1
公开(公告)日：2005-11-10
申请号：US11181807
申请日：2005-07-15
申请人： Alexander Virr , Ian Smith , Perry Lithgow , Richard Jones , Andrew Cheung
发明人： Alexander Virr , Ian Smith , Perry Lithgow , Richard Jones , Andrew Cheung
IPC分类号： F24F6/00 , A61M16/00 , A61M16/16 , A61M15/00 , A61M16/10
CPC分类号： A61M16/16 , A61M16/0066 , A61M16/109 , A61M2205/21 , Y10S261/65
摘要： A humidifier includes a base configured to retain a body of liquid therein, a top cover, and a seal disposed between the top cover and the base. At least a portion of the base is constructed of a heat conducting material. The top cover defines both an inlet and an outlet communicated with an interior of the base. The inlet is configured to receive pressurized breathable gas and the outlet is configured to deliver the pressurized breathable gas with added humidity.
摘要翻译：加湿器包括被配置为将液体保持在其中的基座，顶盖以及设置在顶盖和底座之间的密封件。基部的至少一部分由导热材料构成。顶盖限定与底座内部连通的入口和出口。入口被配置为接收加压的可透气气体，并且出口构造成输送具有增加的湿度的加压的可呼吸气体。

132. 发明申请

US20050220406A1 Athermal bragg grating 审中-公开
标题翻译：热电布拉格光栅
公开(公告)号：US20050220406A1
公开(公告)日：2005-10-06
申请号：US10813637
申请日：2004-03-31
申请人： Richard Jones , Oded Cohen , Ling Liao
发明人： Richard Jones , Oded Cohen , Ling Liao
IPC分类号： G02B6/10 , G02B6/12 , G02B6/124 , G02B6/136 , G02B6/34
CPC分类号： G02B6/136 , G02B6/124 , G02B2006/12097
摘要： Embodiments of the invention describe a silicon oxynitride Bragg grating disposed in a semiconductive layer on an insulating substrate. The grating may be formed of alternating silicon oxynitride elements that differ in a relative composition of oxygen and nitrogen. The different composition elements have different refractive indices that may vary within a desired range.
摘要翻译：本发明的实施例描述了设置在绝缘基板上的半导体层中的氮氧化硅布拉格光栅。光栅可以由氧和氮的相对组成不同而交替的氮氧化硅元素形成。不同的组成元素具有不同的折射率，其可以在期望的范围内变化。

133. 发明申请

US20050175305A1 Method and apparatus for polarization insensitive phase shifting of an optical beam in an optical device 失效
标题翻译：用于光学器件中的光束的偏振不敏感相移的方法和装置
公开(公告)号：US20050175305A1
公开(公告)日：2005-08-11
申请号：US10775737
申请日：2004-02-10
申请人： Ansheng Liu , Richard Jones , Mario Paniccia , Graham Reed
发明人： Ansheng Liu , Richard Jones , Mario Paniccia , Graham Reed
IPC分类号： G02F1/025 , G02B6/10
CPC分类号： G02F1/025 , G02F2203/06
摘要： An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.
摘要翻译：用于独立于偏振调制光束的相位的装置和方法。在一个实施例中，根据本发明的实施例的装置包括设置在半导体材料中的光波导的第一区域，具有第一导电类型的第一区域和设置在半导体材料中的光波导的第二区域，第二区域具有与第一导电类型相反的第二导电类型。该装置还包括设置在光波导的第一和第二区域之间的基本为V形的绝缘区域，其中大致V形的绝缘区域的顶点形成基本上平行于光束的光路的相交线，引导通过光波导。

134. 发明申请

US20050101711A1 Water soluble energy curable stereo-crosslinkable ionomer compositions 失效
标题翻译：水溶性能量可固化的立体交联离聚物组合物
公开(公告)号：US20050101711A1
公开(公告)日：2005-05-12
申请号：US10702313
申请日：2003-11-06
申请人： Volker Linzer , Richard Jones
发明人： Volker Linzer , Richard Jones
IPC分类号： C08F8/00 , C08F8/44 , C09D131/00 , C08L1/00
CPC分类号： C08F8/44 , C08F20/00
摘要： A homogenous, aqueous, energy curable, stereo cross linkable ionomer containing coating composition and a method of preparing same.
摘要翻译：一种均匀的含水可固化的可立体交联的含离子交联聚合物的涂料组合物及其制备方法。

135. 发明授权

US4654909A Hammer with stabilizer bar 失效
标题翻译：锤子与稳定杆
公开(公告)号：US4654909A
公开(公告)日：1987-04-07
申请号：US811764
申请日：1985-12-20
申请人： Richard Jones
发明人： Richard Jones
IPC分类号： B25C11/00 , B25D1/04 , B25F1/00
CPC分类号： B25F1/00 , B25C11/00 , B25D1/04
摘要： A hammer useful for driving tacks, or nails in normally inaccessible locations, or places. In brief, the new hammer can be characterized as including a central member having an arcuate lower face, and cross-members extended laterally outwardly from about the mid portion thereof to provide stability. An upper face of one terminal end of the central member provides a surface for directing a force against the head of a tack or nail to be driven, and the opposite terminal end of the central member provides a handle against which a force can be directed.
摘要翻译：用于驱动钉子的锤子，或者通常不可访问的位置的指甲或地方。简而言之，新的锤可以被表征为包括具有弧形下表面的中心构件，并且横向构件从其中部的中部横向向外延伸以提供稳定性。中心构件的一个终端的上表面提供用于将力抵靠待驱动的钉或钉的头部的表面，并且中心构件的相对的末端提供了能够被引导的力的手柄。

136. 发明公开

US20240195148A1 INTEGRATED SILICON (SI) TUNABLE LASER 审中-公开
公开(公告)号：US20240195148A1
公开(公告)日：2024-06-13
申请号：US18459184
申请日：2023-08-31
申请人： Ranjeet Kumar , Duanni Huang , Guan-Lin Su , Xinru Wu , Richard Jones , Haisheng Rong
发明人： Ranjeet Kumar , Duanni Huang , Guan-Lin Su , Xinru Wu , Richard Jones , Haisheng Rong
IPC分类号： H01S5/0687 , G02B6/125 , H01S5/00
CPC分类号： H01S5/0687 , G02B6/125 , H01S5/0085
摘要： Various embodiments described herein may relate to apparatuses, systems, techniques, and/or processes that are directed to tunable lasers. Specifically, embodiments herein may relate to chips that include both a tunable laser portion as well as a WLL portion on a same silicon substrate. Other embodiments may be described and/or claimed.

137. 发明授权

US09252118B2 CMOS-compatible gold-free contacts 有权
标题翻译： CMOS兼容的无金触点
公开(公告)号：US09252118B2
公开(公告)日：2016-02-02
申请号：US13995689
申请日：2011-12-22
申请人： Siddharth Jain , John Bowers , Matthew Sysak , John Heck , Ran Feldesh , Richard Jones , Yoel Shetrit , Michael Geva
发明人： Siddharth Jain , John Bowers , Matthew Sysak , John Heck , Ran Feldesh , Richard Jones , Yoel Shetrit , Michael Geva
IPC分类号： H01S5/042 , H01L23/00 , H01L21/8238 , H01L21/8258 , H01L21/285 , H01L29/45 , H01L27/12 , H01L29/20 , H01S5/02
CPC分类号： H01L24/45 , H01L21/28575 , H01L21/823814 , H01L21/823871 , H01L21/8258 , H01L27/1203 , H01L29/20 , H01L29/452 , H01L2224/45 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/12042 , H01S5/021 , H01S5/0425 , H01L2924/00 , H01L2224/45099 , H01L2224/43
摘要： A semiconductor metallurgy includes a ratio of germanium and palladium that provides low contact resistance to both n-type material and p-type material. The metallurgy allows for a contact that does not include gold and is compatible with mass-production CMOS techniques. The ratio of germanium and palladium can be achieved by stacking layers of the materials and annealing the stack, or simultaneously depositing the germanium and palladium on the material where the contact is to be manufactured.
摘要翻译：半导体冶金学包括对n型材料和p型材料提供低接触电阻的锗和钯的比例。冶金允许不包括金的接触，并且与大规模生产CMOS技术兼容。锗和钯的比例可以通过堆叠材料的层并退火叠层来实现，或者同时将锗和钯沉积在要制造接触的材料上。

138. 发明授权

US08874628B1 Systems and methods for projecting hierarchical storage management functions 有权
标题翻译：分级存储管理功能的系统和方法
公开(公告)号：US08874628B1
公开(公告)日：2014-10-28
申请号：US12579526
申请日：2009-10-15
申请人： Thomas Lanzatella , Laxmikant Gunda , Richard Jones
发明人： Thomas Lanzatella , Laxmikant Gunda , Richard Jones
IPC分类号： G06F17/00 , G06F17/30 , G06F15/16 , G06F13/00 , G06F11/00 , G06F11/16
CPC分类号： G06F17/00 , G06F3/0607 , G06F3/0649 , G06F3/067 , G06F3/0685 , G06F17/30 , G06F17/30221
摘要： A computer-implemented method for projecting hierarchical storage management functions may include enumerating objects stored on an endpoint system via an agent on the endpoint system. The computer-implemented method may also include transmitting, via a web service, information relating to the enumeration to a server. The computer-implemented method may further include receiving, via the web service, a hierarchical storage management policy from the server. The computer-implemented method may additionally include enacting the hierarchical storage management policy via the agent. Various other methods and systems are also disclosed.
摘要翻译：用于投影分层存储管理功能的计算机实现的方法可以包括经由端点系统上的代理枚举存储在端点系统上的对象。计算机实现的方法还可以包括经由web服务将与枚举相关的信息发送到服务器。计算机实现的方法还可以包括经由web服务从服务器接收分层存储管理策略。计算机实现的方法可以另外包括通过代理来执行分级存储管理策略。还公开了各种其它方法和系统。

139. 发明申请

US20120300796A1 HYBRID LASERS 审中-公开
标题翻译：混合激光
公开(公告)号：US20120300796A1
公开(公告)日：2012-11-29
申请号：US13118202
申请日：2011-05-27
申请人： Matthew N. Sysak , Richard Jones , Eugenia D. Eugenieva
发明人： Matthew N. Sysak , Richard Jones , Eugenia D. Eugenieva
IPC分类号： H01S3/30
CPC分类号： H01S5/1032 , B82Y20/00 , H01S5/021 , H01S5/026 , H01S5/14 , H01S5/141 , H01S5/3412 , H01S2301/166
摘要： Embodiments of the invention provide electrically pumped hybrid semiconductor lasers that are capable of being integrated into and with silicon-based CMOS (complementary metal-oxide semiconductor) devices. Hybrid laser active regions are comprised of multiple quantum wells or quantum dots. Devices according to embodiments of the invention are capable of being used to transfer data in and around personal computers, servers, and data centers as well as for longer-range data transmission.
摘要翻译：本发明的实施例提供能够集成到硅基CMOS（互补金属氧化物半导体）器件中的电泵浦混合半导体激光器。混合激光有源区域由多个量子阱或量子点组成。根据本发明的实施例的设备能够用于在个人计算机，服务器和数据中心内和周围传送数据以及用于更远程数据传输。

140. 发明申请

US20120189317A1 HYBRID III-V SILICON LASER FORMED BY DIRECT BONDING 有权
标题翻译：通过直接键合形成的混合III-V硅激光
公开(公告)号：US20120189317A1
公开(公告)日：2012-07-26
申请号：US13010232
申请日：2011-01-20
申请人： John Heck , Hanan Bar , Richard Jones , Hyundai Park
发明人： John Heck , Hanan Bar , Richard Jones , Hyundai Park
IPC分类号： H01S5/323 , H04B10/12 , H01S5/343
CPC分类号： H01S5/021 , H01S5/0215 , H01S5/0422 , H01S5/1032 , H01S5/2004 , H01S5/2205
摘要： Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.
摘要翻译：本文描述的是混合III-V硅激光器，其包括第一半导体区域，其包括来自III族，IV族或V族半导体的半导体材料的层，以形成有源区; 以及第二半导体区域，具有硅波导，并且通过在第一半导体区域的层的室温下直接接合而与第一半导体区域接合。

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