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    • 131. 发明申请
    • METHOD AND SYSTEM FOR ACQUIRING CHANNEL STATE INFORMATION
    • 获取信道状态信息的方法和系统
    • US20120207240A1
    • 2012-08-16
    • US13501553
    • 2010-11-02
    • Yijian ChenJun XuBo DaiRuyue LiJunfeng Zhang
    • Yijian ChenJun XuBo DaiRuyue LiJunfeng Zhang
    • H04B15/00
    • H04B7/0639H04B7/024H04B7/0417H04B7/0626H04B7/063
    • A method for acquiring channel state information is disclosed in the present invention, including: a user equipment (UE) reporting codebook index information and information about the total number of layers to a base station (eNB), wherein the codebook index information includes one of the following information: class 2 codebook index l; and class 1 codebook index i and index parameter j; and after receiving the codebook index information and information about the total number of layers sent by the UE, the base station obtaining a codeword in the manner of inquiring of a preset codebook list or in the manner of inquiring of the preset codebook list in conjunction with calculation according to the codebook index information and information about the total number of layers. A system for acquiring channel state information is also disclosed in the present invention.
    • 在本发明中公开了一种用于获取信道状态信息的方法,包括:向基站(eNB)报告码本索引信息和关于总层数的信息的用户设备(UE),其中码本索引信息包括 以下信息:class 2 codebook index l; 和1类码本索引i和索引参数j; 并且在接收到码本索引信息和关于由UE发送的总层数的信息之后,基站以查询预设码本列表的方式或以预设码本列表的查询方式结合获取码字 根据码本索引信息计算和关于总层数的信息。 本发明还公开了一种获取信道状态信息的系统。
    • 134. 发明申请
    • Method and Apparatus for Transmitting Uplink Control Signaling on Physical Uplink Shared Channel
    • 用于在物理上行链路共享信道上传输上行链路控制信令的方法和装置
    • US20120201212A1
    • 2012-08-09
    • US13391350
    • 2010-06-25
    • Shuqiang XiaWeiwei YangChunli LiangBo DaiJun Xu
    • Shuqiang XiaWeiwei YangChunli LiangBo DaiJun Xu
    • H04W72/04
    • H04W72/1268H04L1/0003H04L1/0009H04L1/0027H04L1/0028H04W72/1284H04W88/04
    • The present invention discloses a method for transmitting uplink control signaling in a Physical Uplink Shared Channel (PUSCH). The method includes: when two transport blocks/codewords are transmitted in the PUSCH, mapping uplink control signaling to the layer corresponding to one of the two transport blocks/codewords to transmit. The present invention also discloses an apparatus for transmitting uplink control signaling in the PUSCH. The apparatus includes: a mapping unit, used for mapping uplink control signaling to the layer corresponding to one of two transport blocks/codewords when the two transport blocks/codewords are transmitted in the PUSCH; and a transmission unit, used for transmitting the uplink control signaling. The present invention effectively solves the problem of transmitting uplink control signaling in the PUSCH when the PUSCH uses spatial multiplexing in an LTE-A system.
    • 本发明公开了一种在物理上行链路共享信道(PUSCH)中发送上行链路控制信令的方法。 该方法包括:当在PUSCH中发送两个传输块/码字时,将上行链路控制信令映射到与两个传输块/码字之一相对应的层以进行传输。 本发明还公开了一种用于在PUSCH中发送上行链路控制信令的装置。 该装置包括:映射单元,用于当在PUSCH中发送两个传输块/码字时,将上行链路控制信令映射到与两个传输块/码字之一相对应的层; 以及用于发送上行控制信令的发送单元。 当在LTE-A系统中使用空间复用时,本发明有效地解决了在PUSCH中发送上行控制信令的问题。
    • 139. 发明申请
    • SEMICONDUCTOR STRUCTURE
    • 半导体结构
    • US20110260173A1
    • 2011-10-27
    • US13120122
    • 2010-11-08
    • Jing WangJun XuLei Guo
    • Jing WangJun XuLei Guo
    • H01L29/78
    • H01L29/7391H01L29/1054H01L29/165H01L29/7833H01L29/785
    • A semiconductor structure is provided. The semiconductor structure may comprise a substrate (100); a buffer layer or an insulation layer (200) formed on the substrate; a first strained wide bandgap semiconductor material layer (400) formed on the buffer layer or the insulation layer; a strained narrow bandgap semiconductor material layer (500) formed on the first strained wide bandgap semiconductor material layer; a second strained wide bandgap semiconductor material layer (700) formed on the strained narrow bandgap semiconductor material layer; a gate stack (300) formed on the second strained wide bandgap semiconductor material layer; and a source and a drain (600) formed in the first strained wide bandgap semiconductor material layer, the strained narrow bandgap semiconductor material layer and the second strained wide bandgap semiconductor material layer respectively.
    • 提供半导体结构。 半导体结构可以包括衬底(100); 形成在所述基板上的缓冲层或绝缘层(200); 形成在缓冲层或绝缘层上的第一应变宽带隙半导体材料层(400) 形成在第一应变宽带隙半导体材料层上的应变窄带隙半导体材料层(500) 形成在应变窄带隙半导体材料层上的第二应变宽带隙半导体材料层(700) 形成在第二应变宽带隙半导体材料层上的栅叠层(300) 以及形成在第一应变宽带隙半导体材料层中的源极和漏极(600),应变窄带隙半导体材料层和第二应变宽带隙半导体材料层。