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    • 135. 发明申请
    • SEMICONDUCTOR STRUCTURE
    • 半导体结构
    • US20110260173A1
    • 2011-10-27
    • US13120122
    • 2010-11-08
    • Jing WangJun XuLei Guo
    • Jing WangJun XuLei Guo
    • H01L29/78
    • H01L29/7391H01L29/1054H01L29/165H01L29/7833H01L29/785
    • A semiconductor structure is provided. The semiconductor structure may comprise a substrate (100); a buffer layer or an insulation layer (200) formed on the substrate; a first strained wide bandgap semiconductor material layer (400) formed on the buffer layer or the insulation layer; a strained narrow bandgap semiconductor material layer (500) formed on the first strained wide bandgap semiconductor material layer; a second strained wide bandgap semiconductor material layer (700) formed on the strained narrow bandgap semiconductor material layer; a gate stack (300) formed on the second strained wide bandgap semiconductor material layer; and a source and a drain (600) formed in the first strained wide bandgap semiconductor material layer, the strained narrow bandgap semiconductor material layer and the second strained wide bandgap semiconductor material layer respectively.
    • 提供半导体结构。 半导体结构可以包括衬底(100); 形成在所述基板上的缓冲层或绝缘层(200); 形成在缓冲层或绝缘层上的第一应变宽带隙半导体材料层(400) 形成在第一应变宽带隙半导体材料层上的应变窄带隙半导体材料层(500) 形成在应变窄带隙半导体材料层上的第二应变宽带隙半导体材料层(700) 形成在第二应变宽带隙半导体材料层上的栅叠层(300) 以及形成在第一应变宽带隙半导体材料层中的源极和漏极(600),应变窄带隙半导体材料层和第二应变宽带隙半导体材料层。
    • 138. 发明申请
    • Ion mobility sensor system
    • 离子流动传感器系统
    • US20110068264A1
    • 2011-03-24
    • US12586619
    • 2009-09-23
    • Jun XuDavid B. WatsonWilliam B. Whitten
    • Jun XuDavid B. WatsonWilliam B. Whitten
    • H01J49/04H01J49/02B01D53/22
    • G01N27/622
    • An ion mobility sensor system including an ion mobility spectrometer and a differential mobility spectrometer coupled to the ion mobility spectrometer. The ion mobility spectrometer has a first chamber having first end and a second end extending along a first direction, and a first electrode system that generates a constant electric field parallel to the first direction. The differential mobility spectrometer includes a second chamber having a third end and a fourth end configured such that a fluid may flow in a second direction from the third end to the fourth end, and a second electrode system that generates an asymmetric electric field within an interior of the second chamber. Additionally, the ion mobility spectrometer and the differential mobility spectrometer form an interface region. Also, the first end and the third end are positioned facing one another so that the constant electric field enters the third end and overlaps the fluid flowing in the second direction.
    • 一种离子迁移率传感器系统,其包括耦合到离子迁移谱仪的离子迁移谱仪和差动迁移谱仪。 离子迁移谱仪具有第一室,其具有沿第一方向延伸的第一端和第二端;以及第一电极系统,其产生平行于第一方向的恒定电场。 差速迁移谱仪包括具有第三端和第四端的第二腔,第二腔被构造成使得流体可以在从第三端到第四端的第二方向上流动;以及第二电极系统,其在内部产生不对称电场 的第二个房间。 此外,离子迁移谱仪和差动迁移谱仪形成界面区域。 此外,第一端和第三端被定位成彼此面对,使得恒定电场进入第三端并与沿第二方向流动的流体重叠。
    • 140. 发明申请
    • ENCODING METHOD AND DEVICE FOR LOW DENSITY GENERATOR MATRIX CODES
    • 低密度发生器矩阵编码的编码方法和装置
    • US20100281332A1
    • 2010-11-04
    • US12810832
    • 2008-06-12
    • Jun XuSong LiJin XuZhifeng YuanYuanli FangXiangbiao YanLiujun Hu
    • Jun XuSong LiJin XuZhifeng YuanYuanli FangXiangbiao YanLiujun Hu
    • H03M13/05G06F11/10
    • H03M13/11H03M13/3761
    • The present invention discloses an encoding method and device for Low Density Generator Matrix Codes (LDGC). Wherein, the method comprises: construct an LDGC mother code set using a plurality of LDGC with code rate R0 and different code lengths, wherein the LDGC mother code set has a uniform base matrix Gbuniform={(gi, jb)uniform}kb×nb; obtain length L of an intermediate variable according to a relationship between length K of an information bit sequence to be encoded in the LDGC mother code set and length L of the intermediate variable; obtain an expanding factor z for processing the base matrix using the length of the intermediate variable and the number of rows in the base matrix; process the base matrix using the expanding factor to obtain a binary generator matrix Gtmp, the front L rows and front L columns of which compose a triangular matrix; modify the binary generator matrix to obtain a modified binary generator matrix; take a matrix Gldgc composed of L rows and the front N+L−K columns of the modified binary generator matrix as a generator matrix of the information bit sequence to encode the information bit sequence.
    • 本发明公开了一种低密度发生器矩阵码(LDGC)的编码方法和装置。 其中,该方法包括:使用多个LDGC构建LDGC母码集,码率为R0,码长不同,其中,LDGC母码组具有均匀的基本矩阵Gbuniform = {(gi,jb)uniform} kb×nb ; 根据LDGC母码组中要编码的信息比特序列的长度K与中间变量的长度L之间的关系,获得中间变量的长度L; 使用中间变量的长度和基本矩阵中的行数来获得用于处理基本矩阵的扩展因子z; 使用扩展因子处理基本矩阵以获得二进制生成矩阵Gtmp,其前L行和前L列组成三角矩阵; 修改二进制生成矩阵以获得修改后的二进制生成矩阵; 将由L行组成的矩阵Gldgc和修改后的二进制生成器矩阵的前N + L-K列作为信息比特序列的生成矩阵来编码信息比特序列。