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131. 发明申请

US20080214422A1 THINNER COMPOSITION AND METHOD OF REMOVING PHOTORESIST USING THE SAME 有权
标题翻译：薄膜组合物及其使用方法除去光电子体
公开(公告)号：US20080214422A1
公开(公告)日：2008-09-04
申请号：US12118778
申请日：2008-05-12
申请人： Seung-Hyun AHN , Eun-Mi BAE , Baik-Soon CHOI , Sang-Mun CHON , Dae-Joung KIM , Kwang-sub YOON , Sang-Kyu PARK , Jae-Ho KIM , Shi-Yong YI , Kyoung-Mi KIM , Yeu-Young YOUN
发明人： Seung-Hyun AHN , Eun-Mi BAE , Baik-Soon CHOI , Sang-Mun CHON , Dae-Joung KIM , Kwang-sub YOON , Sang-Kyu PARK , Jae-Ho KIM , Shi-Yong YI , Kyoung-Mi KIM , Yeu-Young YOUN
IPC分类号： G03F7/42
CPC分类号： C11D7/266 , C11D11/0047
摘要： A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.
摘要翻译：较薄的组合物包括丙二醇醚乙酸酯，2-羟基-2-甲基丙酸甲酯和酯化合物如乳酸乙酯，3-乙氧基丙酸乙酯或它们的混合物。

132. 发明授权

US07384823B2 Method for manufacturing a semiconductor device having a stabilized contact resistance 失效
标题翻译：具有稳定的接触电阻的半导体器件的制造方法
公开(公告)号：US07384823B2
公开(公告)日：2008-06-10
申请号：US11120573
申请日：2005-05-02
申请人： Hyun Ahn , Ju Hee Lee
发明人： Hyun Ahn , Ju Hee Lee
IPC分类号： H01L21/82 , H01L21/3205
CPC分类号： H01L21/76895 , H01L21/76877
摘要： Disclosed is a method for forming a storage node contact of a semiconductor device. In such a method, there is provided a substrate formed with gates and source/drain regions. A landing plug poly is formed between the gates, and an insulating interlayer is formed over the entire surface of the substrate including the landing plug poly and the gates. The insulating interlayer is then etched to form a storage node contact hole exposing the landing plug poly. Thereafter, the landing plug poly exposed through the storage node contact hole is removed. Finally, a polysilicon film is filled up within a vacant portion from which the landing plug poly is removed and the storage node contact hole above the vacant portion.
摘要翻译：公开了一种用于形成半导体器件的存储节点接触的方法。在这种方法中，提供了形成有栅极和源极/漏极区域的衬底。在栅极之间形成着色插塞多晶硅，并且在包括着陆插塞多晶硅和栅极的基板的整个表面上形成绝缘中间层。然后对绝缘中间层进行蚀刻以形成暴露着陆塞多晶硅的存储节点接触孔。此后，去除了通过存储节点接触孔暴露的着陆栓多孔。最后，将多晶硅膜填充在空出部分内，其中去除着陆栓多晶硅并且在空部分上方存储节点接触孔。

133. 发明申请

US20080075094A1 METHOD AND APPARATUS FOR USING AND RELAYING FRAMES OVER MOBILE MULTI-HOP RELAY SYSTEMS 审中-公开
标题翻译：移动多路继电器系统使用和继承框架的方法和装置
公开(公告)号：US20080075094A1
公开(公告)日：2008-03-27
申请号：US11860711
申请日：2007-09-25
申请人： Dong Hyun AHN , Choongil YEH , Young-il KIM
发明人： Dong Hyun AHN , Choongil YEH , Young-il KIM
IPC分类号： H04L12/28
CPC分类号： H04W72/1289 , H04B7/155 , H04W40/22 , H04W84/047
摘要： Provided are a method and apparatus for using and relaying multi-hop frames over mobile multi-hop relay (MMR) systems. According to the present invention, a base station in a MMR network determines the number and temporal length of unit frames to be included in a super frame, allocates channel periods for transmitting data having a communication request to uplink and downlink data channels of each unit frame, generates frame control information to be the same for each unit frame and transmits each piece of the frame control information for each unit frame together with downlink data to be transmitted. A relay station according to the present invention recognizes frame control information of a received unit frame, reorganizes the frame control information of the received unit frame in order to allow a base station and neighboring relay stations to transmit the same frame control information from a subsequent unit frame, transmits the reorganized frame control information through the subsequent unit frame to the neighboring relay stations, thereby preventing interference between the base station and the relay stations and waste of channels of the unit frame which is caused by retransmitting the frame control information.
摘要翻译：提供了一种在移动多跳中继（MMR）系统上使用和中继多跳帧的方法和装置。根据本发明，MMR网络中的基站确定要包括在超帧中的单元帧的数量和时间长度，将用于发送具有通信请求的数据的信道周期分配给每个单元帧的上行链路和下行链路数据信道生成对于每个单位帧相同的帧控制信息，并且将每个单位帧的每条帧控制信息连同发送的下行链路数据一起发送。根据本发明的中继站识别接收到的单元帧的帧控制信息，重新组合接收到的单元帧的帧控制信息，以便允许基站和相邻中继站从后续单元发送相同的帧控制信息通过后续单位帧将重组的帧控制信息发送到相邻中继站，由此防止基站与中继站之间的干扰，以及由重发帧控制信息引起的单位帧信道的浪费。

134. 发明申请

US20080058022A1 OPERATION MODE CONVERSION DEVICE, MOBILE COMMUNICATION TERMINAL HAVING THE OPERATION MODE CONVERSION DEVICE AND METHOD FOR CONVERTING OPERATION MODE USING THE SAME 有权
标题翻译：操作模式转换装置，具有操作模式转换装置的移动通信终端和使用其转换操作模式的方法
公开(公告)号：US20080058022A1
公开(公告)日：2008-03-06
申请号：US11849110
申请日：2007-08-31
申请人： KWANG-HYUN AHN
发明人： KWANG-HYUN AHN
IPC分类号： H04M1/00 , G06F3/041
CPC分类号： H04M1/0266 , G06F3/0362 , H04M1/233 , H04M2250/16
摘要： An operation mode conversion device, a mobile communication terminal having the same and a method for converting the operation mode are provided. According to an embodiment, a user interface element is provided with an input unit configured to generate a signal to switch a current operation mode to a selected operation mode upon being pressed by a user, the selected operation mode being set with respect to a position on the input unit, and a display area is located at a central portion of the input unit, the display area being configured to output information about the selected operation mode. The user can quickly perform menu navigation to convert the operation mode as desired, the information about the converted operation mode is conveniently viewed, and the overall size of the mobile phone can be minimized.
摘要翻译：提供了操作模式转换装置，具有该操作模式转换装置的移动通信终端和用于转换操作模式的方法。根据实施例，用户界面元件设置有输入单元，该输入单元被配置为在用户按下时产生用于将当前操作模式切换到所选择的操作模式的信号，所选择的操作模式被设置为相对于所述输入单元和显示区域位于所述输入单元的中央部分，所述显示区域被配置为输出关于所选择的操作模式的信息。用户可以根据需要快速执行菜单导航以转换操作模式，便于查看关于转换的操作模式的信息，并且可以使移动电话的整体尺寸最小化。

135. 发明申请

US20070261079A1 Method and video device for accessing information 有权
标题翻译：用于访问信息的方法和视频设备
公开(公告)号：US20070261079A1
公开(公告)日：2007-11-08
申请号：US11819919
申请日：2007-06-29
申请人： Bok Pack , Young Kim , Hyun Ahn , Han Ryu , Yeo Yun , Yun Han
发明人： Bok Pack , Young Kim , Hyun Ahn , Han Ryu , Yeo Yun , Yun Han
IPC分类号： H04N3/00
CPC分类号： H04N21/47815 , H04N5/85 , H04N7/17318 , H04N9/8042 , H04N21/235 , H04N21/23614 , H04N21/4221 , H04N21/42646 , H04N21/4307 , H04N21/4325 , H04N21/434 , H04N21/4345 , H04N21/4348 , H04N21/435 , H04N21/44012 , H04N21/4622 , H04N21/472 , H04N21/4725 , H04N21/64315 , H04N21/64322 , H04N21/658 , H04N21/8113 , H04N21/812 , H04N21/8133 , H04N21/8545 , H04N21/8583 , H04N21/8586
摘要： A method and video device are disclosed for accessing information. In an embodiment of the present invention, part of data included in a title, being played, read from a storage medium or extracted from a broadcast signal is extracted and sent to a server over a network, and information corresponding to the part of the data (i.e., information related to the data and complete data of the data) is received from the server and played. Rather than the part of the data, information related to a position of the data, (e.g. a time point at which the playing of the data starts within the title or a radial position or a physical address at which the data is located in the storage medium) may be sent. The data may be data that forms audio, a frame-shaped video clip or a frame-shaped picture included in the title.
摘要翻译：公开了一种用于访问信息的方法和视频设备。在本发明的一个实施例中，包括在从广播信号中从存储介质读取或从广播信号中提取的标题中包括的部分数据被提取并通过网络发送到服务器，并且与该数据的一部分相对应的信息（即，与数据相关的信息和数据的完整数据）从服务器接收并播放。而不是数据的一部分，与数据的位置相关的信息（例如数据的播放在标题或径向位置中的开始的时间点或数据位于存储器中的物理地址中等）可能被发送。数据可以是形成音频的数据，帧形视频剪辑或包括在标题中的帧形图像。

136. 发明申请

US20070202704A1 Method for etching platinum and method for fabricating capacitor using the same 审中-公开
标题翻译：蚀刻铂的方法和使用其制造电容器的方法
公开(公告)号：US20070202704A1
公开(公告)日：2007-08-30
申请号：US11647644
申请日：2006-12-29
申请人： Su-Bum Shin , Hyun Ahn , Jung-Taik Cheong
发明人： Su-Bum Shin , Hyun Ahn , Jung-Taik Cheong
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/32136 , H01L28/55 , H01L28/65
摘要： A method for etching platinum (Pt) includes etching a platinum layer using a gas mixture including a fluorine (F) containing gas and an inert gas. A method for fabricating a capacitor having a bottom electrode, a dielectric layer, and an upper electrode includes forming the bottom electrode by etching a platinum layer, and forming the upper electrode by etching another platinum layer, wherein the platinum layers are etched using a gas mixture including a fluorine (F) containing gas and an inert gas.
摘要翻译：蚀刻铂（Pt）的方法包括使用含有氟（F）的气体和惰性气体的气体混合物来蚀刻铂层。一种制造具有底部电极，电介质层和上部电极的电容器的方法包括通过蚀刻铂层形成底部电极，并通过蚀刻另外的铂层形成上部电极，其中使用气体蚀刻铂层包含含氟（F）的气体和惰性气体的混合物。

137. 发明申请

US20070181969A1 Semiconductor memory device and method of fabricating the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20070181969A1
公开(公告)日：2007-08-09
申请号：US11704300
申请日：2007-02-09
申请人： Kwang-duk Kim , Jong-hyun Ahn , Jeong-ho Shin
发明人： Kwang-duk Kim , Jong-hyun Ahn , Jeong-ho Shin
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L27/112 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device having an improved fuse structure may include an interlayer insulating film on a semiconductor substrate, an opening in the interlayer insulating film, a vertical fuse that may conform to the opening, a fuse insulating film on the vertical fuse that may fill the opening, and metal wiring lines that may be electrically connected to the vertical fuse.
摘要翻译：具有改进的熔丝结构的半导体存储器件可以包括在半导体衬底上的层间绝缘膜，层间绝缘膜中的开口，可以符合开口的垂直熔丝，垂直保险丝上的熔丝绝缘膜可以填充开口和可以电连接到垂直保险丝的金属布线。

138. 发明授权

US07200067B2 Pad arrangement in semiconductor memory device and method of driving semiconductor device 有权
标题翻译：半导体存储器件中的衬垫布置和半导体器件的驱动方法
公开(公告)号：US07200067B2
公开(公告)日：2007-04-03
申请号：US10895554
申请日：2004-07-21
申请人： Mee-Hyun Ahn , Jung-Bae Lee
发明人： Mee-Hyun Ahn , Jung-Bae Lee
IPC分类号： G11C9/00
CPC分类号： H01L23/50 , G11C5/025 , G11C2207/105 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device comprising control pads and input/output I/O pads capable of reducing the data path for reading and writing data in a cell array, and a method for driving the semiconductor memory device are included. The semiconductor memory device comprises a plurality of memory banks arranged at a cell region of a memory chip, and a plurality of control pads and a plurality of I/O pads, separately arranged from each other at the memory chip, for reading/writing data from/in the memory banks, wherein the plurality of control pads and I/O pads are dispersed at the peripheral region between adjacent memory banks and at the outer portions of the memory banks.
摘要翻译：一种半导体存储器件，包括能够减少用于在单元阵列中读取和写入数据的数据路径的控制焊盘和输入/输出I / O焊盘，以及用于驱动半导体存储器件的方法。半导体存储器件包括布置在存储器芯片的单元区域的多个存储器组，以及多个控制焊盘和多个I / O焊盘，这些控制焊盘和多个I / O焊盘在存储芯片处彼此分开布置，用于读/写数据来自/在存储体中，其中多个控制焊盘和I / O焊盘分散在相邻存储体之间的周边区域和存储体的外部。

139. 发明授权

US07192571B2 Anti calculus and plaque toothpaste composition 失效
标题翻译：抗结石和斑块牙膏组成
公开(公告)号：US07192571B2
公开(公告)日：2007-03-20
申请号：US10450016
申请日：2001-12-06
申请人： Jae-Hyun Ahn , Jin-Hwan Lee , Taek-Kyun Kang , Young-Ho Kim
发明人： Jae-Hyun Ahn , Jin-Hwan Lee , Taek-Kyun Kang , Young-Ho Kim
IPC分类号： A61Q11/00 , A61K8/00
CPC分类号： A61Q11/00 , A61K8/0241 , A61K8/0279 , A61K8/24 , A61K8/25 , A61K8/26
摘要： The present invention relates to a toothpaste composition for preventing calculus formation and removing plaque, more specifically to the toothpaste composition comprising soluble ultra phosphate with network structure and zeolite granule. The composition of the present invention has superior effect to prevent and remove calculus, and removing interdental plaque.
摘要翻译：本发明涉及一种用于防止结石形成和去除斑块的牙膏组合物，更具体地涉及包含具有网状结构的可溶性超磷酸盐和沸石颗粒的牙膏组合物。本发明的组合物具有优异的防止和去除结石的作用，并且除去齿间斑块。

140. 发明授权

US07163719B2 Method of depositing thin film using hafnium compound 有权
标题翻译：使用铪化合物沉积薄膜的方法
公开(公告)号：US07163719B2
公开(公告)日：2007-01-16
申请号：US10712876
申请日：2003-11-12
申请人： Young Hoon Park , Cheol Hyun Ahn , Sang Jin Lee , Byoung Cheol Cho , Sang Kwon Park , Hong Joo Lim , Sang Kyu Lee , Jang Ho Bae
发明人： Young Hoon Park , Cheol Hyun Ahn , Sang Jin Lee , Byoung Cheol Cho , Sang Kwon Park , Hong Joo Lim , Sang Kyu Lee , Jang Ho Bae
IPC分类号： C23C16/40
CPC分类号： C23C16/405 , C23C16/40 , C23C16/45519 , C23C16/45529 , C23C16/45565 , C23C16/45574
摘要： A method of depositing a thin film using a hafnium compound includes depositing a primary thin film and depositing a secondary thin film. The depositing of the primary thin film and the depositing of the secondary thin film are repeated once or more. The depositing of the primary thin film includes feeding a first reactive gas, purging the first reactive gas, feeding a third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a first plurality of (N) times. The feeding of the first reactive gas includes feeding a second reactive gas, purging the second reactive gas, feeding the third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a second plurality of (M) times.
摘要翻译：使用铪化合物沉积薄膜的方法包括沉积初级薄膜和沉积次级薄膜。一次或多次重复初级薄膜的沉积和二次薄膜的沉积。初级薄膜的沉积包括进料第一反应气体，吹扫第一反应气体，进料第三反应气体，吹扫第三反应气体，并重复上述步骤第一次多次（N次）。第一反应气体的供给包括进料第二反应气体，净化第二反应气体，供给第三反应气体，净化第三反应气体，并重复上述步骤第二多次（M）次。

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