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121. 发明申请

US20180114619A1 INDUCTOR 审中-公开
公开(公告)号：US20180114619A1
公开(公告)日：2018-04-26
申请号：US15675286
申请日：2017-08-11
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hun KIM
IPC分类号： H01F5/00 , H01F5/04 , H01F10/06
CPC分类号： H01F5/003 , H01F5/04 , H01F10/06 , H01F17/0013 , H01F27/292 , H01F27/323 , H01F2017/048
摘要： An inductor includes: a body including a coil and a magnetic material, and external electrodes disposed on an outer surface of the body. The coil is supported by a support member, and the support member may also support an insulating wall including an open-hole pattern having a shape corresponding to a pattern of the coil. An insulating ribbon formed so that a length thereof is greater than a width thereof may be additionally disposed on at least a portion of an upper surface of the insulating wall.

122. 发明授权

US06888208B2 Square-law detector based on spin injection and nanowires 失效
公开(公告)号：US06888208B2
公开(公告)日：2005-05-03
申请号：US10631951
申请日：2003-07-30
申请人： Viatcheslav V. Osipov , Alexandre M. Bratkovski
发明人： Viatcheslav V. Osipov , Alexandre M. Bratkovski
IPC分类号： H01F1/00 , H01F10/06 , H01F10/32 , H01L29/66 , H01L29/82
CPC分类号： B82Y25/00 , B82Y10/00 , G11C2213/18 , H01F1/0072 , H01F1/405 , H01F10/06 , H01F10/3254 , H01F10/3268 , H01L29/66984
摘要： Ultrafast square-law detectors amplify electric currents and electromagnetic waves with frequencies on the order of 100 GHz or more. The detectors use injection of spin-polarized electrons from a magnetic film or region into another magnetic film or region through a thin semiconductor control region. A signal current flowing through a conductive nanowire induces a magnetic field causing precession of electron spin injected inside the semiconductor layer and thereby changing the conductivity of the detector. With the magnetizations of the magnetic regions being parallel or antiparallel to each other, the resulting spin injection current includes a term proportional to the square of the signal current so that the detector behaves as a square-law detector. Such square-law detectors are magnetic-semiconductor heterostructures and can operate as a frequency doubler for millimeter electromagnetic waves.

123. 发明申请

US20050023519A1 Square-law detector based on spin injection and nanowires 失效
标题翻译：基于自旋注入和纳米线的平方律检测器
公开(公告)号：US20050023519A1
公开(公告)日：2005-02-03
申请号：US10631951
申请日：2003-07-30
申请人： Viatcheslav Osipov , Alexandre Bratkovski
发明人： Viatcheslav Osipov , Alexandre Bratkovski
IPC分类号： H01F1/00 , H01F10/06 , H01F10/32 , H01L29/66 , H01L29/06 , H01L31/0328
CPC分类号： B82Y25/00 , B82Y10/00 , G11C2213/18 , H01F1/0072 , H01F1/405 , H01F10/06 , H01F10/3254 , H01F10/3268 , H01L29/66984
摘要： Ultrafast square-law detectors amplify electric currents and electromagnetic waves with frequencies on the order of 100 GHz or more. The detectors use injection of spin-polarized electrons from a magnetic film or region into another magnetic film or region through a thin semiconductor control region. A signal current flowing through a conductive nanowire induces a magnetic field causing precession of electron spin injected inside the semiconductor layer and thereby changing the conductivity of the detector. With the magnetizations of the magnetic regions being parallel or antiparallel to each other, the resulting spin injection current includes a term proportional to the square of the signal current so that the detector behaves as a square-law detector. Such square-law detectors are magnetic-semiconductor heterostructures and can operate as a frequency doubler for millimeter electromagnetic waves.
摘要翻译：超快速平方律检测器放大频率在100GHz或更高的频率的电流和电磁波。检测器使用通过薄的半导体控制区将自旋极化电子从磁性膜或区域注入另一个磁性膜或区域。流过导电纳米线的信号电流引起磁场，引起注入到半导体层内部的电子自旋的进动，从而改变检测器的导电性。由于磁性区域的磁化彼此平行或反平行，所得到的自旋注入电流包括与信号电流的平方成比例的项，使得检测器作为平方律检测器。这种平方律检测器是磁半导体异质结构，可以作为毫米波电波的倍频器工作。

124. 发明授权

US4775576A Perpendicular anisotropic magnetic recording 失效
标题翻译：垂直各向异性磁记录
公开(公告)号：US4775576A
公开(公告)日：1988-10-04
申请号：US885089
申请日：1986-07-14
申请人： Jean-Claude Bouchand , Jacques Desserre , Dominque Jeanniot
发明人： Jean-Claude Bouchand , Jacques Desserre , Dominque Jeanniot
IPC分类号： G11B5/716 , G11B5/64 , G11B5/65 , G11B5/66 , H01F10/06 , H01F10/26
CPC分类号： G11B5/66 , Y10S428/90 , Y10T428/24975
摘要： A substrate for perpendicular anisotropic magnetic recording comprises a nonmagnetic substrate (SUBSI) on which a thin metal magnetic medium (CMI) having a negative magnetostrictive effect is deposited. The direction of easy magnetization of the medium is perpendicular to the surface. In order to minimize the magnetostrictive effect in the metal magnetic medium, the medium comprises a stack of alternate thin magnetic and nonmagnetic layers (CI.sub.1 -CI.sub.n, ISO.sub.1 -ISO.sub.n-1), the nonmagnetic layers (ISO.sub.1 -ISO.sub.n-1) being sufficiently flexible so as to dampen the effect of the strains in the magnetic layers and enable strong magnetic coupling between them. The thickness of the nonmagnetic layers is between 150 and 250 angstroms, while the thickness of the magnetic layers is between 700 and 2000 angstroms. The stack may include as many as 10 or more magnetic layers of a chrome/cobalt alloy. The nonmagnetic layers may be SiO, SiO.sub.2 and mixtures thereof. The invention is applicable to magnetic recording disks.
摘要翻译：用于垂直各向异性磁记录的衬底包括沉积有具有负磁致伸缩效应的薄金属磁介质（CMI）的非磁性衬底（SUBSI）。介质容易磁化的方向垂直于表面。为了最小化金属磁介质中的磁致伸缩效应，介质包括交替的薄磁和非磁性层（CI1-CIn，ISO1-ISOn-1）的堆叠，非磁性层（ISO1-ISOn-1）具有足够的柔性以抑制磁性层中的应变的影响，并实现它们之间的强磁耦合。非磁性层的厚度在150和250埃之间，而磁层的厚度在700和2000埃之间。堆叠可以包括多达10个或更多个铬/钴合金的磁性层。非磁性层可以是SiO，SiO 2和它们的混合物。本发明适用于磁记录盘。

125. 发明授权

US4585672A Hydrogen charged thin film conductor 失效
标题翻译：充氢薄膜导体
公开(公告)号：US4585672A
公开(公告)日：1986-04-29
申请号：US706175
申请日：1985-02-27
申请人： James A. Schwarz , Robert W. Pasco
发明人： James A. Schwarz , Robert W. Pasco
IPC分类号： H01F10/06 , H01L23/532 , B05D5/12
CPC分类号： H01F10/06 , H01L23/53223 , H01L2924/0002 , Y10S438/927
摘要： A thin film stripe that includes a conductive metal alloyed with at least one other element capable of chemically bonding with hydrogen and a compound formed by hydrogen chemically bonded with at least one other element in sufficient amounts to increase the stripe's resistance to electromigration failure at normal operating temperatures and pressures.
摘要翻译：一种薄膜条纹，其包括与能够与氢化学键合的至少一种其它元件的导电金属和由与至少一种其它元素以足够量化学键合的氢化合物形成的化合物，以增加条纹在正常操作下对电迁移失败的抵抗力温度和压力。

126. 发明授权

US4544591A Perpendicular magnetic recording medium 失效
标题翻译：垂直磁记录介质
公开(公告)号：US4544591A
公开(公告)日：1985-10-01
申请号：US537512
申请日：1983-09-30
申请人： Yasutaro Uesaka , Sadao Hishiyama , Masahiro Kitada , Noboru Shimizu , Hideo Tanabe , Hideo Fujiwara
发明人： Yasutaro Uesaka , Sadao Hishiyama , Masahiro Kitada , Noboru Shimizu , Hideo Tanabe , Hideo Fujiwara
IPC分类号： G11B5/00 , G11B5/64 , G11B5/66 , G11B5/667 , G11B5/70 , G11B5/738 , H01F10/06 , H01F10/12 , H01F10/13 , H01F10/18 , H01F10/187 , G11B25/04
CPC分类号： G11B5/00 , G11B5/66 , G11B5/70 , Y10S428/90 , Y10T428/24975
摘要： In a perpendicular magnetic recording medium comprising a high permeability film and a perpendicular magnetization film which are laminated on a non-magnetic substrate, a perpendicular magnetic recording medium is provided wherein a permanent magnet film is further sandwiched between the non-magnetic substrate and the high permeability film, thereby eliminating a spike noise.
摘要翻译：在包括层叠在非磁性基板上的高导磁率膜和垂直磁化膜的垂直磁记录介质中，提供垂直磁记录介质，其中将永磁体膜进一步夹在非磁性基板和高磁性基板之间渗透膜，从而消除尖峰噪声。

127. 发明授权

US4525734A Hydrogen charged thin film conductor 失效
标题翻译：充氢薄膜导体
公开(公告)号：US4525734A
公开(公告)日：1985-06-25
申请号：US477503
申请日：1983-03-21
申请人： James A. Schwarz , Robert W. Pasco
发明人： James A. Schwarz , Robert W. Pasco
IPC分类号： H01F10/06 , H01L23/532 , H01L23/36 , H01L23/48
CPC分类号： H01L23/53223 , H01F10/06 , H01L2924/0002
摘要： A thin film conductive stripe having increased resistance to electromigration wherein a conductive element is alloyed with at least one other hydrogen storage element capable of accepting and holding hydrogen internally within the thin film stripe and the stripe is annealed in a hydrogen atmosphere to react hydrogen with the storage material to charge the stripe with hydrogen.
摘要翻译：具有增加的电迁移阻力的薄膜导电条纹，其中导电元件与能够在薄膜条带内部接受和保持氢的至少一个其它储氢元件合金化，并且条带在氢气氛中退火以使氢与储存材料用氢气充填条纹。

128. 发明授权

US4510231A Method for manufacturing a magnetic bubble memory 失效
标题翻译：磁性气泡存储器的制造方法
公开(公告)号：US4510231A
公开(公告)日：1985-04-09
申请号：US462229
申请日：1983-01-31
申请人： Masatoshi Takeshita , Naoki Kodama , Ryo Suzuki , Teruaki Takeuchi , Yutaka Sugita
发明人： Masatoshi Takeshita , Naoki Kodama , Ryo Suzuki , Teruaki Takeuchi , Yutaka Sugita
IPC分类号： G11C11/14 , H01F10/00 , H01F41/34 , B05D5/00 , H01F10/06
CPC分类号： H01F41/34
摘要： A conductor pattern and an ion implanting mask are simultaneously formed by photoetching a conductor film through a single photoresist pattern. An area on which a conductor pattern is to be formed is covered with a photoresist, and ions are implanted to a magnetic film using the conductor film portion not convered with the photoresist, to form a magnetic bubble propagation track. The ion implantation mask and the conductor pattern are formed simultaneously through one mask. Accordingly, reduction of accuracy due to an error in mask alignment is prevented and the manufacturing is facilitated.
摘要翻译：通过单一光致抗蚀剂图案对导体膜进行光刻，同时形成导体图案和离子注入掩模。要形成导体图案的区域被光致抗蚀剂覆盖，并且使用未被光致抗蚀剂覆盖的导体膜部分将离子注入到磁性膜中，以形成磁性气泡传播轨道。离子注入掩模和导体图案通过一个掩模同时形成。因此，防止由于掩模对准的误差而导致的精度降低，并且便于制造。

129. 发明授权

US4453231A Magnetic bubble memory 失效
标题翻译：磁性气泡记忆
公开(公告)号：US4453231A
公开(公告)日：1984-06-05
申请号：US446518
申请日：1982-12-03
申请人： Naoki Kodama , Ryo Suzuki , Masatoshi Takeshita , Yutaka Sugita
发明人： Naoki Kodama , Ryo Suzuki , Masatoshi Takeshita , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08 , H01F10/00 , H01F10/06
CPC分类号： H01F10/06 , G11C19/0816 , G11C19/0883 , G11C19/0891
摘要： A magnetic bubble memory has a first bubble propagation track formed with an ion-implanted pattern and a second bubble propagation track formed with permalloy members connected to each other to form a storage loop. The arrangement is such that a position of an attractive magnetic pole created in one of the permalloy members coincides with a position of an attractive charged wall appearing in the ion-implanted layer at a junction of the first and second bubble propagation tracks when a driving magnetic field is in a particular range of direction.
摘要翻译：磁性气泡存储器具有形成有离子注入图案的第一气泡传播轨道和形成有彼此连接的坡莫合金构件的第二气泡传播轨道，以形成存储环路。该布置使得在一个坡莫合金构件中产生的吸引磁极的位置与在第一和第二气泡传播轨道的接合处出现在离子注入层中的吸引带电壁的位置重合，当驱动磁场在特定的方向范围内。

130. 发明授权

US4390404A Process for manufacture of thin-film magnetic bubble domain detection device 失效
标题翻译：制造薄膜磁泡区域检测装置的方法
公开(公告)号：US4390404A
公开(公告)日：1983-06-28
申请号：US266105
申请日：1981-05-21
申请人： Sotaro Esho , Hiroshi Gokan
发明人： Sotaro Esho , Hiroshi Gokan
IPC分类号： G11C19/08 , H01F10/06 , C23C15/00
CPC分类号： G11C19/0866 , H01F10/06
摘要： A process for manufacturing a thin-film magnetic bubble domain detection device in which first a spacer and then a conductor film are deposited onto a substrate, and then the conductor film is removed from a predetermined region using a mask. Thereafter a magnetic field sensing film is deposited onto the substrate, with the mask still thereon, and then the mask is removed.
摘要翻译：一种制造薄膜磁性气泡区域检测装置的方法，其中首先将间隔物和导体膜沉积到基底上，然后使用掩模从预定区域去除导体膜。此后，将磁场感测膜沉积在衬底上，并将掩模保持在其上，然后去除掩模。

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