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121. 发明授权

US07019371B2 Current-in-plane magnetic sensor including a trilayer structure 失效
标题翻译：电流平面内的磁传感器包括三层结构
公开(公告)号：US07019371B2
公开(公告)日：2006-03-28
申请号：US10764720
申请日：2004-01-26
申请人： Michael Allen Seigler
发明人： Michael Allen Seigler
IPC分类号： H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/33 , H01L43/08
摘要： A current-in-plane magnetic sensor comprises a sensor stack including first and second layers of ferromagnetic material, a first nano-oxide layer positioned adjacent to the first layer of ferromagnetic material, and a layer of non-magnetic material positioned between the first and second layers of ferromagnetic material, wherein the thickness of the non-magnetic layer is selected to provide antiferromagnetic coupling between the first and second ferromagnetic layers, a magnetic field source for biasing the directions of magnetization of the first and second layers of ferromagnetic material in directions approximately 90° with respect to each other, a first lead connected to a first end of the sensor stack, and a second lead connected to a second end of the sensor stack. Disc drives that use the current-in-plane magnetic sensor are also included.
摘要翻译：电流平面磁传感器包括传感器堆叠，其包括铁磁材料的第一和第二层，邻近第一铁磁材料层定位的第一纳米氧化物层和位于第一和第二层之间的非磁性材料层第二层铁磁材料，其中选择非磁性层的厚度以在第一和第二铁磁层之间提供反铁磁耦合;磁场源，其用于在第一和第二铁磁材料层的方向上偏置方向相对于彼此大约90°，连接到传感器堆叠的第一端的第一引线和连接到传感器堆叠的第二端的第二引线。还包括使用当前平面磁传感器的光盘驱动器。

122. 发明申请

US20050190508A1 Canted easy axis in self-pinned layers 有权
标题翻译：自固定层中的易取轴
公开(公告)号：US20050190508A1
公开(公告)日：2005-09-01
申请号：US10788688
申请日：2004-02-26
申请人： Hardayal Gill
发明人： Hardayal Gill
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/1272 , G11B5/33
摘要： A magnetic head having a free layer and an antiparallel (AP) pinned layer structure spaced apart from the free layer, the AP pinned layer structure including at least two AP-pinned layers having magnetic moments that are self-pinned antiparallel to each other, the AP-pinned layers being separated by an AP coupling layer. An easy axis of a first or both of the AP-pinned layers is oriented at an angle of at least 5° from the ABS along a plane of the first AP-pinned layer.
摘要翻译：具有自由层和与所述自由层间隔开的反平行（AP）钉扎层结构的磁头，所述AP钉扎层结构包括至少两个具有彼此反平行自对准的磁矩的AP钉扎层， AP钉扎层由AP耦合层分离。所述AP钉扎层中的第一或两者的容易轴线沿着所述第一AP钉扎层的平面与所述ABS至少5°的角度定向。

123. 发明申请

US20050185333A1 Thin-film magnetic head, method of manufacturing the same, head gimbal assembly, and hard disk drive 有权
标题翻译：薄膜磁头，制造方法，磁头万向架组件和硬盘驱动器
公开(公告)号：US20050185333A1
公开(公告)日：2005-08-25
申请号：US10781827
申请日：2004-02-20
申请人： Yoshitaka Sasaki , Takehiro Kamigama
发明人： Yoshitaka Sasaki , Takehiro Kamigama
IPC分类号： G11B5/31 , G11B5/17 , G11B5/33 , G11B5/48
CPC分类号： G11B5/4826 , G11B5/33
摘要： A thin-film magnetic head comprises first and second magnetic pole groups, magnetically connected to each other, having respective magnetic pole parts opposing each other on a side of a medium-opposing surface; a recording gap layer formed between the magnetic pole parts; and a thin-film coil insulated from the first and second magnetic pole groups and wound helically about at least one of them or flatly spirally wound about a junction connecting the first and second magnetic pole groups to each other; which are laminated on a substrate. The thin-film coil comprises a first conductor group having a plurality of inner conductor parts disposed between the first and second magnetic pole groups, and a second conductor group having a plurality of outer conductor parts disposed outside the second magnetic pole group or junction. The first conductor group has an insulating contact structure in which the inner conductor parts are in contact with each other by way of an insulating film. An inner relaxing part comprising a material softer than at least one of the first, second conductor groups and the first, second magnetic pole groups and being in contact with the first conductor group by way of an insulating film is provided.
摘要翻译：薄膜磁头包括彼此磁连接的第一和第二磁极组，它们在介质相对表面的一侧具有彼此相对的各自的磁极部分; 形成在所述磁极部之间的记录间隙层; 以及薄膜线圈，其与所述第一和第二磁极组绝缘并围绕其中的至少一个螺旋形地缠绕，或者围绕将所述第一和第二磁极组彼此连接的结的平面螺旋形缠绕; 其层压在基板上。薄膜线圈包括具有设置在第一和第二磁极组之间的多个内部导体部分的第一导体组和具有设置在第二磁极组或接合部之外的多个外部导体部分的第二导体组。第一导体组具有绝缘接触结构，其中内导体部分通过绝缘膜彼此接触。提供了一种内部放松部分，其包括比第一，第二导体组和第一，第二磁极组中的至少一个更柔软的材料，并且通过绝缘膜与第一导体组接触。

124. 发明申请

US20050161752A1 Current-in-plane magnetic sensor including a trilayer structure 失效
标题翻译：电流平面内的磁传感器包括三层结构
公开(公告)号：US20050161752A1
公开(公告)日：2005-07-28
申请号：US10764720
申请日：2004-01-26
申请人： Michael Seigler
发明人： Michael Seigler
IPC分类号： G01R33/09 , G11B5/33 , H01L29/82 , H01L43/08 , H01L43/00
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/33 , H01L43/08
摘要： A current-in-plane magnetic sensor comprises a sensor stack including first and second layers of ferromagnetic material, a first nano-oxide layer positioned adjacent to the first layer of ferromagnetic material, and a layer of non-magnetic material positioned between the first and second layers of ferromagnetic material, wherein the thickness of the non-magnetic layer is selected to provide antiferromagnetic coupling between the first and second ferromagnetic layers, a magnetic field source for biasing the directions of magnetization of the first and second layers of ferromagnetic material in directions approximately 90° with respect to each other, a first lead connected to a first end of the sensor stack, and a second lead connected to a second end of the sensor stack. Disc drives that use the current-in-plane magnetic sensor are also included.
摘要翻译：电流平面磁传感器包括传感器堆叠，其包括铁磁材料的第一和第二层，邻近第一铁磁材料层定位的第一纳米氧化物层和位于第一和第二层之间的非磁性材料层第二层铁磁材料，其中选择非磁性层的厚度以在第一和第二铁磁层之间提供反铁磁耦合;磁场源，其用于在第一和第二铁磁材料层的方向上偏置方向相对于彼此大约90°，连接到传感器堆叠的第一端的第一引线和连接到传感器堆叠的第二端的第二引线。还包括使用当前平面磁传感器的光盘驱动器。

125. 发明申请

US20050128652A1 Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
标题翻译：自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性
公开(公告)号：US20050128652A1
公开(公告)日：2005-06-16
申请号：US10732200
申请日：2003-12-10
申请人： James Freitag , Hardayal Gill , Jih-Shiuan Luo , Mustafa Pinarbasi
发明人： James Freitag , Hardayal Gill , Jih-Shiuan Luo , Mustafa Pinarbasi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/33 , G11B5/3932 , G11B2005/3996
摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.
摘要翻译：在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。第一厚度略大于第二厚度。如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

126. 发明申请

US20050094326A1 Integrated spin valve head 失效
公开(公告)号：US20050094326A1
公开(公告)日：2005-05-05
申请号：US11012001
申请日：2004-12-14
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： G01R33/09 , B05D7/00 , G11B5/127 , G11B5/187 , G11B5/29 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/12 , H04R31/00
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

127. 发明授权

US06885527B1 Process to manufacture a top spin valve 失效
标题翻译：制造顶部自旋阀的工艺
公开(公告)号：US06885527B1
公开(公告)日：2005-04-26
申请号：US09696134
申请日：2000-10-26
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： G01R33/09 , B05D7/00 , G11B5/127 , G11B5/187 , G11B5/29 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/12 , H04R31/00
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.
摘要翻译：目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍层。描述本发明的五个实施例。

128. 发明申请

US20050068684A1 Differential spin valve sensor having both pinned and self-pinned structures 失效
标题翻译：差动自旋阀传感器具有固定和自固定结构
公开(公告)号：US20050068684A1
公开(公告)日：2005-03-31
申请号：US10674849
申请日：2003-09-30
申请人： Hardayal Gill
发明人： Hardayal Gill
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/33
摘要： A dual/differential spin valve sensor of a magnetic head includes a first spin valve having an antiparallel (AP) “pinned” layer structure and a second spin valve having an AP “self-pinned” layer structure. The AP pinned layer structure has a magnetization direction which is fixed by an adjacent antiferromagnetic (AFM) layer, whereas the AP self-pinned layer structure has a magnetization direction which is fixed by magnetostriction as well as air bearing surface (ABS) stress. The magnetization direction of the AP pinned layer structure is fixed in a direction antiparallel to the magnetization direction of the AP self-pinned layer structure. The dual/differential spin valve sensor may be configured to have either a top AP pinned layer structure and a bottom AP self-pinned layer structure, or a top AP self-pinned layer structure and a bottom AP pinned layer structure. Advantageously, the dual/differential spin valve sensor is relatively thin and overcomes the difficulties of the AFM polarity setting process when two AP pinned layer structures are utilized.
摘要翻译：磁头的双/微分自旋阀传感器包括具有反平行（AP）“钉扎”层结构的第一自旋阀和具有AP“自固定”层结构的第二自旋阀。 AP钉扎层结构具有由相邻反铁磁（AFM）层固定的磁化方向，而AP自固位层结构具有通过磁致伸缩以及空气轴承表面（ABS）应力固定的磁化方向。 AP钉扎层结构的磁化方向在与AP自固位层结构的磁化方向反平行的方向上固定。双/微分自旋阀传感器可以被配置为具有顶部AP钉扎层结构和底部AP自固定层结构，或顶部AP自固定层结构和底部AP钉扎层结构。有利地，双/微分自旋阀传感器相对较薄，并克服了当使用两个AP钉扎层结构时AFM极性设定过程的困难。

129. 发明申请

US20050041342A1 Magnetoresistive element having reduced spin transfer induced noise 有权
标题翻译：具有降低的自旋转移诱导噪声的磁阻元件
公开(公告)号：US20050041342A1
公开(公告)日：2005-02-24
申请号：US10839064
申请日：2004-05-05
申请人： Yiming Huai , Paul Nguyen
发明人： Yiming Huai , Paul Nguyen
IPC分类号： G01R33/09 , G11B5/127 , G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/127 , G11B5/33
摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a ferromagnetic pinned layer, providing a free layer, and providing a spacer layer between the pinned layer and the free layer. The pinned layer and free layer are ferromagnetic and have a pinned layer magnetization and a free layer magnetization, respectively. The spacer layer is nonmagnetic. In one aspect, the free layer is configured to have an increased magnetic damping constant. In another aspect, the method and system also include providing a second pinned layer and a second spacer layer between the free layer and the second pinned layer. In this aspect, the first pinned layer and/or the second pinned layer are configured such that a forward torque and a reflected torque due to a current driven through the magnetic element in a current-perpendicular-to-plane configuration are substantially equal and opposite.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供铁磁性钉扎层，提供自由层，并在钉扎层和自由层之间提供间隔层。钉扎层和自由层是铁磁性的，并且分别具有钉扎层磁化和自由层磁化。间隔层是非磁性的。在一个方面，自由层被配置为具有增加的磁阻尼常数。在另一方面，该方法和系统还包括在自由层和第二钉扎层之间提供第二钉扎层和第二间隔层。在这方面，第一被钉扎层和/或第二钉扎层被构造成使得正向扭矩和由电流垂直于平面构造驱动通过磁性元件的电流引起的反射转矩基本上相等和相反。

130. 发明申请

US20050018364A1 Hard bias structure with enhanced Hc 失效
标题翻译：具有增强型Hc的硬偏置结构
公开(公告)号：US20050018364A1
公开(公告)日：2005-01-27
申请号：US10614071
申请日：2003-07-02
申请人： Hardayal Gill
发明人： Hardayal Gill
IPC分类号： G11B5/127 , G11B5/33 , G11B15/46
CPC分类号： G11B5/127 , G11B5/33
摘要： A magnetic head having a sensor with a free layer, the free layer having a magnetic moment. Hard bias layers are positioned towards opposite track edges of the sensor, the bias layers stabilizing the magnetic moment of the free layer. An antiparallel (AP) pinned layer structure is positioned toward each of the hard bias layers, each AP pinned layer structure having at least two pinned layers with magnetic moments that are self-pinned antiparallel to each other. Each AP pinned layer structure stabilizes a magnetic moment of the hard bias layer closest to it. An antiferromagnetic layer is positioned toward each of the AP pinned layer structures, each antiferromagnetic layer stabilizing a magnetic moment of pinned layer closest to it.
摘要翻译：具有具有自由层的传感器的磁头，该自由层具有磁矩。硬偏置层被定位在传感器的相对的轨迹边缘处，偏置层稳定了自由层的磁矩。反平行（AP）钉扎层结构朝向每个硬偏置层定位，每个AP钉扎层结构具有至少两个固定层，其中磁矩自相互反平行。每个AP钉扎层结构稳定了最靠近它的硬偏置层的磁矩。朝向每个AP钉扎层结构定位反铁磁层，每个反铁磁层稳定最靠近其的被钉扎层的磁矩。

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