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121. 发明申请

US20160357036A1 Rib-Type Waveguide Silicon Modulators And Optical Devices 有权
标题翻译：肋型波导硅调制器和光器件
公开(公告)号：US20160357036A1
公开(公告)日：2016-12-08
申请号：US15238688
申请日：2016-08-16
申请人： SiFotonics Technologies Co., Ltd.
发明人： Tuo Shi , Tzung-I Su , Yongbo Shao , Dong Pan
IPC分类号： G02F1/025 , G02B6/28
CPC分类号： G02F1/025 , G02B6/2813 , G02F1/2257 , G02F2001/0152 , G02F2001/212 , G02F2201/063 , G02F2203/15
摘要： A ring optical modulator includes a SOI substrate, including at least first and second top silicon layers, and a silicon-based ring resonator formed on the SOI substrate. The silicon-based ring resonator includes first and second top silicon layers, a thin dielectric gate layer disposed between the top silicon layers, first and second electric contacts, and first rib-type waveguide and ring-shape rib-type waveguide formed on the second top silicon layer. The thin dielectric layer includes a first side in contact with the first top silicon layer and a second side in contact with the second top silicon layer. With electric signals applied on the electric contacts, free carriers accumulate, deplete or invert within the top silicon layers on the first and second sides of the thin dielectric gate layer beneath the ring-shape rib-type waveguide, simultaneously, and a refractive index of the ring-shape rib-type waveguide confining optical fields is modulated.
摘要翻译：环形光调制器包括至少包括第一和第二顶硅层的SOI衬底和形成在SOI衬底上的硅基环形谐振器。硅基环形谐振器包括第一和第二顶部硅层，设置在顶部硅层之间的薄介电栅极层，第一和第二电触点以及形成在第二硅层上的第一肋状波导和环形肋型波导顶层硅层。薄介电层包括与第一顶硅层接触的第一侧和与第二顶硅层接触的第二侧。通过施加在电触头上的电信号，自由载流子同时在环状肋型波导下面的薄电介质栅极层的第一和第二侧的顶部硅层内积聚，消耗或反转，折射率环形肋型波导限制光场被调制。

122. 发明授权

US09329415B2 Method for forming an optical modulator 有权
标题翻译：光调制器的形成方法
公开(公告)号：US09329415B2
公开(公告)日：2016-05-03
申请号：US14071820
申请日：2013-11-05
申请人： Agency for Science, Technology and Research
发明人： Jun-Feng Song , Xianshu Luo , Xiaoguang Tu , Patrick Guo-Qiang Lo , Mingbin Yu
IPC分类号： G02F1/025 , G02B6/12 , H01L29/15 , H01P11/00 , H01L21/3215 , H01L21/321 , H01L29/49
CPC分类号： G02F1/025 , G02B2006/12097 , G02B2006/12142 , G02F2201/063 , G02F2202/06 , G02F2202/105
摘要： According to embodiments of the present invention, a method for forming an optical modulator is provided. The method includes providing a substrate, implanting dopants of a first conductivity type into the substrate to form a first doped region, implanting dopants of a second conductivity type into the substrate to form a second doped region, wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, and wherein a remaining portion of the second doped region is located outside of the junction, and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction.
摘要翻译：根据本发明的实施例，提供了一种用于形成光调制器的方法。该方法包括提供衬底，将第一导电类型的掺杂剂注入到衬底中以形成第一掺杂区域，将第二导电类型的掺杂剂注入到衬底中以形成第二掺杂区域，其中第二掺杂区域的一部分是与第一掺杂区域的一部分形成并重叠，以在第一掺杂区域和第二掺杂区域的各个部分之间形成结，并且其中第二掺杂区域的剩余部分位于结点外部，并形成脊波导，其中脊波导与结的至少一部分重叠。

123. 发明授权

US09323079B1 Optical device having electro-optic silicon modulator on large core fin waveguide and method to make the same 有权
标题翻译：在大芯片波导上具有电光硅调制器的光学器件及其制造方法
公开(公告)号：US09323079B1
公开(公告)日：2016-04-26
申请号：US14605802
申请日：2015-01-26
申请人： LaXense Inc.
发明人： Ningning Feng , Xiaochen Sun
IPC分类号： G02F1/035 , G02B6/42 , G02B6/26 , G02B6/10 , G02F1/025 , G02F1/225 , G02B6/122 , G02B6/12 , G02B6/14
CPC分类号： G02F1/025 , G02B6/00 , G02B6/12004 , G02B6/122 , G02B6/1228 , G02B6/14 , G02F1/0356 , G02F1/225 , G02F1/2255 , G02F2201/063 , G02F2202/105
摘要： An optical modulator device made on large core silicon fin waveguide platform and its fabrication methods. The optical device includes two silicon optical coupling waveguides each having a lower ridge and an upper ridge, two mode transformers respectively connecting the coupling waveguides with an optical modulator waveguide. The optical modulator waveguide has a silicon fin waveguide structure with a narrower fin structure on top of a wider lower ridge structure. Each coupling waveguide and the corresponding mode transformer form a two-stage horizontal taper structure, namely a taper in the lower ridge of the coupling waveguide and a taper of the mode transformer. The light travelling in the coupling waveguide with majority of light in the upper ridge can gradually shift to the lower ridge of the optical modulator where an electro-optic region is positioned. The electro-optic region changes its optical property in response to an applied electric field.
摘要翻译：一种大芯片硅鳍波导平台上制作的光调制器及其制作方法。光学器件包括两个硅光耦合波导，每个具有下脊和上脊，两个模式变压器分别将耦合波导与光调制器波导连接。光调制器波导具有在更宽的下脊结构的顶部具有较窄鳍结构的硅鳍波导结构。每个耦合波导和相应的模式变压器形成两级水平锥形结构，即耦合波导的下脊中的锥形和模式变压器的锥度。在耦合波导中行进的光在上脊中的大部分光可以逐渐移动到光学调制器的下部，其中定位有电光区域。电光区域响应于施加的电场而改变其光学特性。

124. 发明授权

US09182543B2 Optical integrated circuits, semiconductor devices including the same, and methods of manufacturing the same 有权
标题翻译：光集成电路，包括其的半导体器件及其制造方法
公开(公告)号：US09182543B2
公开(公告)日：2015-11-10
申请号：US13826471
申请日：2013-03-14
申请人： Samsung Electronics Co., Ltd.
发明人： Seong-Gu Kim , Dong-Jae Shin , Yong-Hwack Shin , Young Choi , Kyoung-Ho Ha
IPC分类号： G02B6/12 , G02F1/225 , G02F1/21
CPC分类号： G02B6/12 , G02B6/12004 , G02F1/2257 , G02F2001/212 , G02F2201/063 , G02F2201/066 , G02F2202/105
摘要： An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material.
摘要翻译：光学集成电路可以包括包括单晶半导体材料的衬底，在衬底的<100>晶体取向中延伸并包括单晶半导体材料的无源元件和以<110>晶体取向延伸的有源元件并且包括单晶半导体材料。

125. 发明授权

US09042003B2 Chip-based frequency comb generator with microwave repetition rate 有权
标题翻译：基于芯片的频率梳发生器，具有微波重复率
公开(公告)号：US09042003B2
公开(公告)日：2015-05-26
申请号：US14513058
申请日：2014-10-13
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： Jiang Li , Hansuek Lee , Tong Chen , Kerry Vahala
IPC分类号： G02F2/02 , G02F1/225 , G02F1/35
CPC分类号： G02F1/353 , G02F1/2257 , G02F2201/063 , G02F2201/17 , G02F2201/58 , G02F2202/09 , G02F2202/105 , G02F2203/15 , G02F2203/54 , G02F2203/56 , G02F2203/69
摘要： A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.
摘要翻译：制造在芯片上的消除不利的回流工艺的频率梳发生器包括具有作为由芯片的二氧化硅层制成的楔形结构的一部分的波导的超高Q盘谐振器。磁盘谐振器允许产生低至2.6GHz和高达220GHz的模式间隔的频率梳。盘式谐振器的表面损耗受限行为使抽水阈值对重复率的强烈依赖性解耦。

126. 发明申请

US20150055910A1 HYBRID MOS OPTICAL MODULATOR 有权
标题翻译：混合MOS光学调制器
公开(公告)号：US20150055910A1
公开(公告)日：2015-02-26
申请号：US14385250
申请日：2012-04-30
申请人： Di Liang
发明人： Di Liang
IPC分类号： G02F1/225 , G02F1/025
CPC分类号： G02F1/2257 , G02B6/125 , G02B6/136 , G02B2006/12061 , G02B2006/12142 , G02B2006/12145 , G02B2006/12159 , G02F1/025 , G02F2001/0153 , G02F2001/212 , G02F2001/213 , G02F2201/063 , G02F2202/102 , G02F2202/105
摘要： A hybrid MOS optical modulator. The optical modulator includes an optical waveguide, a cathode comprising a first material and formed in the optical waveguide, and an anode comprising a second material dissimilar from the first material and formed in the optical waveguide, the anode adjoining the cathode, a capacitor being defined between the anode and the cathode.
摘要翻译：一种混合MOS光调制器。所述光调制器包括光波导，包括第一材料并形成在所述光波导中的阴极，以及阳极，所述阳极包括与所述第一材料不同的并且形成在所述光波导中的第二材料，所述阳极与所述阴极相邻，在阳极和阴极之间。

127. 发明申请

US20150029579A1 CHIP-BASED FREQUENCY COMB GENERATOR WITH MICROWAVE REPETITION RATE 有权
标题翻译：具有微波重复速率的基于芯片的频率发电机
公开(公告)号：US20150029579A1
公开(公告)日：2015-01-29
申请号：US14513058
申请日：2014-10-13
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： Jiang LI , Hansuek LEE , Tong CHEN , Kerry VAHALA
IPC分类号： G02F1/35
CPC分类号： G02F1/353 , G02F1/2257 , G02F2201/063 , G02F2201/17 , G02F2201/58 , G02F2202/09 , G02F2202/105 , G02F2203/15 , G02F2203/54 , G02F2203/56 , G02F2203/69
摘要： A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.
摘要翻译：制造在芯片上的消除不利的回流工艺的频率梳发生器包括具有作为由芯片的二氧化硅层制成的楔形结构的一部分的波导的超高Q盘谐振器。磁盘谐振器允许产生低至2.6GHz和高达220GHz的模式间隔的频率梳。盘式谐振器的表面损耗受限行为使抽水阈值对重复率的强烈依赖性解耦。

128. 发明申请

US20150011040A1 DOUBLE LAYER INTERLEAVED P-N DIODE MODULATOR 有权
标题翻译：双层隔离型P-N二极管调制器
公开(公告)号：US20150011040A1
公开(公告)日：2015-01-08
申请号：US14492410
申请日：2014-09-22
申请人： International Business Machines Corporation
发明人： William M. Green , Jessie C. Rosenberg , Yurii Vlasov
IPC分类号： G02B6/134 , G02B6/12
CPC分类号： G02B6/1347 , G02B6/12 , G02B2006/12061 , G02F1/025 , G02F2201/063 , G02F2201/15 , G02F2202/06 , G02F2202/105
摘要： A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion.
摘要翻译：一种光学调制器的制造方法包括在n型层的一部分上形成n型层，第一氧化物部分和n型层的第二部分上的第二氧化物部分，将第一掩模层图案化第一氧化物部分，n型层的平面表面的部分和第二氧化物部分的部分，在n型层中注入p型掺杂剂以形成第一p型区和第二p型去除所述第一掩蔽层，在所述第一氧化物部分上形成第二掩模层，所述第一p型区域的一部分和所述n型层的一部分，以及在所述第一掩模层的暴露部分中注入p型掺杂剂 n型层，第一p型区域的露出部分以及设置在基板和第二氧化物部分之间的n型层和第二p型区域的区域。

129. 发明授权

US08817354B2 Optical device having reduced optical leakage 有权
标题翻译：具有减少的光泄漏的光学装置
公开(公告)号：US08817354B2
公开(公告)日：2014-08-26
申请号：US13374784
申请日：2012-01-12
申请人： Dazeng Feng , Mehdi Asghari , Cheng-Chih Kung
发明人： Dazeng Feng , Mehdi Asghari , Cheng-Chih Kung
IPC分类号： G02F1/03
CPC分类号： G02F1/025 , G02F2001/0157 , G02F2201/063 , G02F2202/06
摘要： An optical device includes a ridge on a base. The ridge includes an active medium. An active component on the base is a light sensor and/or a light modulator. The active component is configured to guide a light signal through the active medium included in the ridge. Electrical current carriers contact the lateral sides of the ridge on opposing sides of the ridge. Each of the electrical current carriers includes a carrier material that is doped so as to increase the electrical conductivity of the carrier material. The carrier material is different from the active medium.
摘要翻译：光学装置包括在基座上的脊。脊包括活性介质。底座上的有源元件是光传感器和/或光调制器。有源部件被配置为引导光信号通过包括在脊中的活动介质。电流载体与脊的相对侧上的脊的侧面接触。每个电流载体包括掺杂以增加载体材料的导电性的载体材料。载体材料与活性介质不同。

130. 发明授权

US08644647B2 Optical control device 有权
标题翻译：光控装置
公开(公告)号：US08644647B2
公开(公告)日：2014-02-04
申请号：US12225787
申请日：2007-03-30
申请人： Junichiro Ichikawa , Futoshi Yamamoto , Yuhki Kinpara , Katsutoshi Kondou , Satoshi Oikawa
发明人： Junichiro Ichikawa , Futoshi Yamamoto , Yuhki Kinpara , Katsutoshi Kondou , Satoshi Oikawa
IPC分类号： G02F1/035
CPC分类号： G02F1/0356 , G02F1/2255 , G02F2201/063 , G02F2201/066 , G02F2201/121
摘要： It is an object to provide an optical control device capable of realizing speed matching between a microwave and a light wave or impedance matching of microwaves and of reducing a driving voltage. An optical control device including a thin plate 1 (11) which has an electro-optical effect and has a thickness of 10 μm or less, an optical waveguide 2 formed in the thin plate, and control electrodes for controlling light passing through the optical waveguide is characterized in that the control electrodes are configured to include a first electrode and a second electrode disposed to interpose the thin plate therebetween, the first electrode has a coplanar type electrode including at least a signal electrode 4 and a ground electrode 5, and the second electrode has at least a ground electrode 54 (55, 56) and is configured to apply an electric field to the optical waveguide in cooperation with the signal electrode of the first electrode.
摘要翻译：本发明的目的是提供一种能够实现微波和光波之间的速度匹配或微波的阻抗匹配以及降低驱动电压的光学控制装置。一种光学控制装置，包括具有电光效应并且具有10μm或更小的厚度的薄板1（11），形成在薄板中的光波导2和用于控制通过光波导的光的控制电极其特征在于，控制电极被配置为包括第一电极和设置成将薄板夹在其间的第二电极，第一电极具有至少包括信号电极4和接地电极5的共面型电极，第二电极电极至少具有接地电极54（55,56），并且被配置为与第一电极的信号电极协作地向光波导施加电场。

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