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121. 发明申请

US20060004669A1 Apparatus for and method of establishing digital content right, and computer program product 有权
标题翻译：数字内容正确设备及方法，计算机程序产品
公开(公告)号：US20060004669A1
公开(公告)日：2006-01-05
申请号：US11071172
申请日：2005-03-04
申请人： Satoshi Ito
发明人： Satoshi Ito
IPC分类号： G06F17/60
CPC分类号： G06Q30/00 , G06F21/10 , G11B20/00086 , H04N21/2541 , H04N21/4627 , H04N21/835 , H04N21/8355 , H04N2201/3246 , Y10S705/901 , Y10S705/902 , Y10S705/903 , Y10S705/904 , Y10S705/905 , Y10S705/906 , Y10S705/907 , Y10S705/908 , Y10S705/909 , Y10S705/91 , Y10S705/911 , Y10S705/912
摘要： An apparatus for generating copyright information for a secondarily processed content obtained by performing secondary processing on an original content, includes a secondary processed substance acquiring unit, a default license information generating unit, and a license information editing unit. The secondary processed substance acquiring unit acquires operation substances of the secondary processing performed on the original content. The default license information generating unit obtains rights expressions for the operation substances acquired by the secondary processed substance acquiring unit to generate default license information including the rights expressions as an initial value. The license information editing unit accepts selection of a desired rights expression by a user from the rights expressions of the default license information generated by the default license information generating unit to generate license information of the secondary processed content from the selected rights expression.
摘要翻译：一种用于生成通过对原始内容进行二次处理获得的二次处理内容的版权信息的装置，包括二次处理物质获取单元，默认许可信息生成单元和许可信息编辑单元。二次处理物质获取单元获取对原始内容执行的二次处理的操作物质。默认许可信息生成单元获取由二次处理物质获取单元获取的操作物质的权利表达，以生成包括权利表达式的默认许可信息作为初始值。许可证信息编辑单元接受用户从默认许可信息生成单元生成的默认许可信息的权利表达中选择期望的权利表达，以从所选择的权利表达中生成二次处理的内容的许可信息。

122. 发明申请

US20050251529A1 Method and apparatus for accepting and processing an application for conformity of a user dictionary to a standard dictionary 审中-公开
标题翻译：用于接受和处理用户字典符合标准词典的应用程序的方法和装置
公开(公告)号：US20050251529A1
公开(公告)日：2005-11-10
申请号：US11181763
申请日：2005-07-15
申请人： Satoshi Ito
发明人： Satoshi Ito
IPC分类号： G06Q50/10 , G06F17/00 , G06F17/30 , G06F21/10 , G06Q30/04 , G06Q30/06 , G06Q50/00
CPC分类号： G06Q10/087 , G06Q30/0601
摘要： There is disclosed an electronic catalog system in which application data concerning use is received from a user who desires to utilize electronic catalog information using a standard dictionary, internal utilization or opening to the outside of the standard supplier by the user is judged, and for the internal utilization, the standard dictionary and a program for verifying a conformity level are distributed free of charge. If the user desires the opening to the outside including an information providing service, a charged amount is transmitted to the user from charging level data based on the application data, a supplier code is issued after agreement with the user, and the standard dictionary is transmitted together with the program for verifying the desired conformity level.
摘要翻译：公开了一种电子目录系统，其中从使用标准字典的使用电子目录信息的用户接收关于使用的应用数据，判断用户对标准供应商的内部利用或开放状态，并且对于内部利用，标准字典和验证一致性级别的程序免费分发。如果用户期望向外部打开包括信息提供服务，则根据应用数据从收费级数据向用户发送收费金额，在与用户一致之后发出供应商代码，并且发送标准字典以及验证所需符合程度的程序。

123. 发明授权

US06832646B1 Cooler for electronic device 失效
标题翻译：电子设备冷却器
公开(公告)号：US06832646B1
公开(公告)日：2004-12-21
申请号：US09889577
申请日：2001-11-08
申请人： Yasuharu Uomori , Masanori Takahashi , Satoshi Ito
发明人： Yasuharu Uomori , Masanori Takahashi , Satoshi Ito
IPC分类号： H05K720
CPC分类号： H01L23/473 , G06F1/203 , H01L23/467 , H01L2924/0002 , H01L2924/00
摘要： This is a cooler for dissipating heat away from an electronic device (A). The cooler includes a liquid cooling mechanism (B), a forcible air cooling mechanism (C) and a substrate (D). The liquid cooling mechanism includes a set of metal pipes (20-21) connected to a pump (3) with an impeller (16) to transfer cooling liquid to a liquid channel (4). The forcible air cooling mechanism (C) includes a fan (25) discharging air onto a radiating fin (37) located on the set of metal pipes (20-21). The substrates (D) is in fluid communication with the forcible air cooling mechanism (C) and the liquid cooling mechanism (B) and in direct contact with the electronic device (A) so as to remove heat away from the electronic device (A).
摘要翻译：这是一种用于从电子设备（A）散热的冷却器。冷却器包括液体冷却机构（B），强制空气冷却机构（C）和基板（D）。液体冷却机构包括一组连接到具有叶轮（16）的泵（3）的金属管（20-21），以将冷却液转移到液体通道（4）。强制空气冷却机构（C）包括将空气排放到位于所述一组金属管（20-21）上的散热片（37）上的风扇（25）。基板（D）与强制空气冷却机构（C）和液体冷却机构（B）流体连通，并与电子设备（A）直接接触，从而从电子设备（A）移除热量，。

124. 发明授权

US06384434B1 Semiconductor device having multiple types of output cells 有权
标题翻译：具有多种类型的输出单元的半导体器件
公开(公告)号：US06384434B1
公开(公告)日：2002-05-07
申请号：US09599358
申请日：2000-06-21
申请人： Satoshi Ito
发明人： Satoshi Ito
IPC分类号： H01L2710
CPC分类号： H01L27/11807
摘要： A semiconductor device of which input/output cells can be made smaller and consequently of which chip area and hence cost can be reduced in the case where different driving capabilities are required for the output cells. A plurality of transistors is formed in each output cell by forming a plurality of gate electrodes on the semiconductor substrate through a gate-insulating film and by forming a plurality of diffusion regions on both sides of each gate electrode. An endmost impurity-diffusion region is divided into a plurality of divisional diffusion regions in the direction of the gate width, and a plurality of transistors having a gate electrode in common is thereby formed. The gate widths of these transistors, which have a gate electrode in common, are smaller than those of other transistors. Therefore, by using at least one of the transistors having the gate in common, an output driver with low current driving capability can be constituted.
摘要翻译：可以在输出单元的输出/输出单元更小的情况下，在输出单元需要不同的驱动能力的情况下，能够减小芯片面积和成本的半导体器件。通过在半导体衬底上形成多个栅极电极，通过栅极绝缘膜，并在每个栅电极的两侧形成多个扩散区，在每个输出单元中形成多个晶体管。最末端的杂质扩散区域在栅极宽度方向被分成多个分开的扩散区域，从而形成具有共同的栅电极的多个晶体管。具有公共栅电极的这些晶体管的栅极宽度小于其它晶体管的栅极宽度。因此，通过使用具有共同的栅极的至少一个晶体管，可以构成具有低电流驱动能力的输出驱动器。

125. 发明授权

US06333206B1 Process for the production of semiconductor device 有权
公开(公告)号：US06333206B1
公开(公告)日：2001-12-25
申请号：US09297980
申请日：1999-05-12
申请人： Satoshi Ito , Masaki Mizutani , Hiroshi Noro , Shinichiro Sudo , Takashi Fukushima , Makoto Kuwamura
发明人： Satoshi Ito , Masaki Mizutani , Hiroshi Noro , Shinichiro Sudo , Takashi Fukushima , Makoto Kuwamura
IPC分类号： H01L2144
CPC分类号： H01L24/29 , C08L63/00 , H01L21/563 , H01L23/293 , H01L24/75 , H01L24/83 , H01L2224/131 , H01L2224/16225 , H01L2224/29011 , H01L2224/29036 , H01L2224/32225 , H01L2224/45144 , H01L2224/73103 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/75 , H01L2224/75252 , H01L2224/75301 , H01L2224/81193 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , C08L2666/02 , C08L61/04 , C08L2666/08 , H01L2924/00014 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2924/014
摘要： The present invention provides a process for the production of a semiconductor device comprising a semiconductor element provided on a printed circuit board with a plurality of connecting electrode portions provided interposed therebetween, the gap between said printed circuit board and said semiconductor element being sealed with an underfill resin layer. In accordance with the present invention, (1) the underfill resin layer is formed by melting a lamellar solid resin provided interposed between said printed circuit board and said semiconductor element, and (2) the lamellar solid resin provided interposed between said printed circuit board and said semiconductor element is heated for a predetermined period of time until the temperature of the solid resin layer reaches a predetermined range where the two components are connected to each other under pressure under the following conditions (X) and (Y): (X) Supposing that the initial residual heat of reaction of the solid resin before heating is 100% as determined by a differential scanning calorimeter (DSC), the residual heat of reaction thereof is not more than 70% of the initial residual heat of reaction; and (Y) The temperature of the semiconductor element is predetermined higher than that of the printed circuit board, and the difference in temperature between them is not less than 50° C. In this manner, a production process which facilitates the resin sealing of the gap between the semiconductor element and the board and thus can inhibit warpage of the entire semiconductor device and a semiconductor device having an excellent reliability can be provided. In the present invention, the use of a sheet-like underfill material which gives an underfill resin layer having an elastic modulus in tension at 25° C. of from 300 to 15,000 MPa when hardened can provide a semiconductor device which exerts an excellent effect of relaxing the stress on the semiconductor element, printed circuit board and connecting electrode portions and thus exhibits a high reliability.

126. 发明授权

US5895586A Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum 失效
标题翻译：等离子体处理装置和等离子体处理方法，其中使用铝的预氟化材料形成处理室的一部分
公开(公告)号：US5895586A
公开(公告)日：1999-04-20
申请号：US737520
申请日：1996-11-12
申请人： Tetsunori Kaji , Saburo Kanai , Satoshi Ito , Ryoji Hamasaki , Tetsuo Ono , Tatehito Usui , Kazue Takahashi , Kazutami Tago
发明人： Tetsunori Kaji , Saburo Kanai , Satoshi Ito , Ryoji Hamasaki , Tetsuo Ono , Tatehito Usui , Kazue Takahashi , Kazutami Tago
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32467 , H01J37/32477 , Y10S156/914
摘要： There are provided a plasma processing apparatus and a plasma processing method which are suitable for processing a processed substance using a gas plasma containing fluorine atoms.Structural materials used for a high vacuum processing chamber of a plasma processing apparatus are aluminum, aluminum having an anodic oxide coating processed surface and a material having a film of aluminum oxide or a film having aluminum oxide as a main component. A part or the whole of the inner surfaces of the processing chamber is constructed with a pre-fluorinated material.When plasma processing of a processed substance is performed using a gas plasma containing fluorine atoms in the processing chamber having the pre-fluorinated inner surfaces, time-varying processing characteristic can be suppressed.
摘要翻译： PCT No.PCT / JP95 / 00935 Sec。 371日期：1996年11月12日 102（e）日期1996年11月12日PCT提交1995年5月17日PCT公布。出版物WO95 / 31822 日期：1995年11月23日提供了适用于使用含有氟原子的气体等离子体处理物质的等离子体处理装置和等离子体处理方法。用于等离子体处理装置的高真空处理室的结构材料是具有阳极氧化物涂覆处理表面的铝，具有氧化铝膜或具有氧化铝作为主要成分的膜的材料。处理室的内表面的一部分或全部由预氟化材料构成。使用具有预氟化内表面的处理室中含有氟原子的气体等离子体进行处理物质的等离子体处理时，可以抑制时变处理特性。

127. 发明授权

US5874012A Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US5874012A
公开(公告)日：1999-02-23
申请号：US611758
申请日：1996-03-08
申请人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
发明人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
IPC分类号： C30B25/10 , C23F4/00 , C30B25/16 , H01J37/32 , H01L21/302 , H01L21/3065 , B44C1/22 , C23C16/00 , C23F1/02
CPC分类号： H01J37/32504 , H01J37/32522 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H01J2237/022
摘要： A plasma processing apparatus is provided. In the apparatus, an inside surface of a process chamber is prevented from having its quality varied or becoming a heavy metal contamination source by plasma in the chamber, and at the same time the plasma characteristic is stabilized over time. In a plasma processing apparatus including a plasma generating unit, a process chamber capable of having its inside pressure reduced, a gas supply system for supplying a gas to the process chamber, a sample table for holding a sample and a vacuum pumping system, the process chamber has an outer cylinder capable of withstanding depressurization and an inner cylinder arranged inside the outer cylinder and being spaced therefrom through a gap, and a heater and a temperature control are provided in the outer cylinder. A non-magnetic metallic material not containing heavy metals, or ceramic, carbon, silicon or quartz is used for the inner cylinder. The temperature of the inner cylinder is controlled to a desired value by heating the outer cylinder using the heater and the temperature control. By controlling the temperature of the inner cylinder to, for example, 100.degree. C. to 350.degree. C., the surface temperature of the inner cylinder can be maintained at a desired value.
摘要翻译：提供了一种等离子体处理装置。在该装置中，通过室内的等离子体防止了处理室的内表面的质量变化或变成重金属污染源，同时等离子体特性随时间稳定。在包括等离子体发生单元的等离子体处理装置中，能够使其内部压力降低的处理室，用于向处理室供给气体的气体供给系统，用于保持样品的样品台和真空泵送系统，该方法腔室具有能够承受减压的外筒和布置在外筒内部并通过间隙与其间隔开的内筒，并且在外筒中设置加热器和温度控制。内筒使用不含重金属或陶瓷，碳，硅或石英的非磁性金属材料。通过使用加热器和温度控制加热外筒来将内筒的温度控制到期望值。通过将内筒的温度控制在例如100〜350℃，能够将内筒的表面温度保持在期望值。

128. 发明授权

US5872023A Method of fabricating of light emitting device with controlled lattice mismatch 失效
标题翻译：具有受控晶格失配的发光器件的制造方法
公开(公告)号：US5872023A
公开(公告)日：1999-02-16
申请号：US829214
申请日：1997-03-31
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
IPC分类号： H01L33/00 , H01L33/28 , H01S5/32 , H01S5/327 , H01S3/19
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译：半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4）沉积在有源层（4）上的第二导电类型的第二包覆层（6）。第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成作为S，Se，Te。第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

129. 发明授权

US5787414A Data retrieval system using secondary information of primary data to be retrieved as retrieval key 失效
标题翻译：数据检索系统使用主要数据的辅助信息作为检索关键字检索
公开(公告)号：US5787414A
公开(公告)日：1998-07-28
申请号：US720218
申请日：1996-09-26
申请人： Seiji Miike , Satoshi Ito , Hiroshi Mizoguchi , Yoichi Takebayashi , Mika Fukui , Yoshiaki Kurosawa , Akira Morishita , Shigenobu Seto , Hideaki Shinchi , Yasushi Kawakura , Yoshikuni Matsumura , Hisako Tanaka
发明人： Seiji Miike , Satoshi Ito , Hiroshi Mizoguchi , Yoichi Takebayashi , Mika Fukui , Yoshiaki Kurosawa , Akira Morishita , Shigenobu Seto , Hideaki Shinchi , Yasushi Kawakura , Yoshikuni Matsumura , Hisako Tanaka
IPC分类号： G06F17/30
CPC分类号： G06F17/30017 , Y10S707/915 , Y10S707/951 , Y10S707/99932 , Y10S707/99933 , Y10S707/99935
摘要： A data retrieval system capable of carrying out the retrieval using the secondary information of the primary data to be retrieved such as environmental information or structural information as the retrieval key. In the system, the primary data which are filing target to be stored and retrieved are stored in a first memory while secondary information associated with the primary data, which are not directly related with data content of the primary data, are stored in a second memory in correspondence to the primary data stored in the first memory. Then, when a retrieval key specifying a desired retrieval of the primary data from the first memory is entered, the secondary information is selected from the second memory in accordance with the retrieval key, and the primary data corresponding to the secondary information selected in accordance with the retrieval key is retrieved and outputted as a retrieval result.
摘要翻译：一种数据检索系统，其能够使用作为检索关键字的环境信息或结构信息等要检索的主要数据的次要信息进行检索。在系统中，要存储和检索的归档目标的主数据被存储在第一存储器中，而与主数据相关联的与主数据的数据内容不直接相关的辅助信息存储在第二存储器中对应于存储在第一存储器中的主数据。然后，当从第一存储器指定主要数据的期望检索的检索关键字输入时，根据检索关键字从第二存储器中选择辅助信息，并且对应于根据检索关键字选择的辅助信息的主数据作为检索结果检索并输出检索关键字。

130. 发明授权

US5565709A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5565709A
公开(公告)日：1996-10-15
申请号：US551941
申请日：1995-11-02
申请人： Takashi Fukushima , Satoshi Ito , Makoto Kuwamura , Shinya Akizuki , Kazuhiro Ikemura , Shinichiro Sudo
发明人： Takashi Fukushima , Satoshi Ito , Makoto Kuwamura , Shinya Akizuki , Kazuhiro Ikemura , Shinichiro Sudo
IPC分类号： H01L23/31 , H01L23/433 , H01L23/28 , H01L23/29
CPC分类号： H01L23/4334 , H01L23/3107 , H01L23/3128 , H01L2224/451 , H01L2224/48227 , H01L2224/48247 , H01L24/48 , H01L2924/00014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01039 , H01L2924/181
摘要： A semiconductor device comprising a semiconductor element encapsulated with a cured resin having at least two secondary differential peaks of linear thermal expansion by a thermomechanical analytical measurement, the interval between the peaks being at least 20.degree. C. The semiconductor device encapsulated with the cured resin does not cause a warp and is excellent in the TCT test characteristics and the cracking resistance.
摘要翻译：一种半导体器件，包括用固化树脂封装的半导体元件，所述固化树脂通过热机械分析测量具有至少两个线性热膨胀的二次微分峰，峰之间的间隔至少为20℃。用固化树脂封装的半导体器件不引起翘曲，TCT试验特性和耐龟裂性优异。

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