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    • 122. 发明授权
    • Semiconductor thin film, semiconductor device and manufacturing method thereof
    • 半导体薄膜,半导体器件及其制造方法
    • US07372073B2
    • 2008-05-13
    • US11458412
    • 2006-07-19
    • Shunpei YamazakiJun KoyamaAkiharu MiyanagaTakeshi Fukunaga
    • Shunpei YamazakiJun KoyamaAkiharu MiyanagaTakeshi Fukunaga
    • H01L29/04
    • H01L27/12G02F1/13454H01L21/02532H01L21/02672H01L27/10805H01L27/10873H01L27/11H01L27/1108H01L27/1203H01L27/1277H01L27/1281H01L27/1296H01L29/04H01L29/66757
    • A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the substrate surface without including crystal boundaries therein, allowing the active layer to consist of the mono-domain region only. The insulating film underlying the active layer has a specific surface configuration of an intended pattern in profile, including projections or recesses. To fabricate the active layer, form a silicon oxide film by sputtering on the substrate. Pattern the silicon oxide film providing the surface configuration. Form an amorphous silicon film by low pressure CVD on the silicon oxide film. Retain in the silicon oxide film and/or the amorphous silicon film certain metallic element for acceleration of silicon film to a crystalline silicon film. Then, perform a second heat treatment in the halogen atmosphere forming on the crystalline silicon film a thermal oxide film containing halogen, whereby the crystalline silicon film alters to a mono-domain region.
    • 半导体器件包括其表面上具有绝缘膜的衬底和在衬底表面上由半导体薄膜制成的交流有源层。 薄膜包含由多个柱状和/或针状晶体形成的单畴区域,其平行于衬底表面而不包括其中的晶界,使活性层仅由单畴区组成。 活性层下面的绝缘膜具有预期图案的特定表面构型,包括凸起或凹槽。 为了制造有源层,通过在衬底上溅射形成氧化硅膜。 形成提供表面构造的氧化硅膜。 通过低压CVD在氧化硅膜上形成非晶硅膜。 保留在氧化硅膜和/或非晶硅膜中的某些金属元素,用于将硅膜加速至晶体硅膜。 然后,在形成在结晶硅膜上的卤素气氛中进行第二次热处理,含有卤素的热氧化膜,由此晶体硅膜改变为单畴区域。