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121. 发明授权

US08324000B2 Method of fabricating light extractor 有权
标题翻译：光提取器的制作方法
公开(公告)号：US08324000B2
公开(公告)日：2012-12-04
申请号：US13000604
申请日：2009-06-03
申请人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
发明人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
IPC分类号： H01L21/00
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2933/0091
摘要： Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.
摘要翻译：公开了提取光的方法。制造用于从衬底提取光的光学结构的方法包括以下步骤：（a）提供具有表面的衬底; （b）在所述基板的表面上设置多个结构，其中所述多个结构形成暴露所述基板的表面的敞开区域; （c）收缩至少一些结构物; 和（d）施加外涂层以覆盖开放区域中的收缩结构和基底表面。

122. 发明授权

US07645478B2 Methods of making displays 失效
标题翻译：制作显示方法
公开(公告)号：US07645478B2
公开(公告)日：2010-01-12
申请号：US11094928
申请日：2005-03-31
申请人： Steven D. Thelss , Paul F. Baude , Michael A. Haase , Eric W. Hemmesch , Yaoqi J. Liu , Sergey S. Lamansky
发明人： Steven D. Thelss , Paul F. Baude , Michael A. Haase , Eric W. Hemmesch , Yaoqi J. Liu , Sergey S. Lamansky
IPC分类号： B05D5/06 , H01J9/02
CPC分类号： H01L51/0013 , H01L27/3244 , H01L29/7869 , H01L2251/5315 , Y10S428/917
摘要： Methods of forming displays are described. The displays have zinc oxide row and column drivers integrated onto the same display substrate as zinc oxide pixel transistors and organic light emitting diodes. The organic light emitting diodes are prepared, at least in part, using a thermal transfer process from a donor sheet.
摘要翻译：描述形成显示器的方法。显示器与氧化锌列和列驱动器集成在与氧化锌像素晶体管和有机发光二极管相同的显示基板上。有机发光二极管至少部分地使用来自供体薄片的热转印工艺制备。

123. 发明授权

US07541610B2 LED device with re-emitting semiconductor construction and converging optical element 有权
标题翻译：具有发光半导体结构和会聚光学元件的LED器件
公开(公告)号：US07541610B2
公开(公告)日：2009-06-02
申请号：US11761067
申请日：2007-06-11
申请人： Michael A. Haase
发明人： Michael A. Haase
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/18 , H01L33/00 , H01L29/20 , H01L29/201 , H01L29/22 , H01L29/227 , H01L29/24
CPC分类号： H01L33/58 , G02B19/0028 , G02B19/0061 , G02B19/0071 , G02B19/0095 , H01L33/08 , H01L33/502 , H01L2924/0002 , H01L2924/00
摘要： A light source is provided including an LED component having an emitting surface, which may include: i) an LED capable of emitting light at a first wavelength; and ii) a re-emitting semiconductor construction which includes a second potential well not located within a pn junction having an emitting surface; or which may alternately include a first potential well located within a pn junction and a second potential well not located within a pn junction; and which additionally includes a converging optical element.
摘要翻译：提供了一种光源，其包括具有发射表面的LED部件，其可以包括：i）能够发射第一波长的光的LED; 以及ii）再发射半导体结构，其包括不位于具有发射表面的pn结内的第二势阱; 或者其可以可选地包括位于pn结内的第一势阱和不位于pn结内的第二势阱; 并且还包括会聚光学元件。

124. 发明授权

US07352213B2 Ac powered logic circuitry 失效
标题翻译：交流供电逻辑电路
公开(公告)号：US07352213B2
公开(公告)日：2008-04-01
申请号：US11421075
申请日：2006-05-31
申请人： Paul F. Baude , Michael A. Haase
发明人： Paul F. Baude , Michael A. Haase
IPC分类号： H03K19/20 , G06K7/10
CPC分类号： G06K19/0701 , G06K19/0723 , H03K3/0315 , H03K19/094
摘要： The use of an alternating current (ac) source to power logic circuitry can support satisfactory device performance for a variety of applications, while enhancing long-term stability of the circuitry. For example, when organic thin film transistor (OTFT)-based logic circuitry is powered by an ac power source, the logic circuitry exhibits stable performance characteristics over an extended period of operation. Enhanced stability may permit the use of OTFT logic circuitry to form a variety of circuit devices, including inverters, oscillators, logic gates, registers and the like. Such circuit devices may find application in a variety of applications, including integrated circuits, printed circuit boards, flat panel displays, smart cards, cell phones, and RFID tags. In some applications, the ac-powered logic circuitry may eliminate the need for ac-dc rectification components, thereby reducing the manufacturing time, expense, cost, complexity, and size of the component carrying the circuitry.
摘要翻译：使用交流（ac）源来为逻辑电路供电可以支持各种应用的令人满意的器件性能，同时提高电路的长期稳定性。例如，当基于有机薄膜晶体管（OTFT）的逻辑电路由交流电源供电时，逻辑电路在延长的操作周期内表现出稳定的性能特性。增强的稳定性可以允许使用OTFT逻辑电路来形成各种电路装置，包括反相器，振荡器，逻辑门，寄存器等。这种电路装置可以应用于各种应用，包括集成电路，印刷电路板，平板显示器，智能卡，蜂窝电话和RFID标签。在一些应用中，交流供电的逻辑电路可以消除对交流 - 直流整流部件的需要，从而减少承载电路的部件的制造时间，成本，成本，复杂性和尺寸。

125. 发明授权

US07223515B1 Thermal mass transfer substrate films, donor elements, and methods of making and using same 有权
标题翻译：热质传递底物薄膜，供体元素，以及制造和使用它们的方法
公开(公告)号：US07223515B1
公开(公告)日：2007-05-29
申请号：US11420894
申请日：2006-05-30
申请人： Martin B. Wolk , Thomas R. Hoffend, Jr. , Stephen A. Johnson , John P. Baetzold , Richard J. Thompson , Terence D. Neavin , Michael A. Haase , Sergey A. Lamansky
发明人： Martin B. Wolk , Thomas R. Hoffend, Jr. , Stephen A. Johnson , John P. Baetzold , Richard J. Thompson , Terence D. Neavin , Michael A. Haase , Sergey A. Lamansky
IPC分类号： G03F7/11 , G03F7/34
CPC分类号： B41M5/465 , Y10S428/913 , Y10S430/165 , Y10T428/31
摘要： Substrate films, thermal mass transfer donor elements, and methods of making and using the same are provided. In some embodiments, such substrate films and donor elements include at least two dyads, wherein each dyad includes an absorbing first layer and an essentially non-absorbing second layer. Also provided are methods of making a donor element that includes an essentially non-absorbing substrate, an absorbing first layer, and a non-absorbing second layer, wherein the composition of the essentially non-absorbing substrate is essentially the same as the composition of the essentially non-absorbing second layer.
摘要翻译：提供了底物膜，热质量转移供体元件及其制造和使用方法。在一些实施例中，这种基底膜和施主元件包括至少两个二元组，其中每个二元包括吸收第一层和基本上不吸收的第二层。还提供了制造施主元件的方法，其包括基本上不吸收的基底，吸收第一层和非吸收性第二层，其中基本上不吸收的基底的组成基本上与基本上不吸收第二层。

126. 发明授权

US07193291B2 Organic Schottky diode 有权
标题翻译：有机肖特基二极管
公开(公告)号：US07193291B2
公开(公告)日：2007-03-20
申请号：US10809135
申请日：2004-03-25
申请人： Tzu-Chen Lee , Michael A. Haase , Paul F. Baude
发明人： Tzu-Chen Lee , Michael A. Haase , Paul F. Baude
IPC分类号： H01L27/095 , H01L29/47
CPC分类号： H01L51/105 , H01L51/002 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0059 , H01L51/0078 , H01L51/0081 , H01L51/0579 , H01L51/0583
摘要： An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other side of the polycrystalline organic semiconductor layer, and it acts as a buffer between the semiconductor layer and an ohmic contact layer.
摘要翻译：有机肖特基二极管包括在层的一侧具有整流接触的多晶有机半导体层。非晶掺杂半导体层被放置在多晶有机半导体层的另一侧上，并且其作为半导体层和欧姆接触层之间的缓冲区。

127. 发明授权

US5574296A Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer 失效
标题翻译：在具有p型ZnSe层的分子束外延电磁辐射传感器中掺杂IIB-VIA半导体
公开(公告)号：US5574296A
公开(公告)日：1996-11-12
申请号：US95872
申请日：1993-07-21
申请人： Robert M. Park , James M. DePuydt , Hwa Cheng , Michael A. Haase
发明人： Robert M. Park , James M. DePuydt , Hwa Cheng , Michael A. Haase
IPC分类号： C30B23/02 , H01L21/363 , H01L33/00 , H01L33/28 , H01S5/00 , H01S5/042 , H01S5/30 , H01L29/22 , H01L31/0328 , H01L31/00
CPC分类号： H01L33/285 , C30B23/02 , C30B29/48 , H01L21/02395 , H01L21/02477 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L33/0087 , H01S5/0421 , H01S5/3059 , Y10S438/925
摘要： An electromagnetic radiation transducer is provided having a p-type ZnSe layer and an n-type layer. The p-type ZnSe layer has a net donor to net acceptor ratio (N.sub.D /N.sub.A) of less than or equal to about 0.8. The net acceptor concentration is greater than about 5.times.10.sup.15 cm .sup.-3 and the resistivity is less than 15 .OMEGA.-cm. The p-type ZnSe layer is deposited by doping the ZnSe during fabrication with a neutral free-radical source.
摘要翻译：提供具有p型ZnSe层和n型层的电磁辐射换能器。 p型ZnSe层具有小于或等于约0.8的净供体与净受体比（ND / NA）。净受体浓度大于约5×10 15 cm -3，电阻率小于15欧姆 - 厘米。通过在制造过程中掺杂ZnSe并用中性自由基源沉积p型ZnSe层。

128. 发明授权

US5396103A Graded composition ohmic contact for P-type II-VI semiconductors 失效
标题翻译： P型II-VI半导体的分级组成欧姆接触
公开(公告)号：US5396103A
公开(公告)日：1995-03-07
申请号：US17126
申请日：1993-02-12
申请人： Jun Oiu , James M. DePuydt , Hwa Cheng , Michael A. Haase
发明人： Jun Oiu , James M. DePuydt , Hwa Cheng , Michael A. Haase
IPC分类号： H01L21/28 , H01L29/43 , H01L29/45 , H01L33/00 , H01L33/14 , H01L33/28 , H01L33/38 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/327 , H01S5/34 , H01S5/347 , H01L21/44
CPC分类号： H01L33/40 , B82Y20/00 , H01L29/45 , H01L33/0087 , H01L33/28 , H01L33/285 , H01L33/38 , H01S5/0421 , H01S5/347 , H01L2933/0016 , H01L33/145 , H01S5/2211 , H01S5/2231 , H01S5/3059 , H01S5/3068 , H01S5/327 , H01S5/3403
摘要： A II-VI laser diode including a substrate, a device layer of p-type II-VI semiconductor, an electrode and an ohmic contact layer between the electrode and device layer. The ohmic contact layer comprises a graded composition semiconductor compound including ZnTe. The relative amount of ZnTe in the semiconductor compound increases with increasing distance of the ohmic contact layer from the device layer. In a first embodiment the ohmic contact layer comprises a graded composition semiconductor alloy including the semiconductor compound of the device layer and ZnTe. The amount of ZnTe in the alloy increases with increasing distance of the ohmic contact layer from the device layer in the first embodiment. In a second embodiment the ohmic contact layer includes layers of ZnTe spaced between layers of the semiconductor compound of the device layer. The thickness of the layers of ZnTe increase, or the thickness of the layers of the semiconductor compound of the device layer decrease, with increasing distance of the ohmic contact layer from the device layer in the second embodiment.
摘要翻译：包括基板，p型II-VI半导体的器件层，电极和器件层之间的电极和欧姆接触层的II-VI激光二极管。欧姆接触层包括包含ZnTe的梯度组成半导体化合物。半导体化合物中的ZnTe的相对量随着欧姆接触层与器件层的距离的增加而增加。在第一实施例中，欧姆接触层包括包括器件层的半导体化合物和ZnTe的渐变组成半导体合金。在第一实施例中，合金中的ZnTe的量随着欧姆接触层与器件层的距离的增加而增加。在第二实施例中，欧姆接触层包括在器件层的半导体化合物的层间隔开的ZnTe层。随着第二实施例中欧姆接触层与器件层的距离增加，ZnTe层的厚度增加，或者器件层的半导体化合物的层的厚度减小。

129. 发明授权

US5165105A Separate confinement electroabsorption modulator utilizing the Franz-Keldysh effect 失效
标题翻译：使用Franz-Keldysh效应的单独的约束电吸收调制器
公开(公告)号：US5165105A
公开(公告)日：1992-11-17
申请号：US739870
申请日：1991-08-02
申请人： Michael A. Haase , David K. Misemer
发明人： Michael A. Haase , David K. Misemer
IPC分类号： G02F1/015 , G02F1/025
CPC分类号： G02F1/025 , G02F2001/0155 , G02F2001/0157
摘要： A semiconductor heterojunction, guided-wave, electroabsorption modulator. The device includes a rib waveguide fabricated on a substrate. The waveguide includes a relatively thin and off-center undoped electroabsorbing layer within a light-guiding region. Electrodes configured for interconnection to an external voltage source produce an electric field within the waveguide. Heavily doped field confining layers on opposite sides of the electroabsorbing layer confine the electric field within the electroabsorbing layer to cause the electroabsorption of radiation in accordance with the Franz-Keldysh effect.
摘要翻译：半导体异质结，导波，电吸收调制器。该器件包括在衬底上制造的肋波导。波导包括在导光区域内的相对薄且偏心的未掺杂的电吸收层。配置为与外部电压源互连的电极在波导内产生电场。在电吸收层的相对侧上的重掺杂场约束层将电场吸收层内的电场限制为根据Franz-Keldysh效应引起的电吸收辐射。

130. 发明授权

US4262213A Universal power module 失效
标题翻译：通用电源模块
公开(公告)号：US4262213A
公开(公告)日：1981-04-14
申请号：US79034
申请日：1979-09-26
申请人： Charles W. Eichelberger , Michael A. Haase
发明人： Charles W. Eichelberger , Michael A. Haase
IPC分类号： H02M5/257 , H03K17/62 , H03K13/24 , H02J13/00
CPC分类号： H02M5/2576 , H03K17/6285 , Y10T307/477
摘要： A universal power supplying module for controlling the application of power to a plurality of loads is disclosed. The universal power module receives a Pulse-Width Modulated (PWM) data signal which includes a plurality of PWM pulses. Each of the PWM pulses is associated with a respective one of the loads and has a width which is indicative of whether or not power is to be applied to its associated load. The universal power module stores binary information in accordance with the pulse width of the PWM pulses and controls the application of power to the loads as a function of the stored information.
摘要翻译：公开了一种用于控制向多个负载施加功率的通用供电模块。通用功率模块接收包括多个PWM脉冲的脉冲宽度调制（PWM）数据信号。每个PWM脉冲与相应的一个负载相关联，并且具有指示是否向其相关负载施加功率的宽度。通用功率模块根据PWM脉冲的脉冲宽度存储二进制信息，并根据存储的信息控制对负载的功率的施加。

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