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121. 发明申请

US20070009199A1 Optical device 失效
标题翻译：光学装置
公开(公告)号：US20070009199A1
公开(公告)日：2007-01-11
申请号：US11455934
申请日：2006-06-20
申请人： Takafumi Yokino , Katsumi Shibayama
发明人： Takafumi Yokino , Katsumi Shibayama
IPC分类号： G02B6/12
CPC分类号： G02B6/29352 , G02B6/12007 , G02B6/4246
摘要： An optical device 1 has a photodetecting element 6, an optical waveguide layer 4 containing core portions 4a to 4c extending in directions crossing a layer thickness direction and a clad portion 4h covering the core portions 4a to 4c, and an optical waveguide substrate 2 having the end face 4g of the core portion 4c optically coupled to the photodetecting element 6 on the side surface 2a thereof. The optical waveguide substrate 2 has substrates 3 and 5 disposed so that the principal surfaces 3a and 5a face each other. The optical waveguide layer 4 is provided between the substrate 3 and the substrate 5. The photodetecting element 6 is mounted on the mount area 2c on the side surface 2a of the optical waveguide substrate 2. The mount area 2c is set to contain the end face 4g of the core portion 4c, a part of the side surface 3b of the substrate 73 and a part of the side surface 5b of the substrate 5. Accordingly, in the optical device, the optical coupling efficiency between a semiconductor optical element such as a light emission element and a photodetecting element and an optical waveguide can be enhanced.
摘要翻译：光学元件1具有光检测元件6，包含沿着层厚方向的方向延伸的芯部4 a〜4 c的光波导层4和覆盖芯部4a〜4c的覆盖部4h，波导基片2具有在其侧表面2a上光耦合到光电探测元件6的芯部分4c的端面4g。光波导基板2具有基板3和5，这些基板3和5被设置成主表面3a和5a彼此面对。光波导层4设置在基板3和基板5之间。光检测元件6安装在光波导基板2的侧面2a上的安装区域2c上。安装区域2c被设置为包含芯部分4c的端面4g，基板73的侧表面3b的一部分和基板5的侧表面5b的一部分。因此，在光学装置中，可以提高诸如发光元件的半导体光学元件与光电检测元件之间的光耦合效率和光波导。

122. 发明授权

US07148464B2 Photodiode array with a plurality of depressions 失效
标题翻译：具有多个凹陷的光电二极管阵列
公开(公告)号：US07148464B2
公开(公告)日：2006-12-12
申请号：US10637040
申请日：2003-08-08
申请人： Katsumi Shibayama
发明人： Katsumi Shibayama
IPC分类号： H01L31/00
CPC分类号： H01L31/103 , H01L27/1446 , H01L27/14634 , H01L27/1464 , H01L27/14643 , H01L31/02363 , H01L2224/11 , Y02E10/50
摘要： In a photodiode array 1, incident-side depressions 7 formed by thinning from the incident surface side of light to be detected are arranged in an array, whereas opposite-side depressions 11 formed by thinning regions corresponding to regions formed with the incident-side depressions 7 from the side opposite from the incident surface are arranged in an array. The bottom of the opposite-side depressions 11 is formed with a pn junction 3, whereby photodiodes of pn junction type are arranged in an array.
摘要翻译：在光电二极管阵列1中，通过从被检测光的入射面侧减薄而形成的入射侧凹部7排列成阵列，而相反侧的凹部11由对应于形成有入射侧凹部的区域 7从与入射面相反的一侧排列成阵列。相对侧凹部11的底部形成有pn结3，由此pn结型的光电二极管排列成阵列。

123. 发明授权

US06853046B2 Photodiode array and method of making the same 有权
标题翻译：光电二极管阵列及其制作方法
公开(公告)号：US06853046B2
公开(公告)日：2005-02-08
申请号：US10668605
申请日：2003-09-24
申请人： Katsumi Shibayama
发明人： Katsumi Shibayama
IPC分类号： G01J1/24 , H01L27/146 , H01L31/00
CPC分类号： H01L27/14643 , H01L27/14634 , H01L27/14636 , H01L27/14687
摘要： A photodiode array comprises a semiconductor substrate formed with an array of a plurality of pn junction type photodiodes on a light incident surface side, the surface opposite from the incident surface in the semiconductor substrate being made of a (100) plane; a through hole, formed in an area held between the photodiodes, penetrating through the semiconductor substrate from the incident surface side to the opposite surface side; and a conductive layer extending from the incident surface to the opposite surface by way of a wall surface of the through hole; the through hole being formed by connecting a vertical hole part formed substantially perpendicular to the incident surface on the incident surface side, and a pyramidal hole part formed like a quadrangular pyramid on the opposite surface side to each other within the semiconductor substrate; the pyramidal hole part having a wall surface formed as a (111) plane.
摘要翻译：光电二极管阵列包括在光入射表面侧上形成有多个pn结型光电二极管的阵列的半导体衬底，与半导体衬底中的入射表面相反的表面由（100）面制成; 形成在从所述入射面侧穿过所述半导体基板到所述相对面侧的所述光电二极管之间的区域中的通孔; 以及通过所述通孔的壁表面从所述入射表面延伸到所述相对表面的导电层; 所述通孔是通过连接形成在所述入射面侧的大致垂直于所述入射面的垂直孔部而形成的，以及在所述半导体衬底内的相反侧面上形成为四角锥的金字塔形孔部; 金字塔形孔部具有形成为（111）面的壁面。

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