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121. 发明申请

US20090291516A1 Peeling Method and Method of Manufacturing Semiconductor Device 有权
标题翻译：剥离方法和制造半导体器件的方法
公开(公告)号：US20090291516A1
公开(公告)日：2009-11-26
申请号：US12477966
申请日：2009-06-04
申请人： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
IPC分类号： H01L21/50
CPC分类号： H01L27/1266 , B32B7/06 , B32B43/006 , B32B2310/0843 , B32B2457/08 , B32B2457/14 , G02F1/1368 , G02F2001/13613 , H01L21/3221 , H01L21/76251 , H01L27/1214 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L29/6675 , H01L29/66757 , H01L29/78663 , H01L51/003 , H01L51/0097 , H01L51/5237 , H01L51/5246 , H01L51/529 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , Y10S438/977 , Y10T156/1137 , Y10T156/1939
摘要： There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
摘要翻译：提供了能够防止对被剥离层的损伤的剥离方法。因此，不仅可以以高产率在整个表面上剥离具有小面积的被剥离层，而且可以在整个表面上剥离具有大面积的待剥离层。在剥离之前进行用于部分降低第一材料层（11）和第二材料层（12）之间的接触性能（激光照射，压力施加等）的处理，然后通过物理手段进行剥离。因此，能够容易地在第二材料层（12）的内部或其界面进行分离。

122. 发明授权

US07446339B2 Display device having a curved surface 有权
标题翻译：具有曲面的显示装置
公开(公告)号：US07446339B2
公开(公告)日：2008-11-04
申请号：US11422980
申请日：2006-06-08
申请人： Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
发明人： Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
IPC分类号： H01L29/06
CPC分类号： H01L27/1218 , G02F1/133305 , G02F1/1339 , G02F1/13394 , G02F1/1341 , G02F1/1368 , H01L21/2007 , H01L21/67092 , H01L21/6835 , H01L21/76251 , H01L27/1214 , H01L27/124 , H01L27/1259 , H01L27/1262 , H01L27/1266 , H01L27/156 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L29/66757 , H01L29/78603 , H01L51/0024 , H01L51/003 , H01L51/0097 , H01L51/56 , H01L2221/6835 , H01L2221/68363 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , H01L2924/30105 , H01L2924/3025 , Y02E10/549
摘要： The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object original having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
摘要翻译：本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件具有以曲率结合到基底材料上的剥离层。特别地，本发明的目的是提供一种用于制造具有曲率的显示器的方法，更具体地说，提供一种发光器件，该发光器件具有键合到具有曲率的基底材料的OLED。对原来具有曲率和弹性的支撑件施加外力，并且将支撑件结合到形成在基板上的剥离层。然后，当基板被剥离时，支撑件通过恢复力返回到原始形状，并且剥离层也沿着支撑件的形状弯曲。最后，将具有曲率的转印体原件粘合到剥离层，然后完成具有所需曲率的装置。

123. 发明授权

US07361573B2 Method of peeling off and method of manufacturing semiconductor device 有权
标题翻译：剥离方法及制造半导体装置的方法
公开(公告)号：US07361573B2
公开(公告)日：2008-04-22
申请号：US11199084
申请日：2005-08-09
申请人： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214
摘要： The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer 11 is formed on a substrate and a second material layer 12 is formed adjacently to the foregoing first material layer 11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer 12.
摘要翻译：本发明的目的是提供一种剥离方法，而不会损坏剥离层，并且不仅可以分离具有小表面积的剥离层，而且可以分离具有大表面积的剥离层的整个表面。此外，本发明的目的是通过将剥离层粘贴到各种基板上提供轻量的半导体器件及其制造方法。特别地，本发明的目的是通过将诸如TFT的各种元件粘贴到柔性膜上来提供轻量的半导体器件及其制造方法。即使在第一材料层11形成在基板上并且第二材料层12形成在与上述第一材料层11相邻的情况下，此外，层压膜形成，500℃以上的加热处理或激光束进行辐射处理，如果第一材料层在剥离之前具有拉伸应力，并且第二材料层具有压缩应力，则可以通过物理手段容易地在第二材料层12的中间层或界面中进行优异的分离。

124. 发明授权

US07045438B2 Light emitting device, semiconductor device, and method of fabricating the devices 有权
公开(公告)号：US07045438B2
公开(公告)日：2006-05-16
申请号：US10199496
申请日：2002-07-22
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Mayumi Mizukami
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Mayumi Mizukami
IPC分类号： H01L21/30
CPC分类号： H01L51/529 , G02F1/133305 , G02F2001/13613 , H01L21/3143 , H01L21/31616 , H01L21/318 , H01L27/3244 , H01L27/3295 , H01L51/0004 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368
摘要： A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.

125. 发明申请

US20050282357A1 Method of peeling off and method of manufacturing semiconductor device 有权
标题翻译：剥离方法及制造半导体装置的方法
公开(公告)号：US20050282357A1
公开(公告)日：2005-12-22
申请号：US11199084
申请日：2005-08-09
申请人： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L21/762 , H01L21/77 , H01L21/84 , H01L27/12 , G03C3/00 , H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214
摘要： The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer 11 is formed on a substrate and a second material layer 12 is formed adjacently to the foregoing first material layer 11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer 12.
摘要翻译：本发明的目的是提供一种剥离方法，而不会损坏剥离层，并且不仅可以分离具有小表面积的剥离层，而且可以分离具有大表面积的剥离层的整个表面。此外，本发明的目的是通过将剥离层粘贴到各种基板上提供轻量的半导体器件及其制造方法。特别地，本发明的目的是通过将诸如TFT的各种元件粘贴到柔性膜上来提供轻量的半导体器件及其制造方法。即使在第一材料层11形成在基板上并且第二材料层12形成在与上述第一材料层11相邻的情况下，此外，层压膜形成，500℃以上的加热处理或激光束进行辐射处理，如果第一材料层在剥离之前具有拉伸应力，并且第二材料层具有压缩应力，则可以通过物理手段容易地在第二材料层12的中间层或界面中进行优异的分离。

126. 发明申请

US20050001547A1 Light-emitting device, electronic equipment, and method of manufacturing thereof 有权
标题翻译：发光装置，电子设备及其制造方法
公开(公告)号：US20050001547A1
公开(公告)日：2005-01-06
申请号：US10896436
申请日：2004-07-22
申请人： Shunpei Yamazaki , Junya Maruyama , Keiichi Ogura , Toru Takayama
发明人： Shunpei Yamazaki , Junya Maruyama , Keiichi Ogura , Toru Takayama
IPC分类号： H01L27/32 , H01L51/52 , H01J1/62 , H01J63/04
CPC分类号： H01L51/5259 , H01L27/3244 , H01L51/524 , H01L51/5253
摘要： A highly reliable light-emitting device is provided in which an organic light-emitting device is not degraded by oxygen, moisture, and the like. The organic light-emitting device is press-fit in vacuum using a wrapping film (105) that is covered with a DLC film (or a silicon nitride film, an AlN film, a film of a compound expressed as AlNXOY) (106) containing Ar. The organic light-emitting device thus can be completely shut off from the outside, and moisture, oxygen, or other external substances that accelerate degradation of an organic light emitting layer can be prevented from entering the organic light-emitting device.
摘要翻译：提供了一种高度可靠的发光器件，其中有机发光器件不被氧气，水分等降解。使用被DLC膜（或氮化硅膜，AlN膜，AlNXOY化合物的膜）（106）覆盖的包裹膜（105）在有机发光装置中进行真空压配合（106） Ar。因此，可以将有机发光装置从外部完全切断，并且可以防止促进有机发光层劣化的水分，氧气或其它外部物质进入有机发光装置。

127. 发明授权

US08415208B2 Semiconductor device and peeling off method and method of manufacturing semiconductor device 有权
公开(公告)号：US08415208B2
公开(公告)日：2013-04-09
申请号：US10193912
申请日：2002-07-15
申请人： Toru Takayama , Junya Maruyama , Mayumi Mizukami , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Mayumi Mizukami , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L21/76 , H01L21/30
CPC分类号： H01L27/1266 , G02F1/1339 , G02F1/1341 , G02F1/1362 , G02F2001/13613 , H01L21/2007 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1248 , H01L27/3262 , H01L29/24 , H01L29/7869 , H01L33/44 , H01L2227/326 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

128. 发明授权

US08367440B2 Semiconductor device and peeling off method and method of manufacturing semiconductor device 有权
公开(公告)号：US08367440B2
公开(公告)日：2013-02-05
申请号：US12432906
申请日：2009-04-30
申请人： Toru Takayama , Junya Maruyama , Mayumi Mizukami , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Mayumi Mizukami , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , G02F1/1339 , G02F1/1341 , G02F1/1362 , G02F2001/13613 , H01L21/2007 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1248 , H01L27/3262 , H01L29/24 , H01L29/7869 , H01L33/44 , H01L2227/326 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

129. 发明授权

US08338198B2 Method of peeling thin film device and method of manufacturing semiconductor device using peeled thin film device 有权
标题翻译：剥离薄膜器件的方法和使用剥离的薄膜器件制造半导体器件的方法
公开(公告)号：US08338198B2
公开(公告)日：2012-12-25
申请号：US12477966
申请日：2009-06-04
申请人： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
IPC分类号： H01L21/50
CPC分类号： H01L27/1266 , B32B7/06 , B32B43/006 , B32B2310/0843 , B32B2457/08 , B32B2457/14 , G02F1/1368 , G02F2001/13613 , H01L21/3221 , H01L21/76251 , H01L27/1214 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L29/6675 , H01L29/66757 , H01L29/78663 , H01L51/003 , H01L51/0097 , H01L51/5237 , H01L51/5246 , H01L51/529 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , Y10S438/977 , Y10T156/1137 , Y10T156/1939
摘要： There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
摘要翻译：提供了能够防止对被剥离层的损伤的剥离方法。因此，不仅可以以高产率在整个表面上剥离具有小面积的被剥离层，而且可以在整个表面上剥离具有大面积的待剥离层。在剥离之前进行用于部分降低第一材料层（11）和第二材料层（12）之间的接触性能（激光照射，压力施加等）的处理，然后通过物理手段进行剥离。因此，能够容易地在第二材料层（12）的内部或其界面进行分离。

130. 发明申请

US20060216909A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE BY TRANSFERRING A LAYER TO A SUPPORT WITH CURVATURE 有权
标题翻译：通过将层转移到具有曲线的支持来制造半导体器件的方法
公开(公告)号：US20060216909A1
公开(公告)日：2006-09-28
申请号：US11422980
申请日：2006-06-08
申请人： Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
发明人： Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1218 , G02F1/133305 , G02F1/1339 , G02F1/13394 , G02F1/1341 , G02F1/1368 , H01L21/2007 , H01L21/67092 , H01L21/6835 , H01L21/76251 , H01L27/1214 , H01L27/124 , H01L27/1259 , H01L27/1262 , H01L27/1266 , H01L27/156 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L29/66757 , H01L29/78603 , H01L51/0024 , H01L51/003 , H01L51/0097 , H01L51/56 , H01L2221/6835 , H01L2221/68363 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , H01L2924/30105 , H01L2924/3025 , Y02E10/549
摘要： The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object original having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
摘要翻译：本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件具有以曲率结合到基底材料上的剥离层。特别地，本发明的目的是提供一种用于制造具有曲率的显示器的方法，更具体地说，提供一种发光器件，该发光器件具有键合到具有曲率的基底材料的OLED。对原来具有曲率和弹性的支撑件施加外力，并且将支撑件结合到形成在基板上的剥离层。然后，当基板被剥离时，支撑件通过恢复力返回到原始形状，并且剥离层也沿着支撑件的形状弯曲。最后，将具有曲率的转印体原件粘合到剥离层，然后完成具有所需曲率的装置。

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