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    • 123. 发明授权
    • Method of producing semiconductor device
    • 半导体器件的制造方法
    • US4597824A
    • 1986-07-01
    • US670010
    • 1984-11-09
    • Kazuyoshi ShinadaMasaki Sato
    • Kazuyoshi ShinadaMasaki Sato
    • H01L21/033H01L21/225H01L21/336H01L29/10H01L29/78H01L21/306B44C1/22C03C15/00C03C25/06
    • H01L29/6659H01L21/0337H01L21/2255H01L29/1083H01L29/78H01L29/7836
    • A method of producing a MOS transistor of LDD structure with p(n) type pockets. A doped oxide film in which impurities such as phosphorus and impurities such as arsenic are doped is formed on a semiconductor substrate, and a nitride film is formed in regions where p type pockets are formed on the both sides of a gate electrode. By implementing heat treatment in the atmosphere of oxygen, the portion below the nitride film is placed in the condition where it is equivalent when heat treated in the atmosphere of nitrogen whereby a p type impurity region and an n.sup.- type impurity region are formed. The region except for that below the nitride film is heat treated in the atmosphere of oxygen to form an n.sup.+ type impurity region. Further, with the gate electrode as a mask, n.sup.- type impurity region and p type impurity region are formed, thereafter selectively growing a film on the side walls of the gate electrode to form an n.sup.+ type impurity region with the gate electrode and the film as masks, thus producing a MOS transistor.
    • 一种制造具有p(n)型袋的LDD结构的MOS晶体管的方法。 在半导体衬底上形成掺杂有杂质如砷的杂质如砷的掺杂氧化物膜,并且在栅电极的两侧形成有p型穴的区域中形成氮化物膜。 通过在氧气氛下进行热处理,将氮化膜下方的部分置于在氮气气氛中进行热处理时相当的状态,由此形成p型杂质区域和n型杂质区域。 除了氮化物膜下方的区域在氧气氛中进行热处理以形成n +型杂质区域。 此外,以栅电极为掩模,形成n型杂质区和p型杂质区,然后在栅电极的侧壁上选择性地生长膜以与栅电极和膜形成n +型杂质区 作为掩模,从而产生MOS晶体管。