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121. 发明授权

US06900128B2 Activation of oxides for electroless plating 有权
公开(公告)号：US06900128B2
公开(公告)日：2005-05-31
申请号：US10929853
申请日：2004-08-30
申请人： Nishant Sinha
发明人： Nishant Sinha
IPC分类号： H01L21/02 , H01L21/105 , H01L21/288 , H01L21/3105 , H01L21/3213 , H01L21/768 , H01L21/8242 , H01L27/01 , H01L27/108 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/105 , H01L21/288 , H01L21/3105 , H01L21/32134 , H01L21/76844 , H01L21/76865 , H01L21/76874 , H01L27/10852 , H01L27/10897 , H01L28/65
摘要： The present invention provides approaches for electroless deposition of conductive materials onto the surface of oxide-based materials, including nonconductive metal oxides, in a manner that does not require intervening conductive pastes, nucleation layers, or additional seed or activation layers formed over the surface of the oxide-based layer. According to one embodiment of the present invention, a layer of a titanium-based material is formed over an oxide-based surface. The layer of titanium-based material is subsequently removed from the surface of the oxide-based layer in a manner such that the surface of the oxide-based layer is activated for electroless deposition. A metal or metal alloy is then plated over the oxide-based surface using electroless plating techniques.

122. 发明申请

US20050023687A1 Activation of oxides for electroless plating 有权
公开(公告)号：US20050023687A1
公开(公告)日：2005-02-03
申请号：US10929853
申请日：2004-08-30
申请人： Nishant Sinha
发明人： Nishant Sinha
IPC分类号： H01L21/02 , H01L21/105 , H01L21/288 , H01L21/3105 , H01L21/3213 , H01L21/768 , H01L21/8242 , H01L27/01 , H01L27/108 , B32B15/04 , H01L21/4763 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/105 , H01L21/288 , H01L21/3105 , H01L21/32134 , H01L21/76844 , H01L21/76865 , H01L21/76874 , H01L27/10852 , H01L27/10897 , H01L28/65
摘要： The present invention provides approaches for electroless deposition of conductive materials onto the surface of oxide-based materials, including nonconductive metal oxides, in a manner that does not require intervening conductive pastes, nucleation layers, or additional seed or activation layers formed over the surface of the oxide-based layer. According to one embodiment of the present invention, a layer of a titanium-based material is formed over an oxide-based surface. The layer of titanium-based material is subsequently removed from the surface of the oxide-based layer in a manner such that the surface of the oxide-based layer is activated for electroless deposition. A metal or metal alloy is then plated over the oxide-based surface using electroless plating techniques.

123. 发明授权

US10119825B1 System and method for geocoding positional accuracy 有权
公开(公告)号：US10119825B1
公开(公告)日：2018-11-06
申请号：US15690325
申请日：2017-08-30
申请人： Nishant Sinha , Jeffrey Reuger , Ossama Essa , Neena Priyanka , Berkley R Charlton
发明人： Nishant Sinha , Jeffrey Reuger , Ossama Essa , Neena Priyanka , Berkley R Charlton
IPC分类号： G01C21/32 , G06F17/30
摘要： An automated computer geocoding system and method is described having a plurality of geographic datasets stored in a computer memory. The geographic datasets include at least one point level dataset, street level dataset, and geographic level dataset. As output, geocoded data is provided with positional accuracy indicators. In a first step, an address to be geocoded is received by the system. The system determines whether corresponding geocode data exists in one or more of the geographic datasets. A geographic dataset is selected that provides a highest level of resolution and that also includes corresponding geocode data for the address. A geocoded coordinate for the address is output, as found in the geographic dataset that was selected. An offset value for the geocoded coordinate is calculated and output with the coordinates. The offset value is determined as a function of geographic characteristics of the geographic dataset that was selected.

124. 发明授权

US08608857B2 Rheological fluids for particle removal 有权
标题翻译：用于颗粒去除的流变液
公开(公告)号：US08608857B2
公开(公告)日：2013-12-17
申请号：US13616282
申请日：2012-09-14
申请人： Nishant Sinha
发明人： Nishant Sinha
IPC分类号： B08B3/10
CPC分类号： H01L21/67057 , B08B3/04 , B08B7/00 , H01L21/67086 , Y10T137/206 , Y10T428/24521
摘要： Methods and apparatus for cleaning a substrate (e.g., wafer) in the fabrication of semiconductor devices utilizing electrorheological (ER) and magnetorheological (MR) fluids to remove contaminant residual particles from a surface of the substrate are provided.
摘要翻译：提供了利用电流变学（ER）和磁流变（MR）流体制造半导体器件中的衬底（例如晶片）以从衬底的表面去除污染物残留颗粒的方法和装置。

125. 发明授权

US08603318B2 Method of selectively removing conductive material 有权
标题翻译：选择性去除导电材料的方法
公开(公告)号：US08603318B2
公开(公告)日：2013-12-10
申请号：US13098572
申请日：2011-05-02
申请人： Rita J. Klein , Dale W. Collins , Paul Morgan , Joseph N. Greeley , Nishant Sinha
发明人： Rita J. Klein , Dale W. Collins , Paul Morgan , Joseph N. Greeley , Nishant Sinha
IPC分类号： C25F3/16
CPC分类号： H01L21/67086 , B82Y30/00 , C23F1/02 , C23F1/10 , H01B1/122 , H01L21/32115 , H01L21/67075
摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with a surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to a dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.
摘要翻译：提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。将包含比被除去的导电金属更高的纳米颗粒的电解质溶液施加到基底上以相对于介电材料选择性地去除导电金属，而不施加外部电位或处理垫与基底的表面的接触。解决方案和方法可以应用于例如相对于电介质材料选择性去除导电金属层（例如，阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连）而不施加外部电位或接触具有衬底表面的处理衬垫。

126. 发明授权

US08561029B2 Precise thread-modular summarization of concurrent programs 有权
标题翻译：并行程序的精确线程模块化汇总
公开(公告)号：US08561029B2
公开(公告)日：2013-10-15
申请号：US12894710
申请日：2010-09-30
申请人： Nishant Sinha , Chao Wang
发明人： Nishant Sinha , Chao Wang
IPC分类号： G06F9/44 , G06F11/00
CPC分类号： G06F11/3604
摘要： Methods and systems for concurrent program verification. A concurrent program is summarized into a symbolic interference skeleton (IS) using data flow analysis. Sequential consistency constraints are enforced on read and write events in the IS. Error conditions are checked together with the IS using a processor.
摘要翻译：并发程序验证的方法和系统。使用数据流分析将并发程序总结为符号干扰骨架（IS）。在IS中的读写事件上执行顺序一致性约束。使用处理器与IS一起检查错误状况。

127. 发明申请

US20130084699A1 Selective Metal Deposition Over Dielectric Layers 有权
标题翻译：电介质层上的选择性金属沉积
公开(公告)号：US20130084699A1
公开(公告)日：2013-04-04
申请号：US13686107
申请日：2012-11-27
申请人： Paul A. Morgan , Nishant Sinha
发明人： Paul A. Morgan , Nishant Sinha
IPC分类号： H01L21/283
CPC分类号： H01L21/283 , H01L21/76802 , H01L21/76834 , H01L21/76879
摘要： Selective deposition of metal over dielectric layers in a manner that minimizes of eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured as allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over substrate layer.
摘要翻译：提供金属在电介质层上的选择性沉积，以最小化消除键孔形成的方式。根据一个实施例，介电目标层形成在衬底层上，其中目标层可以被配置为允许保形金属沉积，并且在目标层上形成电介质第二层，其中第二层可被配置为允许自下而上的金属沉积。然后可以在第二层中形成开口，并且可以在衬底层上选择性地沉积金属。

128. 发明授权

US08338297B2 Selective metal deposition over dielectric layers 有权
标题翻译：介电层上的选择性金属沉积
公开(公告)号：US08338297B2
公开(公告)日：2012-12-25
申请号：US13466349
申请日：2012-05-08
申请人： Paul A Morgan , Nishant Sinha
发明人： Paul A Morgan , Nishant Sinha
IPC分类号： H01L21/44
CPC分类号： H01L21/283 , H01L21/76802 , H01L21/76834 , H01L21/76879
摘要： Selective deposition of metal over dielectric layers in a manner that minimizes of eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured as allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over substrate layer.
摘要翻译：提供金属在电介质层上的选择性沉积，以最小化消除键孔形成的方式。根据一个实施例，介电目标层形成在衬底层上，其中目标层可以被配置为允许保形金属沉积，并且在目标层上形成电介质第二层，其中第二层可被配置为允许自下而上的金属沉积。然后可以在第二层中形成开口，并且可以在衬底层上选择性地沉积金属。

129. 发明申请

US20120298158A1 MICROELECTRONIC SUBSTRATE CLEANING SYSTEMS WITH POLYELECTROLYTE AND ASSOCIATED METHODS 审中-公开
标题翻译：具有聚电解质和相关方法的微电子基板清洗系统
公开(公告)号：US20120298158A1
公开(公告)日：2012-11-29
申请号：US13570033
申请日：2012-08-08
申请人： Joseph N. Greeley , Nishant Sinha , Lukasz Hupka , Timothy A. Quick , Prashant Raghu
发明人： Joseph N. Greeley , Nishant Sinha , Lukasz Hupka , Timothy A. Quick , Prashant Raghu
IPC分类号： B08B3/12 , C11D7/60 , C11D3/60 , B08B3/08
CPC分类号： B08B3/08 , C11D3/37 , C11D7/06 , C11D11/0047 , H01L21/02057 , H01L21/67051 , H01L21/67057
摘要： Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte.
摘要翻译：本文公开了使用聚电解质的清洁系统和用于清洁微电子衬底的各种相关方法的几个实施例。一个实施例涉及一种具有用于保持微电子基板的基板支撑件的系统，位于基板支撑件上方并面向微电子基板的表面的分配器，经由导管与分配器流体连通的储存器和洗涤液储存在容器中。洗涤液包括聚电解质。

130. 发明申请

US20120261627A1 Compositions of Matter, and Methods of Removing Silicon Dioxide 有权
标题翻译：物质组成和去除二氧化硅的方法
公开(公告)号：US20120261627A1
公开(公告)日：2012-10-18
申请号：US13531241
申请日：2012-06-22
申请人： Nishant Sinha
发明人： Nishant Sinha
IPC分类号： H01B1/08 , B44C1/22
CPC分类号： H01L21/3081 , H01L21/31111
摘要： Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX3 and PQ3, where X and Q are halides. Some embodiments include methods of selectively etching undoped silicon dioxide relative to doped silicon dioxide, in which thallium is incorporated into the doped silicon dioxide prior to the etching. Some embodiments include compositions of matter containing silicon dioxide doped with thallium to a concentration of from about 1 weight % to about 10 weight %.
摘要翻译：一些实施方案包括去除其中二氧化硅暴露于包括活性氢和至少一种伯，仲，叔或季铵卤化物的混合物的二氧化硅的方法。混合物还可以包括铊，BX 3和PQ 3中的一种或多种，其中X和Q是卤化物。一些实施方案包括相对于掺杂二氧化硅选择性地蚀刻未掺杂二氧化硅的方法，其中在蚀刻之前将铊掺入掺杂的二氧化硅中。一些实施方案包括含有掺杂铊的二氧化硅至约1重量％至约10重量％的浓度的物质的组合物。

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