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121. 发明授权

US07749798B2 Optimized photodiode process for improved transfer gate leakage 有权
标题翻译：优化光电二极管工艺，改善传输门漏电
公开(公告)号：US07749798B2
公开(公告)日：2010-07-06
申请号：US11094363
申请日：2005-03-31
申请人： Howard E. Rhodes , Richard A. Mauritzson , Inna Patrick
发明人： Howard E. Rhodes , Richard A. Mauritzson , Inna Patrick
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L27/14601 , H01L31/03529 , H01L31/103 , Y02E10/50
摘要： An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant, wherein at least one of the implants are angled so as to allow the resulting photodiode to extend out beneath an adjoining gate. Under an alternate embodiment, a fourth implant is added, under an increased implant angle, in the region of the second implant. The resulting photodiode structure substantially reduces or eliminates transfer gate subthreshold leakage.
摘要翻译：公开了一种图像感测电路和方法，其中通过一系列成角度的植入物在基板中形成光电二极管。光电二极管由第一，第二和第三植入物形成，其中植入物中的至少一个是成角度的，以便使得到的光电二极管延伸出邻近的栅极之下。在替代实施例中，在第二植入物的区域内以增加的植入角度添加第四植入物。所得到的光电二极管结构基本上减少或消除传输门极阈值泄漏。

122. 发明申请

US20100165134A1 Arrayed Imaging Systems And Associated Methods 有权
标题翻译：阵列成像系统及相关方法
公开(公告)号：US20100165134A1
公开(公告)日：2010-07-01
申请号：US12297608
申请日：2007-04-17
申请人： Edward R. Dowski, JR. , Paulo E.X. Silveira , George C. Barnes, IV , Vladislav V. Chumachenko , Dennis W. Dobbs , Regis S. Fan , Gregory E. Johnson , Mondrag Scepanovic , Satoru Tachihara , Christopher J. Linnen , Inga Tamayo , Donald Combs , Howard E. Rhodes , James He , John J. Mader , Goran M. Rauker , Kenneth Kubala , Mark Meloni , Brian Schwartz , Robert Commack , Michael Hepp , Kenneth Ashley Macon , Gary L. Duerksen
发明人： Edward R. Dowski, JR. , Paulo E.X. Silveira , George C. Barnes, IV , Vladislav V. Chumachenko , Dennis W. Dobbs , Regis S. Fan , Gregory E. Johnson , Mondrag Scepanovic , Satoru Tachihara , Christopher J. Linnen , Inga Tamayo , Donald Combs , Howard E. Rhodes , James He , John J. Mader , Goran M. Rauker , Kenneth Kubala , Mark Meloni , Brian Schwartz , Robert Commack , Michael Hepp , Kenneth Ashley Macon , Gary L. Duerksen
IPC分类号： H04N5/225 , H01L31/18 , H01L27/146
CPC分类号： G06F17/504 , B24B13/06 , B24B49/00 , G02B3/0025 , G02B3/0031 , G02B3/0068 , G02B3/0075 , G02B7/022 , G02B13/0025 , G02B13/006 , G02B13/0085 , G02B27/0025 , G06F17/5081 , G06F2217/06 , G06F2217/12 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L2924/0002 , H04N5/2257 , H01L2924/00
摘要： Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors.
摘要翻译：阵列成像系统包括形成有公共基底和分层光学元件的第一阵列的检测器阵列，每个分层光学元件与检测器阵列中的检测器光学连接。

123. 发明授权

US07692705B2 Active pixel sensor with a diagonal active area 失效
标题翻译：有源像素传感器具有对角线活动区域
公开(公告)号：US07692705B2
公开(公告)日：2010-04-06
申请号：US10661494
申请日：2003-09-15
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/376
摘要： An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the column lines of a traditional imager allowing the fabrication of a smaller imager. The imaging device also may be fabricated to have a diagonal active area to facilitate contact of two adjacent pixels with the single column line and allow linear row select lines, reset lines and column lines.
摘要翻译：一种成像装置，其形成为具有连接到公共列线的行中的两个相邻像素的CMOS半导体集成电路。通过使行的相邻像素共享列线，CMOS成像器电路消除了允许制造较小成像器的传统成像器的一半列线。成像装置还可以被制造成具有对角线有源区域以促进两个相邻像素与单列线的接触，并允许线性行选择线，复位线和列线。

124. 发明授权

US07675094B2 Image sensor pixel having a transfer gate formed from P+ or N+ doped polysilicon 有权
标题翻译：具有由P +或N +掺杂多晶硅形成的传输门的图像传感器像素
公开(公告)号：US07675094B2
公开(公告)日：2010-03-09
申请号：US11021134
申请日：2004-12-22
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L27/148
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14612 , H01L27/14643
摘要： An active pixel using a transfer gate that has a polysilicon gate doped with P+ is disclosed. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The transfer gate is doped with a p-type dopant.
摘要翻译：公开了使用掺杂有P +的多晶硅栅极的传输栅极的有源像素。像素包括形成在半导体衬底中的感光元件和形成在半导体衬底中的n型浮动节点。在浮动节点和感光元件之间形成具有传输门的n沟道传输晶体管。传输栅极掺杂有p型掺杂剂。

125. 发明申请

US20090298272A1 SINGLE POLY CMOS IMAGER 有权
标题翻译：单色CMOS图像
公开(公告)号：US20090298272A1
公开(公告)日：2009-12-03
申请号：US12492765
申请日：2009-06-26
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L21/3205
CPC分类号： H01L27/14643 , H01L27/14689
摘要： More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.
摘要翻译：通过减小每个像素单元中的栅极之间的间隙和/或通过在每个像素单元中的相邻栅极之间提供轻掺杂区域，特别是至少在电荷之间，在CMOS或CCD成像器中实现更完整的电荷转移收集门和下游的门到电荷收集门。为了减小栅极之间的间隙，在导电层上为每个栅极形成在其侧壁上具有间隔物的绝缘体盖。然后使用绝缘体盖和间隔物作为硬掩模，从导电层蚀刻栅极，使得栅极能够形成得比先前可能的显着更靠近在一起，这又增加了电荷转移效率。通过在相邻栅极之间提供轻掺杂区域，从电荷收集栅极实现更完整的电荷转移。

126. 发明申请

US20090294811A1 IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER 有权
标题翻译：具有背面钝化和金属层的图像传感器
公开(公告)号：US20090294811A1
公开(公告)日：2009-12-03
申请号：US12129599
申请日：2008-05-29
申请人： Howard E. Rhodes , Hidetoshi Nozaki
发明人： Howard E. Rhodes , Hidetoshi Nozaki
IPC分类号： H01L31/112
CPC分类号： H01L27/14629 , H01L27/14609 , H01L27/14621 , H01L31/02327
摘要： An image sensor includes a semiconductor layer that low-pass filters light of different wavelengths. For example, the semiconductor layer proportionately absorbs photons of shorter wavelengths and proportionately passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed on a front surface of the semiconductor layer, where the photodiode is an N− region formed within the P-type region of the semiconductor layer. A P+ layer is formed between the N− region of the photodiode and a back surface of the semiconductor layer. A mirror that primarily reflects photons of red and/or infra-red wavelengths is formed on the back surface of the semiconductor layer.
摘要翻译：图像传感器包括低通滤波不同波长的光的半导体层。例如，半导体层成比例地吸收较短波长的光子并且成比例地传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。具有光电二极管的成像像素形成在半导体层的前表面上，其中光电二极管是形成在半导体层的P型区域内的N-区域。在光电二极管的N区和半导体层的背面之间形成P +层。在半导体层的后表面上形成主要反射红色和/或红外波长的光子的反射镜。

127. 发明授权

US07616245B2 Active pixel sensor with a diagonal active area 失效
标题翻译：有源像素传感器具有对角线活动区域
公开(公告)号：US07616245B2
公开(公告)日：2009-11-10
申请号：US11797756
申请日：2007-05-07
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/376
摘要： An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the column lines of a traditional imager allowing the fabrication of a smaller imager. The imaging device also may be fabricated to have a diagonal active area to facilitate contact of two adjacent pixels with the single column line and allow linear row select lines, reset lines and column lines.
摘要翻译：一种成像装置，其形成为具有连接到公共列线的行中的两个相邻像素的CMOS半导体集成电路。通过使行的相邻像素共享列线，CMOS成像器电路消除了允许制造较小成像器的传统成像器的一半列线。成像装置还可以被制造成具有对角线有源区域以促进两个相邻像素与单列线的接触，并允许线性行选择线，复位线和列线。

128. 发明申请

US20090194671A1 IMAGE SENSOR REFLECTOR 有权
标题翻译：图像传感器反射器
公开(公告)号：US20090194671A1
公开(公告)日：2009-08-06
申请号：US12023797
申请日：2008-01-31
申请人： Hidetoshi Nozaki , Howard E. Rhodes
发明人： Hidetoshi Nozaki , Howard E. Rhodes
IPC分类号： H01L31/0232 , H01L21/02
CPC分类号： H01L27/14625 , H01L27/14685
摘要： An array of pixels is formed using a substrate, where each pixel has a substrate having an incident side for receiving incident light, a photosensitive region formed in the substrate, and a reflector having a complex-shaped surface. The reflector is formed in a portion of the substrate that is opposed to the incident side such that light incident on the complex-shaped surface of the reflector is reflected towards the photosensitive region.
摘要翻译：使用基板形成像素阵列，其中每个像素具有用于接收入射光的入射侧的基板，形成在基板中的感光区域和具有复杂形状表面的反射器。反射器形成在与入射侧相对的基板的一部分中，使得入射在反射器的复合形状表面上的光被反射到感光区域。

129. 发明授权

US07535042B2 Pixel cell with a controlled output signal knee characteristic response 有权
标题翻译：具有受控输出信号的像素单元膝盖特征响应
公开(公告)号：US07535042B2
公开(公告)日：2009-05-19
申请号：US10881525
申请日：2004-07-01
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14689 , H01L31/035272
摘要： A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have the gate profile of a transfer gate or a reset gate. The HDR transistor may be located on a side of the photodiode that is the same, opposite to, or perpendicular to the transfer gate. The leakage through the HDR transistor may be controlled by modifying the photodiode implants around the transistor. The photodiode implants at the HDR transistor may be placed similarly to the implants at the transfer gate. However, when the photodiode implants are moved away from the HDR transistor, leakage is reduced. When the photodiode implants are moved farther under the HDR transistor, leakage is increased to the extent desirable. The leakage through the HDR transistor may also be controlled by applying a voltage across the transistor.
摘要翻译：具有受控泄漏的像素单元通过修改高动态范围（HDR）晶体管的位置和栅极分布来形成。 HDR晶体管可以具有传输门或复位栅的栅极分布。 HDR晶体管可以位于与传输门相同或垂直的光电二极管的一侧。可以通过修改晶体管周围的光电二极管植入来控制通过HDR晶体管的泄漏。在HDR晶体管处的光电二极管植入物可以类似于在传输门处的植入物放置。然而，当光电二极管植入物远离HDR晶体管时，漏电减少。当光电二极管植入物在HDR晶体管下移动得更远时，泄漏增加到期望的程度。也可以通过在晶体管两端施加电压来控制通过HDR晶体管的泄漏。

130. 发明申请

US20080318358A1 IMAGE SENSOR PIXEL HAVING PHOTODIODE WITH INDIUM PINNING LAYER 审中-公开
标题翻译：图像传感器像素具有带有刺激层的光致抗体
公开(公告)号：US20080318358A1
公开(公告)日：2008-12-25
申请号：US12200805
申请日：2008-08-28
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L31/18
CPC分类号： H01L27/14609 , H01L27/14689
摘要： An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. A pinning layer formed from indium is then formed at the surface of the N− region. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node. Finally, the pixel includes an amplification transistor controlled by the floating node.
摘要翻译：公开了使用由铟形成的钉扎层的钉扎光电二极管的有源像素。像素包括形成在半导体衬底中的光电二极管。光电二极管是形成在P型区域内的N-区域。然后在N区的表面形成由铟形成的钉扎层。此外，该像素包括形成在光电二极管和浮动节点之间的转移晶体管，并且选择性地操作以将信号从光电二极管传送到浮动节点。最后，像素包括由浮动节点控制的放大晶体管。

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