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    • 112. 发明申请
    • Efficient solar cells using all-organic nanocrystalline networks
    • 使用全有机纳米晶体网络的高效太阳能电池
    • US20100025663A1
    • 2010-02-04
    • US11880210
    • 2007-07-19
    • Kai SunFan YangStephen R. Forrest
    • Kai SunFan YangStephen R. Forrest
    • H01L51/46H01L51/48
    • H01L51/4246B82Y10/00H01L27/302H01L51/0008H01L51/0046H01L51/0078H01L51/4253Y02E10/549
    • An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer; depositing a layer of a second organic semiconductor material on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; and depositing the first organic semiconductor material on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed. The depositing of the first and second organic semiconductor materials are alternated a number of times until a final layer of the second organic material is added to form a continuous layer. A second electrode is deposited over this final layer. One of the first electrode and the second electrode is transparent, and the first organic semiconductor material is one or more donor-type materials or one or more acceptor-type materials relative to second organic semiconductor material, which is one or more materials of the other material type.
    • 光电子器件和制造光敏光电子器件的方法包括在第一电极上沉积第一有机半导体材料以形成连续的第一层; 在第一层上沉积第二有机半导体材料层以形成不连续的第二层,第一层的部分保持暴露; 以及将所述第一有机半导体材料沉积在所述第二层上以形成不连续的第三层,至少所述第二层的部分保持暴露。 第一和第二有机半导体材料的沉积多次交替,直到添加第二有机材料的最终层以形成连续层。 在该最终层上沉积第二电极。 第一电极和第二电极中的一个是透明的,并且第一有机半导体材料是相对于第二有机半导体材料的一种或多种施主型材料或一种或多种受主型材料,其是另一种或多种材料 材料类型
    • 113. 发明授权
    • Photovoltaic structure with a conductive nanowire array electrode
    • 具有导电纳米线阵列电极的光伏结构
    • US07635600B2
    • 2009-12-22
    • US11280423
    • 2005-11-16
    • Fengyan ZhangRobert A. BarrowcliffSheng Teng Hsu
    • Fengyan ZhangRobert A. BarrowcliffSheng Teng Hsu
    • H01L21/00
    • H01L51/4213B82Y10/00H01L51/0046H01L51/0048H01L51/4226H01L51/4233H01L51/441Y02E10/52Y02E10/549
    • A photovoltaic (PV) structure is provided, along with a method for forming a PV structure with a conductive nanowire array electrode. The method comprises: forming a bottom electrode with conductive nanowires; forming a first semiconductor layer of a first dopant type (i.e., n-type) overlying the nanowires; forming a second semiconductor layer of a second dopant type, opposite of the first dopant type (i.e., p-type), overlying the first semiconductor layer; and, forming a top electrode overlying the second semiconductor layer. The first and second semiconductor layers can be a material such as a conductive polymer, a conjugated polymer with a fullerene derivative, and inorganic materials such as CdSe, CdS, Titania, or ZnO. The conductive nanowires can be a material such as IrO2, In2O3, SnO2, or indium tin oxide (ITO).
    • 提供光伏(PV)结构以及用于形成具有导电纳米线阵列电极的PV结构的方法。 该方法包括:形成具有导电纳米线的底电极; 形成覆盖在纳米线上的第一掺杂剂型(即n型)的第一半导体层; 形成与所述第一掺杂剂类型(即,p型)相反的第二掺杂剂类型的第二半导体层,所述第二掺杂剂类型覆盖所述第一半导体层; 以及形成覆盖所述第二半导体层的顶部电极。 第一和第二半导体层可以是诸如导电聚合物,具有富勒烯衍生物的共轭聚合物和诸如CdSe,CdS,二氧化钛或ZnO的无机材料的材料。 导电纳米线可以是诸如IrO 2,In 2 O 3,SnO 2或氧化铟锡(ITO)的材料。