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111. 发明申请

US20150041432A1 SELF-SUSTAINED NON-AMBIPOLAR DIRECT CURRENT (DC) PLASMA AT LOW POWER 有权
标题翻译：低功耗自保持非直流电流（DC）等离子体
公开(公告)号：US20150041432A1
公开(公告)日：2015-02-12
申请号：US14168565
申请日：2014-01-30
申请人： Tokyo Electron Limited
发明人： Zhiying Chen , Lee Chen , Merritt Funk
IPC分类号： H01J37/32 , C23C16/505 , H01J37/08 , C23C16/50 , H01J37/06
CPC分类号： H01J37/32899 , H01J37/30 , H01J37/32082 , H01J37/3233
摘要： A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.
摘要翻译：公开了一种处理系统，其具有激发等离子体以产生电子束的电子束源室和容纳衬底并且还激发等离子体以产生离子束的离子束源室。处理系统还包括将电子束源室耦合到离子束源室的电介质注入器，其同时注入电子束和离子束，并以相反方向推进电子束和离子束。电子束源室和离子束源室之间的电压电位梯度产生足以维持作为等离子体的电子束和离子束的能量场，以使射频（RF）功率最初施加到处理可以终止产生电子束的系统，从而提高处理系统的功率效率。

112. 发明申请

US20140035458A1 PLASMA REACTOR WITH ELECTRON BEAM PLASMA SOURCE HAVING A UNIFORM MAGNETIC FIELD 有权
标题翻译：具有均匀磁场的电子束等离子体源的等离子体反应器
公开(公告)号：US20140035458A1
公开(公告)日：2014-02-06
申请号：US13945200
申请日：2013-07-18
申请人： Applied Materials, Inc.
发明人： Ming-Feng Wu , Ajit Balakrishna , Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra
IPC分类号： H01J37/32
CPC分类号： H01J37/32669 , H01J37/3233
摘要： Electron beam-confining electromagnets of an electron beam generator are aligned with an electron beam axis, each of the electromagnets being folded to define a main section and a pair of angled wing sections disposed at respective angles relative to said main section, and a conductor wound around the edge.
摘要翻译：电子束发生器的电子束约束电磁体与电子束轴线对准，每个电磁体被折叠以限定相对于所述主要部分以相应角度设置的主部分和一对成角度的翼部分，并且导体缠绕围绕边缘。

113. 发明申请

US20130284587A1 OZONE AND PLASMA GENERATION USING ELECTRON BEAM TECHNOLOGY 审中-公开
标题翻译：使用电子束技术的臭氧和等离子体生成
公开(公告)号：US20130284587A1
公开(公告)日：2013-10-31
申请号：US13993594
申请日：2011-12-16
申请人： Kaveh Bakhtari
发明人： Kaveh Bakhtari
IPC分类号： B01J19/08
CPC分类号： B01J19/085 , C01B13/10 , H01J3/02 , H01J33/00 , H01J37/3233 , H01J37/32357 , H01J37/32816
摘要： This invention proposes, among other things, systems and methods for providing ozone generators or plasma generators that generate an electric field in an electron generation chamber that is separate from a reaction chamber. An electron beam emitter in an electron generation chamber is configured to emit a beam of electrons and is separated from the reaction chamber by an electron permeable barrier that provides a window through which the beam of electrons passes. The electrons are accelerated to the required energy in the electron generation chamber and transmitted through the barrier to the reaction chamber, where an input gas source introduces an input gas into the reaction chamber. The input gas may react with the beam of electrons inside the reaction chamber to form an output gas comprising a plasma or a concentration of ozone, and the output gas passes from the reaction chamber to a wafer processing chamber.
摘要翻译：本发明尤其提出了用于提供在与反应室分离的电子发生室中产生电场的臭氧发生器或等离子体发生器的系统和方法。电子发生室中的电子束发射器被配置为发射电子束，并且通过电子可透过屏障与反应室分离，所述电子透过屏障提供电子束通过的窗口。电子被加速到电子发生室中所需的能量，并通过势垒传递到反应室，其中输入气体源将输入气体引入反应室。输入气体可以与反应室内的电子束反应形成包含等离子体或浓度的臭氧的输出气体，并且输出气体从反应室通到晶片处理室。

114. 发明申请

US20110318498A1 Coaxial Hollow Cathode Plasma Assisted Directed Vapor Deposition and Related Method Thereof 有权
标题翻译：同轴空心阴极等离子体辅助导向气相沉积及其相关方法
公开(公告)号：US20110318498A1
公开(公告)日：2011-12-29
申请号：US13202828
申请日：2010-02-24
申请人： Haydn N.G. Wadley , Goesta Mattausch , Henry Morgner , Frank-Holm Roegner
发明人： Haydn N.G. Wadley , Goesta Mattausch , Henry Morgner , Frank-Holm Roegner
IPC分类号： C23C16/50 , C23C16/52 , C23C16/515 , C23C16/503 , C23C16/48
CPC分类号： H01J37/32596 , C23C14/228 , C23C14/246 , C23C14/30 , C23C14/32 , H01J37/3053 , H01J37/32055 , H01J37/3233 , H01J37/32339 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01J37/34 , H01J2237/332
摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.
摘要翻译：通常对气相沉积方法进行更优化的等离子体生成方法，特别是用于定向气相沉积处理。这种方法的特征使得能够稳定和可靠地同轴等离子体能力，其中等离子体射流与蒸气羽流同轴，而不是产生先前缺点的正交构造。以这种方式，可以避免先前由空心阴极管的工作气体流引起的蒸汽气体射流的变形，并且可以显着地减少用于成形蒸气羽流所需的载气消耗。

115. 发明申请

US20110308461A1 Electron Beam Enhanced Nitriding System (EBENS) 审中-公开
标题翻译：电子束增强氮化系统（EBENS）
公开(公告)号：US20110308461A1
公开(公告)日：2011-12-22
申请号：US12857560
申请日：2010-08-17
申请人： Scott G. Walton , Darrin Leonhardt , Robert A. Meger , Richard Fernsler , Christopher Muratore
发明人： Scott G. Walton , Darrin Leonhardt , Robert A. Meger , Richard Fernsler , Christopher Muratore
IPC分类号： C23C8/24 , C23C8/26 , C23C8/36
CPC分类号： H01J37/3233 , C23C8/36 , H01J37/32009 , H01J2237/3387 , H05H1/26 , H05H2245/123
摘要： An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
摘要翻译：电子束增强氮化系统，其使高能电子束通过氮气，形成能够将氮离子和自由基输送到被氮化的衬底的低电子温度等离子体。衬底可以安装在电极上，并且衬底可被偏置和加热。

116. 发明授权

US07866278B2 Thin-film deposition system 有权
标题翻译：薄膜沉积系统
公开(公告)号：US07866278B2
公开(公告)日：2011-01-11
申请号：US12122781
申请日：2008-05-19
申请人： Toru Takashima , Yoshikazu Homma
发明人： Toru Takashima , Yoshikazu Homma
IPC分类号： C23C16/00 , C23C14/00 , C25B11/00 , C25B13/00
CPC分类号： C23C14/32 , H01J37/32009 , H01J37/3233 , H01J37/32357
摘要： A thin-film deposition system has a vacuum chamber and a plasma generator. The plasma generator includes a case, a cathode disposed in the case, an anode assembly disposed at an end of the case, a discharge power supply for applying a discharge voltage between the cathode and the anode assembly, and a gas supply means for supplying a discharge gas into the case. Electrons within a first plasma produced in the case are extracted into the vacuum chamber according to the discharge voltage. An evaporated material in a gaseous state inside the vacuum chamber is irradiated with electrons emitted from the plasma generator to produce a second plasma. The potential at the anode assembly is controlled by anode potential-controlling means such that the electrons within the second plasma are directed at the plasma generator and the ions within the second plasma are directed at the substrate.
摘要翻译：薄膜沉积系统具有真空室和等离子体发生器。等离子体发生器包括壳体，设置在壳体中的阴极，设置在壳体的端部的阳极组件，用于在阴极和阳极组件之间施加放电电压的放电电源，以及用于提供将气体排放到壳体内。在这种情况下产生的第一等离子体内的电子根据放电电压被提取到真空室中。在真空室内的气态蒸发材料被从等离子体发生器发射的电子照射以产生第二等离子体。阳极组件处的电位由阳极电位控制装置控制，使得第二等离子体内的电子被引导到等离子体发生器，并且第二等离子体内的离子被引导到衬底。

117. 发明授权

US07569484B2 Plasma and electron beam etching device and method 失效
标题翻译：等离子体和电子束蚀刻装置及方法
公开(公告)号：US07569484B2
公开(公告)日：2009-08-04
申请号：US11503762
申请日：2006-08-14
申请人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
发明人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
IPC分类号： H01L21/4763
CPC分类号： H01L21/31116 , C23C16/0245 , C23C16/042 , C23C16/26 , C23C16/517 , H01J37/28 , H01J37/3178 , H01J37/3233 , H01J2237/2605 , H01J2237/3137 , H01J2237/3151 , H01J2237/31732 , H01J2237/3174 , H01L27/1052 , Y10S438/905 , Y10S438/909
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
摘要翻译：示出了在半导体工艺中选择性蚀刻的方法和装置。在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。电子束为选择性化学物质提供活化。在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

118. 发明申请

US20080245478A1 Surface treatment apparatus 审中-公开
标题翻译：表面处理装置
公开(公告)号：US20080245478A1
公开(公告)日：2008-10-09
申请号：US12081913
申请日：2008-04-23
申请人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
发明人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： C23F1/00 , C23C16/448
CPC分类号： H01J37/32706 , H01J37/32009 , H01J37/3233 , H05H1/2406 , H05H2001/2412
摘要： A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from downstream end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at upstream side of the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10−7 to 10−1 is applied across the first main electrode and second main electrode, to generate a non-thermal equilibrium plasma flow in the inside of the treatment object, and thereby an inner surface of the treatment object is treated.
摘要翻译：表面处理装置包括：气体导入系统，其构造成从管状处理对象的下游端引入处理气体; 真空排气系统，其构造成从处理对象的另一端抽出处理气体; 设置在处理对象的上游侧的激发粒子供给系统，被配置为在被处理体的主体内供给用于引发初始排出的激发粒子; 以及相对设置的第一主电极和第二主电极，将处理对象的处理区域设定为设置在其间的主等离子体产生区域，其中所述激发粒子供给系统至少被驱动至主等离子体的产生，以及在第一主电极和第二主电极上施加10 -7至10 -6的主脉冲占空比，以在第一主电极和第二主电极中产生非热平衡等离子体流在处理对象内部，从而处理对象的内表面。

119. 发明申请

US20080156771A1 ETCHING APPARATUS USING NEUTRAL BEAM AND METHOD THEREOF 审中-公开
标题翻译：使用中性光束的蚀刻装置及其方法
公开(公告)号：US20080156771A1
公开(公告)日：2008-07-03
申请号：US11965956
申请日：2007-12-28
申请人： Yun Kwang JEON , Jin Seok Lee , Yung Hee Lee , Gi Tae Kim
发明人： Yun Kwang JEON , Jin Seok Lee , Yung Hee Lee , Gi Tae Kim
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： H01J37/3233 , H01J37/32357
摘要： An etching apparatus using a neutral beam includes an electron emission unit to convert an ion beam, extracted from plasma by a plurality of grids, into a neutral beam by colliding the ion beam with electrons to prevent the ion beam from physically colliding with the electron emission unit, thus preventing the damage to a neutralization unit and generation of foreign substances with a simple structure. Further, the etching apparatus converts the ion beam into the neutral beam at a high neutralizing efficiency without causing directionality and energy losses, and generates a neutral beam having a large area, thus uniformly etching a semiconductor wafer.
摘要翻译：使用中性光束的蚀刻装置包括电子发射单元，用于通过使离子束与电子碰撞来将通过多个栅极从等离子体提取的离子束转换成中性束，以防止离子束与电子发射物理碰撞单元，从而防止中和单元的损坏和结构简单的异物的产生。此外，蚀刻装置以高中和效率将离子束转换成中性光束，而不引起方向性和能量损失，并且产生具有大面积的中性光束，因此均匀地蚀刻半导体晶片。

120. 发明申请

US20080078957A1 Methods for beam current modulation by ion source parameter modulation 有权
标题翻译：离子源参数调制的束电流调制方法
公开(公告)号：US20080078957A1
公开(公告)日：2008-04-03
申请号：US11541087
申请日：2006-09-29
申请人： Michael A. Graf , Edward C. Eisner , William F. DiVergilio , Daniel R. Tieger
发明人： Michael A. Graf , Edward C. Eisner , William F. DiVergilio , Daniel R. Tieger
IPC分类号： H01J37/08
CPC分类号： H01J37/3233 , H01J37/08 , H01J37/304 , H01J37/3171 , H01J37/32357 , H01J37/32935 , H01J2237/0817 , H01J2237/082 , H01J2237/24535 , H01J2237/30472 , H01J2237/31701 , H01L21/265
摘要： Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.
摘要翻译：通过调整离子源的一个或多个参数，在离子注入期间调整光束电流。离子束由非电弧放电型离子源（例如电子枪驱动离子源或RF驱动离子源）产生或提供。确定射束电流调节量。然后，根据确定的光束电流调节量来调整离子源的一个或多个参数。提供具有调制束电流的束电流。

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