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111. 发明授权

US08674513B2 Interconnect structures for substrate 有权
标题翻译：基板互连结构
公开(公告)号：US08674513B2
公开(公告)日：2014-03-18
申请号：US12779734
申请日：2010-05-13
申请人： Chen-Hua Yu , Wen-Chih Chiou , Shin-Puu Jeng , Tsang-Jiuh Wu
发明人： Chen-Hua Yu , Wen-Chih Chiou , Shin-Puu Jeng , Tsang-Jiuh Wu
IPC分类号： H01L23/522
CPC分类号： H01L21/76895 , H01L21/563 , H01L21/76883 , H01L21/76898 , H01L23/147 , H01L23/481 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49894 , H01L23/5283 , H01L25/0657 , H01L25/18 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/16238 , H01L2224/32145 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2225/06517 , H01L2225/06548 , H01L2225/06572 , H01L2225/06589 , H01L2924/01019 , H01L2924/01025 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/15311 , H01L2924/00
摘要： A device for use with integrated circuits is provided. The device includes a substrate having a through-substrate via formed therethrough. Dielectric layers are formed over at least one side of the substrate and metallization layers are formed within the dielectric layers. A first metallization layer closest to the through-substrate via is larger than one or more overlying metallization layers. In an embodiment, a top metallization layer is larger than one or more underlying metallization layers. Integrated circuit dies may be attached to the substrate on either or both sides of the substrate, and either side of the substrate may be attached to another substrate, such as a printed circuit board, a high-density interconnect, a packaging substrate, an organic substrate, a laminate substrate, or the like.
摘要翻译：提供了一种与集成电路一起使用的装置。该器件包括具有通过其形成的贯通基板通孔的基板。电介质层形成在衬底的至少一侧上，并且在电介质层内形成金属化层。最靠近贯穿衬底通孔的第一金属化层大于一个或多个上覆的金属化层。在一个实施例中，顶部金属化层大于一个或多个下面的金属化层。集成电路管芯可以在衬底的一侧或两侧附着到衬底，并且衬底的任一侧可以附接到另一个衬底，例如印刷电路板，高密度互连，封装衬底，有机基板，层叠基板等。

112. 发明授权

US08567837B2 Reconfigurable guide pin design for centering wafers having different sizes 有权
公开(公告)号：US08567837B2
公开(公告)日：2013-10-29
申请号：US12954180
申请日：2010-11-24
申请人： Hsin Chang , Hsin-Yu Chen , Fang Wen Tsai , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人： Hsin Chang , Hsin-Yu Chen , Fang Wen Tsai , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号： B66F19/00
CPC分类号： H01L21/6875 , B65G47/90 , H01L21/68707 , Y10T74/20305
摘要： An apparatus includes a robot arm, and a plurality of guide pins mounted on the robot arm. Each of the plurality of guide pins includes a plurality of wafer supports at different levels, with each of the plurality of wafer supports configured to support and center a wafer having a size different from wafers configured to be supported and centered by remaining ones of the plurality of wafer supports.

113. 发明授权

US08540506B2 Semiconductor molding chamber 有权
公开(公告)号：US08540506B2
公开(公告)日：2013-09-24
申请号：US12857245
申请日：2010-08-16
申请人： Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人： Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号： H01L21/56
CPC分类号： H01L21/56 , H01L21/561 , H01L21/565 , H01L21/67126 , H01L23/3121 , H01L24/94 , H01L2224/16145 , H01L2224/81191 , H01L2224/81192 , H01L2224/94 , H01L2924/181 , H01L2224/81 , H01L2924/00
摘要： A system and method for a semiconductor molding chamber is disclosed. An embodiment comprises a top molding portion and a bottom molding portion that form a cavity between them into which a semiconductor wafer is placed. The semiconductor molding chamber has a first set of vacuum tubes which hold and fix the position of the semiconductor wafer and a second set of vacuum tubes which evacuate the cavity of extraneous ambient gasses. The encapsulant may then be placed over the semiconductor wafer in order to encapsulate the semiconductor wafer.

114. 发明授权

US08525200B2 Light-emitting diode with non-metallic reflector 有权
标题翻译：具有非金属反射器的发光二极管
公开(公告)号：US08525200B2
公开(公告)日：2013-09-03
申请号：US12269497
申请日：2008-11-12
申请人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/16 , H01L33/0079 , H01L33/10
摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure.
摘要翻译：提供了一种发光二极管（LED）装置。 LED器件具有衬底，衬底上的反射结构以及反射结构上的LED结构。反射结构由非金属材料形成。在一个实施例中，反射结构由具有不同折射率的不同非金属材料的交替层形成。在另一个实施例中，反射结构由高孔隙率硅和低孔隙率硅的交替层形成。在另一个实施例中，反射结构由二氧化硅形成，其可以允许使用更少的层。反射结构可以直接形成在与LED结构相同的基板上，或者形成在单独的基板上，然后结合到LED结构。

115. 发明授权

US08486730B2 Method of separating light-emitting diode from a growth substrate 有权
标题翻译：从生长衬底分离发光二极管的方法
公开(公告)号：US08486730B2
公开(公告)日：2013-07-16
申请号：US13567734
申请日：2012-08-06
申请人： Ding-Yuan Chen , Hung-Ta Lin , Chen-Hua Yu , Wen-Chih Chiou
发明人： Ding-Yuan Chen , Hung-Ta Lin , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L21/00 , H01L29/06 , H01L31/00
CPC分类号： H01L33/007 , C23C14/048 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L25/167 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
摘要翻译：提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。该方法包括在生长衬底上形成和图案化掩模层。在图案化掩模层之上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。第一接触层可以是LED结构的接触层。在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

116. 发明授权

US08319349B2 Approach for bonding dies onto interposers 有权
公开(公告)号：US08319349B2
公开(公告)日：2012-11-27
申请号：US13342583
申请日：2012-01-03
申请人： Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
发明人： Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
IPC分类号： H01L23/48
CPC分类号： H01L21/561 , H01L21/486 , H01L23/147 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/97 , H01L25/0655 , H01L2224/05001 , H01L2224/05027 , H01L2224/05571 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要： A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.

117. 发明申请

US20120289062A1 Liner Formation in 3DIC Structures 有权
标题翻译： 3DIC结构中的衬板形成
公开(公告)号：US20120289062A1
公开(公告)日：2012-11-15
申请号：US13562101
申请日：2012-07-30
申请人： Ching-Yu Lo , Hung-Jung Tu , Hai-Ching Chen , Tien-I Bao , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ching-Yu Lo , Hung-Jung Tu , Hai-Ching Chen , Tien-I Bao , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L21/71
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/481 , H01L24/02 , H01L2221/68372 , H01L2224/0557 , H01L2924/00014 , H01L2924/0002 , H01L2924/01019 , H01L2924/04941 , H01L2924/12042 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2224/05552 , H01L2924/00
摘要： An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.
摘要翻译：集成电路结构包括半导体衬底; 贯穿半导体衬底的贯通半导体通孔（TSV）开口; 和TSV开口的TSV衬管。 TSV衬套包括在TSV开口的侧壁上的侧壁部分和TSV开口底部的底部。 TSV衬管的底部部分的底部高度大于TSV衬套的侧壁部分的中间厚度。

118. 发明申请

US20120128457A1 Reconfigurable Guide Pin Design for Centering Wafers Having Different Sizes 有权
标题翻译：可重构导向针设计，用于定心不同尺寸的晶圆
公开(公告)号：US20120128457A1
公开(公告)日：2012-05-24
申请号：US12954180
申请日：2010-11-24
申请人： Hsin Chang , Hsin-Yu Chen , Fang Wen Tsai , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人： Hsin Chang , Hsin-Yu Chen , Fang Wen Tsai , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号： B65G1/133 , B25J18/00
CPC分类号： H01L21/6875 , B65G47/90 , H01L21/68707 , Y10T74/20305
摘要： An apparatus includes a robot arm, and a plurality of guide pins mounted on the robot arm. Each of the plurality of guide pins includes a plurality of wafer supports at different levels, with each of the plurality of wafer supports configured to support and center a wafer having a size different from wafers configured to be supported and centered by remaining ones of the plurality of wafer supports
摘要翻译：一种装置包括机器人臂和安装在机器人手臂上的多个引导销。多个引导销中的每一个包括多个不同级别的晶片支架，其中多个晶片支撑件中的每一个被配置为支撑和定心具有不同晶圆尺寸的晶片，所述晶片被配置为被多个晶圆支撑的中心部分支撑并居中的晶片支架

119. 发明申请

US20120025368A1 Semiconductor Device Cover Mark 有权
标题翻译：半导体器件封面
公开(公告)号：US20120025368A1
公开(公告)日：2012-02-02
申请号：US12847802
申请日：2010-07-30
申请人： Yan-Fu Lin , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人： Yan-Fu Lin , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号： H01L23/544 , H01L21/56 , H01L23/498
CPC分类号： H01L21/563 , H01L23/49838 , H01L23/544 , H01L24/11 , H01L24/81 , H01L2223/54413 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2223/5448 , H01L2223/54486 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/11462 , H01L2224/11849 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/81815 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/351 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A system and method for determining underfill expansion is provided. An embodiment comprises forming cover marks along a top surface of a substrate, attaching a semiconductor substrate to the top surface of the substrate, placing an underfill material between the semiconductor substrate and the substrate, and then using the cover marks to determine the expansion of the underfill over the top surface of the substrate. Additionally, cover marks may also be formed along a top surface of the semiconductor substrate, and the cover marks on both the substrate and the semiconductor substrate may be used together as alignment marks during the alignment of the substrate and the semiconductor substrate.
摘要翻译：提供了一种用于确定底部填充膨胀的系统和方法。一个实施例包括沿着衬底的顶表面形成覆盖标记，将半导体衬底附接到衬底的顶表面，将底部填充材料放置在半导体衬底和衬底之间，然后使用覆盖标记来确定底部填充在基材的顶表面上。此外，也可以沿着半导体衬底的顶表面形成覆盖标记，并且衬底和半导体衬底上的覆盖标记可以在衬底和半导体衬底的对准期间一起用作对准标记。

120. 发明申请

US20120025222A1 Light-Emitting Diode Integration Scheme 有权
标题翻译：发光二极管集成方案
公开(公告)号：US20120025222A1
公开(公告)日：2012-02-02
申请号：US13269968
申请日：2011-10-10
申请人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L33/62
CPC分类号： H01L25/0753 , H01L33/642 , H01L33/647 , H01L2224/48091 , H01L2224/48227 , H05K1/0206 , H05K1/113 , H05K2201/10106 , H01L2924/00014 , H01L2924/00
摘要： A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.
摘要翻译：电路结构包括载体基板，其包括第一通孔和第二通孔。第一通孔和第二通孔中的每一个从载体衬底的第一表面延伸到与第一表面相对的载体衬底的第二表面。电路结构还包括结合到载体基板的第一表面上的发光二极管（LED）芯片。 LED芯片包括分别连接到第一通孔和第二通孔的第一电极和第二电极。

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