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111. 发明授权

US08085825B2 Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus 失效
标题翻译：制造半导体激光二极管装置和半导体激光二极管装置的方法
公开(公告)号：US08085825B2
公开(公告)日：2011-12-27
申请号：US12043724
申请日：2008-03-06
申请人： Masayuki Hata , Yasumitsu Kunoh , Yasuyuki Bessho
发明人： Masayuki Hata , Yasumitsu Kunoh , Yasuyuki Bessho
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0216 , H01L2224/48247 , H01S5/0201 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/22 , H01S5/32341 , H01S5/4031 , H01S5/4087 , H01S2304/04
摘要： A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.
摘要翻译：获得了当半导体激光二极管部分的宽度小时也能够抑制半导体激光二极管处理困难的半导体激光二极管装置。这种制造半导体激光二极管装置的方法包括以下步骤：在与第一方向交叉的第二方向上以规定的间隔在第一基板上形成多个第一半导体激光二极管部分，其中第一方向与空腔延伸，将多个第一半导体激光二极管部分的第一半导体激光二极管部分分配到第二基板，将与第二基板接合的多个第一半导体激光二极管部分中的一个或一些与第一基板分离; 以及沿着所述第二方向分割所述第二基板。

112. 发明授权

US08064492B2 Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus 失效
标题翻译：制造半导体激光装置的方法，半导体激光装置及照明装置
公开(公告)号：US08064492B2
公开(公告)日：2011-11-22
申请号：US12693169
申请日：2010-01-25
申请人： Yasuyuki Bessho , Hiroki Ohbo , Kunio Takeuchi , Seiichi Tokunaga , Yasumitsu Kunoh , Masayuki Hata
发明人： Yasuyuki Bessho , Hiroki Ohbo , Kunio Takeuchi , Seiichi Tokunaga , Yasumitsu Kunoh , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , B82Y20/00 , G11B7/1275 , G11B7/22 , H01L2224/16145 , H01L2224/48091 , H01L2224/73257 , H01L2224/73265 , H01S5/0202 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/34333 , H01S5/4087 , H04N9/3161 , H01L2924/00014
摘要： A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.
摘要翻译：一种制造半导体激光器件的方法包括以下步骤：形成第一半导体激光器件衬底，其具有用于在其表面上切割的第一凹槽，将第二半导体激光器件衬底接合到具有第一沟槽的表面侧上，然后切割第一和第二沿着至少第一凹槽的半导体激光器件衬底。

113. 发明授权

US07939929B2 Semiconductor laser device and method of fabricating semiconductor laser device 失效
标题翻译：半导体激光器件及半导体激光器件的制造方法
公开(公告)号：US07939929B2
公开(公告)日：2011-05-10
申请号：US11529475
申请日：2006-09-29
申请人： Masayuki Hata
发明人： Masayuki Hata
IPC分类号： H01L23/52
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/0213 , H01S5/02272 , H01S5/02492 , H01S5/0425 , H01S5/2009 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2301/176 , H01S2304/04 , H01S2304/12
摘要： A semiconductor laser device includes a supporting substrate; a semiconductor laser device portion which is formed on a surface of the supporting substrate, and which includes a pair of cavity surfaces; an adhesive layer with which the supporting substrate and the semiconductor laser device portion are adhered to each other; and areas, in which no adhesive layer exists, the areas being near the ends respectively of the cavity surfaces, the ends being closer to the supporting substrate.
摘要翻译：半导体激光装置包括：支撑基板; 半导体激光器件部分，其形成在所述支撑基板的表面上，并且包括一对空腔表面; 支撑基板和半导体激光装置部分彼此粘合的粘合层; 以及其中没有粘合剂层的区域，分别位于空腔表面的端部附近的区域，端部更靠近支撑衬底。

114. 发明申请

US20110013659A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110013659A1
公开(公告)日：2011-01-20
申请号：US12919847
申请日：2009-02-25
申请人： Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
发明人： Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
IPC分类号： H01S5/028 , H01L21/30
CPC分类号： H01S5/10 , B82Y20/00 , H01L2224/48463 , H01L2224/73265 , H01S5/0202 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/02276 , H01S5/028 , H01S5/1064 , H01S5/3211 , H01S5/34333 , H01S5/4031
摘要： A semiconductor laser device having a cladding layer in the vicinity of an active layer capable of being inhibited from cracking is obtained. This semiconductor laser device (100) includes a first semiconductor device portion (120) and a support substrate (10) bonded to the first semiconductor device portion, and the first semiconductor device portion has a cavity, a first conductivity type first cladding layer (22) having a first region (22a) having a first width in a second direction (direction A) intersecting with a first direction (direction B) in which the cavity extends and a second region (22b) having a second width smaller than the first width in the second direction, formed on the first region, and a first active layer (23) and a second conductivity type second cladding layer (24) formed on the second region of the first cladding layer.
摘要翻译：获得具有能够抑制裂纹的有源层附近的包覆层的半导体激光装置。该半导体激光器件（100）包括接合到第一半导体器件部分的第一半导体器件部分（120）和支撑衬底（10），并且第一半导体器件部分具有腔体，第一导电类型的第一覆盖层（22 ）具有第一区域（22a），所述第一区域（22a）在与所述空腔延伸的第一方向（方向B）相交的第二方向（方向A）上具有第一宽度，以及具有小于所述第一宽度的第二宽度的第二区域形成在第一区域上的第二方向，以及形成在第一包层的第二区域上的第一有源层（23）和第二导电型第二覆盖层（24）。

115. 发明授权

US07829900B2 Nitride-based semiconductor element and method of forming nitride-based semiconductor 有权
标题翻译：基于氮化物的半导体元件和形成氮化物基半导体的方法
公开(公告)号：US07829900B2
公开(公告)日：2010-11-09
申请号：US12071978
申请日：2008-02-28
申请人： Masayuki Hata , Tatsuya Kunisato , Nobuhiko Hayashi
发明人： Masayuki Hata , Tatsuya Kunisato , Nobuhiko Hayashi
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01S5/0207 , H01S5/22 , H01S5/2214 , H01S5/227 , H01S5/34333 , H01S2304/12
摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.
摘要翻译：获得具有优异的质量生产率和优异的元件特性的氮化物基半导体元件。该氮化物系半导体元件包括基板，该基板包括具有突出部的表面，形成为仅与基板的表面的突出部接触的掩模层，形成在基板的凹部的第一氮化物系半导体层以及形成在具有元件区域的第一氮化物系半导体层上的掩模层和氮化物系半导体元件层。因此，具有低位错密度的第一氮化物基半导体层通过用于选择生长的掩模层容易地形成在衬底和掩模层的突出部分上。当在具有低位错密度的第一氮化物基半导体层上生长具有元素区域的氮化物基半导体元件层时，可以容易地获得具有优异元素特性的氮化物基半导体元件。第一氮化物基半导体层仅通过基板上的单一生长形成，从而获得具有优异的批量生产率的氮化物基半导体元件。

116. 发明授权

US07773654B2 Semiconductor laser apparatus and fabrication method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07773654B2
公开(公告)日：2010-08-10
申请号：US11092947
申请日：2005-03-30
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
摘要翻译：蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。这导致第一p电极的一部分被暴露。蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。

117. 发明申请

US20090097523A1 SEMICONDUCTOR LASER APPARATUS AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20090097523A1
公开(公告)日：2009-04-16
申请号：US12333764
申请日：2008-12-12
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01S5/4087
摘要： Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.
摘要翻译：第二和第三p侧焊盘电极形成在第一p侧焊盘电极两侧的蓝紫色半导体激光器件的绝缘膜上。第二p侧焊盘电极和第三p侧焊盘电极彼此分开地形成。焊接膜分别形成在第二和第三p侧焊盘电极的上表面上。红色半导体激光器件的第四p侧焊盘电极被粘合到第二p侧焊盘电极上，其中夹有相应的焊料膜。红外半导体激光器件的第五p侧焊盘电极被粘合到第三p侧焊盘电极上，其中夹有相应的焊料膜。第二和第三p侧焊盘电极彼此分开地形成，使得第四和第五p侧焊盘电极彼此电隔离。

118. 发明申请

US20080310471A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20080310471A1
公开(公告)日：2008-12-18
申请号：US12137214
申请日：2008-06-11
申请人： Yasuyuki Bessho , Masayuki Hata , Hiroki Ohbo
发明人： Yasuyuki Bessho , Masayuki Hata , Hiroki Ohbo
IPC分类号： H01S5/00 , H01L21/00
CPC分类号： H01S5/4043 , H01L2224/32145 , H01S5/0202 , H01S5/0216 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/4087
摘要： A semiconductor laser device includes a first semiconductor laser element formed on a surface of a first conductive type substrate, obtained by stacking a first conductive type first semiconductor layer, a first active layer and a second conductive type second semiconductor layer successively from the first conductive type substrate and a second semiconductor laser element obtained by successively stacking a first conductive type third semiconductor layer, a second active layer and a second conductive type fourth semiconductor layer, wherein the third semiconductor layer is electrically connected to the first semiconductor layer by bonding a side of the third semiconductor layer to the surface of the first conductive type substrate through a fusible layer.
摘要翻译：半导体激光器件包括：第一半导体激光器元件，其形成在第一导电型基板的表面上，所述第一半导体激光元件通过从第一导电类型连续地层叠第一导电类型的第一半导体层，第一有源层和第二导电类型的第二半导体层而获得; 基板和通过连续堆叠第一导电类型的第三半导体层，第二有源层和第二导电型第四半导体层而获得的第二半导体激光元件，其中第三半导体层通过将第第三半导体层通过可熔层提供到第一导电类型基板的表面。

119. 发明申请

US20080267238A1 SEMICONDUCTOR LASER DIODE ELEMENT AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光二极管元件及其制造方法
公开(公告)号：US20080267238A1
公开(公告)日：2008-10-30
申请号：US12109989
申请日：2008-04-25
申请人： Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
发明人： Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
IPC分类号： H01S5/24
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/0202 , H01S5/0216 , H01S5/0217 , H01S5/02212 , H01S5/02272 , H01S5/2009 , H01S5/3201 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farther from the ridge portion and holding the groove between the support portion and the ridge portion and a support substrate bonded to the semiconductor laser diode portion through a fusion layer, wherein the fusion layer is formed so as to be embedded in the groove, a space from the ridge portion to the support substrate and a space from the support portion to the support substrate.
摘要翻译：半导体激光二极管元件包括半导体激光二极管部分，其包括在空腔延伸的第一方向上延伸的脊部分，沿着脊部形成的凹槽和沿着更远离脊部的一侧沿着凹槽形成的支撑部分，以及保持所述支撑部和所述脊部之间的槽，以及通过熔融层粘合到所述半导体激光二极管部的支撑基板，其中，所述熔融层形成为嵌入所述槽中，从所述脊部到支撑基板和从支撑部分到支撑基板的空间。

120. 发明申请

US20070274360A1 Semiconductor laser element and semiconductor laser device 审中-公开
标题翻译：半导体激光元件和半导体激光器件
公开(公告)号：US20070274360A1
公开(公告)日：2007-11-29
申请号：US11710922
申请日：2007-02-27
申请人： Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
发明人： Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/2223
摘要： A semiconductor laser element includes a semiconductor layer, an insulating layer and an electrode. The semiconductor layer is formed on a substrate, and includes a raised portion extending along a predetermined direction and flat portions provided on outer sides in a width direction of the raised portion. The insulating layer is formed on upper surfaces of the flat portions and side surfaces of the raised portion. The electrode includes a first portion provided along the predetermined direction on the raised portion and a second portion including a plurality of protruding portions protruding outward from the first portion in the width direction of the raised portion. A gap through which the insulating layer is exposed is provided between each adjacent two of the plurality of protruding portions.
摘要翻译：半导体激光元件包括半导体层，绝缘层和电极。半导体层形成在基板上，并且包括沿着预定方向延伸的凸起部分和设置在凸起部分的宽度方向上的外侧的平坦部分。绝缘层形成在凸起部分的平坦部分和侧表面的上表面上。电极包括沿着预定方向设置在凸起部分上的第一部分和第二部分，其包括从凸起部分的宽度方向上的第一部分向外突出的多个突出部分。在相邻的两个突出部分之间设置有绝缘层暴露的间隙。

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