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111. 发明授权

US07176488B2 Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof 有权
标题翻译：具有柔性基板上的保护盖的薄膜晶体管，使用其的电子器件及其制造方法
公开(公告)号：US07176488B2
公开(公告)日：2007-02-13
申请号：US10748271
申请日：2003-12-31
申请人： Do-young Kim , Wan-jun Park , Young-soo Park , June-key Lee , Yo-sep Min , Jang-yeon Kwon , Sun-ae Seo , Young-min Choi , Soo-doo Chae
发明人： Do-young Kim , Wan-jun Park , Young-soo Park , June-key Lee , Yo-sep Min , Jang-yeon Kwon , Sun-ae Seo , Young-min Choi , Soo-doo Chae
IPC分类号： H01L29/04 , H01L31/20
CPC分类号： H01L29/78603 , G02F1/133305 , G02F1/136227 , G02F2201/50 , H01L23/3192 , H01L24/24 , H01L24/82 , H01L27/1214 , H01L27/3248 , H01L27/3258 , H01L29/66757 , H01L51/5253 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2251/5338 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01058 , H01L2924/01078 , H01L2924/01082 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/00
摘要： In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.
摘要翻译：在柔性基板上实现的薄膜半导体器件，使用该薄膜半导体器件的电子器件及其制造方法中，薄膜半导体器件和电子器件包括柔性基板，形成在柔性基板上的半导体芯片以及密封半导体芯片的保护盖。通过使用保护盖，可以提高薄膜半导体器件对由于基板弯曲引起的应力的耐久性。

112. 发明授权

US07009868B2 Memory device having a transistor and one resistant element as a storing means and method for driving the memory device 有权
标题翻译：具有晶体管和一个电阻元件作为存储装置的存储装置和用于驱动存储装置的方法
公开(公告)号：US07009868B2
公开(公告)日：2006-03-07
申请号：US10995116
申请日：2004-11-24
申请人： In-kyeong Yoo , Sun-ae Seo , Hyun-jo Kim
发明人： In-kyeong Yoo , Sun-ae Seo , Hyun-jo Kim
IPC分类号： G11C11/00
CPC分类号： H01L27/11206 , G11C16/0475 , H01L27/112
摘要： A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.
摘要翻译：具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜，形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电板接触抵抗材料。存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

113. 发明申请

US20050145896A1 Memory device and method of manufacturing the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US20050145896A1
公开(公告)日：2005-07-07
申请号：US11002812
申请日：2004-12-03
申请人： In-jae Song , Won-joo Kim , Sun-ae Seo
发明人： In-jae Song , Won-joo Kim , Sun-ae Seo
IPC分类号： H01L21/8247 , H01L21/28 , H01L21/336 , H01L21/8242 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/66833
摘要： A memory device and a method of fabricating the same are provided. The method includes forming a gate stack on a semiconductor substrate and partially exposing upper end portions of the semiconductor substrate by etching the gate stack to form a gate stack structure, and implanting a dopant into the exposed portions of the semiconductor substrate to form source and drain regions, wherein the gate stack structure is etched such that its width increases from top to bottom. Accordingly, it is possible to manufacture a memory device with high integration, using a simplified manufacture process.
摘要翻译：提供了一种存储器件及其制造方法。该方法包括在半导体衬底上形成栅极叠层，并通过蚀刻栅叠层来部分地暴露半导体衬底的上端部分以形成栅叠层结构，并将掺杂剂注入半导体衬底的暴露部分以形成源极和漏极区域，其中蚀刻栅极堆叠结构，使得其宽度从顶部向底部增加。因此，可以使用简化的制造工艺来制造具有高集成度的存储器件。

114. 发明授权

US08994079B2 Graphene electronic devices having multi-layered gate insulating layer 有权
标题翻译：具有多层栅极绝缘层的石墨烯电子器件
公开(公告)号：US08994079B2
公开(公告)日：2015-03-31
申请号：US13491999
申请日：2012-06-08
申请人： Hyun-jae Song , Byung-jin Cho , Sun-ae Seo , Woo-cheol Shin
发明人： Hyun-jae Song , Byung-jin Cho , Sun-ae Seo , Woo-cheol Shin
IPC分类号： H01L29/76 , H01L29/778 , H01L29/16 , H01L29/51
CPC分类号： H01L29/778 , H01L29/1606 , H01L29/513
摘要： A graphene electronic device includes a multi-layered gate insulating layer between a graphene channel layer and a gate electrode. The multi-layered gate insulating layer includes an organic insulating layer and an inorganic insulating layer on the organic insulating layer.
摘要翻译：石墨烯电子器件包括在石墨烯通道层和栅电极之间的多层栅极绝缘层。多层栅绝缘层包括有机绝缘层和有机绝缘层上的无机绝缘层。

115. 发明授权

US08785912B2 Graphene electronic device including a plurality of graphene channel layers 有权
标题翻译：石墨烯电子器件包括多个石墨烯通道层
公开(公告)号：US08785912B2
公开(公告)日：2014-07-22
申请号：US13225988
申请日：2011-09-06
申请人： Hyun-jong Chung , Jae-hong Lee , Jae-ho Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
发明人： Hyun-jong Chung , Jae-hong Lee , Jae-ho Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
IPC分类号： H01L29/775 , B82Y99/00
CPC分类号： H01L29/1606 , H01L29/41733 , H01L29/66045 , H01L29/778 , H01L29/78684 , H01L29/78696
摘要： Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers.
摘要翻译：石墨烯电子器件可以包括衬底上的栅极电极，覆盖栅电极的第一栅极绝缘膜，衬底上的多个石墨烯沟道层，多个石墨烯沟道层之间的第二栅极绝缘膜，以及源电极和连接到所述多个石墨烯通道层中的每一个的两个边缘的漏电极。

116. 发明授权

US08728880B2 Graphene electronic device and method of fabricating the same 有权
标题翻译：石墨烯电子器件及其制造方法
公开(公告)号：US08728880B2
公开(公告)日：2014-05-20
申请号：US13329842
申请日：2011-12-19
申请人： Hyun-jong Chung , Jin-seong Heo , Hee-jun Yang , Sun-ae Seo , Sung-hoon Lee
发明人： Hyun-jong Chung , Jin-seong Heo , Hee-jun Yang , Sun-ae Seo , Sung-hoon Lee
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/66477 , H01L29/42384 , H01L29/775 , H01L29/78684
摘要： A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.
摘要翻译：石墨烯电子器件包括在衬底上的石墨烯通道层，石墨烯通道层的端部上的源电极和在石墨烯通道层的另一端部上的漏电极，石墨烯通道层上的栅极氧化物源电极和漏电极，栅极氧化物上的栅电极。栅极氧化物具有与源电极和漏电极之间的石墨烯沟道层基本相同的形状。

117. 发明授权

US08614014B2 Tracks including magnetic layer and magnetic memory devices comprising the same 失效
标题翻译：包含磁性层的磁迹和包括磁性层的磁存储装置
公开(公告)号：US08614014B2
公开(公告)日：2013-12-24
申请号：US12662215
申请日：2010-04-06
申请人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Jin-seong Heo , Ji-young Bae
发明人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Jin-seong Heo , Ji-young Bae
IPC分类号： G11B5/66 , G11C19/02
CPC分类号： G11B5/72 , G11B5/7325 , G11C11/14
摘要： A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (β).
摘要翻译：一种磁存储器件包括其中分别在磁性层的上表面和下表面上形成不同非磁性层的轨道。两个非磁性层中的一个包括原子序数大于或等于12的元素。因此，磁性层具有相对高的非绝热性（β）。

118. 发明授权

US08466461B2 Resistive random access memory and method of manufacturing the same 有权
标题翻译：电阻式随机存取存储器及其制造方法
公开(公告)号：US08466461B2
公开(公告)日：2013-06-18
申请号：US11987150
申请日：2007-11-28
申请人： Sun-ae Seo , Young-soo Park , Ran-ju Jung , Myoung-jae Lee , Dong-chul Kim , Seung-eon Ahn
发明人： Sun-ae Seo , Young-soo Park , Ran-ju Jung , Myoung-jae Lee , Dong-chul Kim , Seung-eon Ahn
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： H01L45/165 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/146
摘要： Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path.
摘要翻译：示例实施例涉及电阻随机存取存储器（RRAM）和制造RRAM的方法。根据示例性实施例的RRAM可以包括下电极，其可以形成在下结构（例如，衬底）上。电阻层可以形成在下电极上，其中电阻层可以包括过渡金属掺杂剂。上电极可以形成在电阻层上。因此，过渡金属掺杂剂可以在作为电流路径工作的电阻层中形成丝。

119. 发明申请

US20120256167A1 GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：石墨电子器件及其制造方法
公开(公告)号：US20120256167A1
公开(公告)日：2012-10-11
申请号：US13224941
申请日：2011-09-02
申请人： Jin-seong Heo , Hyun-jong Chung , Sun-ae Seo , Sung-hoon Lee , Hee-jun Yang
发明人： Jin-seong Heo , Hyun-jong Chung , Sun-ae Seo , Sung-hoon Lee , Hee-jun Yang
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66045 , H01L29/1606 , H01L29/401 , H01L29/66431 , H01L29/66742 , H01L29/778 , H01L29/786 , Y10S977/936
摘要： The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.
摘要翻译：石墨烯电子器件可以包括在导电衬底上的栅极氧化物，导电衬底被配置为用作栅电极，栅极氧化物上的一对第一金属，一对第一金属彼此分开，石墨烯沟道层在第一金属和第一金属之间延伸，以及在石墨烯通道层的两个边缘上的源电极和漏电极。

120. 发明授权

US08233305B2 Magnetic structures, information storage devices including magnetic structures, methods of manufacturing and methods of operating the same 失效
标题翻译：磁性结构，包括磁性结构的信息存储装置，制造方法及其操作方法
公开(公告)号：US08233305B2
公开(公告)日：2012-07-31
申请号：US12458249
申请日：2009-07-07
申请人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Ji-young Bae
发明人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Ji-young Bae
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1673 , G11C11/1675 , Y10T29/49069
摘要： A magnetic structure includes a first portion and a plurality of second portions. The first portion extends in a first direction. The plurality of second portions extend from ends of the first portion in a second direction. The first and second directions are perpendicular to one another. Two magnetic domains magnetized in directions opposite to each other and a magnetic domain wall between the magnetic domains are formed in the magnetic structure.
摘要翻译：磁性结构包括第一部分和多个第二部分。第一部分沿第一方向延伸。多个第二部分在第二方向从第一部分的端部延伸。第一和第二方向彼此垂直。在磁性结构中形成两个彼此相反方向磁化的磁畴和磁畴之间的磁畴壁。

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