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111. 发明申请

US20130053217A1 AUTOMATIC CLUTCH CONTROL APPARATUS 失效
标题翻译：自动离合器控制装置
公开(公告)号：US20130053217A1
公开(公告)日：2013-02-28
申请号：US13586264
申请日：2012-08-15
申请人： Masayuki Tanaka , Takeshige Miyazaki
发明人： Masayuki Tanaka , Takeshige Miyazaki
IPC分类号： B60W10/02
CPC分类号： F16D48/06 , F16D2021/0615 , F16D2021/0646 , F16D2500/1086 , F16D2500/50684 , F16D2500/508 , F16D2500/7044 , Y10T477/75
摘要： The clutch control apparatus includes a first reference value setting portion for setting a first engagement amount reference value of the first and the second clutches and to obtain a target transmitting torque by calculating a target inertia torque by multiplying a target rotation speed change rate of the engine at a speed change operation by an inertia of the engine and subtracting the target inertia torque from the current output torque of the engine to be the target transmitting torque of the first and the second clutches and a second reference value setting portion for setting a second engagement amount reference value by correcting the first engagement amount reference value based on the vehicle speed and the turning radius.
摘要翻译：离合器控制装置包括第一基准值设定部，用于设定第一和第二离合器的第一接合量基准值，并且通过将发动机的目标转速变化率乘以目标惯性转矩来计算目标惯性转矩，从而获得目标传递转矩在通过发动机的惯性的变速操作中，从目前的发动机的输出转矩减去目标惯性转矩，作为第一和第二离合器的目标传递转矩，以及第二基准值设定部分，用于设定第二接合通过基于车速和转弯半径校正第一接合量参考值来量化参考值。

112. 发明申请

US20110298039A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH CHARGE STORAGE LAYER IN MEMORY CELL 有权
标题翻译：在存储单元中提供充电存储层的非易失性半导体存储器件
公开(公告)号：US20110298039A1
公开(公告)日：2011-12-08
申请号：US13207149
申请日：2011-08-10
申请人： Kazuhiro Matsuo , Masayuki Tanaka , Takeo Furuhata , Koji Nakahara
发明人： Kazuhiro Matsuo , Masayuki Tanaka , Takeo Furuhata , Koji Nakahara
IPC分类号： H01L29/792 , H01L29/78
CPC分类号： H01L29/792 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/513 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7.
摘要翻译：非易失性半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘层，形成在第一绝缘层上的电荷存储层，形成在电荷存储层上的第二绝缘层和形成在第二绝缘层上的控制电极绝缘层。第二绝缘层包括在电荷存储层上形成的第一氧化硅膜，形成在第一氧化硅膜上的氮化硅膜，形成在氮化硅膜上的金属氧化物膜，以及形成在金属氧化物膜上的氮化物膜。金属氧化物膜的相对介电常数不小于7。

113. 发明申请

US20090093335A1 TRANSMISSION AND POWER TRANSMITTING SYSTEM 有权
标题翻译：传动和发电系统
公开(公告)号：US20090093335A1
公开(公告)日：2009-04-09
申请号：US12241448
申请日：2008-09-30
申请人： Yoshimitsu YOKOUCHI , Hideto Watanabe , Kunio Takeda , Masayuki Tanaka
发明人： Yoshimitsu YOKOUCHI , Hideto Watanabe , Kunio Takeda , Masayuki Tanaka
IPC分类号： F16H3/44
CPC分类号： B60W20/30 , B60K1/02 , B60K6/365 , B60K6/445 , B60K6/547 , B60W10/02 , B60W10/06 , B60W10/08 , B60W10/115 , B60W20/00 , B60W2510/244 , B60W2520/10 , B60W2540/10 , F16H3/727 , F16H2037/0866 , F16H2200/2007 , Y02T10/6239 , Y02T10/6286
摘要： A transmission includes: a plurality of rotating elements interposed between a driving source and an output portion; a rotating member that rotatably supports one of the rotating elements and is formed at a radially outer portion thereof with a plurality of recesses or protrusions; a support member having a surface, that is facing the rotating member, and a plurality of protrusions or recesses that are formed in a radially inner portion thereof and engage with the recesses or protrusions of the rotating member, the rotating member being mounted in the support member such that the rotating member is not able to rotate; and a friction producing mechanism that is provided between the rotating member and the above-indicated surface of the support member and is arranged to produce a frictional force between the rotating member and the surface of the support member.
摘要翻译：变速器包括：插入驱动源和输出部之间的多个旋转元件; 旋转构件，其可旋转地支撑所述旋转元件中的一个并且在其径向外侧部分处形成有多个凹部或突起; 具有面向旋转构件的表面的支撑构件和形成在其径向内部并与旋转构件的凹部或突起接合的多个突起或凹部，旋转构件安装在支撑件构件，使得旋转构件不能旋转; 以及摩擦产生机构，其设置在所述旋转构件和所述支撑构件的上述表面之间，并且被布置成在所述旋转构件和所述支撑构件的表面之间产生摩擦力。

114. 发明申请

US20080170377A1 MANIPULATION INPUT DEVICE AND ELECTRONIC INSTRUMENT USING THE SAME 审中-公开
标题翻译：操作输入装置和使用该装置的电子仪器
公开(公告)号：US20080170377A1
公开(公告)日：2008-07-17
申请号：US11969276
申请日：2008-01-04
申请人： Takeshi Miyasaka , Masayuki Tanaka
发明人： Takeshi Miyasaka , Masayuki Tanaka
IPC分类号： H05K7/00
CPC分类号： H01H19/005 , H01H25/041 , H01H2019/006 , H01H2025/043 , H01H2025/048
摘要： A manipulation input device includes a base, a printed-circuit board adhered to the base, a manipulation member, a pressing projection, and a manipulation dial. A plurality of push-button switches and a magnetic-field detection element are mounted on the printed-circuit board. The manipulation member has a ring-shape plate spring and a pedestal portion. The pressing projection press-contacts the push-button switch by fixing a mounting portion to an outer circumferential edge of the upper surface of the base. The pressing projection is provided toward a lower surface of the pedestal portion. The mounting portion is extended downward from an outer circumferential edge portion of the ring-shape plate spring. A ring magnet is assembled in a lower surface of the manipulation dial. N poles and S poles are alternatively arranged in the ring magnet. The manipulation dial is rotatably assembled in an upper surface of the pedestal portion.
摘要翻译：操作输入装置包括基座，粘附到基座的印刷电路板，操纵构件，按压突起和操纵拨盘。多个按钮开关和磁场检测元件安装在印刷电路板上。操作构件具有环形板簧和基座部。按压突起通过将安装部固定到基部的上表面的外周边缘而按压按钮开关。按压突起朝向基座部的下表面设置。安装部从环状板簧的外周缘部向下方延伸。环形磁铁组装在操作盘的下表面。 N极和S极交替地布置在环形磁铁中。操作盘可旋转地组装在基座部分的上表面中。

115. 发明申请

US20070134227A1 Catalyst for cleaving sugar chain 审中-公开
标题翻译：用于切割糖链的催化剂
公开(公告)号：US20070134227A1
公开(公告)日：2007-06-14
申请号：US10551550
申请日：2004-03-31
申请人： Masayuki Tanaka , Mamoru Kyogashima
发明人： Masayuki Tanaka , Mamoru Kyogashima
IPC分类号： A61K38/47 , C07H21/04 , C08B37/00 , C12N9/24 , C12P19/04 , C12P21/06
CPC分类号： C12N9/2408 , A61K38/1709
摘要： A catalyst which is capable of specifically cleaving one sugar chain or two or more sugar chains selected from the group consisting of hyaluronic acid, chondroitin sulfate A, chondroitin sulfate C and chondroitin sulfate D; a cleavage agent specific for the sugar chains; a medicament which is used for specifically cleaving the sugar chains in a living body tissue; a method for specifically cleaving the sugar chains; a method for specifically producing the sugar chain having a decreased molecular weight; and production methods for the catalyst, the cleavage agent and the medicament.
摘要翻译：一种能够特异性切割选自透明质酸，硫酸软骨素A，硫酸软骨素C和硫酸软骨素D中的一种糖链或两种或更多种糖链的催化剂; 针对糖链的切割剂; 用于特异性切割活体组织中的糖链的药物; 专门切割糖链的方法; 专门生产分子量降低的糖链的方法; 以及催化剂，裂解剂和药物的制备方法。

116. 发明授权

US07194823B2 Clothes drier 有权
标题翻译：干衣机
公开(公告)号：US07194823B2
公开(公告)日：2007-03-27
申请号：US10999945
申请日：2004-12-01
申请人： Shigeharu Nakamoto , Hidetaka Yabuuchi , Hajime Nojima , Masayuki Tanaka
发明人： Shigeharu Nakamoto , Hidetaka Yabuuchi , Hajime Nojima , Masayuki Tanaka
IPC分类号： F26B21/00 , F26B21/06
CPC分类号： D06F58/206 , D06F2058/2874
摘要： A clothes drying apparatus includes a heat pump mechanism, an air path for guiding drying air into a drying drum accommodating therein clothes, a blower for supplying drying air to the air path, and a controller for controlling a driving of a compressor, wherein the controller operates the blower and the compressor during a drying operation; stops the compressor in case the drying operation is suspended; and operates, in case the drying operation is resumed, the compressor after a certain time period has elapsed since the compressor had stopped. In case employing the heat pump mechanism having the compressor as a heat source, it is possible to reduce a load on the compressor and allow temperature of warm air to rapidly return by using the heat pump mechanism.
摘要翻译：衣物干燥装置包括热泵机构，用于将干燥空气引导到容纳衣物的干燥滚筒中的空气通道，用于向空气路径供应干燥空气的鼓风机和用于控制压缩机的驱动的控制器，其中控制器在干燥操作期间操作鼓风机和压缩机; 如果干燥操作暂停，则停止压缩机; 并且在恢复干燥操作的情况下操作，压缩机在从压缩机停止之后经过一段时间后经过。在使用具有压缩机的热泵机构作为热源的情况下，可以减少压缩机的负荷，并且通过使用热泵机构使暖空气的温度快速返回。

117. 发明授权

US07060555B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07060555B2
公开(公告)日：2006-06-13
申请号：US10895144
申请日：2004-07-21
申请人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
IPC分类号： H01L21/336
CPC分类号： H01L21/0217 , H01L21/02208 , H01L21/02211 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76826 , H01L21/76831 , H01L21/76834 , H01L21/76879 , H01L21/76897 , H01L23/485 , H01L27/10873 , H01L2924/0002 , H01L2924/00
摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

118. 发明授权

US07041584B2 Method of manufacturing semiconductor device and the semiconductor device 失效
公开(公告)号：US07041584B2
公开(公告)日：2006-05-09
申请号：US10867765
申请日：2004-06-16
申请人： Masayuki Tanaka , Kazuaki Nakajima , Yoshitaka Tsunashima , Takayuki Ito , Kyoichi Suguro
发明人： Masayuki Tanaka , Kazuaki Nakajima , Yoshitaka Tsunashima , Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L21/324 , H01L21/335
CPC分类号： H01L21/324 , H01L21/28518 , H01L21/32053 , H01L21/76843 , H01L21/76855 , H01L21/76864 , H01L21/76886 , H01L29/665
摘要： An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide layer is exposed, forming a metal nitride film on the bottom and side wall of the contact hole, carrying out a first heating process at 600° C. or lower on the substrate, carrying out, during the first heating process, a second heating process for 10 msec or shorter with light whose main wavelength is shorter than a light absorbing end of silicon, forming a contact conductor in the contact hole after the second heating process, and forming, on the insulating film, wiring that is electrically connected to the substrate through the contact conductor.

119. 发明授权

US06903422B2 Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems 失效
标题翻译：半导体集成电路，制造方法及半导体集成电路系统
公开(公告)号：US06903422B2
公开(公告)日：2005-06-07
申请号：US10609520
申请日：2003-07-01
申请人： Akira Goda , Mitsuhiro Noguchi , Masayuki Tanaka , Shigehiko Saida
发明人： Akira Goda , Mitsuhiro Noguchi , Masayuki Tanaka , Shigehiko Saida
IPC分类号： H01L27/10 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11546
摘要： A semiconductor integrated circuit is disclosed, which includes a semiconductor substrate, a memory cell formed on the semiconductor substrate and having a first gate insulating layer of a stacked structure which includes a silicon nitride layer to become a charge storage layer, and a transistor formed on the semiconductor substrate and having a second gate insulating layer. Here, source and drain diffused layers of the memory cell are covered with a part of the first gate insulating layer, and metal silicide layers are formed on surfaces of source and drain diffused layers of the transistor.
摘要翻译：公开了一种半导体集成电路，其包括半导体衬底，形成在半导体衬底上的存储单元，并且具有堆叠结构的第一栅极绝缘层，其包括形成电荷存储层的氮化硅层，以及形成在半导体衬底并具有第二栅极绝缘层。这里，存储单元的源极和漏极扩散层被第一栅极绝缘层的一部分覆盖，并且金属硅化物层形成在晶体管的源极和漏极扩散层的表面上。

120. 发明申请

US20050006696A1 Semiconductor memory 失效
标题翻译：半导体存储器
公开(公告)号：US20050006696A1
公开(公告)日：2005-01-13
申请号：US10850408
申请日：2004-05-21
申请人： Mitsuhiro Noguchi , Akira Goda , Masayuki Tanaka
发明人： Mitsuhiro Noguchi , Akira Goda , Masayuki Tanaka
IPC分类号： G11C16/04 , H01L21/8246 , H01L21/8247 , H01L27/115 , H01L27/148 , H01L29/51 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11568 , G11C16/0466 , G11C16/0483 , H01L27/115 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/792
摘要： A semiconductor memory having an electrically writable/erasable memory cell includes a first gate insulating layer made from a compound containing silicon and oxygen; a first charge-storage layer being in contact with the first gate insulating layer made from a silicon nitride film, a silicon oxynitride film, or an alumina film; a second insulating layer thicker than the first gate insulting layer; a second charge-storage layer being in contact with the second insulating layer; a third insulating layer thicker than the first gate insulating layer being in contact with the second charge-storage layer; and a control electrode upon the third insulating layer.
摘要翻译：具有电可写/可擦除存储单元的半导体存储器包括由含硅和氧的化合物制成的第一栅极绝缘层; 与由氮化硅膜，氮氧化硅膜或氧化铝膜构成的第一栅极绝缘层接触的第一电荷存储层; 比第一栅极绝缘层厚的第二绝缘层; 与第二绝缘层接触的第二电荷存储层; 比所述第一栅极绝缘层更厚的与所述第二电荷存储层接触的第三绝缘层; 以及在所述第三绝缘层上的控制电极。

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