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111. 发明申请

US20120205728A1 Semiconductor Structure and Method for Manufacturing the Same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20120205728A1
公开(公告)日：2012-08-16
申请号：US13379658
申请日：2011-02-27
申请人： Haizhou Yin , Jun Luo , Huilong Zhu , Zhijiong Luo
发明人： Haizhou Yin , Jun Luo , Huilong Zhu , Zhijiong Luo
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28518 , H01L21/28185 , H01L21/76814 , H01L29/49 , H01L29/517 , H01L29/66492 , H01L29/66545 , H01L29/7833
摘要： The present invention provides a method for manufacturing a semiconductor structure, comprising: providing a substrate, and forming a dummy gate stack on the substrate, sidewall spacers on sidewalls of the dummy gate stack, and source/drain regions at both sides of the dummy gate stack, wherein the dummy gate stack comprising a dummy gate; forming a first contact layer on surfaces of the source/drain regions; forming an interlayer dielectric layer to cover the first contact layer; removing the dummy gate or the dummy gate stack material to form an opening, filling the opening with a first conductive material or with a gate dielectric layer and a first conductive material to form a gate stack structure; forming through holes within the interlayer dielectric layer, so that a portion of the first contact layer or a portion of the first contact layer and the source/drain regions are exposed in the through holes; forming a second contact layer on the exposed portions of the regions; filling the through holes with a second conductive material to form contact vias. Besides, the present invention further provides a semiconductor structure, which is favorable for reducing the contact resistance.
摘要翻译：本发明提供一种制造半导体结构的方法，包括：提供衬底，在衬底上形成虚设栅极叠层，在虚拟栅极堆叠的侧壁上形成侧壁间隔物，以及虚拟栅极两侧的源极/漏极区域堆叠，其中所述伪栅极堆叠包括虚拟栅极; 在所述源/漏区的表面上形成第一接触层; 形成层间电介质层以覆盖所述第一接触层; 去除伪栅极或虚拟栅极堆叠材料以形成开口，用第一导电材料或栅极电介质层和第一导电材料填充开口以形成栅极堆叠结构; 在所述层间电介质层内形成通孔，使得所述第一接触层的一部分或所述第一接触层的一部分和所述源/漏区在所述通孔中露出; 在所述区域的所述暴露部分上形成第二接触层; 用第二导电材料填充通孔以形成接触孔。此外，本发明还提供了有利于降低接触电阻的半导体结构。

112. 发明授权

US08232178B2 Method for forming a semiconductor device with stressed trench isolation 有权
标题翻译：用于形成具有应力沟槽隔离的半导体器件的方法
公开(公告)号：US08232178B2
公开(公告)日：2012-07-31
申请号：US13201371
申请日：2011-01-27
申请人： Haizhou Yin , Zhijiong Luo , Huilong Zhu
发明人： Haizhou Yin , Zhijiong Luo , Huilong Zhu
IPC分类号： H01L21/76
CPC分类号： H01L29/045 , H01L21/76224 , H01L21/823807 , H01L21/823878 , H01L29/7846
摘要： A method for forming a semiconductor device with stressed trench isolation is provided, comprising: providing a silicon substrate (S11); forming at least two first trenches in parallel on the silicon substrate and forming a first dielectric layer which is under tensile stress in the first trenches (S12); forming at least two second trenches, which have an extension direction perpendicular to that of the first trenches, in parallel on the silicon substrate, and forming a second dielectric layer in the second trenches (S13); and after forming the first trenches, forming a gate stack on a part of the silicon substrate between two adjacent first trenches, wherein the channel length direction under the gate stack is parallel to the extension direction of the first trenches (S14). The present invention supply tensile stress in the channel width direction of a MOS transistor, so as to improve performance of PMOS and/or NMOS transistors.
摘要翻译：提供一种用于形成具有应力沟槽隔离的半导体器件的方法，包括：提供硅衬底（S11）; 在所述硅衬底上平行地形成至少两个第一沟槽，并形成在所述第一沟槽中处于拉伸应力的第一介电层（S12）; 在所述硅衬底上形成平行于所述硅衬底的至少两个具有与所述第一沟槽的延伸方向垂直的第二沟槽，以及在所述第二沟槽中形成第二电介质层（S13）。并且在形成第一沟槽之后，在两个相邻的第一沟槽之间的硅衬底的一部分上形成栅极叠层，其中栅叠层下方的沟道长度方向平行于第一沟槽的延伸方向（S14）。本发明在MOS晶体管的沟道宽度方向上提供拉伸应力，以提高PMOS和/或NMOS晶体管的性能。

113. 发明申请

US20120187543A1 SUBSTRATE STRIP PLATE STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：用于半导体器件的衬底条板结构及其制造方法
公开(公告)号：US20120187543A1
公开(公告)日：2012-07-26
申请号：US13355946
申请日：2012-01-23
申请人： HUILONG ZHU , Zhijiong Luo , Haizhou Yin
发明人： HUILONG ZHU , Zhijiong Luo , Haizhou Yin
IPC分类号： H01L23/52 , H01L21/768
CPC分类号： H01L27/1218
摘要： The present invention provides a strip plate structure and a method for manufacturing the same. The strip plate structure comprises a strip plate array, which comprises a plurality of strip plates arranged with spacing in a predetermined direction on a same plane, wherein each of the strip plates has a first surface and a second surface opposite to the first surface and the strip plate array is arranged on a plane parallel to the first surface of the strip plates; a plurality of strip sheets which connect neighboring ones of the strip plates; flexible material layers, which are located on at least a portion of the surfaces of the strip sheets and/or on at least a portion of the surfaces of the strip plates.
摘要翻译：本发明提供一种带状板结构及其制造方法。带状板结构包括条板阵列，其包括在同一平面上以预定方向间隔布置的多个带状板，其中每个带状板具有第一表面和与第一表面相对的第二表面，带板阵列布置在平行于带状板的第一表面的平面上; 多个带状片，其连接相邻的条板; 柔性材料层位于带状片的至少一部分表面上和/或在带状板的至少一部分表面上。

114. 发明申请

US20120187418A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体结构及其制造方法
公开(公告)号：US20120187418A1
公开(公告)日：2012-07-26
申请号：US13380964
申请日：2011-03-04
申请人： Haizhou Yin , Zhijiong Luo , Huilong Zhu
发明人： Haizhou Yin , Zhijiong Luo , Huilong Zhu
IPC分类号： H01L29/04 , H01L21/20 , H01L29/36 , H01L29/24 , H01L29/20
CPC分类号： H01L29/785 , H01L29/045
摘要： The present application provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises a semiconductor substrate, a semiconductor fin located on the semiconductor substrate, and an etch stop layer located between the semiconductor substrate and the semiconductor fin, wherein a lateral sidewall of the semiconductor fin is substantially on the Si {111} crystal plane. Since the semiconductor fin exhibits better surface quality and less crystal defects, it is favorable for manufacturing FINFET.
摘要翻译：本申请提供了一种半导体结构及其制造方法。所述半导体结构包括半导体衬底，位于所述半导体衬底上的半导体鳍片，以及位于所述半导体衬底和所述半导体鳍片之间的蚀刻停止层，其中所述半导体鳍片的横向侧壁基本上位于所述Si {111}晶面上。由于半导体鳍具有更好的表面质量和更少的晶体缺陷，因此有利于制造FINFET。

115. 发明申请

US20120104466A1 METHOD FOR FABRICATING CONTACT ELECTRODE AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造接触电极和半导体器件的方法
公开(公告)号：US20120104466A1
公开(公告)日：2012-05-03
申请号：US13129075
申请日：2011-02-24
申请人： Huilong Zhu , Haizhou Yin , Zhijiong Luo
发明人： Huilong Zhu , Haizhou Yin , Zhijiong Luo
IPC分类号： H01L29/772 , H01L21/768
CPC分类号： H01L23/485 , H01L29/41775 , H01L29/6659 , H01L29/66628 , H01L29/7834 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a semiconductor device comprising: a substrate; a gate, which is formed on the substrate; a source and a drain, which are located on opposite sides of the gate, respectively; a contact, which contacts with the source and/or the drain, wherein the contact has an enlarged end at an end which is in contact with the source and/or the drain. In the present invention, since the contact area of the contact is increased on the interface in contact with the source/the drain, the contact resistance can be reduced, and thus the performances of the semiconductor device can be guaranteed/improved. The present invention further provides a method of fabricating the semiconductor device (especially the contact therein) as previously described.
摘要翻译：本发明提供了一种半导体器件，包括：衬底; 形成在基板上的栅极; 源极和漏极分别位于栅极的相对侧上; 接触件，其与源极和/或漏极接触，其中接触件在与源极和/或漏极接触的端部处具有扩大的端部。在本发明中，由于在与源极/漏极接触的界面上接触面的接触面积增加，所以可以降低接触电阻，能够保证/提高半导体器件的性能。本发明还提供如前所述制造半导体器件（特别是其中的接触）的方法。

116. 发明申请

US20120080722A1 METHOD FOR FORMING STRAINED SEMICONDUCTOR CHANNEL AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成应变半导体通道和半导体器件的方法
公开(公告)号：US20120080722A1
公开(公告)日：2012-04-05
申请号：US13128931
申请日：2011-02-25
申请人： Haizhou Yin , Zhijiong Luo , Huilong Zhu
发明人： Haizhou Yin , Zhijiong Luo , Huilong Zhu
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823842 , H01L29/1054 , H01L29/517 , H01L29/66545 , H01L29/66651
摘要： A semiconductor device includes: a semiconductor substrate; a SiGe relaxed layer on the semiconductor substrate; an NMOS transistor on the SiGe relaxed layer; and a PMOS transistor on the SiGe relaxed layer, in which the NMOS transistor includes a tensile strained epitaxial layer located on the SiGe relaxed layer or embedded in the SiGe relaxed layer; and the PMOS transistor includes a compressive strained epitaxial layer located on the SiGe relaxed layer or embedded in the SiGe relaxed layer. The loss of the strained semiconductor material can be avoided and meanwhile the stress in the channel can be better maintained.
摘要翻译：半导体器件包括：半导体衬底; 半导体衬底上的SiGe弛豫层; SiGe弛豫层上的NMOS晶体管; 以及SiGe弛豫层上的PMOS晶体管，其中NMOS晶体管包括位于SiGe弛豫层上或嵌入SiGe弛豫层中的拉伸应变外延层; 并且PMOS晶体管包括位于SiGe松弛层上或嵌入SiGe弛豫层中的压缩应变外延层。可以避免应变半导体材料的损失，同时可以更好地保持通道中的应力。

117. 发明申请

US20120037211A1 Thin Film of Solar Battery Structure, Thin Film of Solar Array and Manufacturing Method Thereof 审中-公开
标题翻译：太阳能电池结构薄膜，太阳能阵列薄膜及其制造方法
公开(公告)号：US20120037211A1
公开(公告)日：2012-02-16
申请号：US13264126
申请日：2010-04-14
申请人： Huilong Zhu , Zhijiong Luo , Haizhou Yin
发明人： Huilong Zhu , Zhijiong Luo , Haizhou Yin
IPC分类号： H01L31/0376 , H01L27/142 , H01L31/18
CPC分类号： H01L31/0392 , H01L31/035281 , Y02E10/50
摘要： The present invention proposes a thin-film solar cell structure, a method for manufacturing the same and a thin-film solar cell array. The method for manufacturing thin-film solar cell structures comprises: forming at least two first trenches through a first surface into said semiconductor substrate, forming at least one second trench through a second surface into said semiconductor substrate, said second trench located between two neighboring said first trenches; forming a first structure on sidewalls of each of said first trenches; to forming a second structure on sidewalls of each of said second trench; and cutting or stretching said semiconductor substrate to form thin-film solar cell structures. The distance between the electrodes can be effectively shortened through the present invention such that the recombination rate between the electrons and the holes can be reduced and the bulk recombination current and the surface recombination current can be reduced to achieve the objective of improving power generation efficiency. The thin-film solar cell structure and the method for manufacturing the same proposed in the present invention can also save semiconductor material and reduce production cost.
摘要翻译：本发明提出一种薄膜太阳能电池结构体及其制造方法以及薄膜太阳能电池阵列。制造薄膜太阳能电池结构的方法包括：通过第一表面形成至少两个第一沟槽到所述半导体衬底中，通过第二表面形成至少一个第二沟槽到所述半导体衬底中，所述第二沟槽位于两个相邻的所述第一壕沟在每个所述第一沟槽的侧壁上形成第一结构; 以在每个所述第二沟槽的侧壁上形成第二结构; 以及切割或拉伸所述半导体衬底以形成薄膜太阳能电池结构。通过本发明可以有效地缩短电极之间的距离，从而可以减小电子和空穴之间的复合速率，并且可以减小体积复合电流和表面复合电流，以达到提高发电效率的目的。本发明中提出的薄膜太阳能电池结构及其制造方法也可以节省半导体材料并降低生产成本。

118. 发明申请

US20120032230A1 METHOD OF FORMING STRAINED SEMICONDUCTOR CHANNEL AND SEMICONDUCTOR DEVICE 有权
标题翻译：形成应变半导体通道和半导体器件的方法
公开(公告)号：US20120032230A1
公开(公告)日：2012-02-09
申请号：US13059285
申请日：2010-09-19
申请人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
发明人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
IPC分类号： H01L29/78 , H01L21/20 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/66651 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L29/1054 , H01L29/517 , H01L29/66545
摘要： The present invention provides a method of forming a strained semiconductor channel, comprising: forming a relaxed SiGe layer on a semiconductor substrate; forming a dielectric layer on the relaxed SiGe layer and forming a sacrificial gate on the dielectric layer, wherein the dielectric layer and the sacrificial gate form a sacrificial gate structure; depositing an interlayer dielectric layer, which is planarized to expose the sacrificial gate; etching to remove the sacrificial gate and the dielectric layer to form an opening; forming a semiconductor epitaxial layer by selective semiconductor epitaxial growth in the opening; depositing a high-K dielectric layer and a metal layer; and removing the high-K dielectric layer and metal layer covering the interlayer dielectric layer by planarizing the deposited metal layer and high-K dielectric layer to form a metal gate. The present invention also provides a semiconductor device manufactured by this process.
摘要翻译：本发明提供一种形成应变半导体沟道的方法，包括：在半导体衬底上形成松弛的SiGe层; 在弛豫的SiGe层上形成电介质层，并在电介质层上形成牺牲栅极，其中电介质层和牺牲栅极形成牺牲栅极结构; 沉积层间电介质层，其被平坦化以暴露所述牺牲栅极; 蚀刻去除牺牲栅极和电介质层以形成开口; 通过开口中的选择性半导体外延生长形成半导体外延层; 沉积高K电介质层和金属层; 并且通过平坦化沉积的金属层和高K电介质层来去除覆盖层间电介质层的高K电介质层和金属层，以形成金属栅极。本发明还提供了通过该方法制造的半导体器件。

119. 发明申请

US20110260264A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110260264A1
公开(公告)日：2011-10-27
申请号：US12937321
申请日：2010-06-28
申请人： Zhijiong Luo , Haizhou Yin , Huilong Zhu
发明人： Zhijiong Luo , Haizhou Yin , Huilong Zhu
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L21/823835 , H01L21/823814 , H01L21/823871 , H01L29/4966 , H01L29/665 , H01L29/66545 , H01L29/6656
摘要： There is provided a semiconductor device and a method of fabricating the same. The method of fabricating a semiconductor device according to the present invention comprises: forming a transistor structure including a gate, and source and drain regions on a semiconductor substrate; carrying out a first silicidation to form a first metal silicide layer on the source and drain regions; depositing a first dielectric layer on the substrate, the top of the first dielectric layer being flush with the top of the gate region; forming contact holes at the portions corresponding to the source and drain regions in the first dielectric layer; and carrying out a second silicidation to form a second metal silicide at the gate region and in the contact holes, wherein the first metal silicide layer is formed to prevent silicidation from occurring at the source and drain regions during the second silicidation. According to the present invention, it is possible not only to reduce the gate resistance, but also to eliminate difficulties in forming contact holes by RIE at the gate and source/drain regions.
摘要翻译：提供了一种半导体器件及其制造方法。根据本发明的制造半导体器件的方法包括：在半导体衬底上形成包括栅极和源极和漏极区域的晶体管结构; 进行第一硅化，以在源区和漏区上形成第一金属硅化物层; 在所述衬底上沉积第一介电层，所述第一介电层的顶部与所述栅极区的顶部齐平; 在与第一电介质层中的源极和漏极区对应的部分处形成接触孔; 并且在所述栅极区和所述接触孔中进行第二硅化以形成第二金属硅化物，其中形成所述第一金属硅化物层以防止在所述第二硅化期间在所述源极和漏极区发生硅化。根据本发明，不仅可以降低栅极电阻，而且可以消除在栅极和源极/漏极区域通过RIE形成接触孔的困难。

120. 发明申请

US20110260262A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110260262A1
公开(公告)日：2011-10-27
申请号：US12999796
申请日：2010-09-17
申请人： Haizhou Yin , Zhijiong Luo , Huilong Zhu
发明人： Haizhou Yin , Zhijiong Luo , Huilong Zhu
IPC分类号： H01L27/088 , H01L21/8232
CPC分类号： H01L21/823468 , H01L21/76895 , H01L21/76897 , H01L21/823425 , H01L21/823475
摘要： A semiconductor device includes a semiconductor substrate; gates, spacers on both sides of the respective gates, and source and gain regions on both sides of the respective spacers, which are formed on the semiconductor substrate; lower contacts located on the respective source and gain regions and abutting outer-sidewalls of the spacers, with bottoms covering at least a portion of the respective source and gain regions; an inter-layer dielectric layer formed on the gates, the spacers, the source and gain regions, and the lower contacts, wherein the respective source and gain regions of each of the transistor structures are isolated from each other by the inter-layer dielectric layer; and upper contacts formed in the inter-layer dielectric layer and corresponding to the lower contacts. Methods for fabricating such a semiconductor device and for manufacturing contacts for semiconductor devices.
摘要翻译：半导体器件包括半导体衬底; 各个栅极的两侧的栅极，间隔物，以及形成在半导体衬底上的各个间隔物的两侧的源极和增益区域; 下部触点位于相应的源极和增益区域以及邻接的间隔物的外侧壁上，底部覆盖相应的源极和增益区域的至少一部分; 形成在栅极，间隔物，源极和增益区域以及下部触点上的层间电介质层，其中每个晶体管结构的各个源极和增益区域通过层间电介质层彼此隔离 ; 以及形成在层间电介质层中并对应于下触点的上触点。用于制造这种半导体器件和用于制造用于半导体器件的触点的方法。

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