专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明申请

US20110254159A1 CONDUCTIVE FEATURE FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURE 有权
标题翻译：半导体基板的导电特性及其制造方法
公开(公告)号：US20110254159A1
公开(公告)日：2011-10-20
申请号：US12761641
申请日：2010-04-16
申请人： Chien Ling HWANG , Yi-Wen WU , Chung-Shi LIU
发明人： Chien Ling HWANG , Yi-Wen WU , Chung-Shi LIU
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/05 , H01L23/3192 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03464 , H01L2224/03831 , H01L2224/03912 , H01L2224/0401 , H01L2224/05558 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13147 , H01L2924/0002 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0105 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要： An embodiment of the disclosure includes a conductive feature on a semiconductor die. A substrate is provided. A bond pad is formed over the substrate. The bond pad has a first width. A polyimide layer is formed over the substrate and the bond pad. The polyimide layer has a first opening over the bond pad with a second width. A silicon-based protection layer overlies the polyimide layer. The silicon-based protection layer has a second opening over the bond pad with a third width. The first opening and the second opening form a combined opening having sidewalls to expose a portion of the bond pad. A UBM layer is formed over the sidewalls of combined opening to contact the exposed portion of the bond pad. A conductive feature overlies the UBM layer.
摘要翻译：本公开的实施例包括半导体管芯上的导电特征。提供基板。在衬底上形成接合焊盘。接合垫具有第一宽度。在衬底和接合焊盘上形成聚酰亚胺层。聚酰亚胺层在接合焊盘上具有第二宽度的第一开口。硅基保护层覆盖聚酰亚胺层。硅基保护层在接合焊盘上具有第三宽度的第二开口。第一开口和第二开口形成具有侧壁以暴露接合垫的一部分的组合开口。 UBM层形成在组合开口的侧壁上，以与接合焊盘的暴露部分接触。导电特征覆盖在UBM层上。

112. 发明申请

US20110233761A1 CU PILLAR BUMP WITH NON-METAL SIDEWALL PROTECTION STRUCTURE 有权
标题翻译： CU带非金属防护结构的衬垫
公开(公告)号：US20110233761A1
公开(公告)日：2011-09-29
申请号：US12730411
申请日：2010-03-24
申请人： Chien Ling Hwang , Yi-Wen Wu , Chun-Chieh Wang , Chung-Shi Liu
发明人： Chien Ling Hwang , Yi-Wen Wu , Chun-Chieh Wang , Chung-Shi Liu
IPC分类号： H01L23/50
CPC分类号： H01L21/76885 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/023 , H01L2224/0345 , H01L2224/0361 , H01L2224/03614 , H01L2224/03901 , H01L2224/03912 , H01L2224/0401 , H01L2224/05016 , H01L2224/05024 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05578 , H01L2224/05647 , H01L2224/0569 , H01L2224/10126 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11614 , H01L2224/1182 , H01L2224/11827 , H01L2224/11849 , H01L2224/11901 , H01L2224/11912 , H01L2224/13099 , H01L2224/13147 , H01L2224/13561 , H01L2224/13562 , H01L2224/13564 , H01L2224/13565 , H01L2224/13582 , H01L2224/13583 , H01L2224/13609 , H01L2224/13611 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13664 , H01L2224/1369 , H01L2224/16238 , H01L2224/81024 , H01L2224/81191 , H01L2224/814 , H01L2224/81411 , H01L2224/81413 , H01L2224/81416 , H01L2224/81439 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/206 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/01028 , H01L2924/01022 , H01L2924/01046 , H01L2924/01083 , H01L2924/01051 , H01L2924/00
摘要： Sidewall protection processes are provided for Cu pillar bump technology, in which a protection structure on the sidewalls of the Cu pillar bump is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.
摘要翻译：提供了用于Cu柱凸点技术的侧壁保护工艺，其中Cu柱凸起的侧壁上的保护结构由非金属材料层，例如电介质材料层，聚合物材料层或聚合物材料层中的至少一个形成其组合。

113. 发明申请

US20110101527A1 MECHANISMS FOR FORMING COPPER PILLAR BUMPS 有权
标题翻译：形成铜支柱的机理
公开(公告)号：US20110101527A1
公开(公告)日：2011-05-05
申请号：US12846353
申请日：2010-07-29
申请人： Ming-Da CHENG , Wen-Hsiung LU , Chih-Wei LIN , Ching-Wen CHEN , Yi-Wen WU , Chia-Tung CHANG , Ming-Che HO , Chung-Shi LIU
发明人： Ming-Da CHENG , Wen-Hsiung LU , Chih-Wei LIN , Ching-Wen CHEN , Yi-Wen WU , Chia-Tung CHANG , Ming-Che HO , Chung-Shi LIU
IPC分类号： H01L23/498 , H01L21/60
CPC分类号： H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/10145 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/11827 , H01L2224/13006 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16507 , H01L2224/81191 , H01L2224/81815 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/3651 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/05 , H01L2924/00012 , H01L2924/01083 , H01L2924/00 , H01L2224/05552
摘要： The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.
摘要翻译：上述形成金属凸块结构的机构解决了基板上的导电层与连接到导电层的金属凸块之间的分层问题。导电层可以是金属焊盘，后钝化互连（PPI）层或顶层金属层。通过在导电层（或基底导电层）上进行保护性导电层的原位沉积，金属凸块的凸块下金属（UBM）层更好地粘附到导电层并减少界面分层的发生。在一些实施例中，可以去除UBM层中的铜扩散阻挡子层。在一些其它实施例中，如果通过非电镀工艺沉积金属凸块并且金属凸块不是由铜制成的，则不需要UBM层。

114. 发明申请

US20110092064A1 Preventing UBM Oxidation in Bump Formation Processes 有权
标题翻译：防止在Bump形成过程中的UBM氧化
公开(公告)号：US20110092064A1
公开(公告)日：2011-04-21
申请号：US12842617
申请日：2010-07-23
申请人： Chung-Shi Liu , Cheng-Chung Lin , Ming-Che Ho , Kuo Cheng Lin , Meng-Wei Chou
发明人： Chung-Shi Liu , Cheng-Chung Lin , Ming-Che Ho , Kuo Cheng Lin , Meng-Wei Chou
IPC分类号： H01L21/3205
CPC分类号： H01L24/05 , H01L21/0206 , H01L21/02068 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/0381 , H01L2224/0401 , H01L2224/05027 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05568 , H01L2224/05573 , H01L2224/05655 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/81022 , H01L2224/94 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/00014 , H01L2224/11 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
摘要： A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer.
摘要翻译：形成集成电路结构的方法包括在晶片上形成含铜晶种层，并在含铜种子层的暴露表面上进行除氧步骤。除氧步骤使用包括氟和氧的工艺气体进行。然后使用含氮气体在含铜种子层的暴露表面上进行还原/吹扫步骤。含铜层镀在含铜种子层上。

115. 发明申请

US20110074038A1 METHODS FOR FORMING INTERCONNECT STRUCTURES THAT INCLUDE FORMING AIR GAPS BETWEEN CONDUCTIVE STRUCTURES 有权
标题翻译：形成互连结构的方法，包括在导电结构之间形成空气GAPS
公开(公告)号：US20110074038A1
公开(公告)日：2011-03-31
申请号：US12965078
申请日：2010-12-10
申请人： Chung-Shi Liu , Chen-Hua Yu
发明人： Chung-Shi Liu , Chen-Hua Yu
IPC分类号： H01L23/52
CPC分类号： H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L21/76831 , H01L21/76832 , H01L21/76849 , H01L21/76867
摘要： A method for forming a semiconductor structure includes forming a sacrificial layer over a substrate. A first dielectric layer is formed over the sacrificial layer. A plurality of conductive structures are formed within the sacrificial layer and the first dielectric layer. The sacrificial layer is treated through the first dielectric layer, at least partially removing the sacrificial layer and forming at least one air gap between two of the conductive structures. A surface of the first dielectric layer is treated, forming a second dielectric layer over the first dielectric layer, after the formation of the air gap. A third dielectric layer is formed over the second dielectric layer. At least one opening is formed within the third dielectric layer such that the second dielectric layer substantially protects the first dielectric layer from damage by the step of forming the opening.
摘要翻译：一种用于形成半导体结构的方法包括在衬底上形成牺牲层。在牺牲层上形成第一介电层。在牺牲层和第一介电层内形成多个导电结构。牺牲层通过第一介电层进行处理，至少部分去除牺牲层并在两个导电结构之间形成至少一个气隙。处理第一电介质层的表面，在形成气隙之后在第一介电层上形成第二电介质层。在第二电介质层上形成第三电介质层。至少一个开口形成在第三电介质层内，使得第二电介质层基本上保护第一电介质层不受形成开口的步骤的损害。

116. 发明申请

US20110062580A1 PROTECTION LAYER FOR PREVENTING UBM LAYER FROM CHEMICAL ATTACK AND OXIDATION 有权
标题翻译：用于防止化学反应和氧化的UBM层的保护层
公开(公告)号：US20110062580A1
公开(公告)日：2011-03-17
申请号：US12786818
申请日：2010-05-25
申请人： Chung-Shi LIU , Chien Ling HWANG , Ming-Che HO
发明人： Chung-Shi LIU , Chien Ling HWANG , Ming-Che HO
IPC分类号： H01L23/498
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05147 , H01L2224/05166 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13084 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1357 , H01L2224/13611 , H01L2224/16507 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2224/13099 , H01L2924/01083 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
摘要： A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.
摘要翻译：在凸块式冶金（UBM）层上形成由CuGeyNz层，CuSixNz层，CuSixGeyNz层或其组合形成的保护层，用于防止UBM层在后续工艺中发生化学侵蚀和氧化。

117. 发明申请

US20110049705A1 SELF-ALIGNED PROTECTION LAYER FOR COPPER POST STRUCTURE 有权
标题翻译：自适应保护层用于铜后置结构
公开(公告)号：US20110049705A1
公开(公告)日：2011-03-03
申请号：US12786698
申请日：2010-05-25
申请人： Chung-Shi LIU , Chen-Hua YU
发明人： Chung-Shi LIU , Chen-Hua YU
IPC分类号： H01L23/498
CPC分类号： H01L23/53228 , H01L23/53238 , H01L24/10 , H01L24/11 , H01L24/13 , H01L2224/0231 , H01L2224/0236 , H01L2224/024 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05647 , H01L2224/05666 , H01L2224/11 , H01L2224/1147 , H01L2224/13 , H01L2224/13099 , H01L2224/13147 , H01L2224/13609 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , H01L2924/00 , H01L2924/00014 , H01L2924/013 , H01L2924/01028 , H01L2924/0105
摘要： A copper post is formed in a passivation layer to electrically connect an underlying bond pad region, and extends to protrude from the passivation layer. A protection layer is formed on a sidewall surface or a top surface of the copper post in a self-aligned manner. The protection layer is a manganese-containing oxide layer, a manganese-containing nitride layer or a manganese-containing oxynitride layer.
摘要翻译：铜柱形成在钝化层中以电连接下面的焊盘区域，并且延伸到从钝化层突出。保护层以自对准方式形成在铜柱的侧壁表面或顶表面上。保护层是含锰氧化物层，含锰氮化物层或含锰氮氧化物层。

118. 发明授权

US07871923B2 Self-aligned air-gap in interconnect structures 有权
标题翻译：互连结构中的自对准气隙
公开(公告)号：US07871923B2
公开(公告)日：2011-01-18
申请号：US11698565
申请日：2007-01-26
申请人： Chung-Shi Liu , Chen-Hua Yu
发明人： Chung-Shi Liu , Chen-Hua Yu
IPC分类号： H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76807 , H01L21/76814 , H01L21/76826 , H01L21/76831 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit structure comprising an air gap and methods for forming the same are provided. The integrated circuit structure includes a conductive line; a self-aligned dielectric layer on a sidewall of the conductive line; an air-gap horizontally adjoining the self-aligned dielectric layer; a low-k dielectric layer horizontally adjoining the air-gap; and a dielectric layer on the air-gap and the low-k dielectric layer.
摘要翻译：提供一种包括气隙的集成电路结构及其形成方法。集成电路结构包括导线; 在导电线的侧壁上的自对准电介质层; 水平地邻接所述自对准介电层的气隙; 水平地邻接气隙的低k电介质层; 以及气隙和低k电介质层上的电介质层。

119. 发明申请

US20090191705A1 Semiconductor Contact Barrier 有权
标题翻译：半导体接触屏障
公开(公告)号：US20090191705A1
公开(公告)日：2009-07-30
申请号：US12019396
申请日：2008-01-24
申请人： Chung-Shi Liu , Chen-Hua Yu
发明人： Chung-Shi Liu , Chen-Hua Yu
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/76846 , H01L21/76856 , H01L23/485 , H01L29/665 , H01L29/7833
摘要： System and method for reducing contact resistance and improving barrier properties is provided. An embodiment comprises a dielectric layer and contacts extending through the dielectric layer to connect to conductive regions. A contact barrier layer is formed between the conductive regions and the contacts by electroless plating the conductive regions after openings have been formed through the dielectric layer for the contact. The contact barrier layer is then treated to fill the grain boundary of the contact barrier layer, thereby improving the contact resistance. In another embodiment, the contact barrier layer is formed on the conductive regions by electroless plating prior to the formation of the dielectric layer.
摘要翻译：提供了降低接触电阻和改善阻隔性能的系统和方法。一个实施例包括介电层和延伸穿过电介质层的连接到导电区域的触点。在通过用于接触的电介质层形成开口之后，在导电区域和触点之间通过无电解电镀导电区域形成接触阻挡层。然后处理接触阻挡层以填充接触阻挡层的晶界，从而提高接触电阻。在另一个实施例中，接触阻挡层通过在形成电介质层之前的无电镀形成在导电区上。

120. 发明授权

US07285853B2 Multilayer anti-reflective coating for semiconductor lithography and the method for forming the same 有权
标题翻译：用于半导体光刻的多层抗反射涂层及其形成方法
公开(公告)号：US07285853B2
公开(公告)日：2007-10-23
申请号：US11059842
申请日：2005-02-17
申请人： Chung-Shi Liu
发明人： Chung-Shi Liu
IPC分类号： H01L23/48
CPC分类号： G03F7/091 , H01L21/0276
摘要： An interconnect structure has a dielectric layer having a dielectric constant less than 3.9 overlying a substrate with a conductive region, a silicon oxycarbide layer overlying the dielectric layer, and a silicon oxynitride layer overlying the silicon oxycarbide layer. A conductive layer is inlaid the silicon oxynitride layer, the silicon oxycarbide layer and the dielectric layer to electrically connect to the conductive region.
摘要翻译：互连结构具有覆盖在具有导电区域的衬底上的介电常数小于3.9的电介质层，覆盖在电介质层上的碳氧化硅层和覆盖在硅碳氧化物层上的氧氮化硅层。导电层镶嵌氮氧化硅层，碳氧化硅层和电介质层，以电连接到导电区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式