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101. 发明授权

US09029889B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US09029889B2
公开(公告)日：2015-05-12
申请号：US13340661
申请日：2011-12-29
申请人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L33/22 , H01L33/44 , H01L33/38 , H01L33/40
CPC分类号： H01L33/22 , H01L33/382 , H01L33/405
摘要： A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light extraction surface of the LED. The first electrode is electrically connected with the first semiconductor layer. The second electrode electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light extraction surface of LED, the number of the three-dimensional nano-structures are aligned side by side, and a cross section of each three-dimensional nano-structure is M-shaped.
摘要翻译：提供发光二极管。发光二极管包括第一半导体层，有源层，第二半导体层，第一电极和第二电极。有源层夹在第一半导体层和第二半导体层之间，并且远离有源层的第二半导体层的表面是LED的光提取表面。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。在LED的光提取面上形成多个三维纳米结构，三维纳米结构的数量并排排列，每个三维纳米结构的截面为M- 成形。

102. 发明授权

US08864927B2 Method for making carbon nanotube film 有权
标题翻译：制造碳纳米管膜的方法
公开(公告)号：US08864927B2
公开(公告)日：2014-10-21
申请号：US12840408
申请日：2010-07-21
申请人： Gang Zheng , Qun-Qing Li , Jing Xie , Shou-Shan Fan
发明人： Gang Zheng , Qun-Qing Li , Jing Xie , Shou-Shan Fan
IPC分类号： B32B37/02 , B32B37/10 , B32B37/14 , B32B37/24 , H01L51/00 , C23C16/01 , B82Y40/00 , B82Y10/00 , C23C16/26 , B82Y30/00 , C01B31/02 , B32B38/10 , B32B38/18 , H01L51/05
CPC分类号： H01L51/0013 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/16 , C23C16/01 , C23C16/26 , H01L51/0048 , H01L51/0508
摘要： A method for making a carbon nanotube film is provided. First, a carbon nanotube array is formed on a grown substrate. The carbon nanotube array is pressed with a first substrate using a first pressing force to form a carbon nanotube film precursor. Then the first substrate and the grown substrate are separated, and the carbon nanotube film precursor is transferred onto the first substrate. After that, the carbon nanotube film precursor is pressed using a second substrate with a second pressing force. Lastly, the first substrate and the second substrate is separated, with part of the carbon nanotube precursor transferred to the second substrate to form the carbon nanotube film.
摘要翻译：提供一种制造碳纳米管膜的方法。首先，在生长的基板上形成碳纳米管阵列。碳纳米管阵列利用第一压力用第一衬底压制以形成碳纳米管膜前体。然后分离第一衬底和生长的衬底，并将碳纳米管膜前体转移到第一衬底上。之后，使用具有第二按压力的第二基板来压制碳纳米管膜前体。最后，分离第一基板和第二基板，一部分碳纳米管前体转移到第二基板上以形成碳纳米管膜。

103. 发明授权

US08815398B2 Carbon nanotube film 有权
标题翻译：碳纳米管膜
公开(公告)号：US08815398B2
公开(公告)日：2014-08-26
申请号：US12583391
申请日：2009-08-20
申请人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
发明人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
IPC分类号： B32B9/00
CPC分类号： G06F3/045 , B82Y30/00 , Y10T428/26 , Y10T428/30
摘要： A carbon nanotube film includes a plurality of first carbon nanotubes and a plurality of second carbon nanotubes. The first carbon nanotubes are orientated primarily along a same direction. The second carbon nanotubes have different orientations from that of the plurality of first carbon nanotubes. Each of at least one portion of the second carbon nanotubes contacts with at least two adjacent first carbon nanotubes.
摘要翻译：碳纳米管膜包括多个第一碳纳米管和多个第二碳纳米管。第一碳纳米管主要沿相同的方向取向。第二碳纳米管具有与多个第一碳纳米管不同的取向。第二碳纳米管的至少一部分中的每一个与至少两个相邻的第一碳纳米管接触。

104. 发明授权

US08785955B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08785955B2
公开(公告)日：2014-07-22
申请号：US13477273
申请日：2012-05-22
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/32
摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
摘要翻译：提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面是M形的。

105. 发明授权

US08785221B2 Method for making light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08785221B2
公开(公告)日：2014-07-22
申请号：US13479234
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/005 , H01L33/24
摘要： A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.
摘要翻译：提供一种制造发光二极管的方法。该方法包括以下步骤。提供基板。在衬底的表面上生长第一半导体层。图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。暴露的第一半导体层被蚀刻以形成突出的一对。通过去除图案化掩模层形成多个三维纳米结构。在三维纳米结构的数量上依次生长有源层和第二半导体层。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。

106. 发明授权

US08759857B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08759857B2
公开(公告)日：2014-06-24
申请号：US13479223
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/20 , H01L33/382
摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.
摘要翻译：提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。远离有源层的衬底的表面被配置为发光表面。第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。有源层和第二半导体层以该顺序堆叠在第二表面上。第一电极与第一半导体层电连接。第二电极与第二半导体层的表面电连接并覆盖其表面。多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。

107. 发明授权

US08624285B2 Light emitting diode with three-dimensional nano-structures 有权
标题翻译：具有三维纳米结构的发光二极管
公开(公告)号：US08624285B2
公开(公告)日：2014-01-07
申请号：US13479225
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/38 , H01L33/382
摘要： A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.
摘要翻译：提供了包括第一半导体层，有源层和第二半导体层的发光二极管。第一半导体层包括第一表面和第二表面。有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。第一电极与第一半导体层的第一表面电连接并覆盖第一半导体层的第一表面。第二电极与第二半导体层电连接。多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。

108. 发明授权

US08603304B2 Method for manufacturing nickel silicide nano-wires 有权
标题翻译：镍硅化物纳米线的制造方法
公开(公告)号：US08603304B2
公开(公告)日：2013-12-10
申请号：US13588222
申请日：2012-08-17
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C23C14/34
CPC分类号： C01B33/06 , C30B23/00 , C30B29/10 , C30B29/60
摘要： A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are provided. Secondly, a silicon dioxide layer is formed on a surface of the silicon substrate. Thirdly, a titanium layer is formed on the silicon dioxide layer. Fourthly, the silicon substrate is placed into the reacting room, and the reacting room is heated to a temperature of 500˜1000° C. Finally, a plurality of nickel cluster is formed onto the surface of the silicon substrate.
摘要翻译：一种制造硅化镍纳米线的方法，该方法包括以下步骤。首先，提供硅衬底和生长装置，并且提供包括反应室的生长装置。其次，在硅衬底的表面上形成二氧化硅层。第三，在二氧化硅层上形成钛层。第四，将硅衬底放置在反应室中，并将反应室加热到500〜1000℃的温度。最后，在硅衬底的表面上形成多个镍簇。

109. 发明授权

US08404504B1 Method for making light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08404504B1
公开(公告)日：2013-03-26
申请号：US13340662
申请日：2011-12-29
申请人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/38 , H01L33/405 , H01L33/44
摘要： A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, the light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layers stacked on a surface of a substrate in that order. A patterned mask layer is located on the second semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side. The second semiconductor layer is etched to form a number of three-dimensional nano-structures preform. The mask layer is removed to form a number of M-shaped three-dimensional nano-structures. The second semiconductor layer and the active layer are etched to expose a portion of the first semiconductor layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.
摘要翻译：提供一种制造发光二极管的方法。该方法包括以下步骤。提供了一种发光二极管芯片，发光二极管依次包括第一半导体层，有源层和堆叠在基板的表面上的第二半导体层。图案化掩模层位于第二半导体层上，并且图案化掩模层包括多个并排排列的条形突出结构。蚀刻第二半导体层以形成多个三维纳米结构预制件。去除掩模层以形成多个M形的三维纳米结构。蚀刻第二半导体层和有源层以暴露第一半导体层的一部分。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。

110. 发明授权

US08377728B1 Method for making light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08377728B1
公开(公告)日：2013-02-19
申请号：US13340653
申请日：2011-12-29
申请人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A patterned mask layer is located on a surface of the substrate, and the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side, a slot is defined between each two adjacent protruding structures to expose a portion of the substrate. The exposed substrate is etched, and each two adjacent protruding structures begin to slant face to face until closed to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. A first semiconductor layer, an active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.
摘要翻译：提供一种制造发光二极管的方法。该方法包括以下步骤。提供基板。图案化的掩模层位于衬底的表面上，并且图案化掩模层包括多个并排排列的条形突出结构，在每个两个相邻的突出结构之间限定一个槽以暴露衬底的一部分。蚀刻暴露的基板，并且每两个相邻的突出结构开始朝向相对倾斜，直到闭合以形成突出的对。通过去除图案化掩模层形成多个三维纳米结构。第一半导体层，有源层和第二半导体层依次生长在三维纳米结构的数量上。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。

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