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101. 发明授权

US07935563B2 Solid-state imaging device and method for manufacturing thereof as well as driving method of solid-state imaging device 有权
标题翻译：固态成像装置及其制造方法以及固态成像装置的驱动方法
公开(公告)号：US07935563B2
公开(公告)日：2011-05-03
申请号：US12323019
申请日：2008-11-25
申请人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
发明人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
IPC分类号： H01L27/146
CPC分类号： H01L27/14601 , H01L27/14689 , H01L27/14806 , H04N5/335
摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
摘要翻译：具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域，像素分离区域。

102. 发明授权

US07910914B2 Semiconductor memory and method for manufacturing the same 有权
标题翻译：半导体存储器及其制造方法
公开(公告)号：US07910914B2
公开(公告)日：2011-03-22
申请号：US12018486
申请日：2008-01-23
申请人： Hiroyasu Tanaka , Ryota Katsumata , Hideaki Aochi , Masaru Kidoh , Masaru Kito , Mitsuru Sato
发明人： Hiroyasu Tanaka , Ryota Katsumata , Hideaki Aochi , Masaru Kidoh , Masaru Kito , Mitsuru Sato
IPC分类号： H01L45/00
CPC分类号： H01L27/101 , G11C5/025 , G11C5/063 , G11C11/1655 , G11C11/1659 , G11C13/0007 , G11C13/0023 , G11C13/0026 , G11C13/0028 , G11C2213/31 , G11C2213/32 , G11C2213/71 , G11C2213/72 , H01L27/224 , H01L27/228 , H01L27/2409 , H01L27/2454 , H01L27/249 , H01L45/06 , H01L45/085 , H01L45/1226 , H01L45/144 , H01L45/147
摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a plurality of memory devices each having: a resistance change element, and a diode connected serially to the resistance change element; and a source conductive layer spreading two-dimensionally to be connected to one ends of the plurality of memory devices.
摘要翻译：根据本发明的一个方面，提供了一种非易失性半导体存储器，包括：多个存储器件，每个存储器件具有电阻变化元件和串联连接到电阻变化元件的二极管; 以及源极传导层，二维扩展以连接到多个存储器件的一端。

103. 发明申请

US20110031467A1 INFORMATION RECORDING AND REPRODUCING APPARATUS 审中-公开
标题翻译：信息记录和再现设备
公开(公告)号：US20110031467A1
公开(公告)日：2011-02-10
申请号：US12849319
申请日：2010-08-03
申请人： Koichi KUBO , Mitsuru Sato , Chikayoshi Kamata , Noriko Bota
发明人： Koichi KUBO , Mitsuru Sato , Chikayoshi Kamata , Noriko Bota
IPC分类号： H01L45/00
CPC分类号： G11B9/04 , G11B9/149 , G11C13/0007 , G11C13/003 , G11C2213/34 , G11C2213/53 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/147
摘要： An information recording and reproducing apparatus according to an embodiment has a memory cell including a recording layer operative to change in a reversible manner between a first state having a certain resistance value upon application of a voltage pulse and a second state having a resistance value higher than that of the first state. The recording layer includes a first compound layer represented by a composition formula of AxMyX4 (0.1≦x≦1.2, 2
摘要翻译：根据实施例的信息记录和再现装置具有存储单元，该存储单元包括记录层，该记录层可操作以在施加电压脉冲时具有一定电阻值的第一状态和电阻值高于第一状态的第二状态之间以可逆方式改变第一个状态。记录层包括由组成式AxMyX4表示的第一化合物层（0.1＆nlE; x＆lt; l1; 1.2,2＆lt; y＆lt; nlE; 2.9）。 A是选自Mn（锰），Fe（铁），Co（钴），Ni（镍）和Cu（铜）中的至少一种元素。 M是选自Al（铝），Ga（镓），Ti（钛），Ge（锗）和Sn（锡）中的至少一种元素。 X是O（氧）。

104. 发明授权

US07868315B2 Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07868315B2
公开(公告)日：2011-01-11
申请号：US12037402
申请日：2008-02-26
申请人： Hiroyasu Tanaka , Mitsuru Sato , Ryota Katsumata , Masaru Kidoh , Masaru Kito , Hideaki Aochi
发明人： Hiroyasu Tanaka , Mitsuru Sato , Ryota Katsumata , Masaru Kidoh , Masaru Kito , Hideaki Aochi
IPC分类号： H01L29/06
CPC分类号： H01L45/144 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/32 , G11C2213/75 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/146 , H01L45/1675
摘要： A phase change memory device including plural memory cells is disclosed. Each of the memory cells includes memory transistors and phase change film portions formed above or below the memory transistors. The phase change film portions correspond to the respective memory transistors respectively. Vias are provided in order to connect each of the memory transistor in parallel to each of the phase change film portions in each of the memory cells. The vias connect the memory cells in series to one another.
摘要翻译：公开了一种包括多个存储单元的相变存储器件。每个存储单元包括形成在存储晶体管的上方或下方的存储晶体管和相变膜部分。相变膜部分别对应于相应的存储晶体管。提供通孔，以将存储晶体管中的每一个与每个存储单元中的每个相变膜部分并联连接。通孔将存储单元串联连接。

105. 发明授权

US07821093B2 Solid-state imaging device with biased light shielding film 有权
标题翻译：具有偏光遮光膜的固态成像装置
公开(公告)号：US07821093B2
公开(公告)日：2010-10-26
申请号：US12277958
申请日：2008-11-25
申请人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
发明人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
IPC分类号： H01L31/062 , H01L31/113 , H01L31/0203 , H01L31/0232 , H01L31/107 , H01L31/00 , H01L31/06
CPC分类号： H01L27/14601 , H01L27/14689 , H01L27/14806 , H04N5/335
摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
摘要翻译：具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域，像素分离区域。

106. 发明授权

US07813203B2 Semiconductor memory device and method of manufacturing of the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07813203B2
公开(公告)日：2010-10-12
申请号：US12039461
申请日：2008-02-28
申请人： Fumitaka Arai , Masaru Kito , Mitsuru Sato
发明人： Fumitaka Arai , Masaru Kito , Mitsuru Sato
IPC分类号： G11C7/02
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A semiconductor memory device includes a plurality of active areas each extending in a first direction and including a memory cell string which includes select transistors and memory cells, current paths of which are connected in series, a first extension portion which is provided between one-side terminal end portions of two active areas neighboring in a second direction that crosses the first direction, and a second extension portion which is provided between other-side terminal end portions of the two active areas neighboring in the second direction, the first and second extension portions connecting the two active areas in a loop configuration.
摘要翻译：半导体存储器件包括多个有源区，每个有源区各自沿第一方向延伸，并且包括存储单元串，该存储单元串包括选择晶体管和存储单元，其电流通路串联连接，第一延伸部分设置在一侧在与第一方向相反的第二方向上相邻的两个有效区域的末端部分和设置在与第二方向相邻的两个有效区域的另一侧终端部分之间的第二延伸部分，第一和第二延伸部分以循环配置连接两个活动区域。

107. 发明申请

US20100237346A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20100237346A1
公开(公告)日：2010-09-23
申请号：US12556102
申请日：2009-09-09
申请人： Hiroshi Kanno , Kenichi Murooka , Mitsuru Sato
发明人： Hiroshi Kanno , Kenichi Murooka , Mitsuru Sato
IPC分类号： H01L29/12 , H01L21/8246
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/72 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： A rectifier is formed by forming a first electrode layer, a semiconductor layer and a second electrode layer. A third electrode layer is formed between the first electrode layer and the semiconductor layer, or between the second electrode layer and the semiconductor layer.The semiconductor layer and the third electrode layer are formed as follows. First, a first layer made from amorphous silicon and including a p-type first semiconductor region and an n-type second semiconductor region is deposited. Next, a second layer made from a metal is deposited on an upper or lower layer of the first layer. The third electrode layer including a metal silicide as a material lattice-matched to polysilicon is formed by siliciding the second layer. Next, the first layer is crystallized. Subsequently, the semiconductor layer is formed by activating an impurity included in the first layer and restoring crystal imperfections included in the first layer.
摘要翻译：整流器通过形成第一电极层，半导体层和第二电极层而形成。在第一电极层和半导体层之间或第二电极层和半导体层之间形成第三电极层。半导体层和第三电极层如下形成。首先，沉积由非晶硅制成并包括p型第一半导体区域和n型第二半导体区域的第一层。接下来，将由金属制成的第二层沉积在第一层的上层或下层上。通过硅化第二层来形成包括与多晶硅晶格匹配的材料的金属硅化物的第三电极层。接下来，第一层结晶。随后，通过激活包括在第一层中的杂质并恢复包括在第一层中的晶体缺陷来形成半导体层。

108. 发明授权

US07730400B2 Display unit with touch panel, method of controlling the same, and computer products 失效
标题翻译：带触摸屏的显示单元，控制方法和计算机产品
公开(公告)号：US07730400B2
公开(公告)日：2010-06-01
申请号：US10436058
申请日：2003-05-13
申请人： Mitsuru Sato
发明人： Mitsuru Sato
IPC分类号： G06F3/01
CPC分类号： G06F3/0421
摘要： A display unit includes a touch point locus detector that detects a locus of a touch point on the touch panel, and a suspended touch detector that detects that the touch is suspended when the touch point remains at rest at one spot for at least a predetermined time period while the locus is detected. The display unit also includes a graphics identifying section that identifies a graphics indicated by the locus when the suspended touch is detected, and a graphics display section that displays the locus on a display screen, erases the displayed locus after the graphics identification is finished, and displays a graphics obtained through the identification on the display screen.
摘要翻译：显示单元包括：触摸点轨迹检测器，其检测触摸面板上的触摸点的轨迹;以及悬架触摸检测器，当触摸点在一个点保持静止至少预定时间时，检测到所述触摸被暂停而检测到轨迹。显示单元还包括图形识别部分，其识别当检测到悬浮触摸时由轨迹指示的图形;以及图形显示部分，其在显示屏幕上显示轨迹，在图形识别完成之后擦除显示的轨迹;以及在显示屏上显示通过识别获得的图形。

109. 发明申请

US20100007276A1 Ultra High Pressure Mercury Discharge Lamp 审中-公开
标题翻译：超高压汞放电灯
公开(公告)号：US20100007276A1
公开(公告)日：2010-01-14
申请号：US12482271
申请日：2009-06-10
申请人： Naoki Goto , Nobuyuki Konno , Mitsuru Sato , Toshimitsu Tanaka
发明人： Naoki Goto , Nobuyuki Konno , Mitsuru Sato , Toshimitsu Tanaka
IPC分类号： H01J61/20
CPC分类号： H01J61/368 , H01J61/86
摘要： A highly reliable ultra-high pressure mercury discharge lamp with a low risk of breakage of the quartz tube. The ultra-high pressure mercury discharge lamp includes a light emitting tube 2 in which a pair of electrode systems 24a, 24b is enclosed within a quartz tube. The pair of electrode systems 24a, 24b is outfitted with an electrode 21a, 21b having a weld 21a-2, 21b-2, a metal strip 22a, 22b with one end that is welded to the weld 21a-2, 21b-2, and a connection line 23a, 23b connected to the other end of the metal strip 22a, 22b. An aperture portion 22a-1, 22b-1 is provided in the metal strip 22a, 22b in the area surrounding the weld 21a-2, 21b-2.
摘要翻译：高可靠性的超高压汞放电灯，石英管破裂风险低。超高压汞放电灯包括其中一对电极系统24a，24b封装在石英管内的发光管2。一对电极系统24a，24b配备有具有焊接部21a-2，21b-2，金属带22a，22b的电极21a，21b，其一端焊接到焊接部21a-2，21b-2，以及与金属条22a，22b的另一端连接的连接线23a，23b。在围绕焊缝21a-2，21b-2的区域中的金属带22a，22b中设置开口部分22a-1，22b-1。

110. 发明申请

US20090194794A1 SOLID-STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20090194794A1
公开(公告)日：2009-08-06
申请号：US12420890
申请日：2009-04-09
申请人： Kazushi WADA , Kouichi Harada , Shuji Otsuka , Mitsuru Sato
发明人： Kazushi WADA , Kouichi Harada , Shuji Otsuka , Mitsuru Sato
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L27/14806
摘要： Crosstalk between the adjacent pixels can be prevented by a structure in which an overflow barrier is provided at the deep portion of a substrate.A partial P type region 150 is provided at the predetermined position of a lower layer region of the vertical transfer register 124 and a channel stop region 126. This P type region 150 is used to adjust potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 so that the potential may become smaller than that of the lower layer region of the photosensor 122 in a range from the minimum potential position of the vertical transfer register 124 to the overflow barrier 128. Accordingly, since the potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily. Thus, crosstalk between the adjacent pixels can be prevented.
摘要翻译：可以通过在衬底的深部设置溢流阻挡层的结构来防止相邻像素之间的串扰。部分P型区域150设置在垂直传送寄存器124的下层区域的预定位置和通道停止区域126.该P型区域150用于调整垂直传送寄存器的下层区域中的电位 124和通道停止区域126，使得在从垂直传送寄存器124的最小电位位置到溢流挡板128的范围内，电位可能变得小于光传感器122的下层区域的电位。因此，由于电位在垂直传送寄存器124的下层区域和下层区域两侧的沟道阻挡区域126为低，由传感器区域光电转换的电荷被该势垒阻挡，并且不能容易地扩散。因此，可以防止相邻像素之间的串扰。

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