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    • 103. 发明授权
    • Distortion resistant array substrate and touch-sensitive display panel having the same
    • 抗扭曲阵列基板和具有相同功能的触敏显示面板
    • US08102496B2
    • 2012-01-24
    • US12634607
    • 2009-12-09
    • Dong-Gyu Kim
    • Dong-Gyu Kim
    • G02F1/1343
    • G02F1/134363G02F1/13338G02F1/136286G06F3/0412
    • An array substrate includes a plurality of gate lines, a plurality of data lines, a plurality of thin-film transistors, a plurality of pixel electrodes, a plurality of common voltage lines and a plurality of common electrodes. The gate lines extend in a first direction. The data lines extend in a second direction substantially perpendicular to the first direction. The thin-film transistor is electrically connected to the gate line and the data line. The pixel electrode is formed in each of pixels defined by the gate lines and the data lines. The common electrode is electrically connected to the common voltage line. The horizontal alignment of the liquid crystal molecules is not changed by externally applied vertical touch pressure so that display quality is improved.
    • 阵列基板包括多个栅极线,多个数据线,多个薄膜晶体管,多个像素电极,多个公共电压线和多个公共电极。 栅极线在第一方向上延伸。 数据线在基本上垂直于第一方向的第二方向上延伸。 薄膜晶体管电连接到栅极线和数据线。 像素电极形成在由栅极线和数据线限定的每个像素中。 公共电极电连接到公共电压线。 液晶分子的水平排列不会由外部施加的垂直接触压力而改变,从而提高显示质量。
    • 104. 发明申请
    • LIQUID CRYSTAL DISPLAY HAVING A MODIFIED ELECTRODE ARRAY
    • 具有修改电极阵列的液晶显示器
    • US20110279758A1
    • 2011-11-17
    • US13191069
    • 2011-07-26
    • Jin-Tae YuhKye-Hun LeeByoung-Sun NaDong-Gyu KimJong-Woong ChangJung-Uk ShimJang-Kun SongHyun-Sik Lee
    • Jin-Tae YuhKye-Hun LeeByoung-Sun NaDong-Gyu KimJong-Woong ChangJung-Uk ShimJang-Kun SongHyun-Sik Lee
    • G02F1/1335G02F1/1343
    • G02F1/134363G02F2001/134372G02F2001/134381
    • A liquid crystal display having electrodes on a single substrate. A transparent planar electrode elongated in the transverse direction is formed on the inner surface of a substrate, and an insulating film is deposited thereon. A plurality of linear electrodes, which are elongated in the longitudinal direction and either transparent or opaque, are formed on the insulating film. Potential difference between the planar and the linear electrodes generated by applying voltages to the electrodes yields an electric field. The electric field is symmetrical with respect to the longitudinal central line of the linear electrodes, and has parabolic or semi-elliptical lines of force having a center on a boundary line between the planar and the linear electrodes. The line of force on the planar and the linear electrodes and on the boundary line between the planar and the linear electrodes has the vertical and the horizontal components, and the liquid crystal molecules are re-arranged to have a twist angle and a tilt angle. The polarization of the incident light varies due to the rearrangement of the liquid crystal molecules.
    • 在单个基板上具有电极的液晶显示器。 在基板的内表面上形成横向延伸的透明平面电极,在其上淀积绝缘膜。 在绝缘膜上形成多个沿纵向细长且透明或不透明的线状电极。 通过向电极施加电压而产生的平面和线性电极之间的电位差产生电场。 电场相对于线性电极的纵向中心线对称,并且具有在平面和线性电极之间的边界线上具有中心的抛物线或半椭圆线。 在平面和线状电极上以及平面和线状电极之间的边界线上的力线具有垂直和水平分量,并且液晶分子重新布置成具有扭转角和倾斜角。 入射光的偏振由于液晶分子的重排而变化。
    • 105. 发明授权
    • Thin film transistor array panel
    • 薄膜晶体管阵列面板
    • US07986379B2
    • 2011-07-26
    • US12728138
    • 2010-03-19
    • Joo-Hyung LeeDong-Gyu KimWoon-Yong Park
    • Joo-Hyung LeeDong-Gyu KimWoon-Yong Park
    • G02F1/1333G02F1/136
    • G02F1/136204G02F2001/133388
    • A data line and an amorphous silicon pattern are formed on a substrate. The first electrode pattern is extended from the data line and overlaps an edge of the amorphous silicon pattern. The second electrode pattern is made of the same metal as the first electrode pattern and overlaps the edge of the amorphous silicon pattern at an opposite side of the first electrode pattern. Edges of the first and the second electrode patterns are sharply formed so that a tunneling effect easily occurs through the amorphous silicon pattern. An indium-tin-oxide pattern for a capacitor is formed at the end of the second electrode pattern. The capacitor is formed between the ITO pattern and a common electrode.
    • 在基板上形成数据线和非晶硅图案。 第一电极图案从数据线延伸并与非晶硅图案的边缘重叠。 第二电极图案由与第一电极图案相同的金属制成,并且在第一电极图案的相对侧与非晶硅图案的边缘重叠。 尖锐地形成第一和第二电极图案的边缘,使得通过非晶硅图案容易发生隧道效应。 在第二电极图案的末端形成用于电容器的铟锡氧化物图案。 电容器形成在ITO图案和公共电极之间。
    • 107. 发明授权
    • Thin film transistor array panel and methods for manufacturing the same
    • 薄膜晶体管阵列面板及其制造方法
    • US07943939B2
    • 2011-05-17
    • US12834798
    • 2010-07-12
    • Dong-Gyu KimJong-Soo Yoon
    • Dong-Gyu KimJong-Soo Yoon
    • H01L29/04H01L21/00
    • G02F1/13458G02F1/136227G02F2001/136222H01L27/12H01L27/124H01L27/1285H01L27/1288H01L27/1292H01L29/4908H01L29/66765H01L29/78633
    • Disclosed is a simplified method for manufacturing a liquid crystal display. A gate wire including a gate line, a gate pad, and a gate electrode are formed on a substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, a first portion of the photoresist pattern which is located between the source electrode and the drain electrode is thinner than a second portion which is located on the data wire, and the photoresist layer is totally removed on other parts. The thin portion is made by controlling the amount of irradiating light or by a reflow process to form a thin portion, and the amount of light is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, and thereby the underlying ohmic contact layer is exposed. Then the exposed ohmic contact layer and the underlying semiconductor layer are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the underlying ohmic contact layer pattern. Then, the second portion of the photoresist layer is removed, and red, green, and blue color filters, a pixel electrode, a redundant gate pad, and a redundant data pad are formed.
    • 公开了一种用于制造液晶显示器的简化方法。 在基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 依次沉积栅极绝缘层,半导体层和欧姆接触层,并在其上涂覆光致抗蚀剂层。 光致抗蚀剂层通过掩模曝光并显影以形成光致抗蚀剂图案。 此时,位于源电极和漏电极之间的光致抗蚀剂图案的第一部分比位于数据线上的第二部分薄,并且光致抗蚀剂层在其它部分被完全去除。 通过控制照射光的量或通过回流工艺形成薄的部分来制造薄部分,并且通过使用具有狭缝的掩模来控制光量,小的图案小于曝光装置的分辨率 ,或部分透明的层。 接下来,通过湿蚀刻或干蚀刻去除导体层的暴露部分,从而暴露下面的欧姆接触层。 然后通过干蚀刻与光致抗蚀剂层的第一部分一起去除暴露的欧姆接触层和下面的半导体层。 通过灰化除去光致抗蚀剂层的残留物。 通过去除沟道处的导体层的部分和下面的欧姆接触层图案来分离源极/漏极。 然后,除去光致抗蚀剂层的第二部分,并形成红色,绿色和蓝色滤色器,像素电极,冗余栅极焊盘和冗余数据焊盘。
    • 110. 发明授权
    • Thin film transistor array panel and manufacturing method thereof
    • 薄膜晶体管阵列面板及其制造方法
    • US07884365B2
    • 2011-02-08
    • US12043615
    • 2008-03-06
    • Young-Mi TakSeung-Soo BaekJoo-Ae YounDong-Gyu Kim
    • Young-Mi TakSeung-Soo BaekJoo-Ae YounDong-Gyu Kim
    • H01L29/04H01L31/036H01L31/0376H01L31/20
    • H01L27/1288H01L27/124H01L29/78696
    • A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.
    • TFT阵列面板包括:彼此连接的第一和第二栅极部件; 形成在所述第一和第二栅极部件上的栅极绝缘层; 第一和第二半导体部件分别形成在与第一和第二栅极部件相对的栅极绝缘层上; 第一和第二源元件分别彼此连接并位于第一和第二半导体元件附近; 分别位于第一和第二半导体构件附近并分别相对于第一和第二栅极构件相对于第一和第二源构件定位的第一和第二排出构件; 以及连接到第一和第二漏极部件的像素电极。 第一栅极,半导体,源极和漏极部件形成第一TFT,第二栅极,半导体,源极和漏极部件形成第二TFT。