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101. 发明授权

US07550731B2 Coversion apparatus and imaging system 失效
标题翻译：转换装置和成像系统
公开(公告)号：US07550731B2
公开(公告)日：2009-06-23
申请号：US11750719
申请日：2007-05-18
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
IPC分类号： G01T1/24 , H01L27/146
CPC分类号： H01L27/14665
摘要： A conversion apparatus includes a pixel region, on a substrate, including a plurality of pixels arranged in a matrix, with each pixel having a conversion element that converts radiation into electric charges, and a switching element. The switching element has a structure having a gate electrode, a first insulating layer, a second insulating layer, and a semiconductor layer from the substrate side in this order. The conversion element has an MIS-type structure of a bottom electrode arranged on an insulating layer extending from the first insulating layer of the switching element and being vertically higher than the gate electrode of the switching element, an insulating layer which is formed of the same layer as the second insulating layer of the switching element, and a semiconductor layer which is formed of the same layer as the semiconductor layer of the switching element from the substrate side in this order.
摘要翻译：转换装置包括在基板上的像素区域，其包括以矩阵形式布置的多个像素，每个像素具有将辐射转换成电荷的转换元件和开关元件。开关元件具有从基板侧依次具有栅电极，第一绝缘层，第二绝缘层和半导体层的结构。转换元件具有底部电极的MIS型结构，该底部电极布置在从开关元件的第一绝缘层延伸并垂直于开关元件的栅电极的绝缘层上，由其形成的绝缘层作为开关元件的第二绝缘层的层，以及从基板侧依次形成与开关元件的半导体层相同的层的半导体层。

102. 发明授权

US07535506B2 Solid-state image pickup device and radiation image pickup device suitable for use in a flat panel detector 失效
标题翻译：适用于平板检测器的固态摄像装置和放射摄像装置
公开(公告)号：US07535506B2
公开(公告)日：2009-05-19
申请号：US10537907
申请日：2004-02-10
申请人： Keiichi Nomura , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii
发明人： Keiichi Nomura , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii
IPC分类号： H04N3/14 , H01L27/00
CPC分类号： H04N5/32 , H01L27/14603 , H01L27/14658
摘要： A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.
摘要翻译：根据本发明的固态图像拾取装置具有多个光电转换元件和多个开关元件。光电转换元件形成在至少一个开关元件上方，并且屏蔽电极层设置在开关元件和光电转换元件之间。此外，根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件，并且具有形成在一个或多个开关元件上方的辐射转换层和屏蔽电极层之间设置在开关元件和辐射转换层之间。

103. 发明申请

US20090075405A1 IMAGING APPARATUS, RADIATION IMAGING APPARATUS, AND MANUFACTURING METHODS THEREFOR 有权
标题翻译：成像装置，放射成像装置及其制造方法
公开(公告)号：US20090075405A1
公开(公告)日：2009-03-19
申请号：US12273602
申请日：2008-11-19
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
IPC分类号： H01L21/66
CPC分类号： H01L27/14603 , H01L27/1462 , H01L27/14632 , H01L27/14665 , H01L27/14685 , H01L27/14687 , H01L27/14692
摘要： An imaging apparatus is provided in which a plurality of pixels, each having a conversion element and a thin-film transistor, are arranged in a two-dimensional fashion on an insulating substrate; the photoelectric conversion element is arranged over the thin-film transistor, with an insulating film, which serves as an interlayer insulating film, inserted between the conversion element and the thin-film transistor; and by way of a contact hole portion provided in the insulating film, the source electrode or the drain electrode of the thin-film transistor and the photoelectric conversion element are connected with each other. The imaging apparatus has a pixel in which the contact hole portion is removed through a laser-beam irradiation so that the connection portion between the conversion element and a conductive layer, which serves as the source electrode or the drain electrode of the thin-film transistor, is discontinued.
摘要翻译：提供了一种成像装置，其中具有转换元件和薄膜晶体管的多个像素以二维方式布置在绝缘基板上; 光电转换元件布置在薄膜晶体管的上方，并且插入在转换元件和薄膜晶体管之间的绝缘膜，其用作层间绝缘膜; 并且通过设置在绝缘膜中的接触孔部分，薄膜晶体管的源电极或漏电极和光电转换元件彼此连接。成像装置具有像素，其中通过激光束照射去除接触孔部分，使得转换元件和用作薄膜晶体管的源电极或漏电极的导电层之间的连接部分，停产。

104. 发明申请

US20090008533A1 RADIATION IMAGING APPARATUS AND RADIATION IMAGING SYSTEM 失效
标题翻译：辐射成像装置和辐射成像系统
公开(公告)号：US20090008533A1
公开(公告)日：2009-01-08
申请号：US12210839
申请日：2008-09-15
申请人： TAKAMASA ISHII , Chiori Mochizuki , Minoru Watanabe
发明人： TAKAMASA ISHII , Chiori Mochizuki , Minoru Watanabe
IPC分类号： H01L27/00
CPC分类号： H01L27/14643 , G01T1/2018 , G01T1/24 , H01L27/14603 , H01L27/14632 , H01L27/14663 , H01L27/14692 , H01L31/105
摘要： A radiation imaging apparatus has a pixel region arranged on a substrate. Arranged in a matrix pattern in the pixel region are pixels, each pixel including a conversion element which converts radiation to electrical charges, and a switching element which is connected to the conversion element therein. The radiation imaging apparatus has, in a region outside the pixel region of the substrate, an intersection at which a signal line connected to the switching element and a bias line connected to the conversion element intersects. At the intersection, a semiconductor layer is arranged between the signal line and the bias line, and a carrier blocking portion is arranged between the semiconductor layer and the signal line.
摘要翻译：放射线成像装置具有布置在基板上的像素区域。在像素区域中以矩阵图案排列的是像素，每个像素包括将辐射转换成电荷的转换元件，以及连接到转换元件的开关元件。放射线摄像装置在基板的像素区域外的区域中具有与开关元件连接的信号线和与转换元件连接的偏置线交叉的交点。在交叉点处，在信号线和偏置线之间设置半导体层，并且在半导体层和信号线之间配置载流子阻挡部。

105. 发明授权

US07465933B2 Radiographic imaging substrate, radiographic imaging apparatus, and radiographic imaging system 有权
标题翻译：射线照相成像基片，放射成像装置和放射成像系统
公开(公告)号：US07465933B2
公开(公告)日：2008-12-16
申请号：US11957843
申请日：2007-12-17
申请人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
发明人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
IPC分类号： G01T1/20 , H01L27/146
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14609 , H01L27/14663 , H01L27/14676 , H01L27/14687
摘要： A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating, With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electricity charged in a manufacturing process.
摘要翻译：一种放射线摄影成像装置，包括：光电转换基板，包括像素区域，其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件，用于向光电转换元件施加偏压的偏置线，用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件，用于将辐射转换成能够由光电转换元件检测的光，所述波长转换元件根据包括像素区域的区域设置; 以及连接布线，其具有连接到相同类型的偏置线，信号线和栅极线的至少多条线的光电转换层，其中连接布线的至少一部分布置在绝缘基板和绝缘体的边缘。通过这种布置，可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板，即使在基板是电的情况下，也不会导致静电导致的装置性能和装置破坏的劣化在制造过程中充电。

106. 发明申请

US20080203311A1 IMAGING APPARATUS AND RADIATION IMAGING SYSTEM 失效
标题翻译：成像装置和放射成像系统
公开(公告)号：US20080203311A1
公开(公告)日：2008-08-28
申请号：US12034969
申请日：2008-02-21
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
IPC分类号： G01T1/24
CPC分类号： G01T1/2928 , H01L27/14658 , H01L27/14692
摘要： An imaging apparatus includes a plurality of pixels disposed on an insulation substrate. Each of the pixels includes a plurality of thin-film transistors, a conversion element disposed above the TFTs, and a plurality of insulating layers disposed between the conversion element and the plurality of TFTs. The plurality of TFTs includes a reading TFT having a gate electrode electrically connected to the conversion element and a first selecting TFT electrically connected to a source electrode or a drain electrode of the reading TFT. At least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers.
摘要翻译：成像装置包括设置在绝缘基板上的多个像素。每个像素包括多个薄膜晶体管，设置在TFT上方的转换元件以及设置在转换元件和多个TFT之间的多个绝缘层。多个TFT包括具有与转换元件电连接的栅电极的读取TFT和与读取TFT的源电极或漏电极电连接的第一选择TFT。信号布线中的至少一个传输与通过转换元件进行的入射光或辐射的转换获得的电荷相对应的信号的信号线以及向第一选择的栅电极提供驱动信号的栅极布线薄膜晶体管，设置在多个绝缘层之间。

107. 发明申请

US20080067942A1 LIGHT CONTROL CIRCUIT 失效
标题翻译：灯控制电路
公开(公告)号：US20080067942A1
公开(公告)日：2008-03-20
申请号：US11853157
申请日：2007-09-11
申请人： Minoru Watanabe , Mitsuru Kano , Minoru Fujiwara
发明人： Minoru Watanabe , Mitsuru Kano , Minoru Fujiwara
IPC分类号： H05B41/36
CPC分类号： H05B33/0851
摘要： An illuminance sensor is formed as a current output type sensor that outputs a current which increases or decreases in an analog manner corresponding to an increasing or decreasing change of the illuminance. A light-emitting device is connected with a detection resistor that detects a current flowing through a light-emitting device. A driving control circuit has a light-emitting device driver that outputs to the light-emitting device a voltage for holding a voltage, which is obtained when a current flowing through the light-emitting device and a current detected by the illuminance sensor flows through the detection resistor, in a predetermined value all the time. The light-emitting device emits a large amount of light in a dark place and emits a small amount of light in a bright place.
摘要翻译：形成照度传感器作为电流输出型传感器，其输出对应于照度的增加或减少的变化的模拟方式增减的电流。发光装置与检测电流流过发光装置的检测电阻连接。驱动控制电路具有发光装置驱动器，其向发光装置输出用于保持电压的电压，该电压是当流过发光装置的电流和由照度传感器检测的电流流过该电压时获得的检测电阻，始终处于预定值。发光装置在黑暗的地方发出大量的光，并在明亮的地方发出少量的光。

108. 发明申请

US20070272870A1 RADIATION IMAGING APPARATUS AND RADIATION IMAGING SYSTEM 失效
标题翻译：辐射成像装置和辐射成像系统
公开(公告)号：US20070272870A1
公开(公告)日：2007-11-29
申请号：US11751702
申请日：2007-05-22
申请人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe
发明人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe
IPC分类号： G01T1/24 , H01L27/146 , H01L25/00 , H01L27/00
CPC分类号： H01L27/14643 , G01T1/2018 , G01T1/24 , H01L27/14603 , H01L27/14632 , H01L27/14663 , H01L27/14692 , H01L31/105
摘要： A radiation imaging apparatus has a pixel region arranged on a substrate. Arranged in a matrix pattern in the pixel region are pixels, each pixel including a conversion element which converts radiation to electrical charges, and a switching element which is connected to the conversion element therein. The radiation imaging apparatus has, in a region outside the pixel region of the substrate, an intersection at which a signal line connected to the switching element and a bias line connected to the conversion element intersects. At the intersection, a semiconductor layer is arranged between the signal line and the bias line, and a carrier blocking portion is arranged between the semiconductor layer and the signal line.
摘要翻译：放射线成像装置具有布置在基板上的像素区域。在像素区域中以矩阵图案排列的是像素，每个像素包括将辐射转换成电荷的转换元件，以及连接到转换元件的开关元件。放射线摄像装置在基板的像素区域外的区域中具有与开关元件连接的信号线和与转换元件连接的偏置线交叉的交点。在交叉点处，在信号线和偏置线之间设置半导体层，并且在半导体层和信号线之间配置载流子阻挡部。

109. 发明授权

US07295588B2 Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device 失效
标题翻译：半导体激光元件及其制造方法以及多波长单片半导体激光器件
公开(公告)号：US07295588B2
公开(公告)日：2007-11-13
申请号：US10724570
申请日：2003-11-26
申请人： Akira Tanaka , Hideo Shiozawa , Minoru Watanabe , Koichi Gen-Ei , Hirokazu Tanaka
发明人： Akira Tanaka , Hideo Shiozawa , Minoru Watanabe , Koichi Gen-Ei , Hirokazu Tanaka
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/2206 , H01S5/2231 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： The present invention provides a semiconductor laser element, a method of fabrication thereof, and a multi-wavelength monolithic semiconductor laser device that achieve self-sustained pulsation up to a high output level and achieve self-sustained pulsation over a wide output range. A semiconductor laser element that exhibits self-sustained pulsation in a predetermined output region, said semiconductor laser element comprising: a substrate; a first conductive type clad layer formed on said substrate; an active layer formed on said first conductive type clad layer for emitting light by current injection; a second conductive type first clad layer formed on said active layer; and a stripe-shaped second conductive type second clad layer formed on said second conductive type first clad layer in a first direction, in such a manner that the cross-sectional surface of said stripe-shaped second conductive type second clad layer in a direction perpendicular to said first direction has a shape having an upper edge and a lower edge that face each other and side edges that connect between said upper edge and said lower edge, where the minimum width thereof is at least 70% but no more than 100% of the maximum width.
摘要翻译：本发明提供一种半导体激光元件及其制造方法，以及多波长单片半导体激光器件，其能够在高输出电平下实现自持脉动，并在宽输出范围内实现自持脉动。一种半导体激光元件，其在预定的输出区域中呈现自持脉动，所述半导体激光元件包括：基板; 形成在所述基板上的第一导电型覆盖层; 形成在所述第一导电型覆盖层上用于通过电流注入发光的有源层; 形成在所述有源层上的第二导电类型的第一覆盖层; 以及在第一方向上形成在所述第二导电型第一覆盖层上的条形第二导电型第二覆盖层，使得所述条形第二导电型第二覆层在垂直方向上的横截面所述第一方向具有彼此面对的上边缘和下边缘以及连接在所述上边缘和所述下边缘之间的侧边缘的形状，其中最小宽度为至少70％但不大于100％最大宽度。

110. 发明申请

US20070251574A1 Dye-sensitized solar cell 审中-公开
标题翻译：染料敏化太阳能电池
公开(公告)号：US20070251574A1
公开(公告)日：2007-11-01
申请号：US11729873
申请日：2007-03-30
申请人： Hirokazu Fujimaki , Minoru Watanabe
发明人： Hirokazu Fujimaki , Minoru Watanabe
IPC分类号： H01L31/00
CPC分类号： H01G9/2031 , H01G9/2022 , H01G9/2068 , H01G9/2086 , Y02E10/542 , Y02P70/521
摘要： In a dye-sensitized solar cell comprising a first electrode having a photoelectric conversion layer, a second electrode disposed so as to oppose the first electrode, and electrolyte filled at least in between the first electrode and second electrode, the first electrode is constructed with a plurality of first electrode layers disposed superposed in a direction that opposes to the second electrode.
摘要翻译：在包括具有光电转换层的第一电极和与第一电极相对设置的第二电极以及至少填充在第一电极和第二电极之间的电解质的染料敏化太阳能电池中，第一电极由多个第一电极层，其设置在与第二电极相对的方向上重叠。

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