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101. 发明授权

US08647706B2 Film forming apparatus and method of manufacturing light emitting device 有权
标题翻译：成膜装置及其制造方法
公开(公告)号：US08647706B2
公开(公告)日：2014-02-11
申请号：US13295200
申请日：2011-11-14
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： C23C16/52 , B05D5/06 , B05D1/02 , B05D1/28
CPC分类号： H01L51/0004 , H01L27/1214 , H01L27/1259 , H01L27/32 , H01L51/0013 , H01L51/56
摘要： The problem regarding volatileness of a solvent in an EL forming material, which occurs in adopting printing, are solved. An EL layer is formed in a pixel, portion of a light emitting device by printing. Upon formation of the EL layer, a printing chamber is pressurized to reach a pressure equal to or higher than the atmospheric pressure, and the printing chamber is filled with inert gas or set to a solvent atmosphere. Thus the difficulty in forming an EL layer by printing is eliminated.
摘要翻译：解决了在采用印刷中发生的EL形成材料中的溶剂挥发性的问题。通过印刷在发光器件的像素部分中形成EL层。在形成EL层时，对印刷室进行加压以达到等于或大于大气压的压力，并且将印刷室填充惰性气体或设置在溶剂气氛中。因此消除了通过印刷形成EL层的困难。

102. 发明授权

US08633488B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08633488B2
公开(公告)日：2014-01-21
申请号：US13325129
申请日：2011-12-14
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L29/04 , G02F1/136
CPC分类号： H01L27/124 , G02F1/133553 , G02F1/134336 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2001/136295 , G02F2201/123 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02631 , H01L21/02686 , H01L21/3003 , H01L27/1214 , H01L27/1218 , H01L27/1222 , H01L27/1251 , H01L27/1255 , H01L27/1285 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L27/3279 , H01L29/66537 , H01L29/78621 , H01L29/78633 , H01L29/78678 , H01L29/78684 , H01L29/78696
摘要： An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together; and a pixel electrode connected to the semiconductor layer.
摘要翻译：具有像素结构的有源矩阵显示装置，其中像素电极，栅极布线和源极布线适当地布置在像素部分中，以实现高数值孔径，而不增加掩模的数量或台阶。该器件包括在绝缘表面上的栅电极和源极布线，栅电极和源极布线上的第一绝缘层，第一绝缘膜上的半导体层，半导体膜上的第二绝缘层，栅极布线连接到第二绝缘层上的栅电极，用于将源极配线和半导体层连接在一起的连接电极; 以及连接到半导体层的像素电极。

103. 发明授权

US08633051B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08633051B2
公开(公告)日：2014-01-21
申请号：US12859446
申请日：2010-08-19
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
IPC分类号： H01L31/0232 , H01L21/71
CPC分类号： G09F9/33 , H01L31/0203 , H01L31/02325
摘要： An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching.
摘要翻译：目的是防止当反射光进入布置在布置在预定地址处的光电转换元件的周围的光电转换元件时引起的定义（或分辨率）（外围模糊）的降低。通过以下步骤制造半导体器件：在第一透光衬底上形成具有第一透光衬底，多个光电转换元件的结构，设置成面对多个光电转换元件的第二透光衬底转换元件，密封剂，其被布置成结合第一透光性基板和第二透光性基板，并且包围多个光电转换元件; 并通过湿蚀刻使第一透光衬底变薄。

104. 发明授权

US08629439B2 Light emitting device, method of preparing the same and device for fabricating the same 有权
标题翻译：发光装置及其制备方法及其制造装置
公开(公告)号：US08629439B2
公开(公告)日：2014-01-14
申请号：US11476508
申请日：2006-06-28
申请人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
IPC分类号： H01L29/04
CPC分类号： H01L27/3211 , H01L27/32 , H01L27/322 , H01L27/3246 , H01L27/3258 , H01L51/5228 , H01L51/5234 , H01L51/5253 , H01L51/5281
摘要： A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.
摘要翻译：提供了具有高清晰度，高开口率和高可靠性的发光器件。本发明利用红色，绿色和蓝色的发光颜色实现全色平板显示器的高清晰度和高开口率，而不依赖于成膜方法和通过形成层叠部分的有机化合物层的沉积精度 21,22通过有意和部分地重叠相邻发光元件的不同有机化合物层。此外，形成含有氢的保护膜32a，并且用氢终止有机化合物层的缺点，从而实现亮度的提高和可靠性。

105. 发明授权

US08629433B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08629433B2
公开(公告)日：2014-01-14
申请号：US13012844
申请日：2011-01-25
申请人： Shunpei Yamazaki , Hideto Ohnuma
发明人： Shunpei Yamazaki , Hideto Ohnuma
IPC分类号： H01L29/12 , H01L29/00 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L27/1266 , H01L21/3081 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconductor substrate that has a projecting portion, and a bonding layer is formed to cover the projecting portion. In addition, before the bonding layer is formed, a portion of the semiconductor substrate to be the projecting portion is irradiated with accelerated ions to form a brittle layer. After the bonding layer and the supporting substrate are bonded together, heat treatment for separation of the semiconductor substrate is performed to provide a semiconductor layer over the supporting substrate. The semiconductor layer is selectively etched, and a semiconductor element is formed and a semiconductor device is manufactured.
摘要翻译：本发明的目的是提供一种制造具有晶体半导体层的半导体器件的高产率的方法，即使是具有低的上限极限的衬底。在半导体衬底的一部分中形成沟槽以形成具有突出部分的半导体衬底，并且形成接合层以覆盖突出部分。此外，在形成接合层之前，用加速离子照射作为突出部分的半导体衬底的一部分以形成脆性层。在接合层和支撑基板接合在一起之后，进行用于分离半导体衬底的热处理，以在支撑衬底上提供半导体层。选择性地蚀刻半导体层，形成半导体元件并制造半导体器件。

106. 发明授权

US08624400B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08624400B2
公开(公告)日：2014-01-07
申请号：US12840442
申请日：2010-07-21
申请人： Shunpei Yamazaki , Hideomi Suzawa , Shinya Sasagawa , Motomu Kurata
发明人： Shunpei Yamazaki , Hideomi Suzawa , Shinya Sasagawa , Motomu Kurata
IPC分类号： H01L23/52 , H01L29/786
CPC分类号： H01L29/41733 , H01L21/76804 , H01L21/76805 , H01L23/485 , H01L27/124 , H01L2924/0002 , H01L2924/00
摘要： A technique of manufacturing a semiconductor device in which etching in formation of a contact hole can be easily controlled is proposed. A semiconductor device includes at least a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; and a conductive layer formed over the second insulating layer connected to the semiconductor layer via an opening which is formed at least in the semiconductor layer and the second insulating layer and partially exposes the insulating surface. The conductive layer is electrically connected to the semiconductor layer at the side surface of the opening which is formed in the semiconductor layer.
摘要翻译：提出了可以容易地控制形成接触孔的蚀刻的半导体器件的制造技术。半导体器件至少包括形成在绝缘表面上的半导体层; 形成在所述半导体层上的第一绝缘层; 形成在所述第一绝缘层上的栅电极; 形成在所述栅电极上的第二绝缘层; 以及形成在所述第二绝缘层之上的导电层，所述导电层经由至少在所述半导体层和所述第二绝缘层中形成并且部分地暴露所述绝缘表面的开口连接到所述半导体层。导电层在形成于半导体层的开口的侧面与半导体层电连接。

107. 发明授权

US08624321B2 Thin film transistor including a microcrystalline semiconductor layer and amorphous semiconductor layer and display device including the same 有权
标题翻译：包括微晶半导体层和非晶半导体层的薄膜晶体管以及包括其的显示装置
公开(公告)号：US08624321B2
公开(公告)日：2014-01-07
申请号：US12398295
申请日：2009-03-05
申请人： Shunpei Yamazaki , Yoshiyuki Kurokawa , Hiromichi Godo , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Yoshiyuki Kurokawa , Hiromichi Godo , Hidekazu Miyairi
IPC分类号： H01L23/62
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/66765
摘要： A thin film transistor is provided, which includes a gate insulating layer covering a gate electrode, a microcrystalline semiconductor layer provided over the gate insulating layer, an amorphous semiconductor layer overlapping the microcrystalline semiconductor layer and the gate insulating layer, and a pair of impurity semiconductor layers which are provided over the amorphous semiconductor layer and to which an impurity element imparting one conductivity type is added to form a source region and a drain region. The gate insulating layer has a step adjacent to a portion in contact with an end portion of the microcrystalline semiconductor layer. A second thickness of the gate insulating layer in a portion outside the microcrystalline semiconductor layer is smaller than a first thickness thereof in a portion in contact with the microcrystalline semiconductor layer.
摘要翻译：提供一种薄膜晶体管，其包括覆盖栅极的栅极绝缘层，设置在栅极绝缘层上的微晶半导体层，与微晶半导体层和栅极绝缘层重叠的非晶半导体层，以及一对杂质半导体提供在非晶半导体层上并且添加赋予一种导电类型的杂质元素以形成源区和漏区的层。栅极绝缘层具有与微晶半导体层的端部接触的部分相邻的台阶。在与微晶半导体层接触的部分中，微晶半导体层外部的栅极绝缘层的第二厚度小于其第一厚度。

108. 发明授权

US08624258B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08624258B2
公开(公告)日：2014-01-07
申请号：US13223582
申请日：2011-09-01
申请人： Shunpei Yamazaki , Masahiko Hayakawa , Yoshifumi Tanada , Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
发明人： Shunpei Yamazaki , Masahiko Hayakawa , Yoshifumi Tanada , Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
IPC分类号： H01L27/14 , G09G3/30
CPC分类号： H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
摘要翻译：半导体元件由于静电放电损坏而劣化或被破坏。本发明提供一种其中在每个像素中形成保护装置的半导体器件。保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或晶体管的漏极。因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

109. 发明授权

US08610155B2 Light-emitting device, method for manufacturing the same, and cellular phone 有权
标题翻译：发光装置及其制造方法以及蜂窝电话
公开(公告)号：US08610155B2
公开(公告)日：2013-12-17
申请号：US12617379
申请日：2009-11-12
申请人： Kaoru Hatano , Satoshi Seo , Shunpei Yamazaki
发明人： Kaoru Hatano , Satoshi Seo , Shunpei Yamazaki
IPC分类号： H01L33/36 , H01L51/50
CPC分类号： H01L27/3251 , H01L27/3246 , H01L27/3253 , H01L27/3258 , H01L51/0024 , H01L51/0097 , H01L51/524 , H01L51/5259 , H01L2227/323 , H01L2251/5338 , H04M1/0268 , Y02E10/549 , Y02P70/521
摘要： The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.
摘要翻译：本发明涉及：一种发光装置，其包括具有第一电极的第一柔性基板，在第一电极上方的发光层，以及在发光层上方具有突出部分的第二电极和第二柔性基板具有电连接到半导体电路的半导体电路和第三电极，其中第二电极和第三电极的突出部分彼此电连接; 一种制造该发光装置的方法; 以及蜂窝电话，其包括并入有发光装置并具有纵向和横向的壳体，其中发光装置设置在壳体的前侧和上部的上部。

110. 发明授权

US08609181B2 Light emitting device and method for fabricating light emitting device 有权
公开(公告)号：US08609181B2
公开(公告)日：2013-12-17
申请号：US12507820
申请日：2009-07-23
申请人： Shunpei Yamazaki , Ritsuko Nagao , Yasuo Nakamura
发明人： Shunpei Yamazaki , Ritsuko Nagao , Yasuo Nakamura
IPC分类号： B05D5/06
CPC分类号： H01L27/3276 , G02F1/136204 , H01L27/3246 , H01L27/3248 , H01L51/5092 , H01L51/5203 , H01L51/5228 , H01L51/5234 , H01L2251/5315
摘要： It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film. Still further, the auxiliary electrode is overlapped with the second electrode by means of a second opening formed over the second insulating film.

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