专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明授权

US08144278B2 Optically compensated birefringence mode liquid crystal display device 有权
标题翻译：光学补偿双折射模式液晶显示装置
公开(公告)号：US08144278B2
公开(公告)日：2012-03-27
申请号：US10968454
申请日：2004-10-18
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： G02F1/136 , G09G5/02
CPC分类号： G09G3/3607 , G09G3/2011 , G09G3/2025 , G09G3/2081 , G09G3/3614 , G09G3/3648 , G09G3/3659 , G09G2300/0426 , G09G2300/043 , G09G2300/0478 , G09G2300/0491 , G09G2310/0251 , G09G2310/027 , G09G2310/0289 , G09G2320/0247 , G09G2320/0257 , H01L27/1222 , H01L27/124 , H01L27/1255 , H01L27/1285 , H01L29/78633 , H01L29/78675
摘要： An object of the present invention is to provide a small-sized active matrix type liquid crystal display device that may achieve large-sized display, high precision, high resolution and multi-gray scales.According to the present invention, gray scale display is performed by combining time ratio gray scale and voltage gray scale in a liquid crystal display device which performs display in OCB mode. In doing so, one frame is divided into subframes corresponding to the number of bit for the time ratio gray scale. Initialize voltage is applied onto the liquid crystal upon display of a subframe.
摘要翻译：本发明的目的是提供可以实现大尺寸显示，高精度，高分辨率和多灰度级的小尺寸有源矩阵型液晶显示装置。根据本发明，在以OCB模式执行显示的液晶显示装置中，通过组合时间比率灰度和电压灰度来执行灰度显示。在这样做时，一帧被划分为对应于时间比例灰度比特数的子帧。在子帧显示时，将初始化电压施加到液晶上。

102. 发明申请

US20120056862A1 DISPLAY DEVICE AND ELECTRONIC APPARATUS 审中-公开
标题翻译：显示设备和电子设备
公开(公告)号：US20120056862A1
公开(公告)日：2012-03-08
申请号：US13295284
申请日：2011-11-14
申请人： Shunpei Yamazaki , Jun Koyama , Yoshifumi Tanada , Mitsuaki Osame , Hajime Kimura , Ryota Fukumoto , Hiromi Yanai
发明人： Shunpei Yamazaki , Jun Koyama , Yoshifumi Tanada , Mitsuaki Osame , Hajime Kimura , Ryota Fukumoto , Hiromi Yanai
IPC分类号： G09G3/30 , G06F3/038
CPC分类号： G09G3/2077 , G09G3/2092 , G09G3/3275 , G09G2310/0259 , G09G2310/0275 , G09G2320/066 , G09G2330/021 , G09G2360/02 , G09G2360/144
摘要： To provide a display device whose display can be recognized even in dark places or under the strong outside light. The display device performs display by controlling the number of gray scales in accordance with the intensity of outside light, which means a display mode can be switched in accordance with the data to be displayed on the display screen. A video signal generation circuit is controlled in each display mode in such a manner that it directly outputs an input video signal with an analog value, outputs a signal with a binary digital value, or outputs a signal with a multivalued digital value. As a result, gray scales displayed in pixels are timely changed. Accordingly, clear images can be displayed while maintaining high visibility in various environments, in the wide range from, for example, dark places or indoors (e.g., under a fluorescent lighting) to outdoors (e.g., under the sunlight).
摘要翻译：为了提供一种显示装置，即使在黑暗的地方或在强烈的外部光线下也能够识别显示。显示装置通过根据外部光的强度控制灰度级数来进行显示，这意味着可以根据要在显示屏幕上显示的数据来切换显示模式。视频信号发生电路以每个显示模式被控制，使得它直接输出具有模拟值的输入视频信号，输出具有二进制数字值的信号，或输出具有多值数字值的信号。结果，以像素显示的灰度级是及时改变的。因此，可以在例如暗处或室内（例如，在荧光照明下）到户外（例如，在阳光下）的广泛范围内，在各种环境中保持高可见度的同时显示清晰的图像。

103. 发明申请

US20120051117A1 SIGNAL PROCESSING CIRCUIT AND METHOD FOR DRIVING THE SAME 有权
标题翻译：信号处理电路及其驱动方法
公开(公告)号：US20120051117A1
公开(公告)日：2012-03-01
申请号：US13215302
申请日：2011-08-23
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： G11C11/24
CPC分类号： G11C14/0054 , G11C14/00 , G11C14/0009 , H01L27/0629
摘要： An object is to provide a signal processing circuit which can be manufactured without a complex manufacturing process and suppress power consumption. A storage element includes two logic elements (referred to as a first phase-inversion element and a second phase-inversion element) which invert a phase of an input signal and output the signal, a first selection transistor, and a second selection transistor. In the storage element, two pairs each having a transistor in which a channel is formed in an oxide semiconductor layer and a capacitor (a pair of a first transistor and a first capacitor, and a pair of a second transistor and a second capacitor) are provided. The storage element is used in a storage device such as a register or a cache memory included in a signal processing circuit.
摘要翻译：本发明的目的是提供一种信号处理电路，其可以在没有复杂的制造工艺的情况下制造并且抑制功耗。存储元件包括反转输入信号的相位并输出信号的两个逻辑元件（称为第一相位反转元件和第二相位反转元件），第一选择晶体管和第二选择晶体管。在存储元件中，每个具有在氧化物半导体层中形成沟道的晶体管和电容器（一对第一晶体管和第一电容器，以及一对第二晶体管和第二电容器）的两对是提供。存储元件用于包括在信号处理电路中的寄存器或高速缓冲存储器等存储装置。

104. 发明申请

US20120043580A1 Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120043580A1
公开(公告)日：2012-02-23
申请号：US13286280
申请日：2011-11-01
申请人： Shunpei Yamazaki , Hideomi Suzawa , Yoshihiro Kusuyama , Koji Ono , Jun Koyama
发明人： Shunpei Yamazaki , Hideomi Suzawa , Yoshihiro Kusuyama , Koji Ono , Jun Koyama
IPC分类号： H01L33/62 , H01L21/336 , H01L29/772
CPC分类号： H01L21/4846 , G02F1/13454 , G02F1/13458 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L21/02367 , H01L27/12 , H01L27/124 , H01L27/1277 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627
摘要： There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.
摘要翻译：提供了即使在将显示区域的尺寸增加到大尺寸屏幕的情况下也实现低功耗的半导体器件的结构及其制造方法。像素部分中的栅电极形成为主要包含W的材料膜，主要包含Al的材料膜和主要包含Ti的材料膜以降低布线电阻的三层结构。使用IPC蚀刻装置蚀刻布线。栅电极为锥形，成为锥形的区域的宽度为1μm以上。

105. 发明申请

US20110317108A1 Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110317108A1
公开(公告)日：2011-12-29
申请号：US13225634
申请日：2011-09-06
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： G02F1/1335
CPC分类号： H01L21/32136 , G02F1/133512 , G02F1/136213 , G02F1/136227 , G02F2203/02 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78633
摘要： The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are arranged such that a pixel electrode overlaps with a portion of a gate wiring and a source wiring. In locations for shielding TFTs, a high pixel aperture ratio is realized by forming a color filter (red, or lamination of red and blue), formed on an opposing substrate.
摘要翻译：反射型显示装置的像素的开口率在不增加掩模的数量而不使用黑色掩模的情况下得到改善。在像素之间进行遮光的位置被布置成使得像素电极与栅极布线和源极布线的一部分重叠。在用于屏蔽TFT的位置中，通过形成在相对的基板上形成滤色器（红色或蓝色的叠层）来实现高像素孔径比。

106. 发明申请

US20110279441A1 Display Device and Driving Method of the Same, and Electronic Apparatus 有权
标题翻译：显示装置及其驱动方法及电子设备
公开(公告)号：US20110279441A1
公开(公告)日：2011-11-17
申请号：US13190598
申请日：2011-07-26
申请人： Masahiko Hayakawa , Yu Kojima , Yukari Ando , Keisuke Miyagawa , Jun Koyama , Mitsuaki Osame , Aya Anzai , Shunpei Yamazaki , Satoshi Seo , Hiroko Abe , Hajime Kimura
发明人： Masahiko Hayakawa , Yu Kojima , Yukari Ando , Keisuke Miyagawa , Jun Koyama , Mitsuaki Osame , Aya Anzai , Shunpei Yamazaki , Satoshi Seo , Hiroko Abe , Hajime Kimura
IPC分类号： G09G5/00 , G09G3/30
CPC分类号： G09G3/3216 , G09G3/2018 , G09G3/3283 , G09G3/3291 , G09G2300/0426 , G09G2320/0233 , G09G2320/029 , G09G2320/041 , G09G2320/043
摘要： The brightness of a light emitting element varies when changes in ambient temperature or changes with time occur. In view of this, the invention provides a display device where the influence of variations in the current value of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention includes a monitoring element that is driven with a constant current, and a voltage applied to the monitoring element is detected and inputted to a light emitting element. In other words, the monitoring element is driven with a low current, and a voltage applied to the monitoring element is inputted to the light emitting element such that the light emitting element is driven with a constant current.
摘要翻译：随着环境温度的变化或时间的变化，发光元件的亮度发生变化。鉴于此，本发明提供了一种显示装置，其中可以抑制由于环境温度的变化和随时间的变化而导致的发光元件的电流值的变化的影响。本发明的显示装置包括以恒定电流驱动的监视元件，并且检测施加到监视元件的电压并将其输入到发光元件。换句话说，监视元件以低电流驱动，并且施加到监视元件的电压被输入到发光元件，使得发光元件以恒定电流驱动。

107. 发明授权

US08030659B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08030659B2
公开(公告)日：2011-10-04
申请号：US12824747
申请日：2010-06-28
申请人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
发明人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
IPC分类号： H01L27/14
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
摘要翻译：本发明提供一种具有高操作性能和高可靠性的半导体器件。在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。结果，实现了具有小的截止电流值的TFT结构。在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

108. 发明授权

US08023042B2 Semiconductor device and method of manufacturing therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08023042B2
公开(公告)日：2011-09-20
申请号：US10913415
申请日：2004-08-09
申请人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado
发明人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado
IPC分类号： H01L21/00
CPC分类号： H01L27/1255 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136286 , G02F1/1368 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L29/78651 , H01L29/78675
摘要： In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.
摘要翻译：在有源矩阵型液晶显示装置中，其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上，提供了最佳的TFT结构，同时增加了像素矩阵电路的孔径比。存在这样的结构，其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT，以及n沟道TFT，其中不重叠的第四杂质区栅电极形成在像素矩阵电路中。形成在像素矩阵电路中的保持电容器由遮光膜，形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜，并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。

109. 发明授权

US08018412B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08018412B2
公开(公告)日：2011-09-13
申请号：US11729458
申请日：2007-03-29
申请人： Shunpei Yamazaki , Jun Koyama , Hirokazu Yamagata
发明人： Shunpei Yamazaki , Jun Koyama , Hirokazu Yamagata
IPC分类号： G09G3/36
CPC分类号： H01L29/78672 , G02F1/13454 , G02F2001/136222 , G09G3/3614 , G09G3/3648 , G09G3/3666 , G09G3/3677 , G09G3/3688 , G09G2300/0408 , G09G2310/027 , G09G2310/0289 , G09G2320/0209 , G09G2320/0219 , G09G2320/0233 , G09G2320/0247 , G09G2340/0435 , H01L27/1214 , H01L27/124 , H01L27/127
摘要： Display bright in contrast can be obtained without discrination and flicker in the display device of the direct vision type whose pixel pitches are short to 20 μm or less. A liquid crystal panel is driven through the frame inverse driving method, and the vertical frame frequency is set to 120 Hz or more. Also, each of the pixels is arranged to correspond to one of R, G and B of color filters disposed on a TFT substrate side.
摘要翻译：在像素间距短到20微米或更小的直视型显示装置中，可以获得对比度的明亮的显示，而不会发生抖动和闪烁。通过帧逆驱动方法驱动液晶面板，将垂直帧频设定为120Hz以上。此外，每个像素被布置为对应于设置在TFT基板侧上的滤色器的R，G和B中的一个。

110. 发明授权

US08008693B2 Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same 有权
标题翻译：半导体薄膜及其制造方法以及半导体装置及其制造方法
公开(公告)号：US08008693B2
公开(公告)日：2011-08-30
申请号：US11670462
申请日：2007-02-02
申请人： Shunpei Yamazaki , Jun Koyama , Akiharu Miyanaga , Takeshi Fukunaga
发明人： Shunpei Yamazaki , Jun Koyama , Akiharu Miyanaga , Takeshi Fukunaga
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/02672 , G02B27/017 , G02B2027/0138 , H01L21/02532 , H01L21/2022 , H01L21/8221 , H01L27/1277 , H01L29/045 , H01L29/665 , H01L29/66757 , H01L29/78621 , H01L29/78654 , H01L29/78675
摘要： A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.
摘要翻译：薄膜半导体晶体管结构具有具有电介质表面的基板和由半导体薄膜制成的有源层，其表现出与单晶相当的结晶度。为了制造晶体管，在衬底上形成半导体薄膜，该薄膜包括可以是基本上平行于衬底的柱状晶体和/或毛细晶体的多个晶体的混合物。然后在所选择的含有卤素的气氛中对所得结构进行热氧化，从而去除膜中所含的任何金属元素。这可以形成单畴区域，其中单个柱状或毛细晶体晶体与任何相邻晶体接触，并且其能够基本上被认为是单晶区域，而不存在或包含任何晶粒边界。该区域用于形成晶体管的有源层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式