专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明申请

US20110062433A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110062433A1
公开(公告)日：2011-03-17
申请号：US12880259
申请日：2010-09-13
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/12 , H01L21/16
CPC分类号： H01L29/7869 , H01L27/1225 , H01L2924/0002 , H01L2924/00
摘要： It is an object to provide a semiconductor device with less power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object to provide a semiconductor device with high reliability as a semiconductor device including a thin film transistor using an oxide semiconductor layer. In the semiconductor device, a gate electrode layer (a gate wiring layer) intersects with a wiring layer which is electrically connected to a source electrode layer or a drain electrode layer with an insulating layer which covers the oxide semiconductor layer of the thin film transistor and a gate insulating layer interposed therebetween. Accordingly, the parasitic capacitance formed by a stacked-layer structure of the gate electrode layer, the gate insulating layer, and the source or drain electrode layer can be reduced, so that low power consumption of the semiconductor device can be realized.
摘要翻译：本发明的目的是提供具有较少功耗的半导体器件作为包括使用氧化物半导体层的薄膜晶体管的半导体器件。本发明的目的是提供具有高可靠性的半导体器件作为包括使用氧化物半导体层的薄膜晶体管的半导体器件。在半导体装置中，栅电极层（栅极布线层）与与覆盖薄膜晶体管的氧化物半导体层的绝缘层电连接的源电极层或漏电极层的布线层相交叉，插入其间的栅极绝缘层。因此，可以减小由栅极层，栅极绝缘层和源极或漏极电极层的堆叠层结构形成的寄生电容，从而可以实现半导体器件的低功耗。

102. 发明申请

US20110031492A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20110031492A1
公开(公告)日：2011-02-10
申请号：US12848389
申请日：2010-08-02
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Miyuki HOSOBA , Tatsuya TAKAHASHI
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Miyuki HOSOBA , Tatsuya TAKAHASHI
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/3262 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/32 , H01L27/3248 , H01L29/45
摘要： The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.
摘要翻译：半导体器件包括驱动电路，该驱动电路包括第一薄膜晶体管和在一个衬底上包括第二薄膜晶体管的像素。第一薄膜晶体管包括第一栅极电极层，栅极绝缘层，第一氧化物半导体层，第一氧化物导电层，第二氧化物导电层，与第一氧化物半导体的一部分接触的氧化物绝缘层并且与第一和第二氧化物导电层的周边和侧表面接触，第一源极电极层和第一漏极电极层。第二薄膜晶体管包括使用透光材料形成的第二栅极电极层，第二氧化物半导体层以及第二源电极层和第二漏极电极层。

103. 发明申请

US20110031469A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110031469A1
公开(公告)日：2011-02-10
申请号：US12904313
申请日：2010-10-14
申请人： Shunpei YAMAZAKI , Hiroko ABE , Yukie NEMOTO , Ryoji NOMURA , Mikio YUKAWA
发明人： Shunpei YAMAZAKI , Hiroko ABE , Yukie NEMOTO , Ryoji NOMURA , Mikio YUKAWA
IPC分类号： H01L45/00 , H01L29/786
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
摘要翻译：本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作天线。存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

104. 发明申请

US20110024750A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110024750A1
公开(公告)日：2011-02-03
申请号：US12846534
申请日：2010-07-29
申请人： Shunpei YAMAZAKI , Hiroki OHARA , Toshinari SASAKI , Kosei NODA , Hideaki KUWABARA
发明人： Shunpei YAMAZAKI , Hiroki OHARA , Toshinari SASAKI , Kosei NODA , Hideaki KUWABARA
IPC分类号： H01L29/786 , H01L21/34 , H01L29/772 , H01L21/84
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/1337 , G02F1/134309 , G02F1/136227 , G02F1/136277 , G02F1/1368 , H01L27/1214 , H01L27/124 , H01L27/1248 , H01L29/24 , H01L29/517 , H01L29/78609 , H01L29/7869
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
摘要翻译：目的在于提供一种半导体器件，其具有可以充分降低布线之间的寄生电容的结构。用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上。在与氧化物绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的周边部分的氧化物绝缘层。设置覆盖氧化物半导体层的周边部分的氧化物绝缘层以增加栅极电极层与形成在栅电极层的上方或周围的布线层之间的距离，从而降低寄生电容。

105. 发明申请

US20110024740A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110024740A1
公开(公告)日：2011-02-03
申请号：US12846572
申请日：2010-07-29
申请人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Junichiro SAKATA
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Junichiro SAKATA
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/78696 , H01L27/1225 , H01L29/7869
摘要： A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.
摘要翻译：提供具有能够充分降低寄生电容的结构的半导体器件。此外，提高了驱动电路中薄膜晶体管的操作速度。在其中氧化物绝缘层与氧化物半导体层中的沟道形成区域接触的底栅极薄膜晶体管中，以与栅极薄膜晶体管不重叠的方式形成源电极层和漏电极层，栅电极层。因此，栅极电极层与源电极层之间以及栅极电极层和漏极电极层之间的距离增加; 因此，可以减小寄生电容。

106. 发明申请

US20110012118A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110012118A1
公开(公告)日：2011-01-20
申请号：US12835907
申请日：2010-07-14
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Hideki UOCHI
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Hideki UOCHI
IPC分类号： H01L27/12 , H01L29/786 , H01L21/84
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/45
摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。用于驱动电路的薄膜晶体管的源极和漏极由金属形成。使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。

107. 发明申请

US20110003428A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110003428A1
公开(公告)日：2011-01-06
申请号：US12826015
申请日：2010-06-29
申请人： Toshinari SASAKI , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
发明人： Toshinari SASAKI , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
IPC分类号： H01L21/16
CPC分类号： H01L29/66969 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42356 , H01L29/42384 , H01L29/66742 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
摘要翻译：本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。在包括薄膜晶体管的半导体器件的制造方法中，使用氧化物半导体层形成具有沟道形成区域，源极区域和漏极区域的半导体层，进行热处理（脱水或脱氢的热处理）以提高氧化物半导体层的纯度并减少诸如水分的杂质。此外，在氧气氛下缓慢冷却经受热处理的氧化物半导体层。

108. 发明申请

US20100327351A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100327351A1
公开(公告)日：2010-12-30
申请号：US12821477
申请日：2010-06-23
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L29/78 , H01L21/336
CPC分类号： H01L21/84 , H01L21/28052 , H01L21/76895 , H01L27/1203 , H01L29/665 , H01L29/6653
摘要： An object is to reduce the resistance of each member included in a transistor, to improve ON current of the transistor, and to improve performance of an integrated circuit. A semiconductor device including an n-channel FET and a p-channel FET which are provided over a single crystal semiconductor substrate with an insulating layer provided therebetween and are isolated by an element isolation insulating layer. In the semiconductor device, each FET includes a channel formation region including a semiconductor material, a conductive region which is in contact with the channel formation region and includes the semiconductor material, a metal region in contact with the conductive region, a gate insulating layer in contact with the channel formation region, a gate electrode in contact with the gate insulating layer, and a source or drain electrode partly including the metal region.
摘要翻译：目的是降低晶体管中包括的每个元件的电阻，以提高晶体管的导通电流，并提高集成电路的性能。一种包括n沟道FET和p沟道FET的半导体器件，其设置在单晶半导体衬底上，其间设置有绝缘层，并通过元件隔离绝缘层隔离。在半导体装置中，每个FET包括：包含半导体材料的沟道形成区域，与沟道形成区域接触并包括半导体材料的导电区域，与导电区域接触的金属区域，栅极绝缘层与沟道形成区域接触，与栅极绝缘层接触的栅极电极和部分地包括金属区域的源极或漏极电极。

109. 发明申请

US20100307590A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20100307590A1
公开(公告)日：2010-12-09
申请号：US12792175
申请日：2010-06-02
申请人： Shunpei YAMAZAKI , Kazuo NISHI
发明人： Shunpei YAMAZAKI , Kazuo NISHI
IPC分类号： H01L31/00
CPC分类号： H01L31/1884 , C23C14/0676 , H01L31/022466 , H01L31/022483 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/076 , H01L31/077 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The present invention provides a technique in which a cheap zinc oxide material can be used as a light-transmitting conductive film of a photoelectric conversion device. The present invention is a photoelectric conversion device including, between a first electrode and a second electrode, at least one unit cell in which a first impurity semiconductor layer having one conductivity type, a semiconductor layer, and a second impurity semiconductor layer having a conductivity type opposite to the first impurity semiconductor layer are sequentially stacked and a semiconductor junction is included. The first electrode or the second electrode includes conductive oxynitride containing zinc and aluminum. In the conductive oxynitride containing zinc and aluminum: the relative proportion of the zinc is less than or equal to 47 at. % and higher than that of the aluminum; and the relative proportion of the aluminum is higher than that of nitrogen.
摘要翻译：本发明提供了可以使用便宜的氧化锌材料作为光电转换装置的透光导电膜的技术。本发明是一种光电转换装置，在第一电极和第二电极之间包括至少一个单元电池，其中具有一种导电类型的第一杂质半导体层，半导体层和具有导电类型的第二杂质半导体层与第一杂质半导体层相对的顺序堆叠并且包括半导体结。第一电极或第二电极包括含有锌和铝的导电氮氧化物。在含有锌和铝的导电氮氧化物中：锌的相对比例小于或等于47at。％以上; 铝的相对比例高于氮。

110. 发明申请

US20100307559A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100307559A1
公开(公告)日：2010-12-09
申请号：US12793329
申请日：2010-06-03
申请人： Shunpei YAMAZAKI , Yukie SUZUKI , Kazuo NISHI , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Yukie SUZUKI , Kazuo NISHI , Yasuyuki ARAI
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/1896 , H01L31/043 , H01L31/046 , H01L31/0465 , H01L31/048 , H01L2924/0002 , H01L2924/09701 , H02S40/38 , Y02E10/50 , H01L2924/00
摘要： An object is to provide a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process. The photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body which firmly attaches the first cell and the second cell. As a result, p-i-n junctions are bonded with the structure body in which the fibrous body is impregnated with an organic resin, which is a so-called prepreg. Thus, a photoelectric conversion device whose mechanical strength is increased can be realized while the manufacturing cost is reduced.
摘要翻译：本发明的目的是提供一种其机械强度增加而不会使制造过程复杂化的光电转换装置。光电转换装置包括具有光电转换功能的第一单元，具有光电转换功能的第二单元，以及包括牢固地附接第一单元和第二单元的纤维体的结构体。结果，p-i-n结与其中纤维体被浸渍有机树脂的结构体结合，所述有机树脂是所谓的预浸料。因此，可以实现机械强度提高的光电转换装置，同时降低制造成本。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式