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101. 发明授权

US5552911A Color liquid crystal display device having varying cell thickness and varying pixel areas 失效
标题翻译：具有变化的单元厚度和变化的像素区域的彩色液晶显示装置
公开(公告)号：US5552911A
公开(公告)日：1996-09-03
申请号：US136268
申请日：1993-10-15
申请人： Shinjiro Okada , Yutaka Inaba , Makoto Kojima , Kazunori Katakura
发明人： Shinjiro Okada , Yutaka Inaba , Makoto Kojima , Kazunori Katakura
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/1343
CPC分类号： G02F1/133514 , G02F1/134336 , G02F1/133371 , G02F2203/30
摘要： A liquid crystal display device is constituted by a pair of electrode plates each having a plurality of elongated electrodes, and a layer of ferroelectric liquid crystal disposed between the electrode plates so as to form a pixel at each intersection of elongated electrodes disposed respectively on the pair of electrodes plates. At least one electrode plate is provided with an unevenness at each pixel so as to form a cell thickness gradient within each pixel, and at least one electrode plate is provided with at least three types of color filters each corresponding to a pixel. Further, each color filter and/or each pixel is set to have an area and/or a shape varying depending on a local cell thickness so that light quantities or sensible light quantities transmitted through the respective filters and the liquid crystal layer are identical to each other regardless of the type of color filter. A similar pixel pattern deformation is effective for providing a linear T (transmittance)--log V (voltage) characteristic. Color pixels pattern deformation may preferably be effected in a complementary manner with respect to different colors.
摘要翻译：液晶显示装置由一对电极板构成，每对电极板具有多个细长电极，并且在电极板之间设置有一层铁电液晶，以便在分别设置在该对电极板上的细长电极的每个交点处形成像素的电极板。至少一个电极板在每个像素处具有不平坦度，以便在每个像素内形成单元厚度梯度，并且至少一个电极板设置有至少三种类型的滤色器，每种滤色器对应于像素。此外，每个滤色器和/或每个像素被设置为具有根据局部单元厚度而变化的面积和/或形状，使得透过各个滤光器和液晶层的光量或感光量与每个滤色器和液晶层相同其他不管类型的滤色片。类似的像素图案变形对于提供线性T（透射率）-log V（电压）特性是有效的。颜色像素图案变形优选地可以相对于不同的颜色以互补的方式实现。

102. 发明授权

US5550775A Semiconductor device for generating high voltage potentials 失效
标题翻译：用于产生高电压电位的半导体器件
公开(公告)号：US5550775A
公开(公告)日：1996-08-27
申请号：US361551
申请日：1994-12-22
申请人： Wataru Abe , Akihiro Yamamoto , Takehiko Nakajima , Makoto Kojima
发明人： Wataru Abe , Akihiro Yamamoto , Takehiko Nakajima , Makoto Kojima
IPC分类号： G11C11/407 , G11C5/14 , G11C8/08 , H03K17/06 , G11C7/00 , H03K4/58
CPC分类号： H03K17/063 , G11C5/145 , G11C8/08
摘要： A semiconductor device comprises: a signal of high voltage not less than the power voltage; a first transistor for transmitting the high voltage signal; a second transistor for electrically charging and discharging the gate potential of the first transistor; and a circuit for generating a pulse signal of which "H" level is a voltage higher than the power voltage by the threshold voltage of the second transistor. The pulse signal generating circuit is connected to the gate electrode of the second transistor. This cancels the drop of a voltage corresponding to the threshold voltage generated at the time when the electric charge is transferred to the gate electrode of the first transistor. Accordingly, even though the power voltage is low, a high voltage signal can be transferred through the first transistor and the word line potential can be boosted to a voltage not less than the power voltage.
摘要翻译：半导体器件包括：不小于电源电压的高电压信号; 用于发送高电压信号的第一晶体管; 用于对第一晶体管的栅极电位进行充电和放电的第二晶体管; 以及电路，用于产生“H”电平是比第二晶体管的阈值电压高于电源电压的电压的脉冲信号。脉冲信号发生电路连接到第二晶体管的栅电极。这取消了与将电荷转移到第一晶体管的栅电极时产生的阈值电压相对应的电压的下降。因此，即使电源电压低，可以通过第一晶体管传输高电压信号，并且可以将字线电位升高到不低于电源电压的电压。

103. 发明授权

US5198996A Semiconductor non-volatile memory device 失效
标题翻译：半导体非易失性存储器件
公开(公告)号：US5198996A
公开(公告)日：1993-03-30
申请号：US866877
申请日：1992-04-10
申请人： Makoto Kojima , Takashi Takata
发明人： Makoto Kojima , Takashi Takata
IPC分类号： G11C16/04 , G11C16/10 , G11C16/14 , G11C16/26 , G11C17/12 , H01L29/792
CPC分类号： H01L29/792 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C17/123
摘要： A semiconductor non-volatile memory device, has plural data storage parts which are connected in series between the source region and drain region. In such a constitution, when integrating the semiconductors, the relative area occupied by the selection gate, separation gate, source region and drain region of the area of the data storage parts may be drastically reduced, and the degree of integration of the semiconductor non-volatile memory device can be dramatically enhanced. The device also allows for setting the semiconductor substrate in a depletion state by sequentially varying the gate potential of the plural data storage parts and transferring the electric charges sequentially. By this transferring of electric charges, data write errors may be prevented.
摘要翻译：半导体非易失性存储器件具有多个数据存储部件，其串联连接在源极区域和漏极区域之间。在这样构成的情况下，在对半导体进行积分的情况下，数据存储部的面积的选择栅极，分离栅极，源极区域和漏极区域所占的相对面积可以大幅度降低，易失性存储器件可以显着增强。该器件还允许通过依次改变多个数据存储部件的栅极电位并依次传送电荷来将半导体衬底设置为耗尽状态。通过这种电荷转移，可以防止数据写入错误。

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