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101. 发明授权

US08217446B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08217446B2
公开(公告)日：2012-07-10
申请号：US12559865
申请日：2009-09-15
申请人： Yoshiaki Fukuzumi , Masaru Kito , Ryota Katsumata , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi
发明人： Yoshiaki Fukuzumi , Masaru Kito , Ryota Katsumata , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L27/11578 , H01L21/28282 , H01L27/11582 , H01L29/66833 , H01L29/792 , H01L29/7926
摘要： Each of memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate; a charge storage layer formed to surround a side surface of the columnar portions; and a first conductive layer formed to surround the charge storage layer. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; a gate insulating layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the gate insulating layer. An effective impurity concentration of the second semiconductor layer is less than or equal to an effective impurity concentration of the first semiconductor layer.
摘要翻译：每个存储器串都具有第一半导体层，该第一半导体层具有相对于衬底在垂直方向上延伸的一对柱状部分; 形成为围绕所述柱状部的侧面的电荷存储层; 以及形成为围绕电荷存储层的第一导电层。每个选择晶体管设置有从柱状部分的上表面向上延伸的第二半导体层; 形成为围绕所述第二半导体层的侧表面的栅极绝缘层; 以及形成为围绕所述栅极绝缘层的第二导电层。第二半导体层的有效杂质浓度小于或等于第一半导体层的有效杂质浓度。

102. 发明授权

US08198667B2 Semiconductor memory device and method for manufacturing same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08198667B2
公开(公告)日：2012-06-12
申请号：US12808321
申请日：2008-12-25
申请人： Takuji Kuniya , Yosuke Komori , Ryota Katsumata , Yoshiaki Fukuzumi , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Hideaki Aochi
发明人： Takuji Kuniya , Yosuke Komori , Ryota Katsumata , Yoshiaki Fukuzumi , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Hideaki Aochi
IPC分类号： H01L27/115 , H01L21/8247 , H01L29/792 , H01L29/788
CPC分类号： H01L29/792 , H01L27/115 , H01L27/11556 , H01L27/11568 , H01L29/66833 , H01L29/7926
摘要： A laminated body is formed by alternately laminating a plurality of dielectric films and electrode films on a silicon substrate. Next, a through hole extending in the lamination direction is formed in the laminated body. Next, a selective nitridation process is performed to selectively form a charge layer made of silicon nitride in a region of an inner surface of the through hole corresponding to the electrode film. Next, a high-pressure oxidation process is performed to form a block layer made of silicon oxide between the charge layer and the electrode film. Next, a tunnel layer made of silicon oxide is formed on an inner side surface of the through hole. Thus, a flash memory can be manufactured in which the charge layer is split for each electrode film.
摘要翻译：通过在硅衬底上交替层叠多个电介质膜和电极膜来形成层叠体。接下来，在层叠体中形成在层叠方向上延伸的贯通孔。接下来，进行选择性氮化处理，以在对应于电极膜的通孔的内表面的区域中选择性地形成由氮化硅制成的电荷层。接下来，进行高压氧化处理以在电荷层和电极膜之间形成由氧化硅制成的阻挡层。接下来，在通孔的内侧表面上形成由氧化硅制成的隧道层。因此，可以制造其中为每个电极膜分裂电荷层的快闪存储器。

103. 发明授权

US08154068B2 Non-volatile semiconductor storage device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储装置及其制造方法
公开(公告)号：US08154068B2
公开(公告)日：2012-04-10
申请号：US12647836
申请日：2009-12-28
申请人： Ryota Katsumata , Hideaki Aochi , Masaru Kito , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Masaru Kidoh , Yoshiaki Fukuzumi
发明人： Ryota Katsumata , Hideaki Aochi , Masaru Kito , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Masaru Kidoh , Yoshiaki Fukuzumi
IPC分类号： H01L29/76
CPC分类号： H01L27/11578 , H01L27/0688 , H01L27/11582 , H01L29/66833 , H01L29/792 , H01L29/7926
摘要： Each of memory strings comprising: a first semiconductor layer having a pair of columnar portions extending in a vertical direction to a substrate and a joining portion formed to join lower ends of the pair of columnar portions; an electric charge accumulation layer formed to surround a side surface of the first semiconductor layer; and a first conductive layer formed to surround a side surface of the electric charge accumulation layer. The columnar portions are aligned at a first pitch in a first direction orthogonal to the vertical direction, and arranged in a staggered pattern at a second pitch in a second direction orthogonal to the vertical and first directions. The first conductive layers are configured to be arranged at the first pitch in the first direction, and extend to curve in a wave-like fashion in the second direction along the staggered-pattern arrangement.
摘要翻译：每个存储串包括：第一半导体层，具有在垂直方向上延伸到基板的一对柱状部分和形成为连接该一对柱状部分的下端的接合部分; 形成为包围第一半导体层的侧面的电荷蓄积层; 以及形成为围绕电荷蓄积层的侧表面的第一导电层。柱状部分在垂直于垂直方向的第一方向上以第一间距排列，并且在垂直于垂直方向和第一方向的第二方向上以第二间距布置成交错图案。第一导电层被配置为沿着第一方向以第一间距布置，并且沿着交错图案布置在第二方向上以波浪形的方式延伸。

104. 发明授权

US08048798B2 Method for manufacturing a nonvolatile semiconductor storage device where memory cells are arranged three dimensionally 有权
标题翻译：用于制造三维排列存储单元的非易失性半导体存储装置的方法
公开(公告)号：US08048798B2
公开(公告)日：2011-11-01
申请号：US12389977
申请日：2009-02-20
申请人： Masaru Kidoh , Masaru Kito , Ryota Katsumata , Yoshiaki Fukuzumi , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi , Yasuyuki Matsuoka
发明人： Masaru Kidoh , Masaru Kito , Ryota Katsumata , Yoshiaki Fukuzumi , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi , Yasuyuki Matsuoka
IPC分类号： H01L21/4763
CPC分类号： H01L27/11578 , H01L21/8221 , H01L27/11573 , H01L27/11575 , H01L27/11582
摘要： A method for manufacturing a nonvolatile semiconductor storage device, including: forming a first conductive layer so that it is sandwiched in an up-down direction by first insulating layers; forming a first hole so that it penetrates the first insulating layers and the first conductive layer; forming a first side wall insulating layer on a side wall facing the first hole; forming a sacrificing layer so that the sacrificing layer infills the first hole; forming a second conductive layer on an upper layer of the sacrificing layer so that the second conductive layer is sandwiched by the second insulating layer in an up-down direction; forming a second hole on a position which matches with the first hole so that the second hole penetrates the second insulating layer and the second conductive layer; forming a second side wall insulating layer on a side wall facing the second hole; removing the sacrificing layer after the formation of the second side wall insulating layer; and forming a semiconductor layer so that the semiconductor layer infills the first hole and the second hole after the removal of the sacrificing layer.
摘要翻译：一种制造非易失性半导体存储装置的方法，包括：形成第一导电层，使其通过第一绝缘层沿上下方向夹持; 形成第一孔，使其穿透第一绝缘层和第一导电层; 在面向所述第一孔的侧壁上形成第一侧壁绝缘层; 形成牺牲层，使牺牲层填充第一孔; 在牺牲层的上层上形成第二导电层，使得第二导电层在上下方向上被第二绝缘层夹持; 在与所述第一孔匹配的位置上形成第二孔，使得所述第二孔穿过所述第二绝缘层和所述第二导电层; 在面向所述第二孔的侧壁上形成第二侧壁绝缘层; 在形成第二侧壁绝缘层之后去除牺牲层; 以及形成半导体层，使得半导体层在去除牺牲层之后填充第一孔和第二孔。

105. 发明授权

US08013383B2 Nonvolatile semiconductor storage device including a plurality of memory strings 有权
标题翻译：包括多个存储器串的非易失性半导体存储装置
公开(公告)号：US08013383B2
公开(公告)日：2011-09-06
申请号：US12389856
申请日：2009-02-20
申请人： Masaru Kidoh , Masaru Kito , Ryota Katsumata , Yoshiaki Fukuzumi , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi , Akihiro Nitayama , Hitoshi Ito , Yasuyuki Matsuoka
发明人： Masaru Kidoh , Masaru Kito , Ryota Katsumata , Yoshiaki Fukuzumi , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi , Akihiro Nitayama , Hitoshi Ito , Yasuyuki Matsuoka
IPC分类号： H01L29/792
CPC分类号： H01L27/105 , H01L27/0688 , H01L27/11575 , H01L27/11578 , H01L27/11582
摘要： A nonvolatile semiconductor storage device has a plurality of memory strings in which a plurality of electrically rewritable memory cells are connected in series. The memory string has a columnar semiconductor layer extending in a direction perpendicular to a substrate; a conductive layer formed so as to sandwich a charge storing layer in cooperation with the columnar semiconductor layer; and a metal layer formed so as to be in contact with the top face of the conductive layer.
摘要翻译：非易失性半导体存储装置具有串联连接多个电可重写存储单元的多个存储串。存储器串具有在垂直于衬底的方向上延伸的柱状半导体层; 形成为与柱状半导体层配合地夹着电荷存储层的导电层; 以及形成为与导电层的顶面接触的金属层。

106. 发明授权

US07977748B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07977748B2
公开(公告)日：2011-07-12
申请号：US12850783
申请日：2010-08-05
申请人： Masaru Kito , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh
发明人： Masaru Kito , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh
IPC分类号： H01L27/12
CPC分类号： H01L27/0605 , H01L21/8221 , H01L21/84 , H01L27/12
摘要： A semiconductor device having a first semiconductor region and second semiconductor region including impurities formed on an insulating layer formed on a semiconductor substrate, an insulator formed between the first semiconductor region and the second semiconductor region, a first impurity diffusion control film formed on the first semiconductor region and a second impurity diffusion control film formed on the second semiconductor region, a channel layer formed on the first impurity diffusion control film and second impurity diffusion film to cross at right angles with a direction where the first semiconductor region and the second semiconductor region are extended, a gate insulating film formed on the channel layer and a gate electrode formed on the gate insulating layer.
摘要翻译：一种具有第一半导体区域和第二半导体区域的半导体器件，所述第二半导体区域包括形成在形成于半导体衬底上的绝缘层上的杂质，形成在所述第一半导体区域和所述第二半导体区域之间的绝缘体，形成在所述第一半导体区域和形成在第二半导体区域上的第二杂质扩散控制膜，形成在第一杂质扩散控制膜和第二杂质扩散膜上的沟道层，以与第一半导体区域和第二半导体区域的方向成直角交叉扩展了形成在沟道层上的栅极绝缘膜和形成在栅极绝缘层上的栅电极。

107. 发明申请

US20110147818A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20110147818A1
公开(公告)日：2011-06-23
申请号：US12717499
申请日：2010-03-04
申请人： Ryota KATSUMATA , Yoshiaki Fukuzumi , Masaru Kidoh , Masaru Kito , Hideaki Aochi
发明人： Ryota KATSUMATA , Yoshiaki Fukuzumi , Masaru Kidoh , Masaru Kito , Hideaki Aochi
IPC分类号： H01L27/105
CPC分类号： H01L27/11578 , H01L27/11573 , H01L27/11575 , H01L27/11582 , H01L29/792
摘要： A nonvolatile semiconductor memory device includes: a substrate; a memory multilayer body with a plurality of insulating films and electrode films alternately stacked therein, the memory multilayer body being provided on a memory array region of the substrate; a semiconductor pillar buried in the memory multilayer body and extending in stacking direction of the insulating films and the electrode films; a charge storage film provided between one of the electrode films and the semiconductor pillar; a dummy multilayer body with a plurality of the insulating films and the electrode films alternately stacked therein and a dummy hole formed therein, the dummy multilayer body being provided on a peripheral circuit region of the substrate; an insulating member buried in the dummy hole; and a contact buried in the insulating member and extending in the stacking direction.
摘要翻译：非易失性半导体存储器件包括：衬底; 具有交替堆叠的多个绝缘膜和电极膜的存储器多层体，所述存储器多层体设置在所述衬底的存储器阵列区域上; 埋入存储器多层体中并在绝缘膜和电极膜的堆叠方向上延伸的半导体柱; 设置在所述电极膜和所述半导体柱之间的电荷存储膜; 具有多个绝缘膜和电极膜交替堆叠的虚设多层体和形成在其中的虚拟孔，所述虚设多层体设置在所述基板的外围电路区域上; 埋在虚拟孔中的绝缘构件; 以及埋入绝缘构件中并沿堆叠方向延伸的触点。

108. 发明授权

US07910432B2 Non-volatile semiconductor storage device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储装置及其制造方法
公开(公告)号：US07910432B2
公开(公告)日：2011-03-22
申请号：US12393509
申请日：2009-02-26
申请人： Hiroyasu Tanaka , Masaru Kidoh , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Hideaki Aochi , Yasuyuki Matsuoka
发明人： Hiroyasu Tanaka , Masaru Kidoh , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Hideaki Aochi , Yasuyuki Matsuoka
IPC分类号： H01L21/336
CPC分类号： H01L27/11578 , H01L27/11582
摘要： Each of the memory strings includes: a first columnar semiconductor layer extending in a vertical direction to a substrate; a plurality of first conductive layers formed to sandwich an insulation layer with a charge trap layer and expand in a two-dimensional manner; a second columnar semiconductor layer formed in contact with the top surface of the first columnar semiconductor layer and extending in a vertical direction to the substrate; and a plurality of second conductive layers formed to sandwich an insulation layer with the second columnar semiconductor layer and formed in a stripe pattern extending in a first direction orthogonal to the vertical direction. Respective ends of the plurality of first conductive layers in the first direction are formed in a stepwise manner in relation to each other, entirety of the plurality of the second conductive layers are formed in an area immediately above the top layer of the first conductive layers, and the plurality of first conductive layers and the plurality of second conductive layers are covered with a protection insulation layer that is formed continuously with the plurality of first conductive layers and the second conductive layers.
摘要翻译：每个存储器串包括：在垂直方向上延伸到衬底的第一柱状半导体层; 多个第一导电层，其形成为夹着具有电荷陷阱层的绝缘层并以二维方式扩展; 第二柱状半导体层，其与所述第一柱状半导体层的顶表面接触并且在垂直方向上延伸到所述衬底; 以及多个第二导电层，其形成为与第二柱状半导体层夹着绝缘层，并且形成为沿与垂直方向正交的第一方向延伸的条纹图案。多个第一导电层的第一方向的端部相对于彼此分步地形成，多个第二导电层的整体形成在第一导电层的顶层的正上方的区域中，并且多个第一导电层和多个第二导电层被与多个第一导电层和第二导电层连续形成的保护绝缘层覆盖。

109. 发明授权

US07902591B2 Non-volatile semiconductor storage device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07902591B2
公开(公告)日：2011-03-08
申请号：US12244989
申请日：2008-10-03
申请人： Masaru Kito , Ryota Katsumata , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Hideaki Aochi , Yasuyuki Matsuoka
发明人： Masaru Kito , Ryota Katsumata , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Hideaki Aochi , Yasuyuki Matsuoka
IPC分类号： H01L29/792
CPC分类号： H01L27/11578 , H01L21/8221 , H01L27/0688 , H01L27/11573 , H01L27/11582 , H01L29/66833 , H01L29/7923 , H01L29/7926
摘要： A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a memory columnar semiconductor extending in a direction perpendicular to a substrate; a tunnel insulation layer contacting the memory columnar semiconductor; a charge accumulation layer contacting the tunnel insulation layer and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of memory conductive layers contacting the block insulation layer. The lower portion of the charge accumulation layer is covered by the tunnel insulation layer and the block insulation layer.
摘要翻译：非易失性半导体存储装置具有多个具有串联连接的多个电可重写存储单元的存储器串。每个存储器串包括：在垂直于衬底的方向上延伸的存储器柱状半导体; 与记录柱状半导体接触的隧道绝缘层; 与隧道绝缘层接触并积累电荷的电荷累积层; 与电荷累积层接触的块绝缘层; 以及与块绝缘层接触的多个存储器导电层。电荷累积层的下部被隧道绝缘层和块绝缘层覆盖。

110. 发明申请

US20110033995A1 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非挥发性半导体存储器件及其制造方法
公开(公告)号：US20110033995A1
公开(公告)日：2011-02-10
申请号：US12908546
申请日：2010-10-20
申请人： Ryota KATSUMATA , Masaru Kito , Hiroyasu Tanaka , Masaru Kidoh , Yoshiaki Fukuzumi , Hideaki Aochi , Yasuyuki Matsuoka
发明人： Ryota KATSUMATA , Masaru Kito , Hiroyasu Tanaka , Masaru Kidoh , Yoshiaki Fukuzumi , Hideaki Aochi , Yasuyuki Matsuoka
IPC分类号： H01L21/336
CPC分类号： H01L21/764 , H01L27/11551 , H01L27/11556 , H01L27/11575 , H01L27/11578
摘要： A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings comprises: a first columnar semiconductor layer extending in a vertical direction to a substrate; a charge accumulation layer formed around the first columnar semiconductor layer via a first insulation layer; and a first conductive layer formed around the charge accumulation layer via a second insulation layer. Each of the first conductive layers is formed to expand in a two-dimensional manner, and air gaps are formed between the first conductive layers located there above and there below.
摘要翻译：非易失性半导体存储装置具有多个具有串联连接的多个电可重写存储单元的存储器串。每个存储器串包括：沿垂直方向延伸到衬底的第一柱状半导体层; 电荷累积层，经由第一绝缘层形成在第一柱状半导体层周围; 以及经由第二绝缘层形成在电荷累积层周围的第一导电层。每个第一导电层被形成为以二维方式膨胀，并且在位于其上方和下方的第一导电层之间形成气隙。

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