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101. 发明授权

US4608465A Keyboard 失效
标题翻译：键盘
公开(公告)号：US4608465A
公开(公告)日：1986-08-26
申请号：US750999
申请日：1985-07-02
申请人： Yuji Harada
发明人： Yuji Harada
IPC分类号： H01H13/12 , H01H13/70
CPC分类号： H01H13/7006 , H01H2207/022 , H01H2209/002 , H01H2209/004 , H01H2209/016 , H01H2215/036
摘要： A keyboard switch has a decoration sheet disposed above a printed circuit board in spaced relation thereto so that a flexible contact disposed between the printed circuit board and the decoration sheet can be moved into and out of contact with the printed circuit board by the depression of the decoration sheet. The decoration sheet is made of a material having a low extensibility, with recessed deforming areas that also serve as key symbols formed integrally with the decoration sheet.
摘要翻译：键盘开关具有布置在印刷电路板上方的间隔关系的装饰片，使得布置在印刷电路板和装饰片之间的柔性接触可以通过凹陷的印刷电路板移动进入和脱离与印刷电路板的接触装饰板。装饰片由具有低延展性的材料制成，还具有与装饰片一体形成的关键符号的凹陷变形区域。

102. 发明授权

US4180711A Desk-top calculator keyboard switch 失效
标题翻译：台式计算器键盘开关
公开(公告)号：US4180711A
公开(公告)日：1979-12-25
申请号：US833344
申请日：1977-09-14
申请人： Osamu Hirata , Yuji Harada
发明人： Osamu Hirata , Yuji Harada
IPC分类号： H01H13/76 , G06F3/02 , G06F15/02 , H01H13/702 , H01H13/785 , H01H13/70 , H01H1/02 , H05K1/00
CPC分类号： H01H13/785 , H01H13/702 , H01H2201/03 , H01H2207/026 , H01H2229/004 , H01H2231/002
摘要： An electronic desk-top calculator includes a bottom casing for the calculator on the inner surface of which bottom casing there are provided fixed contacts, and a flexible plate having thereon pairs of contacts provided with wiring conductors therefor. These pairs of contacts are so arranged at the positions in registry with the fixed contacts as to form a matrix. The fixed contacts act as bridging contacts and comprise electrically conductive material containing carbon particles. The pairs of contacts and wiring conductors have a first electrically conductive layer. An insulative layer of moisture-resistive material overlies the first conductive layer except those terminal ends of the wiring conductor which serve as contacts or electrical connectors. The exposed portions of the first conductive layer which function as switch contacts have an additional layer of electrically conductive material containing carbon particles.
摘要翻译：一种电子桌面计算器，包括一个用于计算器的底部壳体，其内表面具有底部壳体，该底部壳体设置有固定的触点，以及一个柔性板，在其上具有设置有布线导体的触点对。这些触点对被布置在与固定触点对准的位置处以形成矩阵。固定触点用作桥接触点并且包括含有碳颗粒的导电材料。该对触点和布线导体具有第一导电层。绝缘层的防潮材料覆盖在作为触点或电连接器的布线导体的那些末端之外的第一导电层。用作开关触点的第一导电层的暴露部分具有含有碳颗粒的另外的导电材料层。

103. 发明授权

US09086628B2 Resist protective film-forming composition and patterning process 有权
标题翻译：抗蚀保护膜形成组合物和图案化工艺
公开(公告)号：US09086628B2
公开(公告)日：2015-07-21
申请号：US13599669
申请日：2012-08-30
申请人： Yuuki Suka , Koji Hasegawa , Yuji Harada
发明人： Yuuki Suka , Koji Hasegawa , Yuji Harada
IPC分类号： G03F7/004 , G03F7/11 , C08K5/04 , G03F7/20
CPC分类号： G03F7/11 , C08K5/04 , G03F7/0046 , G03F7/2041 , C08L33/14
摘要： A protective film-forming composition comprising a polymer comprising fluorinated alcohol units of the structure: —C(CF3)2OR1 wherein R1 is H or a monovalent hydrocarbon group and having a Mw of 1,000-500,000 is applied onto a resist film to form a protective film thereon. The protective film-forming composition has high water repellent and water slip performance. The protective film exhibits barrier properties to water and prevents any resist components from being leached out in water.
摘要翻译：一种保护膜形成组合物，其包含以下结构的包含以下结构的氟化醇单元的聚合物：-C（CF 3）2 OR 1，其中R 1为H或一价烃基并具有1,000-500,000的Mw，以形成保护膜膜上。保护膜形成组合物具有高的防水性和防水性能。保护膜表现出对水的阻挡性能，并防止任何抗蚀剂组分在水中浸出。

104. 发明授权

US08323872B2 Resist protective coating material and patterning process 有权
标题翻译：抵抗保护涂料和图案化过程
公开(公告)号：US08323872B2
公开(公告)日：2012-12-04
申请号：US11451498
申请日：2006-06-13
申请人： Jun Hatakeyama , Takeru Watanabe , Yuji Harada
发明人： Jun Hatakeyama , Takeru Watanabe , Yuji Harada
IPC分类号： G03C1/00 , G03C5/00 , G03F7/00
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041
摘要： A resist protective coating material is provided comprising a polymer having a partial structure of formula (1) wherein R0 is H, F, alkyl or alkylene, and R1 is fluorinated alkyl or alkylene. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography. During alkali development, development of the resist film and removal of the protective coating can be simultaneously achieved.
摘要翻译：提供抗蚀剂保护涂层材料，其包含具有式（1）的部分结构的聚合物，其中R 0是H，F，烷基或亚烷基，R 1是氟化烷基或亚烷基。在图案形成过程中，材料在抗蚀剂膜上形成保护性涂层，其是不溶于水的，可溶于碱性显影剂中并且与抗蚀剂膜不混溶，从而有效地实施浸渍光刻。在碱显影过程中，可以同时实现抗蚀剂膜的开发和保护涂层的去除。

105. 发明申请

US20110151381A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：氟化单体，氟化聚合物，耐腐蚀组合物和方法
公开(公告)号：US20110151381A1
公开(公告)日：2011-06-23
申请号：US12952304
申请日：2010-11-23
申请人： Koji HASEGAWA , Masayoshi Sagehashi , Taku Morisawa , Yuji Harada , Takao Yoshihara
发明人： Koji HASEGAWA , Masayoshi Sagehashi , Taku Morisawa , Yuji Harada , Takao Yoshihara
IPC分类号： G03F7/004 , C08F14/18 , G03F7/20 , C07C69/34
CPC分类号： C07C69/73 , C08F220/22 , C08F220/24 , C08F220/26 , C08F222/18 , C08F222/22 , C08K5/36 , C08L33/14 , C08L33/16 , G03F7/0046 , G03F7/0397 , G03F7/2041 , C08L2666/04
摘要： A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 is a monovalent hydrocarbon group which may have halogen or oxygen, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
摘要翻译：氟化单体具有式（1）其中R1是H，F，甲基或三氟甲基，R2是可以具有卤素或氧的一价烃基，A是二价烃基，k1是0,1或2.聚合物来自氟化单体的化合物可赋予适当的防水性，水滑性，酸性和水解性，并且可用作配制抗蚀剂组合物中的添加剂聚合物。

106. 发明授权

US07851871B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07851871B2
公开(公告)日：2010-12-14
申请号：US12242142
申请日：2008-09-30
申请人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
发明人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
IPC分类号： H01L29/768
CPC分类号： H01L21/823462 , H01L21/823418
摘要： A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.
摘要翻译：在第一导电型半导体基板上一起设置高压晶体管和包括第二导电型MOSFET的外围电路。高电压晶体管包括：形成在半导体衬底中的第二导电类型的低浓度漏极区域; 形成在半导体衬底中并与低浓度漏极区隔开的第二导电类型的低浓度源区; 以及具有比低浓度源区域的扩散深度更深的扩散深度的第二导电类型的高浓度源区域。低浓度源极区域的扩散深度等于MOSFET的源极/漏极区域的扩散深度。

107. 发明授权

US07771914B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US07771914B2
公开(公告)日：2010-08-10
申请号：US11872952
申请日：2007-10-16
申请人： Jun Hatakeyama , Takao Yoshihara , Yuji Harada , Wataru Kusaki
发明人： Jun Hatakeyama , Takao Yoshihara , Yuji Harada , Wataru Kusaki
IPC分类号： G03F7/039 , G03F7/038 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/10 , G03F7/0046 , G03F7/0382 , G03F7/0392 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A resist composition comprises a polymer comprising recurring units having formula (1) wherein R1, R4, R7, and R14 are H or methyl, R2, R3, R15, and R16 are H, alkyl or fluoroalkyl, R is F or H, R5 is alkylene, R6 is fluorinated alkyl, R8 is a single bond or alkylene, R10 and R11 are H, F, methyl or trifluoromethyl, R12 and R13 are a single bond, —O— or —CR18R19—, R9, R18, and R19 are H, F, methyl or trifluoromethyl, R17 is alkylene, X1, X2 and X3 are —C(═O)—O—, —O—, or —C(═O)—R20—C(═O)—O— wherein R20 is alkylene, 0≦(a-1)
摘要翻译：抗蚀剂组合物包含含有式（1）的重复单元的聚合物，其中R 1，R 4，R 7和R 14为H或甲基，R 2，R 3，R 15和R 16为H，烷基或氟代烷基，R为F或H，R 5 是亚烷基，R6是氟化烷基，R8是单键或亚烷基，R10和R11是H，F，甲基或三氟甲基，R12和R13是单键，-O-或-CR18R19-，R9，R18和R19 是H，F，甲基或三氟甲基，R 17是亚烷基，X 1，X 2和X 3是-C（= O）-O-，-O-或-C（= O）-R 20 -C（= O）-O （a-1）+（a-2）+（a-1）+（a-2）+（a-2）（a-3）<1,0

108. 发明授权

US07666572B2 Resist top coat composition and patterning process 有权
标题翻译：抵抗面漆组合和图案化工艺
公开(公告)号：US07666572B2
公开(公告)日：2010-02-23
申请号：US11808543
申请日：2007-06-11
申请人： Yuji Harada , Jun Hatakeyama
发明人： Yuji Harada , Jun Hatakeyama
IPC分类号： G03F7/09 , G03F7/20 , G03F7/30 , G03C1/76
CPC分类号： G03F7/11 , C08F2/38 , C08F20/18 , C08F220/18 , C08F220/22 , C08F220/28 , C08F232/08 , G03F7/0046 , G03F7/2041 , Y10S430/106 , Y10S430/108
摘要： There is disclosed a resist top coat composition, comprising at least a polymer that has an amino group or a sulfonamide group at a polymer end and that is represented by the following general formula (1); and a patterning process comprising: at least, a step of forming a photoresist film on a substrate; a step of forming a resist top coat on the photoresist film by using the resist top coat composition; a step of exposing the substrate; and a step of developing the substrate with a developer. There can be provided a resist top coat composition that makes it possible to provide more certainly rectangular and excellent resist patterns when a top coat is formed on a photoresist film; and a patterning process using such a composition.
摘要翻译：公开了一种抗蚀剂面漆组合物，其至少包含在聚合物末端具有氨基或磺酰胺基团并由以下通式（1）表示的聚合物; 以及图案化工艺，包括：至少在衬底上形成光致抗蚀剂膜的步骤; 通过使用抗蚀剂面漆组合物在光致抗蚀剂膜上形成抗蚀剂面涂层的步骤; 使基板曝光的工序; 以及用显影剂显影衬底的步骤。可以提供抗蚀剂面漆组合物，当在光致抗蚀剂膜上形成顶涂层时，可以提供更确定的矩形和优异的抗蚀剂图案; 以及使用这种组合物的图案化工艺。

109. 发明申请

US20100001315A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100001315A1
公开(公告)日：2010-01-07
申请号：US12473604
申请日：2009-05-28
申请人： Masaaki OKITA , Kazuyuki Sawada , Yuji Harada , Saichirou Kaneko , Hiroto Yamagiwa
发明人： Masaaki OKITA , Kazuyuki Sawada , Yuji Harada , Saichirou Kaneko , Hiroto Yamagiwa
IPC分类号： H01L29/739 , H01L29/78
CPC分类号： H01L29/0847 , H01L29/0634 , H01L29/0692 , H01L29/7393 , H01L29/7835 , H01L2029/42388 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first diffusion region of a second conductivity type formed in an upper portion of a semiconductor substrate of a first conductivity type, a second diffusion region formed in a surface portion of the first diffusion region, a third diffusion region of the second conductivity type formed a predetermined distance spaced apart from the second diffusion region in the surface portion of the semiconductor substrate, a fourth diffusion region of the first conductivity type formed adjacent to the third diffusion region and electrically connected to the third diffusion region, a gate electrode formed on a part between the first diffusion region and the third diffusion region, and an insulating film formed thereon. The impurity concentration of the first diffusion region is set higher than an impurity concentration at which a depletion region extending from an junction interface between the first diffusion region and the semiconductor substrate is formed in a part of the first diffusion region which is between the second diffusion region and the gate electrode when a voltage is applied to the second diffusion region.
摘要翻译：半导体器件包括形成在第一导电类型的半导体衬底的上部中的第二导电类型的第一扩散区域，形成在第一扩散区域的表面部分中的第二扩散区域，第二扩散区域的第二扩散区域在半导体衬底的表面部分形成与第二扩散区间隔开的预定距离的导电类型，与第三扩散区相邻形成并与第三扩散区电连接的第一导电类型的第四扩散区，栅电极形成在第一扩散区域和第三扩散区域之间的部分上，以及形成在其上的绝缘膜。将第一扩散区域的杂质浓度设定为高于从第一扩散区域和半导体衬底之间的结界面延伸的耗尽区域形成在第一扩散区域的位于第二扩散区域的部分之间的杂质浓度区域和栅电极，当电压施加到第二扩散区域时。

110. 发明授权

US07622242B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US07622242B2
公开(公告)日：2009-11-24
申请号：US12236359
申请日：2008-09-23
申请人： Jun Hatakeyama , Koji Hasegawa , Takeru Watanabe , Yuji Harada
发明人： Jun Hatakeyama , Koji Hasegawa , Takeru Watanabe , Yuji Harada
IPC分类号： G03F7/039 , G03F7/038 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0382 , G03F7/0046 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A resist composition comprises a base polymer which changes its alkali solubility under the action of an acid, and an additive copolymer comprising recurring units (a) and (b). R1 is F or CF3, R2 and R3 are H or alkyl or form a ring, R4 is H or an acid labile group, R5 to R6 are H, F, or alkyl, or two of R5 to R8 may together form a ring, m=0 or 1, 0.2≦a≦0.8, and 0.1≦b≦0.6. A resist film of the composition has good barrier property against water so that leaching of the resist film with water is controlled, minimizing a change of pattern profile due to leach-out.
摘要翻译：抗蚀剂组合物包含在酸的作用下改变其碱溶解性的基础聚合物和包含重复单元（a）和（b）的添加剂共聚物。 R1是F或CF3，R2和R3是H或烷基或形成环，R4是H或酸不稳定基团，R5至R6是H，F或烷基，或R5至R8中的两个可以一起形成环， m = 0或1，0.2 <= a <= 0.8，0.1 <= b <= 0.6。该组合物的抗蚀剂膜对水具有良好的阻隔性，从而控制抗蚀剂膜与水的浸出，从而最小化由于浸出而导致的图案轮廓的变化。

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