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101. 发明申请

US20120077220A1 HARVESTED SAMPLE PREPARATION PERSONAL BOX AND SYSTEM AND METHOD OF HARVESTED SAMPLE PREPARATION 有权
标题翻译：收集的样品制备个人盒和系统以及收集的样品制备方法
公开(公告)号：US20120077220A1
公开(公告)日：2012-03-29
申请号：US13376973
申请日：2010-06-22
申请人： Manabu Mizutani , Yoshiko Nohmi , Kenji Yoneda
发明人： Manabu Mizutani , Yoshiko Nohmi , Kenji Yoneda
IPC分类号： C12Q1/02 , C12M3/00
CPC分类号： C12M45/22 , A61B10/0096 , C12M37/00
摘要： A harvested sample preparation system includes an operation isolator 3 in which aseptic manipulation is executed, a harvested sample preparation personal box 4 which can be connected with the operation isolator 3 and storing means 5 that stores a plurality of harvested sample preparation personal boxes 4. The harvested sample preparation personal box 4 includes a first housing chamber 4Aa and a second housing chamber 4Ab, and fluid appropriate for cell culture is supplied to the first housing chamber 4Aa from a fluid supply pipe 16 included by the storing means 5 while cooling fluid is supplied to the second housing chamber 4Ab from a cooling fluid supply pipe 18. The harvested sample preparation system that prevents mix-up and cross-contamination with a simple configuration can be provided.
摘要翻译：收集的样品制备系统包括其中执行无菌操作的操作隔离器3，可与操作隔离器3连接的收集的样品制备个人盒4和存储多个收获的样品制备个人盒的存储装置5。收集的样品制备个人盒4包括第一容纳室4Aa和第二容纳室4Ab，并且适合于细胞培养的流体从包含在存储装置5中的流体供应管16供应到第一容纳室4Aa，同时供应冷却流体从冷却流体供给管18到第二容纳室4Ab。可以提供防止混合和交叉污染的收集的样品制备系统，其具有简单的构造。

102. 发明授权

US08017528B2 Impurity-activating thermal process method and thermal process apparatus 有权
标题翻译：杂质活化热处理方法和热处理装置
公开(公告)号：US08017528B2
公开(公告)日：2011-09-13
申请号：US12352977
申请日：2009-01-13
申请人： Kenji Yoneda , Kazuma Takahashi
发明人： Kenji Yoneda , Kazuma Takahashi
IPC分类号： H01L21/00
CPC分类号： H01L21/26513 , H01L21/2686 , H01L21/324 , H01L29/6659 , H01L29/7833
摘要： A thermal cycle includes: increasing a temperature from an initial temperature to a temperature T1 at an arbitrary rate R1 (° C./sec); holding the temperature at the temperature T1 for an arbitrary period t1 (sec); increasing the temperature from the temperature T1 to a temperature T2 at a rate R2 (° C./sec) of 1.0×107 (° C./sec) or less; and holding the temperature at the temperature T2 for a period t2 (sec) of 50 msec or less. The thermal cycle thereafter includes: decreasing the temperature from the temperature T2 to the temperature T1 at a rate R1′ (° C./sec) of 1.0×107 (° C./sec) or less; holding the temperature T1 for an arbitrary period t3 (sec); and decreasing the temperature from the temperature T1 to a final temperature at an arbitrary rate R2′ (° C./sec). Such a thermal cycle is successively repeated in a plurality of iterations.
摘要翻译：热循环包括：以任意速率R1（℃/秒）将温度从初始温度升高到温度T1; 将温度保持在温度T1任意时段t1（秒）; 以1.0×107（℃/秒）以下的速率R2（℃/秒）将温度从温度T1升温至温度T2; 并将温度保持在温度T2，持续时间t2（秒）为50毫秒或更短。此后的热循环包括：以1.0×10 7（℃/秒）以下的速率R1'（℃/秒）将温度从温度T2降低到温度T1; 保持温度T1任意时间t3（秒）; 并以任意的速率R2'（℃/秒）将温度从温度T1降低到最终温度。这样的热循环在多次迭代中连续重复。

103. 发明授权

US07883746B2 Insulating film formation method which exhibits improved thickness uniformity and improved composition uniformity 有权
标题翻译：表现出改善的厚度均匀性和改善组合物均匀性的绝缘膜形成方法
公开(公告)号：US07883746B2
公开(公告)日：2011-02-08
申请号：US11826495
申请日：2007-07-16
申请人： Jun Suzuki , Kenji Yoneda , Seiji Matsuyama
发明人： Jun Suzuki , Kenji Yoneda , Seiji Matsuyama
IPC分类号： C23C16/40
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45504 , C23C16/45546 , H01L21/02164 , H01L21/0217 , H01L21/02181 , H01L21/0228 , H01L21/31608 , H01L21/31645 , H01L21/3185
摘要： In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M≧1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N≧1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.
摘要翻译：在绝缘膜形成方法中，将以低流量供给O3，然后供给O 3的O 3的循环A在非平衡状态下与基板上的Hf反应，形成氧化铪膜（M≥1），以及将高流量O 3供给到基板上的循环B，然后供给的O 3以与平衡状态的基板上的Hf反应形成氧化铪膜为进行N次（N≥1）。这些绝缘膜形成循环被定义为一个顺序。重复该顺序，直到获得所需的厚度，从而形成目标绝缘膜。

104. 发明授权

US07836072B2 Living body growth and therapy promotion condition collection information processing device 失效
标题翻译：活体生长和治疗促进条件收集信息处理装置
公开(公告)号：US07836072B2
公开(公告)日：2010-11-16
申请号：US10529162
申请日：2003-09-26
申请人： Kenji Yoneda
发明人： Kenji Yoneda
IPC分类号： G06F17/30 , G06F7/00
CPC分类号： G06Q10/06 , G06Q30/0217 , Y10S707/915 , Y10S707/942
摘要： An information processing system P3 is communicably connected with multiple controlling systems P2 that promote the growth or health of living organisms by controlling at the least the light irradiated on such living organisms by a light irradiating means X1, and the environmental data produced by one controlling system P1 and concerning the beneficial environmental parameters including the light irradiated on the living organisms are transmitted to and administered by the information processing system P3 so that the environmental data from one of the controlling systems P2 is delivered from the information processing system P3 to any of the other controlling systems P2, and royalty data concerning royalties is produced in relationship to a controlling system identifier that uniquely identifies the one controlling system P1 when the information processing system P3 receives or delivers the environmental data.
摘要翻译：信息处理系统P3与多个控制系统P2可通信地连接，多个控制系统P2通过利用光照射装置X1至少控制照射在这种活生物体上的光以及由一个控制系统产生的环境数据来促进生物体的生长或健康 P1和涉及包括照射在生物体上的光的有益环境参数被传送到信息处理系统P3并由其管理，使得来自控制系统P2之一的环境数据从信息处理系统P3被传送到任何与信息处理系统P3接收或传送环境数据时唯一地识别一个控制系统P1的控制系统标识符相关地产生关于特许权使用费的版税数据。

105. 发明申请

US20090197428A1 IMPURITY-ACTIVATING THERMAL PROCESS METHOD AND THERMAL PROCESS APPARATUS 有权
标题翻译：热塑性热处理方法和热处理装置
公开(公告)号：US20090197428A1
公开(公告)日：2009-08-06
申请号：US12363225
申请日：2009-01-30
申请人： Kazuma Takahashi , Kenji Yoneda
发明人： Kazuma Takahashi , Kenji Yoneda
IPC分类号： H01L21/00 , A21B1/06 , H01L21/30 , H01L21/40
CPC分类号： H01L21/67115 , H01L21/2686 , H01L21/324 , H01L29/6659 , H01L29/7833
摘要： An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at least one iteration of millisecond annealing at a temperature higher than the predetermined temperature is performed during the holding period of the spike RTA process.
摘要翻译：在对靶进行杂质引入步骤之后进行杂质活化热处理。在该热处理中，虽然进行包括保持温度在预定温度下的保持期的尖峰RTA工艺，但是在尖峰RTA的保持期间内进行至少一次在高于预定温度的温度下进行的毫秒退火处理。

106. 发明授权

US07562746B2 Method, system, and display for elevator allocation using multi-dimensional coordinates 失效
标题翻译：使用多维坐标进行电梯分配的方法，系统和显示
公开(公告)号：US07562746B2
公开(公告)日：2009-07-21
申请号：US11356234
申请日：2006-02-17
申请人： Toshifumi Yoshikawa , Satoru Toriyabe , Takamichi Hoshino , Shunichi Tanae , Atsuya Fujino , Ryou Okabe , Masaya Furuhashi , Kenji Yoneda
发明人： Toshifumi Yoshikawa , Satoru Toriyabe , Takamichi Hoshino , Shunichi Tanae , Atsuya Fujino , Ryou Okabe , Masaya Furuhashi , Kenji Yoneda
IPC分类号： B66B1/18
CPC分类号： B66B1/2458 , B66B2201/102 , B66B2201/211 , B66B2201/214 , B66B2201/226 , B66B2201/235 , B66B2201/403
摘要： A method and a display for elevator allocation evaluating are provided. When an elevator allocated to a hall call is selected by employing two different view points such as a real and a future call evaluation index, an elevator allocation reason and a balance between the two view points can be easily grasped. An elevator allocated to a hall call is evaluated on orthogonal coordinates in which the real call evaluation index and the future call evaluation index are defined as an X and a Y coordinate axis. Evaluation indexes of first to fourth elevator cars are evaluated by employing contour lines of a synthetic evaluation function, which is represented as the real and the future call evaluation index. A weight for allocating is displayed visually.
摘要翻译：提供了一种用于电梯分配评估的方法和显示器。当通过使用诸如实际和未来呼叫评估指数的两个不同的观点来选择分配给门厅呼叫的电梯时，可以容易地掌握两个视点之间的电梯分配原因和平衡。在实际呼叫评价指标和将来呼叫评价指标被定义为X和Y坐标轴的正交坐标上对分配给门厅呼叫的电梯进行评估。通过采用综合评估函数的轮廓线来评估第一至第四梯形电梯轿厢的评估指标，其被表示为实际和未来的呼叫评价指标。目视显示用于分配的重量。

107. 发明申请

US20090129121A1 ILLUMINATION DEVICE 失效
标题翻译：照明装置
公开(公告)号：US20090129121A1
公开(公告)日：2009-05-21
申请号：US12064696
申请日：2006-08-24
申请人： Kenji Yoneda
发明人： Kenji Yoneda
IPC分类号： F21V7/04
CPC分类号： G02B6/0021 , G01N21/8806 , G02B6/0031 , G02B6/0068
摘要： A lighting device is provided that surface-emits the light evenly with less number of luminous bodies by comprising a transparent body 2 for light diffusion in a shape of a body of rotation having a center bore 11 and provided with a luminous surface 2c and a light introducing surface 2b, and multiple luminous bodies 3 that introduce the light into the light introducing surface 2c of the transparent body 2 and make the luminous surface 2c of the transparent body 2 surface-emit the light, wherein the light introducing surface 2b is arranged on an inner peripheral section forming the center bore 11 of the transparent body 2, a reflecting layer 41 is arranged to reflect the light on a surface other than the light introducing surface 2b and the luminous surface 2c of the transparent body 2, and the light from the luminous bodies 3 is emitted toward an outer surrounding surface 2e of the transparent body 2.
摘要翻译：提供了一种照明装置，其通过包括用于光扩散的透明体2以具有中心孔11的旋转体的形状并且设置有发光表面2c和光引入表面2b和将透明体2的光引入表面2c引入光并使透明体2的发光表面2c发光的多个发光体3发光，其中光引入表面2b布置在形成透明体2的中心孔11的内周部分，反射层41被布置成将透光体2的光入射面2b和发光面2c以外的表面反射，发光体3朝向透明体2的外周面2e射出。

108. 发明申请

US20080166822A1 Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造装置
公开(公告)号：US20080166822A1
公开(公告)日：2008-07-10
申请号：US11905227
申请日：2007-09-28
申请人： Masahiko Niwayama , Kenji Yoneda
发明人： Masahiko Niwayama , Kenji Yoneda
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/304 , H01J2237/24535 , H01J2237/30472 , H01L21/28035
摘要： A semiconductor manufacturing apparatus includes: an ion source and a beam line for introducing an ion beam into a target film which is formed over a wafer with an insulating film interposed therebetween; a flood gun for supplying the target film with electrons for neutralizing charges contained in the ion beam; a rotating disk for subjecting the target film to mechanical scanning of the ion beam in two directions composed of r-θ directions; a rear Faraday cage for measuring the current density produced by the ion beam; a disk-rotational-speed controller and a disk-scanning-speed controller for changing the scanning speed of the target film; and a beam current/current density measuring instrument for controlling, according to the current density, the scanning speed of the target film.
摘要翻译：一种半导体制造装置，包括：离子源和用于将离子束引入到晶片之间的绝缘膜之间形成的靶膜的离子束; 用于向目标膜提供用于中和离子束中的电荷的电子的洪水枪; 旋转盘，用于使目标膜在由θ-θ方向组成的两个方向上对离子束进行机械扫描; 用于测量由离子束产生的电流密度的后法拉第笼; 盘转速控制器和用于改变目标膜的扫描速度的盘扫描速度控制器; 以及用于根据电流密度控制目标膜的扫描速度的束电流/电流密度测量仪器。

109. 发明授权

US07326626B2 Capacitor and method for manufacturing the same 有权
标题翻译：电容器及其制造方法
公开(公告)号：US07326626B2
公开(公告)日：2008-02-05
申请号：US11138497
申请日：2005-05-27
申请人： Yasuhiro Kawasaki , Kenji Yoneda
发明人： Yasuhiro Kawasaki , Kenji Yoneda
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L27/10852 , H01L28/84
摘要： The capacitor of the present invention comprises: an opening part formed in an interlayer insulating film on a semiconductor substrate; a lower electrode made of a polycrystalline silicon with an uneven surface part; a chemical oxide film formed on the uneven surface part of the lower electrode; an silicon oxynitride film which is obtained by modifying the chemical oxide film by nitriding processing; a capacitive insulating film made of a metal oxide film formed on the silicon oxynitride film; and an upper electrode formed on the capacitive insulating film.
摘要翻译：本发明的电容器包括：形成在半导体衬底上的层间绝缘膜中的开口部; 由具有不平坦表面部分的多晶硅制成的下电极; 形成在下电极的不平坦表面部分上的化学氧化物膜; 通过氮化处理改性化学氧化膜获得的氮氧化硅膜; 由在氧氮化硅膜上形成的金属氧化物膜构成的电容绝缘膜; 以及形成在电容绝缘膜上的上电极。

110. 发明申请

US20080017954A1 Semiconductor device and semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20080017954A1
公开(公告)日：2008-01-24
申请号：US11826087
申请日：2007-07-12
申请人： Jun Suzuki , Kenji Yoneda , Seiji Matsuyama
发明人： Jun Suzuki , Kenji Yoneda , Seiji Matsuyama
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L21/02181 , H01L21/022 , H01L21/0223 , H01L21/02252 , H01L21/0228 , H01L21/3141 , H01L21/31645 , H01L28/40
摘要： A capacitor insulating film composed of a layered film of first- to third-layer hafnium oxide films is formed on a lower electrode of a capacitor. The first- and third-layer hafnium oxide films have a composition ratio of oxygen to hafnium higher than the second-layer hafnium oxide film. Thus, the capacitor insulating film is composed of the first- and third-layer hafnium oxide films having greater barrier height and the second-layer hafnium oxide film having a higher dielectric constant, thereby attaining a capacitor having less leakage current and large capacity.
摘要翻译：在电容器的下电极上形成由第一至第三层氧化铪膜的层叠膜构成的电容绝缘膜。第一层和第三层氧化铪膜的氧与铪的组成比高于第二层氧化铪膜。因此，电容器绝缘膜由具有较高势垒高度的第一和第三层氧化铪膜和具有较高介电常数的第二层氧化铪膜组成，从而获得具有较小漏电流和大容量的电容器。

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