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    • 104. 发明授权
    • Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure
    • 具有叠层纵向偏置层结构的三端磁传感器
    • US07639459B2
    • 2009-12-29
    • US11032598
    • 2005-01-10
    • Jeffrey R. ChildressRobert E. Fontana, Jr.Jeffrey S. Lille
    • Jeffrey R. ChildressRobert E. Fontana, Jr.Jeffrey S. Lille
    • G11B5/33
    • B82Y25/00G01R33/093G11B5/3903G11B5/3932H01L29/66984H01L43/08
    • In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure. The in-stack LBL structure is made part of the collector region which also includes a layer of semiconductor material. In one variation, the emitter region has the in-stack LBL structure and the collector region has the pinned layer structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.
    • 在一个说明性示例中,适用于磁头的三端磁传感器(TTM)具有包括基极区域,集电极区域和发射极区域的传感器堆叠结构。 第一阻挡层将发射极区域与基极区域分开,并且第二阻挡层将集电极区域与基极区域分离。 TTM的多个端子包括耦合到基极区域的基极引线,耦合到集电极区域的集电极引线和耦合到发射极区域的发射极引线。 优选地,基区由自由层结构组成,以便具有相对较小的厚度。 被钉扎层结构是发射极区域的一部分。 堆叠纵向偏置层(LBL)结构与传感器堆叠结构堆叠形成,并且具有平行于TTM的感测平面的磁矩,用于磁偏置自由层结构。 叠层LBL结构是集成区域的一部分,其还包括半导体材料层。 在一个变型中,发射极区域具有叠层LBL结构,并且集电极区域具有钉扎层结构。 TTM可以包括自旋阀晶体管(SVT),磁隧道晶体管(MTT)或双结结构。
    • 105. 发明授权
    • Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same
    • 具有与集电体基板材料在一起的基极引线层的三端子磁感测装置及其制造方法
    • US07635599B2
    • 2009-12-22
    • US11239178
    • 2005-09-29
    • Robert E. Fontana, Jr.Jui-Lung LiJeffrey S. LilleSergio Nicoletti
    • Robert E. Fontana, Jr.Jui-Lung LiJeffrey S. LilleSergio Nicoletti
    • H01L21/00
    • G11B5/398B82Y10/00B82Y25/00G01R33/093G11B5/3903H01L29/66984
    • Three terminal magnetic sensing devices (TTMs) having base lead layers in-plane with collector substrate materials, and methods of making the same, are disclosed. In one illustrative example, a collector substrate having an elevated region and a recessed region adjacent the elevated region is provided. An insulator layer is formed in full-film over the collector substrate, and a base lead layer is formed in full-film over the insulator layer and in-plane with semiconductor materials of the elevated region. The insulator materials and the base lead materials that are formed over the elevated region are removed. A sensor stack structure having an emitter region and a base region is then formed over the elevated region such that part of the base region is formed over an end of the base lead layer. A base conductive via may be formed to contact base lead materials of the base lead layer at a suitable distance away from the sensor stack structure. Advantageously, the base conductive via formation may occur without causing damage to the sensor stack structure. Also, the base lead layer is formed in the recessed region of the collector substrate prior to the formation of the sensor stack structure such that the TTM may be entirely in-situ manufactured. Furthermore, the trackwidth of the TTM may be defined directly by the elevated region of the collector substrate. The TTM is suitable for incorporation into nanoscale devices which increase areal recording densities, therefore aiding the revolution in magnetic storage.
    • 公开了具有与集电器基板材料在一起的基极引线层的三端子磁感测装置(TTM)及其制造方法。 在一个说明性示例中,提供了具有升高区域和与升高区域相邻的凹陷区域的收集器基板。 在集电体基板上形成绝缘体层,并且在绝缘体层上形成基极引线层,并且与升高区域的半导体材料在同一平面内形成基极引线层。 去除在升高区域上形成的绝缘体材料和基底引线材料。 然后在升高的区域上形成具有发射极区域和基极区域的传感器堆叠结构,使得基极区域的一部分形成在基极引线层的一端上。 可以形成基底导电通孔,以在离传感器堆叠结构适当的距离处接触基底引线层的基底引线材料。 有利地,可以在不会对传感器堆叠结构造成损害的情况下发生基底导电通孔形成。 此外,在形成传感器堆叠结构之前,基极引线层形成在集电体基板的凹陷区域中,使得TTM可以完全原位制造。 此外,TTM的轨道宽度可以由收集器基板的升高区域直接定义。 TTM适合纳入纳米级器件,增加面积记录密度,从而有助于磁存储的革命。