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    • 101. 发明授权
    • Coolant-cooled linear motor
    • 冷却液冷却直线电机
    • US08450885B2
    • 2013-05-28
    • US12984123
    • 2011-01-04
    • Shusaku YoshidaToshiyuki YamagishiKazuya WatanabeMasahiko Tanabe
    • Shusaku YoshidaToshiyuki YamagishiKazuya WatanabeMasahiko Tanabe
    • H02K41/03
    • H02K41/031H02K5/20H02K9/19H02K9/22
    • In a coolant-cooled linear motor includes an armature including armature windings and a cooling jacket arranged to surround the armature windings, the cooling jacket unit includes four cooling jackets defining four side faces parallel to the extension direction of the armature and two end blocks defining two opposite end faces in the extension direction of the armature, the cooling jackets and the end blocks being connected to one another in a box shape. Each of the cooling jackets has an internal space to be supplied with a coolant; and a field magnet unit includes a yoke made of a ferromagnetic material and permanent magnets arranged in the yoke, one of the armature and the field magnet unit making relative movement with respect to the other.
    • 在冷却剂冷却的线性电动机中包括具有电枢绕组的电枢和设置成围绕电枢绕组的冷却套,冷却套单元包括限定四个侧面的四个冷却套,该四个侧面平行于电枢的延伸方向,两个端块限定两个 电枢的延伸方向上的相对端面,冷却套和端块彼此以盒形形式连接。 每个冷却套具有一个内部空间以供应冷却液; 场磁体单元包括由铁磁材料制成的磁轭和布置在磁轭中的永磁体,电枢和磁场磁体单元中的一个相对于另一个相对运动。
    • 104. 发明授权
    • Short channel semiconductor devices with reduced halo diffusion
    • 具有减少晕圈扩散的短沟道半导体器件
    • US08445342B2
    • 2013-05-21
    • US12821507
    • 2010-06-23
    • Bin YangMan Fai Ng
    • Bin YangMan Fai Ng
    • H01L21/338
    • H01L29/7816H01L21/823807H01L21/823828H01L27/092H01L29/66492H01L29/66545H01L29/6656H01L29/66575H01L29/7833
    • A short channel semiconductor device is formed with halo regions that are separated from the bottom of the gate electrode and from each other. Embodiments include implanting halo regions after forming source/drain regions and source/drain extension regions. An embodiment includes forming source/drain extension regions in a substrate, forming source/drain regions in the substrate, forming halo regions under the source/drain extension regions, after forming the source drain regions, and forming a gate electrode on the substrate between the source/drain regions. By forming the halo regions after the high temperature processing involved informing the source/drain and source/drain extension regions, halo diffusion is minimized, thereby maintaining sufficient distance between halo regions and reducing short channel NMOS Vt roll-off.
    • 短沟道半导体器件形成有与栅电极的底部彼此分离的晕圈。 实施例包括在形成源极/漏极区域和源极/漏极延伸区域之后注入晕圈。 一个实施例包括在衬底中形成源极/漏极延伸区域,在衬底中形成源极/漏极区域,在形成源极漏极区域之后在源极/漏极延伸区域下方形成卤素区域,以及在衬底上形成栅极电极 源/漏区。 通过在涉及源极/漏极和源极/漏极延伸区域的高温处理之后形成晕圈区域,使得光晕扩散最小化,从而在晕圈区域之间保持足够的距离并且减少短沟道NMOS Vt滚降。
    • 105. 发明授权
    • Hot-press sheet
    • 热压片
    • US08445095B2
    • 2013-05-21
    • US10558038
    • 2004-05-13
    • Shigeo Hoshino
    • Shigeo Hoshino
    • D06N7/04
    • C09D179/08B30B15/061B32B37/26B32B2037/266B32B2037/268H05K3/022Y10T428/24355Y10T428/24372Y10T428/24455C08K3/22
    • A hot-press sheet (20) comprises a sheet-shaped base material (1) and a release coating film (2) applied to a surface of the base material (1), in which the coating film (2) completely covers an entire surface of the base material (1) to provide air-tightness for the hot-press sheet (20). The coating film (2) comprises a resin composition as a host material, and 5% or more by weight of organic powder and 5% or more by weight of inorganic powder are mixed in 100% by weight of the resin composition which forms the coating film (2), so that the mixture of 5 to 55% by weight of the organic powder and 5 to 55% by weight of the inorganic powder becomes 30 to 60% by weight in total.
    • 热压片(20)包括片状基材(1)和涂布在基材(1)的表面上的剥离涂膜(2),其中涂膜(2)完全覆盖整个 (1)的表面,以提供热压片(20)的气密性。 涂膜(2)包含作为主体材料的树脂组合物,并且在100重量%的形成涂层的树脂组合物中混合5重量%以上有机粉末和5重量%以上无机粉末 膜(2),使得5〜55重量%的有机粉末和5〜55重量%的无机粉末的混合物总计为30〜60重量%。
    • 106. 发明授权
    • Self-aligned contact for replacement metal gate and silicide last processes
    • 用于替换金属栅极和硅化物最后工艺的自对准触点
    • US08440533B2
    • 2013-05-14
    • US13041134
    • 2011-03-04
    • Eng Huat TohElgin Quek
    • Eng Huat TohElgin Quek
    • H01L21/336
    • H01L27/088H01L21/28518H01L21/76801H01L21/76816H01L21/76834H01L21/76897H01L21/823475H01L29/78
    • A high-K/metal gate semiconductor device is provided with larger self-aligned contacts having reduced resistance. Embodiments include forming a first high-k metal gate stack on a substrate between source/drain regions, a second high-k metal gate stack on an STI region, and a first ILD between the metal gate stacks, forming an etch stop layer and a second ILD sequentially over the substrate, with openings in the second ILD over the metal gate stacks, forming spacers on the edges of the openings, forming a third ILD over the second ILD and the spacers, removing the first ILD over the source/drain regions, removing the etch stop layer, the second ILD, and the third ILD over the source/drain regions, adjacent the spacers, and over a portion of the spacers, forming first trenches, removing the third ILD over the second high-k metal gate stack and over a portion of the spacers, forming second trenches, and forming contacts in the first and second trenches.
    • 高K /金属栅极半导体器件具有较大的自对准触点,电阻降低。 实施例包括在源极/漏极区域之间的衬底上形成第一高k金属栅极堆叠,在STI区域上形成第二高k金属栅极堆叠以及在金属栅极堆叠之间形成第一ILD,形成蚀刻停止层和 在衬底上顺序地具有第二ILD,在金属栅堆叠上的第二ILD中具有开口,在开口的边缘上形成间隔物,在第二ILD和间隔物上形成第三ILD,在源/漏区上去除第一ILD 在邻近间隔物的源极/漏极区域上以及在间隔物的一部分上方去除蚀刻停止层,第二ILD和第三ILD,形成第一沟槽,在第二高k金属栅极上去除第三ILD 堆叠和一部分间隔物,形成第二沟槽,并在第一和第二沟槽中形成接触。
    • 109. 发明授权
    • Electrochemical test strip, electrochemical test system, and measurement method using the same
    • 电化学试片,电化学试验系统及使用其的测量方法
    • US08409424B2
    • 2013-04-02
    • US12641406
    • 2009-12-18
    • Guan-Ting ChenYueh-Hui LinKai-Tsung TengSz-Hau ChenThomas Y. S. Shen
    • Guan-Ting ChenYueh-Hui LinKai-Tsung TengSz-Hau ChenThomas Y. S. Shen
    • G01N27/327
    • G01N27/3274
    • An electrochemical test strip, an electrochemical test system, and a measurement method using the same are provided. The electrochemical test strip includes an insulating substrate, an electrode system formed on the insulating substrate, and an insulating layer formed on the electrode system. The electrode system includes a set of measurement electrodes, a set of identifying electrodes, and a resistive path having a predetermined resistance value. The set of identifying electrodes is made of metal material, and the resistive path is made of non-metal material. The set of measurement electrodes includes a reference electrode and a working electrode insulated from each other, and the set of identifying electrodes includes a first identifying electrode and a second identifying electrode connected with each other through the resistive path. The insulating layer covers a part of the electrode system, wherein a part of the electrode system not covered by the insulating layer forms a reaction region with a supply port. When a sample is injected into the supply port of the reaction region, the injected sample reaches the set of measurement electrodes and the set of identifying electrodes in sequence.
    • 提供电化学测试条,电化学测试系统以及使用其的测量方法。 电化学测试条包括绝缘基板,形成在绝缘基板上的电极系统和形成在电极系统上的绝缘层。 电极系统包括一组测量电极,一组识别电极和具有预定电阻值的电阻路径。 该组识别电极由金属材料制成,电阻路径由非金属材料制成。 该组测量电极包括彼此绝缘的参考电极和工作电极,并且该组识别电极包括通过电阻路径彼此连接的第一识别电极和第二识别电极。 绝缘层覆盖电极系统的一部分,其中未被绝缘层覆盖的电极系统的一部分与供给端口形成反应区域。 当将样品注入反应区域的供给口时,注入的样品依次到达测量电极组和识别电极组。
    • 110. 发明授权
    • Solid polymethylaluminoxane composition and method for manufacturing same
    • 固体聚甲基铝氧烷组合物及其制造方法
    • US08404880B2
    • 2013-03-26
    • US13128632
    • 2009-11-11
    • Eiichi KajiEtsuo Yoshioka
    • Eiichi KajiEtsuo Yoshioka
    • C07F5/06C08F4/642C08F4/6592
    • C08G79/10C07F5/066C08F4/65925C08F4/65927C08F10/00C08F110/02C08L85/00C08F4/65912C08F4/6028C08F2500/24C08F2500/03
    • Disclosed are: a solid polymethylaluminoxane composition which does not utilize silica or the like, has the form of relatively fine particles, has more uniform particle sizes, and exhibits a high polymerization activity when used in the preparation of an olefin polymer; a process for producing the solid polymethylaluminoxane composition; a polymerization catalyst; and a process for producing an olefin polymer. Specifically disclosed are: a solid polymethylaluminoxane composition which has an aluminum content of 36 to 41 mass % and contains a methyl group derived from a trimethylaluminum moiety at a molar fraction of 12 mol % or less; a process for producing the solid polymethylaluminoxane composition, which comprises the step of heating an aromatic hydrocarbon solution containing polymethylaluminoxane and trimethylaluminum to cause the precipitation of the solid polymethylaluminoxane composition; a polymerization catalyst for an olefin, which comprises the solid polymethylaluminoxane composition and a transition metal compound as catalyst components; and a process for producing an olefin polymer by using the polymerization catalyst.
    • 公开了:不使用二氧化硅等的具有较细颗粒形式的固体聚甲基铝氧烷组合物具有更均匀的粒径,并且当用于制备烯烃聚合物时表现出高聚合活性; 制备固体聚甲基铝氧烷组合物的方法; 聚合催化剂; 和烯烃聚合物的制造方法。 具体公开的是:固体聚甲基铝氧烷组合物,其铝含量为36〜41质量%,摩尔分数为12摩尔%以下,含有来自三甲基铝部分的甲基; 一种制备固体聚甲基铝氧烷组合物的方法,其包括加热含有聚甲基铝氧烷和三甲基铝的芳族烃溶液以使固体聚甲基铝氧烷组合物沉淀的步骤; 用于烯烃的聚合催化剂,其包含固体聚甲基铝氧烷组合物和作为催化剂组分的过渡金属化合物; 以及使用聚合催化剂制造烯烃聚合物的方法。