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    • 95. 发明授权
    • Multilayer distorted-lattice copper-oxide perovskite structures
including NdCeCuO and YBaCuO multi-layers
    • 多层失真晶格氧化铜钙钛矿结构,包括NdCeCuO和YBaCuO多层
    • US5529980A
    • 1996-06-25
    • US264837
    • 1994-06-23
    • Arunava Gupta
    • Arunava Gupta
    • B32B9/00C01G1/00C01G3/00C04B35/45H01B12/02H01L39/12
    • H01L39/2448C04B35/4508H01L39/128Y10S505/701
    • The present invention concerns a multilayered structure comprising copper-oxide perovskite material having strained crystallographic lattices and altered superconductive properties. The multilayer structure of the invention comprises at least one first layer of a first copper-oxide material and at least one second layer of a second, different copper-oxide perovskite material. The first and second layers are adjacent to one another in an epitaxial lattice-distortion relationship. The first and second copper-oxide perovskite materials in unstressed bulk states define respectively first and second comparison nondistorted crystallographic lattice structures. The first and second comparison nondistorted crystallographic lattice structures have unit cell dimensions which differ in at least one dimension. The first copper-oxide perovskite material in the first layer has a first crystallographic lattice structure which is distorted relative to the first comparison nondistorted crystallographic lattice structure. The second copper-oxide perovskite material in the second layer has a second crystallographic lattice structure which is distorted relative to the second comparison nondistorted crystallographic lattice structure. The first copper-oxide perovskite material in at least one first layer exhibits normal and superconductive states which define a set of normal/superconducting transition parameters. At least one of the normal/superconducting transition parameters differs from a corresponding comparison normal/superconducting transition parameter for the first copper-oxide perovskite material in the unstressed bulk state.
    • 本发明涉及包含具有应变结晶晶格和改变的超导性质的氧化铜钙钛矿材料的多层结构。 本发明的多层结构包括至少一个第一铜氧化物材料的第一层和至少一个第二不同的氧化铜钙钛矿材料的第二层。 第一层和第二层以外延晶格失真关系彼此相邻。 第一和第二氧化钙钙钛矿材料在不受应力的大量状态下分别定义了第一和第二比较非失调晶格结构。 第一和第二比较非失调晶格结构具有在至少一个维度上不同的晶胞尺寸。 第一层中的第一氧化铜钙钛矿材料具有相对于第一比较非失调晶格结构变形的第一晶格结构。 第二层中的第二铜氧化物钙钛矿材料具有相对于第二比较非失调晶格结构变形的第二晶格结构。 至少一个第一层中的第一个氧化铜钙钛矿材料表现出正常和超导状态,这些状态限定了一组正常/超导转变参数。 正常/超导转变参数中的至少一个不同于在未压制体状态下的第一氧化铜钙钛矿材料的对应的比较正/超导转变参数。
    • 98. 发明授权
    • High power ferroelectric RF phase shifter
    • 大功率铁电RF移相器
    • US5451567A
    • 1995-09-19
    • US219913
    • 1994-03-30
    • Satyendranath Das
    • Satyendranath Das
    • H01P1/18H01B12/02H01P9/00H03H11/16
    • H01P1/181Y10S505/70Y10S505/701Y10S505/866
    • The high power ferroelectric RF phase shifter contains a ferroelectric material in a microstrip line section. Between the ferroelectric phase shifter and the input, there is a ferroelectric matching transformer. Between the ferroelectric phase shifter and the output, there is a quarter wave ferroelectric matching transformer. A bias field is connected across the top and bottom surfaces of the ferroelectric material. When a bias field is applied across the ferroelectric material, the permittivity is reduced and as such the velocity of propagation is increased. This causes an increase in the effective electrical length of the phase shifter. Increasing the bias voltage increases the phase shift. The ferroelectric RF phase shifter may be constructed of a ferroelectric liquid crystal (FLC). The ferroelectric material is operated above its Curie temperature.
    • 高功率铁电RF移相器在微带线部分中包含铁电材料。 在铁电相移器和输入端之间有一个铁电匹配变压器。 在铁电移相器和输出之间,有一个四分之一波长的铁电匹配变压器。 偏置电场连接在铁电材料的顶表面和底表面之间。 当跨越铁电材料施加偏置场时,介电常数降低,传播速度增加。 这导致移相器的有效电长度的增加。 增加偏置电压会增加相移。 铁电RF移相器可以由铁电液晶(FLC)构成。 铁电材料的运行高于居里温度。