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91. 发明申请

US20170076986A1 NON-DESTRUCTIVE EPITAXIAL LIFT-OFF OF LARGE AREA III-V THIN-FILM GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND SUBSTRATE REUSE 审中-公开
标题翻译：通过金属有机化学气相沉积和基底重新生长的大面积III-V薄膜的非破坏性外延提升
公开(公告)号：US20170076986A1
公开(公告)日：2017-03-16
申请号：US15212104
申请日：2016-07-15
申请人： The Regents of the University of Michigan
发明人： Stephen R. Forrest , Kyusang Lee , Dejiu Fan , Byungjun Lee
IPC分类号： H01L21/78 , C30B33/02 , C30B33/10 , C30B33/12 , C23F1/16 , C23F4/00
CPC分类号： H01L21/7813 , C30B29/42 , C30B33/02 , C30B33/10 , C30B33/12 , H01L21/30612 , H01L31/1896
摘要： Disclosed are methods for preserving the integrity of large-sized growth substrates. The methods pertain to accelerating the rate of epitaxial liftoff, and improved cleaning and etching steps. Also disclosed are devices produced therein.
摘要翻译：公开了保留大尺寸生长基质完整性的方法。该方法涉及加速外延提升速率，以及改进的清洗和蚀刻步骤。还公开了其中生产的装置。

92. 发明授权

US09493877B1 Etching technique for microfabrication substrates 有权
标题翻译：微细加工基材的蚀刻技术
公开(公告)号：US09493877B1
公开(公告)日：2016-11-15
申请号：US15144735
申请日：2016-05-02
申请人： Innovative Micro Technology
发明人： John Harley , Jeffery F. Summers , Tao Gilbert
IPC分类号： C23F1/02 , C23F4/00 , C23F1/12 , H01J37/32 , C23F1/16 , C23F1/38 , C23F1/44 , B81C1/00 , G03F7/004
CPC分类号： C23F1/02 , B81C1/00531 , B81C1/00539 , B81C2201/0132 , B81C2201/0133 , C23F1/16 , C23F1/38 , C23F1/44 , C23F4/00 , G03F7/0041 , H01J37/32009 , H01J2237/334 , H01L21/02244 , H01L21/31111 , H01L21/32134 , H01L21/32136 , H01L21/32139
摘要： A method for creating small features in an Al/Ag/Ti multilayer stack is disclosed. The method uses a combination of wet and dry etching techniques to anisotropically etch the layers.
摘要翻译：公开了一种用于在Al / Ag / Ti多层叠层中形成小特征的方法。该方法使用湿式和干式蚀刻技术的组合来各向异性地蚀刻层。

93. 发明授权

US09481934B2 Method of removing work-affected layer 有权
标题翻译：删除受影响层的方法
公开(公告)号：US09481934B2
公开(公告)日：2016-11-01
申请号：US13796150
申请日：2013-03-12
申请人： MITSUBISHI HEAVY INDUSTRIES, LTD.
发明人： Taisuke Kamioka
IPC分类号： C25F3/00 , C23F1/20 , C23F1/16 , C23F1/26 , C23F3/06 , C23G1/10
CPC分类号： C23F1/20 , C23F1/16 , C23F1/26 , C23F3/06 , C23G1/106
摘要： A method of removing a work-affected layer formed on the worked surface of a TiAl-based alloy (base material) by machining work, without exerting any adverse effect on the base material. The method of removing the work-affected layer includes a step of dipping a TiAl-based alloy, having a work-affected layer formed on the surface thereof by machining, in an etchant containing predetermined concentrations of hydrofluoric acid and nitric acid. Within the etchant, the concentration of the hydrofluoric acid is not less than 5 g/L and not more than 56 g/L, and the concentration of the nitric acid is selected from within a range from not less than 50 g/L to not more than 260 g/L in accordance with a combination of the concentration of the hydrofluoric acid within the etchant and the etching treatment temperature.
摘要翻译：通过机械加工除去形成在TiAl基合金（基材）的加工面上的受影响层的方法，而不会对基材产生不利影响。去除受影响层的方法包括在含有预定浓度的氢氟酸和硝酸的蚀刻剂中浸渍具有通过机械加工形成在其表面上的受影响层的TiAl基合金的步骤。在蚀刻剂中，氢氟酸的浓度不小于5g / L且不超过56g / L，硝酸的浓度选自不小于50g / L至不超过50g / L 根据蚀刻剂内的氢氟酸的浓度和蚀刻处理温度的组合，超过260g / L。

94. 发明申请

US20160258069A1 ALUMINUM NANOWIRE ARRAYS AND METHODS OF PREPARATION AND USE THEREOF 审中-公开
标题翻译：纳米铝制阵列及其制备和使用方法
公开(公告)号：US20160258069A1
公开(公告)日：2016-09-08
申请号：US15059200
申请日：2016-03-02
申请人： The Trustees of Boston College
发明人： Nathan T. Nesbitt , Michael J. Naughton
IPC分类号： C23F1/16
CPC分类号： C25F3/20 , C25B1/003 , C25D11/022 , C25D11/045 , C25D11/16 , C25D11/24 , H01L21/0223 , H01L29/66818 , H01L31/0352
摘要： The invention provides a novel, template-free process for the fabrication of metal nanowires of novel dimensions. The unconventional method produces highly ordered and freestanding aluminum nanowire arrays.
摘要翻译：本发明提供了一种用于制造新颖尺寸的金属纳米线的新颖的，无模板的方法。非常规方法产生高度有序和独立的铝纳米线阵列。

95. 发明申请

US20160247673A1 TEMPLATE FORMING METHOD, TEMPLATE, AND TEMPLATE BASE MATERIAL 有权
标题翻译：模板形成方法，模板和模板基体材料
公开(公告)号：US20160247673A1
公开(公告)日：2016-08-25
申请号：US14844050
申请日：2015-09-03
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Masatoshi TSUJI , Masayuki HATANO , Yohko KOMATSU , Tetsuro NAKASUGI
IPC分类号： H01L21/027 , C23F1/16
CPC分类号： C23F1/16 , G03F7/0002
摘要： According to one embodiment, a template forming method is provided. In the template forming method, a template pattern is formed on a first surface of a substrate. A high liquid repellent property portion is formed in a region different from the template pattern on a side of the first surface of the substrate. The high liquid repellent property portion has a higher contacting angle with respect to a resist than a portion without the high liquid repellent property portion formed therein.
摘要翻译：根据一个实施例，提供了一种模板形成方法。在模板形成方法中，在基板的第一表面上形成模板图案。在基板的第一表面侧的与模板图案不同的区域中形成高液体排斥性部分。高液体排斥性部分相对于抗蚀剂的接触角高于不形成高斥液性部分的部分。

96. 发明申请

US20160160359A1 PREPARATION OF CORROSION-PROTECTIVE COPPER PASTE THROUGH SINGLE PROCESS AND APPLICATION THEREOF TO DIPOLE TAG ANTENNA 有权
标题翻译：通过单个工艺制备腐蚀性保护性磷酸钙，并将其应用于DIPOLE TAG ANTENNA
公开(公告)号：US20160160359A1
公开(公告)日：2016-06-09
申请号：US14909919
申请日：2014-05-27
申请人： SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
发明人： Jyongsik JANG , Keunyoung SHIN
IPC分类号： C23F1/16
CPC分类号： C23F1/16 , B22F1/004 , B22F1/0048 , B22F1/0055 , B22F1/0062 , B22F1/0074 , B22F1/0088 , C09D11/52 , H01B1/22 , H01Q9/26
摘要： Provided are a method of producing corrosion-protective copper paste through a single process and an application thereof to a dipole tag antenna. Copper powder is surface-etched by using a hydrochloric acid in an inert gas atmosphere, a phosphoric acid aqueous solution is added thereto to form copper phosphate on the etched surface of the copper powder, and then, a vinyl imidazole-silane copolymer and poly(4-styrenesulfonate) were introduced thereto to form a corrosion-protective coating layer on the surface of copper powder on which the copper phosphate has been formed, and a centrifuge and an agate mortar are used to prepare a copper paste having high viscosity and high dispersability. When a copper paste thin film is formed on a flexible film by screen printing, a produced dipole tag antenna may have high efficiency.
摘要翻译：提供了通过单个工艺生产防腐蚀铜浆料的方法及其应用于偶极标签天线。通过在惰性气体气氛中使用盐酸对铜粉进行表面蚀刻，在铜粉末的蚀刻表面上加入磷酸水溶液形成磷酸铜，然后，将乙烯基咪唑 - 硅烷共聚物和聚（ 4-苯乙烯磺酸盐），在其上形成有磷酸铜的铜粉表面形成防腐蚀涂层，使用离心机和玛瑙研钵制备粘度高，分散性高的铜浆。当通过丝网印刷在柔性膜上形成铜膏薄膜时，产生的偶极标签天线可能具有高效率。

97. 发明授权

US09334570B2 Support fixture for acid etching PCD cutting inserts 有权
标题翻译：支持夹具用于酸蚀PCD切削刀片
公开(公告)号：US09334570B2
公开(公告)日：2016-05-10
申请号：US14298828
申请日：2014-06-06
申请人： Stingray Group, LLC
发明人： Allen Turner
IPC分类号： C23F1/00 , C03C15/00 , C03C25/68 , C25F3/00 , C23F1/16 , C22C26/00 , C23F1/08 , B22F5/00
CPC分类号： C23F1/00 , B22F2005/001 , C22C26/00 , C23F1/08
摘要： A fixture for etching PCD drill inserts is provided. The fixture design allows the fixture to be injection molded, significantly reducing costs and allowing the fixture to be disposed of after a single use. The fixture allows for faster use and more accurate etching of the PCD insert.
摘要翻译：提供了一种用于蚀刻PCD钻头的夹具。夹具设计允许夹具注塑成型，大大降低成本，并允许在一次使用后对夹具进行处理。该夹具可以更快速地使用和更精确地蚀刻PCD插入物。

98. 发明授权

US09233851B2 Method for manufacturing high quality graphene by heating carbon-based self-assembly monolayers 有权
标题翻译：通过加热碳基自组装单层制造高质量石墨烯的方法
公开(公告)号：US09233851B2
公开(公告)日：2016-01-12
申请号：US14141544
申请日：2013-12-27
申请人： KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： SeokWoo Jeon , JinWook Baek , JinSup Lee
IPC分类号： C01B31/04 , C23C14/14 , C23C16/06 , H01B1/04 , C23F1/14 , C23C14/20 , C23F1/16
CPC分类号： C01B31/0446 , C01B32/184 , C23C14/205 , C23F1/16 , H01B1/04
摘要： The present invention relates to the method for manufacturing high quality graphene by heating carbon-based self-assembly monolayers, comprising the steps of: forming carbon source layers which are convertible into the graphene layer on the substrate; forming a metal catalyst layer on the carbon source layer; converting the carbon source layers into the graphene layer by heating the first part of the substrate using a local heating source, wherein the carbon source layers and the metal catalyst layers are formed; converting the carbon source layers into graphene by moving the local heating source and then heating the second part which is different from the first part; and removing the metal catalyst layer. The present invention also provides a substrate comprising a graphene layer manufactured by the above method and provides applications in semiconductor devices and electronic materials using the substrate.
摘要翻译：本发明涉及通过加热碳基自组装单层制造高质量石墨烯的方法，包括以下步骤：形成碳源层，其可转化为基板上的石墨烯层; 在碳源层上形成金属催化剂层; 通过使用局部加热源加热衬底的第一部分，将碳源层转化为石墨烯层，其中形成碳源层和金属催化剂层; 通过移动局部加热源将碳源层转化成石墨烯，然后加热与第一部分不同的第二部分; 并除去金属催化剂层。本发明还提供一种包含通过上述方法制造的石墨烯层的基板，并提供了使用该基板的半导体器件和电子材料中的应用。

99. 发明申请

US20120305526A1 METHOD OF WET ETCHING SUBSTRATES FOR FORMING THROUGH HOLES TO EMBED WAFER LEVEL OPTICAL LENS MODULES 审中-公开
标题翻译：用于形成通过孔的嵌入式水平光学透镜模块的蚀刻基板的方法
公开(公告)号：US20120305526A1
公开(公告)日：2012-12-06
申请号：US13152610
申请日：2011-06-03
申请人： Cheng-Heng Chen
发明人： Cheng-Heng Chen
IPC分类号： C23F1/02 , C03C15/00 , C23F1/16
CPC分类号： C03C15/00
摘要： A method of wet etching substrates for forming through holes to embed wafer level optical lens modules is provided. The provided etching method is capable of concurrently etching a plurality of substrates to form the through holes since bidirectional etching process is used. That means, all the desired through holes can be formed simultaneously during the wet etching process. Additionally, a plurality of substrates can be etched by each run of etching process. Thus, the newly provided wet etching method significantly and effectively reduces the process time and manufacturing cost.
摘要翻译：提供一种用于形成通孔以浸入晶片级光学透镜模块的湿蚀刻基板的方法。提供的蚀刻方法能够同时蚀刻多个基板以形成通孔，因为使用双向蚀刻工艺。这意味着，所有期望的通孔可以在湿蚀刻工艺期间同时形成。此外，可以通过每次蚀刻工艺蚀刻多个基板。因此，新提供的湿蚀刻方法显着有效地减少了处理时间和制造成本。

100. 发明申请

US20110147341A1 ETCHING SOLUTION FOR TITANIUM-BASED METAL, TUNGSTEN-BASED METAL, TITANIUM/TUNGSTEN-BASED METAL OR THEIR NITRIDES 审中-公开
标题翻译：基于金属的金属，基于金属的金属，基于金属或金属的金属或其氮化物的蚀刻解决方案
公开(公告)号：US20110147341A1
公开(公告)日：2011-06-23
申请号：US13060406
申请日：2009-08-25
申请人： Hironosuke Sato , Yasuo Saito
发明人： Hironosuke Sato , Yasuo Saito
IPC分类号： C23F1/16 , C09K13/00 , C23F1/00 , C23F1/26 , C23F1/30
CPC分类号： C23F1/38 , C23F1/44 , C23G1/205 , H01L21/32134
摘要： An etching solution for titanium-based metals, tungsten-based metals, titanium/tungsten-based metals or their nitrides. The etching solution contains 10-40 mass % hydrogen peroxide, 0.1-15 mass % of an organic acid salt, and water.
摘要翻译：用于钛基金属，钨基金属，钛/钨基金属或其氮化物的蚀刻溶液。蚀刻液含有10-40质量％的过氧化氢，0.1-15质量％的有机酸盐和水。

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