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91. 发明申请

US20220020896A1 INFRARED LIGHT EMITTERS BASED ON INTERBAND TUNNELING IN UNIPOLAR DOPED N-TYPE TUNNELING STRUCTURES 有权
公开(公告)号：US20220020896A1
公开(公告)日：2022-01-20
申请号：US17083286
申请日：2020-10-28
申请人： Wright State University
发明人： Elliott R. Brown , Weidong Zhang , Tyler Growden , Paul Berger
IPC分类号： H01L33/00 , H01L33/14 , H01L33/06 , H01S5/343 , H01S5/347
摘要： A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.

92. 发明申请

US20220013688A1 LED WITH INTERNALLY CONFINED CURRENT INJECTION AREA 有权
公开(公告)号：US20220013688A1
公开(公告)日：2022-01-13
申请号：US17388949
申请日：2021-07-29
申请人： Apple Inc.
发明人： Kelly McGroddy , Hsin-Hua Hu , Andreas Bibl , Clayton Ka Tsun Chan , Daniel Arthur Haeger
IPC分类号： H01L33/14 , H01L23/00 , H01L25/075 , H01L27/15 , H01L33/00 , H01L27/01 , H01L33/06 , H01L33/30 , H01L33/42
摘要： Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

93. 发明申请

US20220004304A1 TOUCH CONTROL MICRO LIGHT EMITTING DIODE DISPLAY APPARATUS, METHOD OF OPERATING TOUCH CONTROL MICRO LIGHT EMITTING DIODE DISPLAY APPARATUS, AND METHOD OF FABRICATING TOUCH CONTROL MICRO LIGHT EMITTING DIODE DISPLAY APPARATUS 有权
公开(公告)号：US20220004304A1
公开(公告)日：2022-01-06
申请号：US16769735
申请日：2019-07-10
申请人： BOE Technology Group Co., Ltd.
发明人： Shengji Yang , Xiaochuan Chen , Hui Wang
IPC分类号： G06F3/041 , H01L27/15 , H01L33/00 , H01L33/06 , H01L33/38 , G06F3/044 , G09G3/20 , G09G3/32
摘要： A touch control micro light emitting diode (micro LED) display apparatus is provided. The touch control micro LED display apparatus includes a base substrate; a first electrode layer on the base substrate; a second electrode layer on a side of the first electrode layer away from the base substrate, wherein the second electrode layer includes a plurality of second electrodes spaced apart from each other; an insulating layer on a side of the second electrode layer away from the base substrate; and a third electrode layer on a side of the insulating layer away from the base substrate, wherein the third electrode layer includes a plurality of third electrodes spaced apart from each other. The touch control micro LED display apparatus is operated in a time-division driving mode including an image display mode and a touch control mode.

94. 发明授权

US11217726B2 Nitride semiconductor ultraviolet light-emitting element 有权
公开(公告)号：US11217726B2
公开(公告)日：2022-01-04
申请号：US16969161
申请日：2018-02-14
申请人： Soko Kagaku Co., Ltd.
发明人： Akira Hirano , Yosuke Nagasawa , Shigefusa Chichibu , Kazunobu Kojima
IPC分类号： H01L33/32 , H01L33/06 , H01L33/00
摘要： To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element. In the n-type AlGaN-based semiconductor layer 21 constituting the nitride semiconductor light-emitting element 1, a plurality of thin film-like Ga-rich layers that is a part of the n-type layer 21 having a locally high Ga composition ratio exists spaced apart from each other in a vertical direction that is orthogonal to the upper surface of the n-type layer 21, an extending direction of at least a part of the plurality of Ga-rich layers on a first plane parallel to the vertical direction is inclined with respect to an intersection line between the upper surface of the n-type layer and the first plane, the plurality of Ga-rich layers exists in stripes on the second plane parallel to the upper surface of the n-type layer 21 in an upper layer region having a thickness of 100 nm or less at lower side from the upper surface of the n-type layer 21, AlN molar fractions of the Ga-rich layers 21b are greater than AlN molar fraction of a well layer 22b in an active layer 22 constituting the light-emitting element 1.

95. 发明申请

US20210408336A1 Nanowire Optical Device 有权
公开(公告)号：US20210408336A1
公开(公告)日：2021-12-30
申请号：US17293399
申请日：2019-10-31
申请人： Nippon Telegraph and Telephone Corporation
发明人： Masato Takiguchi , Masaya Notomi , Satoshi Sasaki , Kota Tateno , Atsushi Yokoo , Guoqiang Zhang , Sergent Sylvain , Akihiko Shinya
IPC分类号： H01L33/38 , G02B6/122 , H01L33/06 , H01L33/42 , H01S5/10 , H01S5/30
摘要： A nanowire optical device includes: a photonic crystal body having a planar shape and provided on a base part; an optical waveguide by a line defect in which a plurality of defects including a part without grating elements of the photonic crystal body are linearly arrayed; a trench formed in a waveguide direction in the optical waveguide; a nanowire made of a semiconductor and arranged in the trench; an n-type region formed on one end side of the nanowire; a p-type region formed on the other end side of the nanowire; an active region provided to be interposed between the n-type region and the p-type region in the nanowire; a first electrode connected to the n-type region; and a second electrode connected to the p-type region.

96. 发明申请

US20210408324A1 ENHANCED ROOM TEMPERATURE MID-IR LEDS WITH INTEGRATED SEMICONDUCTOR 'METALS' 有权
公开(公告)号：US20210408324A1
公开(公告)日：2021-12-30
申请号：US17358157
申请日：2021-06-25
申请人： Board of Regents, The University of Texas System
发明人： Daniel Wasserman , Seth Bank , Andrew Briggs , Leland Nordin
IPC分类号： H01L33/06 , H01L33/00 , H01L33/30
摘要： Mid-IR light emitting diodes (LEDs) based on type-II quantum dot (QD) active regions grown with monolithically integrated semiconductor metal layers are provided. These LEDs comprise layers of type-II semiconductor (e.g., InGaSb) quantum dots integrated into a pn junction diode (e.g., InAs) grown above a highly doped backplane, such as an n++ InAs backplane, all in the same epitaxial growth. Aspects described herein minimize non-radiate recombination times and significantly increase radiative recombination rates by controlling the emission of the emitting QDs in the near field of an optical metal.

97. 发明申请

US20210407798A1 Substrate For Epitaxial Growth, Method For Manufacturing The Same, Semiconductor Device Including The Same And Method For Manufacturing Semiconductor Device 有权
公开(公告)号：US20210407798A1
公开(公告)日：2021-12-30
申请号：US17359759
申请日：2021-06-28
申请人： FUJIAN JING' AN OPTOELECTRONICS CO., LTD
发明人： Juiping LI , Bohsiang TSENG , Jiahao ZHANG , Mingxin CHEN , Binbin LI , Yao HUO
IPC分类号： H01L21/02 , H01L33/00 , H01L33/06 , C30B25/18
摘要： A substrate for epitaxial growth includes a central region that has a center of the substrate and that serves as a non-modified region, and a peripheral region that surrounds the central region in a manner to be spaced apart from the center of the substrate by a distance and that serves as a modified region having a plurality of modified points. A method for manufacturing a substrate for epitaxial growth includes providing a substrate and forming a plurality of modified points in an interior of the substrate in position corresponding to the modified region. A semiconductor device including the substrate and a method for manufacturing the semiconductor device are also disclosed.

98. 发明申请

US20210391496A1 DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20210391496A1
公开(公告)日：2021-12-16
申请号：US17460116
申请日：2021-08-27
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Hyunmin CHO , Daehyun KIM , Sungchul KIM , Jonghyuk KANG , Keunkyu SONG , Jooyeol LEE , Hyundeok IM , Chio CHO , Hyeyong CHU , Sungjin HONG
IPC分类号： H01L33/00 , H01L25/075 , H01L33/62 , H01L27/15 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H05K1/11 , H05K1/18
摘要： A display apparatus includes a substrate, a first electrode on the substrate, the first electrode including a first portion that has a flat upper surface and a second portion that protrudes from the first portion and has an inclined surface, a second electrode facing the first electrode in parallel on the substrate, the second electrode including a first portion that has a flat upper surface and a second portion that protrudes from the first portion and has an inclined surface, and a plurality of light-emitting devices separate from each other on the first electrode and the second electrode, the light-emitting devices each having a first end contacting the upper surface of the first portion of the first electrode and a second end contacting the upper surface of the first portion of the second electrode.

99. 发明申请

US20210391274A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210391274A1
公开(公告)日：2021-12-16
申请号：US17354705
申请日：2021-06-22
申请人： EPISTAR CORPORATION
发明人： Yung-Chung PAN , Chang-Yu TSAI , Ching-Chung HU , Ming-Pao CHEN , Chi SHEN , Wei-Chieh LIEN
IPC分类号： H01L23/532 , H01L33/12 , H01L33/28 , H01L21/02 , H01L21/285 , H01L21/768 , H01L33/32 , H01L33/04 , H01L33/14 , H01L33/06
摘要： A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the first aluminum-containing layer and the active region, wherein the confinement layer includes a thickness smaller than the thickness of one of the barrier layers; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies in the electron blocking region.

100. 发明授权

US11201305B2 Display panel and method of manufacturing the same 有权
公开(公告)号：US11201305B2
公开(公告)日：2021-12-14
申请号：US16637537
申请日：2017-09-21
申请人： HKC Corporation Limited , Chongqing HKC Optoelectronics Technology Co., Ltd.
发明人： En-Tsung Cho
IPC分类号： H01L51/50 , H01L51/56 , H01L33/34 , H01L33/06 , H01L27/32
摘要： A display panel comprises a substrate, active switches and light-emitting diodes formed on the substrate. The active switches are disposed between the substrate and the light-emitting diodes. Each light-emitting diode comprises a first electrode, a second electrode, and a quantum dot luminescent layer. The quantum dot luminescent layer comprises a mesoporous frame. The mesoporous frame adopts a self-assembling form, the mesoporous frame serves as a main material, and quantum dots are disposed in the mesoporous frame. The first electrode, the quantum dot luminescent layer and the second electrode are stacked in order. Since the quantum dots are disposed in the mesoporous frame, the sizes of the quantum dots and the uniformity of their arrangement are adjusted and controlled, the light-emitting diodes with different luminous colors depending on the sizes of the quantum dots are then adjusted.

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