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    • 91. 发明申请
    • HIGH SENSITIVITY, SOLID STATE NEUTRON DETECTOR
    • 高灵敏度,固态中性探测器
    • US20110284755A1
    • 2011-11-24
    • US13146780
    • 2009-01-30
    • Pauls StradinsHoward M. BranzQi WangHarold R. Mchugh
    • Pauls StradinsHoward M. BranzQi WangHarold R. Mchugh
    • G01T3/08H01L21/28
    • H01L31/115G01T3/00G01T3/08H01L31/02
    • An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
    • 一种用于检测包括作为氢化非晶硅p-i-n二极管结构的α粒子检测层(240)的慢或热中子(160)的装置(200)。 该装置包括底部金属触点(220)和顶部金属触点(250),二极管结构(240)位于两个触点(220,250)之间,以便于检测α粒子(170)。 装置(200)包括由含有硼-10同位素的材料形成的中子转换层(230)。 顶部接触(250)被像素化,每个接触像素延伸到或靠近设备的边缘以促进电接触。 接触像素具有细长体以允许它们跨越装置表面(242)延伸,每个像素具有小的表面积,以基于连接到每个像素的电流尖峰检测电路或放大器匹配电容。 中子转换层(860)可以沉积在接触像素(830)上,例如使用纳米颗粒油墨的喷墨印刷。
    • 93. 发明申请
    • SPECTROSCOPIC FAST NEUTRON DETECTION AND DISCRIMINATING USING LI-BASED SEMICONDUCTORS
    • 利用基于Li的半导体进行光谱快速中和检测和分辨
    • US20100327170A1
    • 2010-12-30
    • US12491704
    • 2009-06-25
    • Adrian IvanDaniel Bruno McDevittBrent Allen Clothier
    • Adrian IvanDaniel Bruno McDevittBrent Allen Clothier
    • G01T3/08H01L31/08
    • G01T3/085H01L31/08H01L31/115
    • A neutron sensing material detector includes an anode; a cathode; and a semiconductor material disposed between the anode and the cathode. An electric field is applied between the anode and cathode. The semiconductor material is composed of a ternary composition of stoichiometry LiM2+GV and exhibits an antifluorite-type ordering, where the stoichiometric fractions are Li=1, M2+=1, and GV=1. Electron-hole pairs are created by absorption of radiation, and the electron-hole pairs are detected by the current they generate between the anode and the cathode. The anode may include an array of pixels to provide improved spatial and energy resolution over the face of the anode. The signal value for each pixel can be mapped to a color or grey scale normalized to all the other pixel signal values for a particular moment in time. A guard ring or guard grid may be provided to reduce leakage current.
    • 中子感测材料检测器包括阳极; 阴极 以及设置在阳极和阴极之间的半导体材料。 在阳极和阴极之间施加电场。 半导体材料由化学计量LiM2 + GV的三元组成组成,呈现出萤石型排序,化学计量分数为Li = 1,M2 + = 1,GV = 1。 通过吸收辐射产生电子 - 空穴对,并且通过它们在阳极和阴极之间产生的电流来检测电子 - 空穴对。 阳极可以包括像素阵列,以在阳极的表面上提供改善的空间和能量分辨率。 每个像素的信号值可以映射到对于特定时刻的所有其他像素信号值进行归一化的颜色或灰度。 可以提供保护环或保护栅,以减少泄漏电流。
    • 95. 发明申请
    • SOLID-STATE NEUTRON AND ALPHA PARTICLES DETECTOR AND METHODS FOR MANUFACTURING AND USE THEREOF
    • 固体中子和阿尔法粒子检测器及其制造和使用方法
    • US20090302226A1
    • 2009-12-10
    • US11883842
    • 2006-02-08
    • Michael M. SchieberAssaf ZuckGad Marom
    • Michael M. SchieberAssaf ZuckGad Marom
    • G01T1/178G01T3/08G01T1/24H01L21/00G01T1/26
    • G01T3/08
    • A solid-state detector for detection of neutron and alpha particles detector and methods for manufacturing and use thereof are described. The detector has an active region formed of a polycrystalline semiconductor compound comprising a particulate semiconductor material sensitive to neutron and alpha particles radiation imbedded in a binder. The particulate semiconductor material contains at least one element sensitive to neutron and alpha particles radiation, selected from a group including 10Boron, 6Lithium, 113Cadmium, 157Gadolinium and 199Mercury. The semiconductor compound is sandwiched between an electrode assembly configured to detect the neutron and alpha particles interacting with the bulk of the active region. The binder can be either an organic polymer binder or inorganic binder. The organic polymer binder comprises at least one polymer that can be selected from the group comprising polystyrene, polypropylene, Humiseal™ and Nylon-6. The inorganic binder can be selected from B2O3, PbO/B2O3/, Bi2O3/PbO, Borax glass, Bismuth Borate glass and Boron Oxide based glass.
    • 描述了用于检测中子和α粒子检测器的固态检测器及其制造和使用方法。 检测器具有由多晶半导体化合物形成的有源区,该多晶半导体化合物包含对嵌入在粘合剂中的中子和α粒子辐射敏感的微粒半导体材料。 颗粒状半导体材料含有至少一种对中子和α粒子辐射敏感的元素,其选自包括10Boron,6La,113Cadium,157Gadolinium和199Mercury的组。 半导体化合物被夹在被配置为检测与活性区域的大部分相互作用的中子和α粒子的电极组件之间。 粘合剂可以是有机聚合物粘合剂或无机粘合剂。 有机聚合物粘合剂包含至少一种可选自聚苯乙烯,聚丙烯,Humiseal TM和尼龙-6的聚合物。 无机粘合剂可以选自B2O3,PbO / B2O3 /,Bi2O3 / PbO,硼砂玻璃,硼酸铋玻璃和氧化硼基玻璃。
    • 96. 发明申请
    • RADIATION DIRECTIONAL FINDER AND ISOTOPE IDENTIFICATION SYSTEM
    • 辐射方向探测器和同位素识别系统
    • US20090294678A1
    • 2009-12-03
    • US12468334
    • 2009-05-19
    • DAVID L. FRANK
    • DAVID L. FRANK
    • G01T3/08G01T1/24
    • G01T1/2907G01T3/08
    • A system and method determine a direction associated with gamma and/or neutron radiation emissions. A first radiation photon count associated with a first detector in a detector set is received from the first detector. The first radiation photon count is associated with at least one radiation source. A second radiation photon count associated with a second detector in the detector set is received from the second detector. The first radiation photon count is compared to the second radiation photon count. One of the first detector and the second detector is identified to have detected a larger number of radiation photons than the other. The at least one radiation source is determined to be substantially in a direction in which the one of the first detector and the second detector that has detected the larger number of radiation photons is facing.
    • 系统和方法确定与伽马和/或中子辐射发射相关的方向。 从第一检测器接收与检测器组中的第一检测器相关联的第一辐射光子计数。 第一辐射光子计数与至少一个辐射源相关联。 从第二检测器接收与检测器组中的第二检测器相关联的第二辐射光子计数。 将第一辐射光子计数与第二辐射光子计数进行比较。 第一检测器和第二检测器中的一个被识别为已经检测到比另一个更大数量的辐射光子。 所述至少一个辐射源被确定为基本上在已经检测到更多数量的辐射光子面临的第一检测器和第二检测器中的一个的方向上。
    • 99. 发明申请
    • Neutron detection device and method of manufacture
    • 中子检测装置及制造方法
    • US20050082489A1
    • 2005-04-21
    • US10693847
    • 2003-10-20
    • Robert AugustHarold HughesPatrick McMarrRobert Whitlock
    • Robert AugustHarold HughesPatrick McMarrRobert Whitlock
    • G01T3/08H01L31/115
    • G01T3/08H01L31/115
    • A neutron detection device includes a neutron conversion layer in close proximity to an active semiconductor layer. The device is preferably based on the modification of existing conventional semiconductor memory devices. The device employs a conventional SRAM memory device that includes an SOI substrate. The SOI substrate includes an active semiconductor device layer, a base substrate and an insulating layer between the active semiconductor device layer and the base substrate. The base substrate layer is removed from the memory device by lapping, grinding and/or etching to expose the insulating layer. A neutron conversion layer is then formed on the insulating layer. The close proximity of the neutron conversion layer to the active semiconductor device layer yields substantial improvements in device sensitivity.
    • 中子检测装置包括紧邻有源半导体层的中子转换层。 该装置优选地基于现有的常规半导体存储器件的修改。 该器件采用包括SOI衬底的常规SRAM存储器件。 SOI衬底包括有源半导体器件层,基极衬底和有源半导体器件层与基底衬底之间的绝缘层。 通过研磨,研磨和/或蚀刻将基底层从存储器件中去除以暴露绝缘层。 然后在绝缘层上形成中子转换层。 中子转换层与活性半导体器件层的紧密接近产生了器件灵敏度的显着提高。