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91. 发明申请

US20220148899A1 WAFER BOAT STRUCTURE, AS WELL AS WAFER BOAT ASSEMBLY AND DIFFUSION FURNACE WITH SAME 有权
公开(公告)号：US20220148899A1
公开(公告)日：2022-05-12
申请号：US17487685
申请日：2021-09-28
申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.
发明人： Pengfei GAO
IPC分类号： H01L21/673 , H01L21/687 , C30B31/10
摘要： A wafer boat structure as well as a wafer boat assembly and a diffusion furnace with the wafer boat structure are provided. The wafer boat structure includes a supporting frame and a wafer supporting part. The supporting frame includes an upper supporting member and a lower supporting member. A plurality of supporting rods are arranged between the upper supporting member and the lower supporting member. An opening for access of wafers is formed between each two adjacent supporting rods. The wafer supporting part is arranged on the supporting rods for supporting the wafer. The wafer supporting part comprises a supporting plate and at least one wafer board. The wafer board is arranged on the inner side of the supporting rod so as to support the edge of the wafer.

92. 发明授权

US08231731B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08231731B2
公开(公告)日：2012-07-31
申请号：US13098993
申请日：2011-05-02
申请人： Kenichi Suzaki , Jie Wang
发明人： Kenichi Suzaki , Jie Wang
IPC分类号： C30B31/10 , C23C16/00
CPC分类号： C23C16/463 , C23C16/4401 , C23C16/4408 , C23C16/4411 , Y10S414/136 , Y10S414/137 , Y10S414/139 , Y10S438/905
摘要： A process for producing a semiconductor device, comprising the steps of conducting film formation on substrate (10) in reactor (1); and unloading the substrate (10) after film formation from the reactor (1) and thereafter effecting forced air cooling of the interior of the reactor (1) while the substrate (10) is absent in the reactor (1). The stress of deposited film adhering in the reactor (1) is increased over that exhibited at air cooling without blower so as to positively generate thermal stress with the result that the deposited film would undergo forced cracking over that exhibited at air cooling without blower. Microparticles scattered by the cracking are efficiently discharged from the reactor forcibly through purging in the reactor in the state of atmospheric pressure.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在反应器（1）中的衬底（10）上形成膜; 以及在成膜后从反应器（1）中卸载基板（10），然后在反应器（1）中不存在基板（10）的同时对反应器（1）的内部进行强制空气冷却。附着在反应器（1）中的沉积膜的应力比没有鼓风机的空气冷却显示出的沉积膜的应力增加，从而积极地产生热应力，结果是沉积膜将在没有鼓风机的空气冷却下显现出强制开裂。通过在大气压力的状态下通过在反应器中吹扫强制地将从裂化物散落的微粒有效排出反应堆。

93. 发明授权

US06881658B2 Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process 失效
标题翻译：用于热处理II-VI化合物半导体的工艺和设备，以及通过该工艺热处理的半导体
公开(公告)号：US06881658B2
公开(公告)日：2005-04-19
申请号：US10243198
申请日：2002-09-13
申请人： Yasuo Namikawa
发明人： Yasuo Namikawa
IPC分类号： H01L29/221 , C30B31/10 , C30B33/00 , H01L21/22 , H01L21/225 , H01L21/324 , H01L21/385 , H01L21/477 , H01L33/28 , H01L21/28
CPC分类号： H01L21/385 , C30B29/48 , C30B33/00 , H01L33/0095 , H01L33/28
摘要： A process of heat-treating II-VI compound semiconductors reduces the electrical resistivity without the decrease in crystallinity resulting from the increase in dislocation density. The process comprises the following steps:(a) placing at least one II-VI compound semiconductor in contact with aluminum in a heat-treating chamber having the inside surface formed by at least one material selected from the group consisting of pyrolytic born nitride, hexagonal-system boron nitride, sapphire, alumina, aluminum nitride, and polycrystalline diamond; and (b) heat-treating the II-VI compound semiconductor or semiconductors in a gaseous atmosphere containing the group II element constituting part of the II-VI compound semiconductor or semiconductors. A II-VI compound semiconductor is heat-treated by the foregoing process. An apparatus for heat-treating II-VI compound semiconductors comprises components for performing the foregoing process.
摘要翻译：一种热处理II-VI化合物半导体的方法降低了电阻率，而不会由于位错密度的增加而导致结晶度的降低。该方法包括以下步骤：（a）将至少一种与铝接触的II-VI化合物半导体放置在热处理室中，所述热处理室具有由至少一种选自热解出的氮化物，六方晶系的材料形成的内表面系统氮化硼，蓝宝石，氧化铝，氮化铝和多晶金刚石; 和（b）在构成II-VI族化合物半导体或半导体的一部分的II族元素的气氛气氛中热处理II-VI族化合物半导体或半导体。通过上述方法对II-VI化合物半导体进行热处理。用于热处理II-VI化合物半导体的装置包括用于执行上述方法的组分。

94. 发明授权

US5870526A Inflatable elastomeric element for rapid thermal processing (RTP) system 失效
标题翻译：用于快速热处理（RTP）系统的充气弹性体元件
公开(公告)号：US5870526A
公开(公告)日：1999-02-09
申请号：US895665
申请日：1997-07-17
申请人： Helmut Aschner , Helmut Merkle , Ulrich Walk , Dieter Zernickel
发明人： Helmut Aschner , Helmut Merkle , Ulrich Walk , Dieter Zernickel
IPC分类号： H01L21/26 , C23C16/44 , C30B25/08 , C30B31/10 , C30B35/00 , F27B5/10 , F27D7/06 , H01L21/00 , A21B2/00
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08 , C30B31/10 , C30B35/00 , H01L21/67115
摘要： A rapid thermal processing (RTP) chamber is disclosed, wherein a transparent plate and a body are sealed with a gas tight seal, and wherein the gas tight seal is activated by inflating an inflatable element.
摘要翻译：公开了一种快速热处理（RTP）室，其中透明板和主体用气密密封密封，并且其中气密密封通过使可充气元件膨胀来启动。

95. 发明授权

US5709543A Vertical heat treatment apparatus 失效
标题翻译：立式热处理设备
公开(公告)号：US5709543A
公开(公告)日：1998-01-20
申请号：US706530
申请日：1996-09-04
申请人： Tomohisa Shimazu
发明人： Tomohisa Shimazu
IPC分类号： H01L21/22 , C23C16/458 , C30B25/08 , C30B25/10 , C30B25/12 , C30B31/10 , C30B31/12 , C30B31/14 , H01L21/00 , H01L21/205 , H01L21/31 , H01L21/324 , F27D3/12
CPC分类号： H01L21/67098 , C23C16/4583 , C30B25/08 , C30B25/10 , C30B25/12 , C30B31/10 , C30B31/12 , C30B31/14
摘要： The vertical heat treatment apparatus according to the present invention in which a substrate holder holding a plurality of substrates-to-be-processed at a vertical interval is mounted on the top of a cap for opening and closing the bottom opening (furnace throat) of a vertical heat treatment furnace through a heat insulation structure for a heat treatment in the uniform heat region in the furnace, the heat insulation structure comprising support rods for supporting the substrate holder, and a plurality of thin heat insulation plates having insertion holes in which the support rods are loosely inserted in, and supported by the support rods, separated from each other by spacers at a prescribed interval in the direction of height of the support rods, whereby the heat insulation structure can have a simple structure and have decreased heat capacities, and throughput can be improved.
摘要翻译：根据本发明的垂直热处理装置，其中将保持多个待垂直间隔的基板的基板保持器安装在用于打开和关闭底部开口（炉喉）的盖的顶部一个垂直热处理炉，通过隔热结构在炉内均匀加热区域进行热处理，该隔热结构包括用于支撑衬底保持架的支撑杆，以及多个具有插入孔的薄隔热板，支撑杆松散地插入并由支撑杆支撑，在支撑杆的高度方向上以规定的间隔彼此隔开，由此隔热结构可以具有简单的结构并且具有降低的热容量，并且可以提高吞吐量。

96. 发明授权

US5605454A Four port tube to extend the life of quartz tubes used for the well drive process 失效
标题翻译：四口管延长石英管的寿命，用于井驱动过程
公开(公告)号：US5605454A
公开(公告)日：1997-02-25
申请号：US542090
申请日：1995-10-12
申请人： Craig A. Bellows , Curtis M. Herbert, Jr.
发明人： Craig A. Bellows , Curtis M. Herbert, Jr.
IPC分类号： C30B31/10 , C30B31/12 , F27D21/00 , F27D19/00
CPC分类号： F27D21/0014 , C30B31/10 , C30B31/12
摘要： A quartz tube with multiple thermocouple ports arranged along its radius allows for the quartz tube to be rotated while the thermocouple is always placed in the bottom position of the quartz tube. This avoids a problem of the sagging of the quartz tube. When quartz tubes are not rotated, the quartz tubes tend to start sagging from their top. By rotating the quartz tube different portions of the quartz tube are at the top at different times. By using multiple thermocouple ports arranged around the radius of the quartz tube, the thermocouple can be positioned at the bottom of the quartz tube for different orientations of the quartz tube.
摘要翻译：具有沿其半径布置的多个热电偶端口的石英管允许石英管旋转，同时热电偶总是位于石英管的底部位置。这避免了石英管的下垂问题。当石英管不旋转时，石英管往往从顶部开始下垂。通过旋转石英管，石英管的不同部分在不同时间处于顶部。通过使用围绕石英管半径布置的多个热电偶端口，热电偶可以位于石英管的底部，用于石英管的不同取向。

97. 发明授权

US5504346A Insitu detection of tube sagging in semiconductor diffusion furnace using a laser beam that is blocked when tube sags 失效
标题翻译：使用激光束在半导体扩散炉中管道下垂的现场检测，该激光束在管子下垂时被阻塞
公开(公告)号：US5504346A
公开(公告)日：1996-04-02
申请号：US308043
申请日：1994-09-16
申请人： Allen Page , Oscar L. Caton
发明人： Allen Page , Oscar L. Caton
IPC分类号： C30B25/12 , C30B31/10 , H01L21/00 , G01N21/86
CPC分类号： H01L21/67115 , C30B25/12 , C30B31/10
摘要： Semiconductor wafers are processed in a semiconductor diffusion furnace. During processing, the semiconductor wafers are placed in a quartz tube. Also during processing, a laser beam is transmitted below a top surface of the quartz tube. While the quartz tube is not sagging, the laser beam is detected with a detector. When the top surface of the quartz tube sags so that the laser beam is obstructed by the top surface, the laser beam is no longer detected by the detector. At this point the detector will alert an operator of the system that the top surface of the quartz tube is sagging so that the laser beam is obstructed by the top surface. The operator of the semiconductor diffusion furnace then may replace the quartz tube before damage is done to the semiconductor wafers.
摘要翻译：半导体晶片在半导体扩散炉中进行处理。在处理期间，将半导体晶片放置在石英管中。此外，在处理过程中，激光束在石英管的顶表面下方传递。当石英管不下垂时，用检测器检测激光束。当石英管的顶表面下垂时，激光束被顶表面阻挡，激光束不再被检测器检测到。此时，检测器将警告系统的操作者，石英管的顶表面下垂，使得激光束被顶表面阻挡。然后半导体扩散炉的操作者可以在对半导体晶片进行损伤之前替换石英管。

98. 发明授权

US5283089A Non-porous diffusion furnace components 失效
标题翻译：无孔扩散炉组件
公开(公告)号：US5283089A
公开(公告)日：1994-02-01
申请号：US434757
申请日：1989-11-13
申请人： Carl H. Bates
发明人： Carl H. Bates
IPC分类号： C30B31/10 , C30B31/14 , C30B35/00 , F27D5/00 , F16L59/00
CPC分类号： C30B35/002 , C30B31/10 , C30B31/14 , Y10T428/131 , Y10T428/1314 , Y10T428/259 , Y10T428/2993 , Y10T442/2975
摘要： Components for semiconductor diffusion furnaces are constructed of a high purity impervious silicon carbide or silicon nitride matrix deposited onto and within a pre-shaped fibrous matrix of silicon carbide or silicon nitride which contains sufficient nucleation aids to produce a structure having a density greater than about 85% of theoretical density. The impregnation of the matrix material into the fibrous reinforcement prevents undesired gaseous components from contaminating the atmosphere of the furnace, and the fibrous reinforcement provides strength combined with light weight.
摘要翻译：用于半导体扩散炉的部件由沉积在碳化硅或氮化硅的预成形纤维基质上并在其内部的高纯度不渗透碳化硅或氮化硅基体构成，其包含足够的成核助剂以产生密度大于约85的结构理论密度的百分比。将基质材料浸渍到纤维增强物中可防止不需要的气体组分污染炉子的气氛，并且纤维增强材料提供强度与重量的组合。

99. 发明授权

US5252807A Heated plate rapid thermal processor 失效
标题翻译：加热板快速热处理器
公开(公告)号：US5252807A
公开(公告)日：1993-10-12
申请号：US781813
申请日：1991-10-23
申请人： George Chizinsky
发明人： George Chizinsky
IPC分类号： C23C16/46 , C30B31/10 , C30B31/12 , H01L21/00 , H01L21/677 , F27D3/00 , H01L21/22
CPC分类号： H01L21/67748 , C23C16/46 , C23C16/463 , C30B31/103 , C30B31/12 , H01L21/67103
摘要： A rapid thermal processor for heat treating and cooling semiconductor material in an elongated process chamber having a base, side and top walls which enclose a heater plate assembly through which thin pins longitudinally move to carry workpieces vertically to and from the heater assembly. A cooling shutter is adapted in the chamber to shield the workpiece from the heater plate when the cooling process takes place. The chamber has gaseous ambient control means which regulates the type of atmosphere or vacuum in the chamber during heat processing of the workpieces.
摘要翻译：一种用于在细长处理室中热处理和冷却半导体材料的快速热处理器，其具有围绕加热器板组件的基座，侧壁和顶壁，薄壁销通过该组件纵向移动以将工件垂直地承载和从加热器组件运送。当冷却过程发生时，冷却挡板适于在室中屏蔽工件与加热器板。该室具有气态环境控制装置，其在工件的热处理期间调节腔室中的气氛类型或真空度。

100. 发明授权

US5178534A Controlled diffusion environment capsule and system 失效
标题翻译：控制扩散环境胶囊和系统
公开(公告)号：US5178534A
公开(公告)日：1993-01-12
申请号：US860560
申请日：1992-03-30
申请人： Christopher J. Bayne , Harold C. Guiver
发明人： Christopher J. Bayne , Harold C. Guiver
IPC分类号： C30B31/10 , C30B31/14 , C30B31/16
CPC分类号： C30B31/10 , C30B31/14 , C30B31/16
摘要： A controlled diffusion environment capsule system (10) is used with a conventional tubular high temperature furnace (12) as employed in semiconductor manufacturing. The system (10) includes a cantilever boat loading apparatus (14) and a quartz diffusion capsule (16). Wafer carriers (20) support semiconductor wafers (22) concentrically with capsule (16) in closely spaced relationship for processing in the furnace (12). The diffusion capsule (16) is supported on a pair of quartz rods (24). A quartz injector tube (28) extends the length of the diffusion capsule (16). The injector tube (28) has three rows of high aspect-ratio apertures (30) extending along its length to disperse nitrogen or other inert gas uniformly across the sufaces (32) of the wafers (22). A quartz extender (34) is connected to the distal end of the diffusion capsule (16), through which reactant gases are supplied to the capsule (16) for diffusion and/or oxidation, from an inlet source (35) of the reactant gases on the furnace tube near the extender (34). The extender (34) has two apertured baffle plates (36) and (38) which have holes (40) and (42) in patterns that are offset relative to one another. A third plate (44) has a larger hole (46) at its center. The hole (46) focuses reactant gases into the capsule and the holes (40) and (42) provide turbulence to the reactant gas stream prior to its entry into the capsule (16) to assure uniform mixing.
摘要翻译：与半导体制造中使用的常规管状高温炉（12）一起使用受控扩散环境胶囊系统（10）。系统（10）包括悬臂舟装载装置（14）和石英扩散胶囊（16）。晶片载体（20）以与密封件（16）同心的方式支撑半导体晶片（22），用于在炉子（12）中进行加工。扩散胶囊（16）被支撑在一对石英棒（24）上。石英注射管（28）延伸扩散胶囊（16）的长度。注射管（28）具有三列沿其长度延伸的高纵横比孔（30），以将氮气或其它惰性气体均匀地分散在晶片（22）的表面（32）上。石英延长器（34）连接到扩散胶囊（16）的远端，反应气体从反应物气体的入口源（35）向反应气体供给到胶囊（16）以进行扩散和/或氧化，在炉管附近的扩展器（34）上。扩展器（34）具有两个有孔的挡板（36）和（38），其具有相对于彼此偏移的图案中的孔（40）和（42）。第三板（44）在其中心具有较大的孔（46）。孔（46）将反应物气体聚集到胶囊中，并且孔（40）和（42）在其进入胶囊（16）之前向反应物气流提供湍流以确保均匀混合。

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