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91. 发明申请

US20130147551A1 AMPLIFYING APPARATUS 有权
标题翻译：放大装置
公开(公告)号：US20130147551A1
公开(公告)日：2013-06-13
申请号：US13610538
申请日：2012-09-11
申请人： Kouki TANJI , Eiichiro Otobe
发明人： Kouki TANJI , Eiichiro Otobe
IPC分类号： H03F3/217
CPC分类号： H03F1/0277 , H03F1/56 , H03F3/195 , H03F3/245 , H03F3/72 , H03F2200/387 , H03F2200/417 , H03F2200/423 , H03F2200/541 , H03F2203/7221 , H03F2203/7236
摘要： There is provided an amplifying apparatus which can prevent characteristic deterioration while reducing costs. The amplifying apparatus includes a first amplifier connected between an input terminal to which a high-frequency signal is input and an output terminal through which the high-frequency signal is output, including a bipolar transistor, and amplifying the high-frequency signal input from the input terminal; a second amplifier including a bipolar transistor, amplifying the high-frequency signal input from the input terminal, and having a lower maximum output power than that of the first amplifier; and a switching unit connected between the second amplifier and the output terminal, and selectively outputting the high-frequency signal amplified by the second amplifier through the output terminal.
摘要翻译：提供一种能够在降低成本的同时防止特性恶化的放大装置。放大装置包括连接在输入高频信号的输入端和输出高频信号的输出端之间的第一放大器，包括双极晶体管，并且放大从第二放大器输入的高频信号输入端子包括双极晶体管的第二放大器，放大从输入端输入的高频信号，并具有比第一放大器低的最大输出功率; 以及连接在第二放大器和输出端子之间的开关单元，并且通过输出端子选择性地输出由第二放大器放大的高频信号。

92. 发明申请

US20130135052A1 INTERFERENCE REDUCTION BETWEEN RF COMMUNICATIONS BANDS 有权
标题翻译：射频通信银行之间的干扰减少
公开(公告)号：US20130135052A1
公开(公告)日：2013-05-30
申请号：US13479816
申请日：2012-05-24
申请人： Roman Zbigniew Arkiszewski
发明人： Roman Zbigniew Arkiszewski
IPC分类号： H03F3/19 , H03F3/68
CPC分类号： H03F3/19 , H03F1/0227 , H03F1/0261 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/602 , H03F3/68 , H03F3/72 , H03F2200/171 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/336 , H03F2200/387 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/451 , H03F2200/504 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2203/21106 , H03F2203/21142 , H03F2203/21157
摘要： Radio frequency (RF) power amplifier (PA) circuitry and a PA envelope power supply are disclosed. The RF PA circuitry receives and amplifies an RF input signal to provide an RF output signal using an envelope power supply signal, which is provided by the PA envelope power supply. The RF PA circuitry operates in either a normal RF spectral emissions mode or a reduced RF spectral emissions mode. When reduced RF spectral emissions are required, the RF PA circuitry operates in the reduced RF spectral emissions mode. As such, at a given RF output power, during the reduced RF spectral emissions mode, RF spectral emissions of the RF output signal are less than during the normal RF spectral emissions mode. As a result, the reduced RF spectral emissions mode may be used to reduce interference between RF communications bands.
摘要翻译：公开了射频（RF）功率放大器（PA）电路和PA包络电源。 RF PA电路接收并放大RF输入信号，以使用由封装电源提供的包络电源信号来提供RF输出信号。 RF PA电路以正常RF频谱发射模式或降低的RF频谱发射模式工作。当需要降低RF频谱发射时，RF PA电路以降低的RF频谱发射模式工作。因此，在给定的RF输出功率下，在降低的RF频谱发射模式期间，RF输出信号的RF频谱发射小于在正常RF频谱发射模式期间的RF频谱发射。结果，降低的RF频谱发射模式可以用于减少RF通信频带之间的干扰。

93. 发明申请

US20130099864A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20130099864A1
公开(公告)日：2013-04-25
申请号：US13712547
申请日：2012-12-12
申请人： PANASONIC CORPORATION
发明人： Yasufumi KAWAI , Hiroyuki SAKAI
IPC分类号： H03F3/68 , H03F3/04
CPC分类号： H03F3/68 , H01P5/10 , H01P5/12 , H03F1/565 , H03F3/04 , H03F3/189 , H03F3/193 , H03F3/211 , H03F3/24 , H03F3/245 , H03F3/265 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/451 , H03F2200/534 , H03F2200/541 , H03F2203/21106 , H03F2203/21142
摘要： A power amplifier according to the present invention includes: an input-side transformer which has an annular primary coil which is a first metal line and a plurality of linear secondary coils which are second metal lines, and matches input impedance and divides the input signal into a plurality of split signals; push-pull amplifiers each including a pair of transistors for amplifying one of the split signals; and an output-side transformer which has an annular secondary coil which is a third metal line and a plurality of linear primary coils which are fourth metal lines, and combines the amplified split signals and matches output impedance, two input terminals of the pair of transistors being connected to each other via each of the second metal lines and two output terminal of the pair of transistors being connected to each other via each of the fourth metal lines.
摘要翻译：根据本发明的功率放大器包括：输入侧变压器，其具有作为第一金属线的环形初级线圈和作为第二金属线的多个线性次级线圈，并匹配输入阻抗并将输入信号分成多个分离信号; 每个推挽放大器包括一对用于放大其中一个分离信号的晶体管; 以及输出侧变压器，其具有作为第三金属线的环状次级线圈和作为第四金属线的多条线性初级线圈，并且组合放大的分离信号并匹配输出阻抗，所述一对晶体管的两个输入端子经由每个第二金属线彼此连接，并且该对晶体管的两个输出端通过第四金属线经由每个连接。

94. 发明授权

US08412136B2 Measuring load impedance of an amplifier driving a variable load 有权
标题翻译：测量驱动可变负载的放大器的负载阻抗
公开(公告)号：US08412136B2
公开(公告)日：2013-04-02
申请号：US12368995
申请日：2009-02-10
申请人： Apu Sivadas , Gireesh Rajendran , Subhashish Mukherjee
发明人： Apu Sivadas , Gireesh Rajendran , Subhashish Mukherjee
IPC分类号： H01Q11/12 , H04B1/04
CPC分类号： H03F1/565 , H03F3/245 , H03F3/45188 , H03F2200/336 , H03F2200/378 , H03F2200/451 , H03F2200/541 , H03F2203/45364 , H03F2203/45638 , H03F2203/45702 , H04B1/0458
摘要： According to an aspect of the present invention, the magnitude and phase angle of looking-in impedance driven by an amplifier are computed in digital domain during normal operation within a module containing the amplifier. In an embodiment, the computed magnitude and phase angle are used for impedance matching at a node driven by the amplifier. As a result, impedance matching may be obtained even in situations when the impedance changes during operation.
摘要翻译：根据本发明的一个方面，在包含放大器的模块的正常操作期间，由数字域计算由放大器驱动的吸入阻抗的幅度和相位角。在一个实施例中，所计算的幅度和相位角用于由放大器驱动的节点处的阻抗匹配。结果，即使在操作期间阻抗变化的情况下也可以获得阻抗匹配。

95. 发明申请

US20130057343A1 HIGH-FREQUENCY POWER AMPLIFYING DEVICE 有权
标题翻译：高频功率放大器件
公开(公告)号：US20130057343A1
公开(公告)日：2013-03-07
申请号：US13557643
申请日：2012-07-25
申请人： Masao KONDO
发明人： Masao KONDO
IPC分类号： H03F3/45 , H03F3/68
CPC分类号： H03F1/0277 , H03F3/211 , H03F3/245 , H03F3/72 , H03F2200/537 , H03F2200/541
摘要： The present invention provides a high-frequency power amplifying device capable of transmitting output power at high efficiency. For example, a high-frequency power amplifying device has first and second differential amplifiers and a transformer for matching output impedances of the differential amplifiers. Between differential output nodes of the first differential amplifier, an inductor, a switch, and an inductor are coupled in series. When the second differential amplifier is in an operating state and the first differential amplifier is in a non-operating state, the switch is controlled to be on. In this case, due to “off capacitance” in transistors of a differential pair included in the first differential amplifier, impedance on the first differential amplifier side seen from both ends of primary coils becomes a high impedance state (parallel resonance state) and, equivalently, the primary coils do not exert influence on the operation of the second differential amplifier.
摘要翻译：本发明提供能够高效率地发送输出功率的高频功率放大装置。例如，高频功率放大装置具有第一和第二差分放大器和用于匹配差分放大器的输出阻抗的变压器。在第一差分放大器的差分输出节点之间，电感器，开关和电感器串联耦合。当第二差分放大器处于工作状态并且第一差分放大器处于非工作状态时，开关被控制为接通。在这种情况下，由于包含在第一差分放大器中的差动对的晶体管中的关断电容，从初级线圈的两端看到的第一差分放大器侧的阻抗成为高阻抗状态（并联谐振状态），相当于初级线圈不会对第二差分放大器的工作产生影响。

96. 发明授权

US08362839B2 Cross-differential amplifier 有权
公开(公告)号：US08362839B2
公开(公告)日：2013-01-29
申请号：US13194845
申请日：2011-07-29
申请人： Seyed-Ali Hajimiri , Scott D. Kee , Ichiro Aoki
发明人： Seyed-Ali Hajimiri , Scott D. Kee , Ichiro Aoki
IPC分类号： H03F3/04
CPC分类号： H03F1/0211 , H03F3/04 , H03F3/191 , H03F3/217 , H03F3/2176 , H03F3/45475 , H03F3/605 , H03F3/68 , H03F2200/507 , H03F2200/537 , H03F2200/541 , H03F2203/45464 , H03F2203/45704 , H03F2203/45731
摘要： A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

97. 发明申请

US20120326754A1 High Performance Pre-Mixer Buffer in Wireless Communications Systems 有权
标题翻译：无线通信系统中的高性能预混频器缓冲器
公开(公告)号：US20120326754A1
公开(公告)日：2012-12-27
申请号：US13168143
申请日：2011-06-24
申请人： Amir Hadji-Abdolhamid , Ahmad Mirzaei , Hooman Darabi
发明人： Amir Hadji-Abdolhamid , Ahmad Mirzaei , Hooman Darabi
IPC分类号： H03K3/00
CPC分类号： H03K19/00 , H03F1/0261 , H03F3/189 , H03F3/245 , H03F3/45179 , H03F2200/27 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2200/555 , H03F2203/45394
摘要： According to one embodiment, a high performance buffer for use in a communications system includes first and second differential blocks. Each of the first and second differential blocks comprise one or more driving transistors for generating a driving current for a load of the high performance buffer, and a feedback path for adjusting the operation of the one or more driving transistors. The feedback path includes a feedback transistor for receiving a common mode bias voltage, wherein the common mode bias voltage depends at least in part on a threshold voltage of the feedback transistor. The feedback path includes a programmable resistor and capacitor to reduce out of band loop gain and the noise. The high performance buffer is configured to achieve a high linearity, low output impedance, and low noise, and is suitable for use as a pre-mixer buffer in a wireless communications system.
摘要翻译：根据一个实施例，用于通信系统的高性能缓冲器包括第一和第二差分块。第一和第二差分块中的每一个包括用于产生用于高性能缓冲器的负载的驱动电流的一个或多个驱动晶体管，以及用于调整一个或多个驱动晶体管的操作的反馈路径。反馈路径包括用于接收共模偏置电压的反馈晶体管，其中共模偏置电压至少部分地取决于反馈晶体管的阈值电压。反馈路径包括可编程电阻器和电容器，以减少带外环路增益和噪声。高性能缓冲器被配置为实现高线性度，低输出阻抗和低噪声，并且适合用作无线通信系统中的预混频器缓冲器。

98. 发明申请

US20120314795A1 High Output Power Digital TX 有权
标题翻译：高输出功率数字TX
公开(公告)号：US20120314795A1
公开(公告)日：2012-12-13
申请号：US13156751
申请日：2011-06-09
申请人： Sami Vilhonen
发明人： Sami Vilhonen
IPC分类号： H04L27/00
CPC分类号： H03F3/45179 , H03F3/2175 , H03F3/245 , H03F2200/336 , H03F2200/537 , H03F2200/541 , H03M1/804 , H04B2001/0491
摘要： The disclosed apparatus and corresponding method uses amplifiers and a differential combiner to control the output power of a digital-to-analog upconverter and to isolate In-phase and Quadrature branches of the upconverter. First and second upconverters convert In-phase and Quadrature portions of a baseband digital value to respective first/second In-phase (Ip/In) and first/second Quadrature (Qp/Qn) analog components at RF. First and second amplifiers respectively amplify Ip, In and Qp, Qn to respectively generate amplified Ip, In and Qp, Qn signals. The first and second amplifiers each operate at a 50% duty cycle and in an interleaved fashion such that only one amplifier is active to generate an output at any time, and such that the amplified signals are output in an interleaved fashion. A differential combiner combines the amplified signals to generate the RF analog signal representative of the baseband digital value.
摘要翻译：所公开的装置和相应的方法使用放大器和差分组合器来控制数模转换器的输出功率并隔离上变频器的同相和正交分支。第一和第二上变频器将基带数字值的同相和正交部分转换为RF处的相应的第一/第二同相（Ip / In）和第一/第二正交（Qp / Qn）模拟分量。第一和第二放大器分别放大Ip，In和Qp，Qn分别产生放大的Ip，In和Qp，Qn信号。第一和第二放大器各自以50％占空比和交错方式工作，使得只有一个放大器有效以在任何时间产生输出，并且使得放大的信号以交错方式输出。差分组合器组合放大的信号以产生表示基带数字值的RF模拟信号。

99. 发明申请

US20120307534A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20120307534A1
公开(公告)日：2012-12-06
申请号：US13587051
申请日：2012-08-16
申请人： Atsushi YAMADA
发明人： Atsushi YAMADA
IPC分类号： H01L29/267 , H02M7/00 , H01L21/336
CPC分类号： H02M7/537 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/66431 , H01L29/66462 , H01L29/7787 , H03F1/3247 , H03F2200/204 , H03F2200/541
摘要： An AlGaN/GaN-HEMT has a structure including: compound semiconductor layers formed on a substrate; a gate electrode, a gate pad that has a current path formed between the gate electrode and itself, and a semiconductor layer that is spontaneously polarized and piezoelectrically polarized, which are formed on the compound semiconductor layer; and a gate electrode connection layer formed on the semiconductor layer, wherein the gate electrode connection layer and the gate electrode are electrically connected with each other. This structure which is relatively simple allows the AlGaN/GaN-HEMT to realize an intended normally-off operation without causing such inconveniences as increase in a sheet resistance, increase in an on-resistance, and increase in a leakage current.
摘要翻译： AlGaN / GaN-HEMT具有包括：形成在基板上的化合物半导体层的结构; 栅电极，形成在栅电极和本身之间的电流通路的栅极焊盘和形成在化合物半导体层上的自发极化和压电极化的半导体层; 以及形成在所述半导体层上的栅电极连接层，其中所述栅电极连接层和所述栅电极彼此电连接。这种相对简单的结构允许AlGaN / GaN-HEMT实现预期的常关断操作，而不会引起诸如薄层电阻增加，导通电阻增加和漏电流增加的不便。

100. 发明授权

US08326253B2 Method and system for power amplifier (PA) with on-package matching transformer 有权
标题翻译：功率放大器（PA）与封装匹配变压器的方法和系统
公开(公告)号：US08326253B2
公开(公告)日：2012-12-04
申请号：US12787963
申请日：2010-05-26
申请人： Ahmadreza Rofougaran
发明人： Ahmadreza Rofougaran
IPC分类号： H04B1/16
CPC分类号： H03G1/0017 , H03F1/0227 , H03F1/565 , H03F3/195 , H03F3/245 , H03F3/45183 , H03F2200/102 , H03F2200/387 , H03F2200/541
摘要： Aspects of a system for a power amplifier with an on-package matching transformer may include a DC/DC converter that enables generation of a bias voltage level within an IC die based on an amplitude of an input signal to a PA circuit within the IC die. The bias voltage level may be applied to a transformer, which is external to the IC die but internal to an IC package containing the IC die and/or a circuit board containing the IC package. One or more amplifier bias voltage levels, derived from the bias voltage level applied to the transformer, may be applied to the PA circuit.
摘要翻译：具有片上匹配变压器的功率放大器的系统的方面可以包括DC / DC转换器，其能够基于IC模具内的PA电路的输入信号的幅度产生IC芯片内的偏置电压电平。偏置电压电平可以被施加到IC芯外部的变压器，但是内部包含IC芯片的IC封装和/或包含IC封装的电路板的变压器。从施加到变压器的偏置电压电平导出的一个或多个放大器偏置电压电平可以被施加到PA电路。

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