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91. 发明申请

US20060278994A1 Inverse chip connector 有权
标题翻译：反芯片连接器
公开(公告)号：US20060278994A1
公开(公告)日：2006-12-14
申请号：US11329875
申请日：2006-01-10
申请人： John Trezza
发明人： John Trezza
IPC分类号： H01L23/52
CPC分类号： H01L24/11 , H01L21/4853 , H01L21/6835 , H01L21/76898 , H01L23/427 , H01L23/48 , H01L23/481 , H01L23/488 , H01L23/49827 , H01L23/5389 , H01L23/552 , H01L23/66 , H01L24/02 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/75 , H01L24/81 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2221/68327 , H01L2221/68345 , H01L2221/68363 , H01L2221/68368 , H01L2223/6616 , H01L2223/6622 , H01L2224/02372 , H01L2224/0401 , H01L2224/114 , H01L2224/1147 , H01L2224/116 , H01L2224/11912 , H01L2224/13012 , H01L2224/13021 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/13099 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13184 , H01L2224/1358 , H01L2224/136 , H01L2224/13609 , H01L2224/16146 , H01L2224/16237 , H01L2224/24226 , H01L2224/45111 , H01L2224/75 , H01L2224/75305 , H01L2224/81001 , H01L2224/81011 , H01L2224/81054 , H01L2224/81136 , H01L2224/81193 , H01L2224/81203 , H01L2224/81204 , H01L2224/81825 , H01L2224/81894 , H01L2224/83102 , H01L2224/92125 , H01L2225/06513 , H01L2225/06524 , H01L2225/06531 , H01L2225/06534 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2225/06593 , H01L2225/06596 , H01L2924/00013 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01S5/02272 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/183 , H01S5/18308 , H01S2301/176 , H01L2924/00014 , H01L2924/00
摘要： A system for connecting a first chip to a second chip having a post on the first chip having a first metallic material, a recessed wall within the second chip and defining a well within the second chip, a conductive diffusion layer material on a surface of the recessed wall within the well, and a malleable electrically conductive material on the post, the post being dimensioned for insertion into the well such that the malleable electrically conductive material will deform within the well and, upon heating to at least a tack temperature for the malleable, electrically conductive material, will form an electrically conductive tack connection with the diffusion layer to create an electrically conductive path between the first chip and the second chip.
摘要翻译：一种用于将第一芯片连接到具有第一芯片上的柱的第二芯片的系统，具有第一金属材料，第二芯片内的凹陷壁，并且在第二芯片内限定阱，在所述第二芯片的表面上的导电扩散层材料凹陷的壁，以及位于柱上的可延展的导电材料，该柱的尺寸被设计成用于插入到井中，使得可延展的导电材料将在孔内变形，并且在加热至至少一个粘性温度用于可延展的导电材料将形成与扩散层的导电粘性连接，以在第一芯片和第二芯片之间形成导电路径。

92. 发明申请

US20060278980A1 Patterned contact 有权
标题翻译：图案联系人
公开(公告)号：US20060278980A1
公开(公告)日：2006-12-14
申请号：US11329576
申请日：2006-01-10
申请人： John Trezza , John Callahan , Gregory Dudoff
发明人： John Trezza , John Callahan , Gregory Dudoff
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L21/4853 , H01L21/6835 , H01L21/76898 , H01L23/427 , H01L23/48 , H01L23/481 , H01L23/488 , H01L23/49827 , H01L23/5389 , H01L23/552 , H01L23/66 , H01L24/02 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/75 , H01L24/81 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2221/68327 , H01L2221/68345 , H01L2221/68363 , H01L2221/68368 , H01L2223/6616 , H01L2223/6622 , H01L2224/02372 , H01L2224/0401 , H01L2224/114 , H01L2224/1147 , H01L2224/116 , H01L2224/11912 , H01L2224/13012 , H01L2224/13021 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/13099 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13184 , H01L2224/1358 , H01L2224/136 , H01L2224/13609 , H01L2224/16146 , H01L2224/16237 , H01L2224/24226 , H01L2224/45111 , H01L2224/75 , H01L2224/75305 , H01L2224/81001 , H01L2224/81011 , H01L2224/81054 , H01L2224/81136 , H01L2224/81193 , H01L2224/81203 , H01L2224/81204 , H01L2224/81825 , H01L2224/81894 , H01L2224/83102 , H01L2224/92125 , H01L2225/06513 , H01L2225/06524 , H01L2225/06531 , H01L2225/06534 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2225/06593 , H01L2225/06596 , H01L2924/00013 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01S5/02272 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/183 , H01S5/18308 , H01S2301/176 , H01L2924/00014 , H01L2924/00
摘要： A chip having at least one electrical contact having a first end proximate to the chip and a second end removed from the chip, the second end including a pattern configured to facilitate penetration of the at least one contact into a malleable contact on another chip, the pattern comprising a non-planar surface having a perimeter and a surface area, the surface area being larger than a planar surface of an identical perimeter.
摘要翻译：一种具有至少一个电触点的芯片，其具有靠近芯片的第一端和从芯片移除的第二端，第二端包括构造成便于将至少一个触点插入另一个芯片上的可延展触点的图案，图案包括具有周长和表面积的非平面表面，所述表面面积大于相同周边的平坦表面。

93. 发明授权

US07123638B2 Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant 有权
标题翻译：包含N型层和N型掺杂剂的隧道结结构
公开(公告)号：US07123638B2
公开(公告)日：2006-10-17
申请号：US10688600
申请日：2003-10-17
申请人： Michael Howard Leary , Danny E. Mars , Sungwon David Roh , Danielle R. Chamberlin , Ying-Lan Chang
发明人： Michael Howard Leary , Danny E. Mars , Sungwon David Roh , Danielle R. Chamberlin , Ying-Lan Chang
IPC分类号： H01S3/04 , H01L29/24 , H01L31/0336
CPC分类号： B82Y20/00 , H01S5/024 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3095 , H01S5/343
摘要： A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.
摘要翻译：隧道结结构包括第一半导体材料的n型隧道结层，第二半导体材料的p型隧道结层和隧道结层之间的隧道结。第一半导体材料包括镓（Ga），氮（N），砷（As），并掺杂有Ⅵ族掺杂剂。通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。掺杂第一半导体材料n型与第Ⅵ族掺杂剂使第一半导体材料中的掺杂浓度最大化，从而进一步提高隧道的可能性。

94. 发明申请

US20060171437A1 Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method 有权
公开(公告)号：US20060171437A1
公开(公告)日：2006-08-03
申请号：US11344421
申请日：2006-02-01
申请人： Takashi Takahashi
发明人： Takashi Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0425 , H01S5/06226 , H01S5/1021 , H01S5/18302 , H01S5/18308 , H01S5/1833 , H01S5/18358 , H01S5/2063 , H01S5/34306 , H01S5/3432
摘要： In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.

95. 发明授权

US07065124B2 Electron affinity engineered VCSELs 有权
标题翻译：电子亲和性工程VCSELs
公开(公告)号：US07065124B2
公开(公告)日：2006-06-20
申请号：US10767920
申请日：2004-01-29
申请人： James R. Biard , Ralph H. Johnson , Klein L. Johnson
发明人： James R. Biard , Ralph H. Johnson , Klein L. Johnson
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/18358 , H01S5/0421 , H01S5/18308 , H01S5/2009 , H01S5/205 , H01S5/3211 , H01S5/423 , H01S2301/166
摘要： A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.
摘要翻译：具有具有高带隙（低折射率）和低带隙（高折射率）AlGaAs层的交替层的N型布拉格反射镜的VCSEL。这些层可以通过Al组分的阶跃变化和随后的渐变区域分离，反之亦然，在N型反射镜中可以产生较低和更线性的串联电阻。此外，N型间隔层可以与量子阱的有源区相邻。从最近的N型反射镜层到由较低带隙的直接AlGaAs层形成的N型间隔物的Al组成变化可能有类似的步骤，以提供较低的自由载流子吸收。通过电子亲和力工程，可以在量子阱附近插入少数载流子阱屏障，以在高电流密度和高温下改善孔隙限制。

96. 发明授权

US07053415B2 Closely-spaced VCSEL and photodetector for application requiring their independent operation 失效
公开(公告)号：US07053415B2
公开(公告)日：2006-05-30
申请号：US10455005
申请日：2003-06-04
申请人： Stanley E. Swirhun , Jeffrey W. Scott
发明人： Stanley E. Swirhun , Jeffrey W. Scott
IPC分类号： H01L27/15
CPC分类号： H01S5/0262 , H01L31/105 , H01L31/125 , H01S5/02244 , H01S5/02248 , H01S5/02276 , H01S5/02284 , H01S5/0261 , H01S5/0264 , H01S5/06226 , H01S5/183 , H01S5/18308 , H01S5/18388 , H01S5/2063 , H01S2301/176
摘要： A monolithically integrated VCSEL and photodetector, and a method of manufacturing the same, are disclosed for applications where the VCSEL and photodetector require separate operation such as duplex serial data communications applications. A first embodiment integrates a VCSEL with an MSM photodetector on a semi-insulating substrate. A second embodiment builds layers of a p-i-n photodiode on top of layers forming a VCSEL using a standard VCSEL process. The p-i-n layers are etched away in areas where VCSELs are to be formed and left where photodetectors are to be formed. The VCSELs underlying the photodetectors are inoperable, and serve to recirculate photons which are not initially absorbed back into the photodetector. The transmit and receive pairs are packaged into a single package for interface to multifiber ferrules. The distance between the devices is precisely defined photolithographically, thereby making alignment easier. In a further alternate embodiment, a FET is coupled to the p-i-n photodiode to form an integrated detector preamplifier along with the VCSEL transmitter all on the same optical reference plane.

97. 发明申请

US20060029118A1 HIGH-POWER SINGLE-MODE VERTICAL CAVITY-SURFACE EMITTING LASER 审中-公开
标题翻译：大功率单模垂直空腔表面发射激光
公开(公告)号：US20060029118A1
公开(公告)日：2006-02-09
申请号：US11161426
申请日：2005-08-02
申请人： Chih-Cheng CHEN
发明人： Chih-Cheng CHEN
IPC分类号： H01S3/08
CPC分类号： H01S5/18394 , H01S5/028 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18377 , H01S2301/166
摘要： A vertical cavity-surface emitting laser (VCSEL) for emitting a single-mode laser including a multiple transverse mode VCSEL includes a top emitting region, and a dielectric film covering the top emitting region of the multiple transverse mode VCSEL completely, in order to limit the multiple transverse mode VCSEL to emit the single-mode laser.
摘要翻译：用于发射包括多个横向模式VCSEL的单模激光器的垂直空腔表面发射激光器（VCSEL）包括顶部发射区域和完全覆盖多个横向模式VCSEL的顶部发射区域的电介质膜，以便限制多重横向模式VCSEL发射单模激光器。

98. 发明申请

US20050286595A1 Optimizing mirror reflectivity for reducing spontaneous emissions in photodiodes 有权
标题翻译：优化镜面反射率，以减少光电二极管中的自发辐射
公开(公告)号：US20050286595A1
公开(公告)日：2005-12-29
申请号：US11027717
申请日：2004-12-30
申请人： James Guenter , Jimmy Tatum , James Biard
发明人： James Guenter , Jimmy Tatum , James Biard
IPC分类号： H01S5/00 , H01S5/026 , H01S5/183
CPC分类号： H01S5/0264 , H01S5/18308 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/2022 , H01S5/2027 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译：一种降低激光器有源区自发发射效应的光学结构。光学结构包括优化以减少自发辐射的影响。光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。光学结构还包括连接到VCSEL的光电二极管。可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明，并使用离子注入来降低光致发光效率。

99. 发明申请

US20050286587A1 Vertical cavity surface emitting laser optimized for thermal sensitivity 有权
标题翻译：垂直腔表面发射激光器针对热敏感度进行了优化
公开(公告)号：US20050286587A1
公开(公告)日：2005-12-29
申请号：US11093240
申请日：2005-03-29
申请人： James Guenter
发明人： James Guenter
IPC分类号： G06F3/03 , H01S5/00 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/183
CPC分类号： H01S5/18308 , G06F3/0312 , G06F3/0317 , G06F3/038 , G06F3/042 , H01S5/0425 , H01S5/0612 , H01S5/0618 , H01S5/0622 , H01S5/18311
摘要： A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench is formed in the at least the top mirror. An aperture is oxidized into the VCSEL. At least one of the bottom DBR mirror, the top DBR mirror, the metal contacts, the trench, and/or the aperture is optimized to make the VCSEL more thermally sensitive to changes in current through the VCSEL.
摘要翻译：针对自混合应用进行了优化的垂直腔面发射激光器（VCSEL）。 VCSEL通常包括形成在衬底上的底部分布式布拉格反射器（DBR）镜。在底部反射镜上形成有源区。在活动区域上形成顶部DBR镜。至少在上反射镜中形成沟槽。孔径被氧化成VCSEL。底部DBR镜，顶部DBR镜，金属触点，沟槽和/或孔中的至少一个被优化以使VCSEL对通过VCSEL的电流的变化更加热敏感。

100. 发明申请

US20050286583A1 Obsorbing layers for reduced spontaneous emission effects in an integrated photodiode 有权
标题翻译：吸收层用于降低集成光电二极管中的自发发射效应
公开(公告)号：US20050286583A1
公开(公告)日：2005-12-29
申请号：US11026095
申请日：2004-12-30
申请人： James Guenter , Jimmy Tatum , James Biard
发明人： James Guenter , Jimmy Tatum , James Biard
IPC分类号： H01S5/00 , H01S5/026 , H01S5/183
CPC分类号： H01S5/18308 , H01S5/0264 , H01S5/0425 , H01S5/18311 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/2022 , H01S5/2027 , H01S5/3054 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译：一种降低激光器有源区自发发射效应的光学结构。光学结构包括优化以减少自发辐射的影响。光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。光学结构还包括连接到VCSEL的光电二极管。可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明，并使用离子注入来降低光致发光效率。

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