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91. 发明申请

US20070090518A1 Microelectronic cooling apparatus and associated method 有权
标题翻译：微电子冷却装置及相关方法
公开(公告)号：US20070090518A1
公开(公告)日：2007-04-26
申请号：US11255678
申请日：2005-10-20
申请人： Ioan Sauciuc , Gregory Chrysler
发明人： Ioan Sauciuc , Gregory Chrysler
IPC分类号： H01L23/34
CPC分类号： H01L23/38 , H01L35/16 , H01L2224/73253 , H01L2924/12044 , H01L2924/16152
摘要： An apparatus and associated method to provide localized cooling to a microelectronic device are generally described. In this regard, according to one example embodiment, a cooling apparatus comprising a heat spreader and one or more thermoelectric cooler(s) thermally coupled to the heat spreader provides cooling to one or more hot spot(s) of a microelectronic device, the one or more thermoelectric cooler(s) having a single heat exchanging element of a single material.
摘要翻译：通常描述了向微电子器件提供局部冷却的装置和相关方法。在这方面，根据一个示例性实施例，包括散热器和热耦合到散热器的一个或多个热电冷却器的冷却装置向微电子器件的一个或多个热点提供冷却，一个或多个具有单个材料的单个热交换元件的热电冷却器。

92. 发明申请

US20070056621A1 Self-assembled thin film thermoelectric device 审中-公开
标题翻译：自组装薄膜热电装置
公开(公告)号：US20070056621A1
公开(公告)日：2007-03-15
申请号：US11227576
申请日：2005-09-14
申请人： Rajashree Baskaran
发明人： Rajashree Baskaran
IPC分类号： H01L35/34 , H01L35/28
CPC分类号： H01L35/32 , H01L35/16 , H01L35/34 , H01L2224/95085
摘要： A self-assembled thin film thermoelectric device useful for thermal management of semiconductor devices, for medical treatment, or for other applications where precise, efficient, and controlled heating or cooling may be useful. TEC elements, including n-type TEC elements and p-type TEC elements may be self-assembled to binding sites on a substrate, and alternating TEC element types may be electrically coupled to each other with metallization in a serial circuit arrangement. A substrate suitable for self-assembly of a TFTEC device may include heat generating devices, cooling devices, or thermally neutral devices. Binding sites may be provided or activated so that TEC elements may be attracted to, aligned with, or attached to the binding sites.
摘要翻译：可用于半导体器件，用于医疗处理或用于精确，有效和受控加热或冷却的其他应用的热管理的自组装薄膜热电装置可能是有用的。包括n型TEC元件和p型TEC元件的TEC元件可以自组装到衬底上的结合位置，并且交替的TEC元件类型可以通过串联电路布置中的金属化彼此电耦合。适用于TFTEC装置的自组装的基板可以包括发热装置，冷却装置或热中性装置。可以提供或激活结合位点，使得TEC元件可以被吸引到，结合位点或连接到结合位点。

93. 发明申请

US20070034838A1 Thermoelectric material and method for manufacturing the same 有权
标题翻译：热电材料及其制造方法
公开(公告)号：US20070034838A1
公开(公告)日：2007-02-15
申请号：US11357738
申请日：2006-02-16
申请人： Nobuyoshi Imaoka , Isao Morimoto , Lance Miller , Robert Schneidmiller , David Johnson
发明人： Nobuyoshi Imaoka , Isao Morimoto , Lance Miller , Robert Schneidmiller , David Johnson
IPC分类号： H01B1/12
CPC分类号： H01L35/16 , H01L35/34
摘要： Thermoelectric materials with a high Seebeck coefficient and a large power factor are provided. The materials are impact resistant and resistant to heat-distortion. Such materials include a rare earth element, Bi, and Te and have a rhombohedral crystal structure. In some examples, the rare earth element is selected from the group consisting of Ce, Sm and Yb. Such materials can be formed as films with a thickness of from 0.01 to 500 μm on a resin substrate. Production methods may include laminating different types of layers of thickness of 20 nm or less and heat-treating the resultant composition-modulated composite. The material may be separated from a substrate for sintering.
摘要翻译：提供具有高塞贝克系数和大功率因数的热电材料。这些材料具有抗冲击性和耐热变形性。这种材料包括稀土元素Bi和Te，并且具有菱方晶体结构。在一些实例中，稀土元素选自Ce，Sm和Yb。这样的材料可以在树脂基板上形成为厚度为0.01〜500μm的膜。生产方法可以包括层压20nm或更小厚度的不同类型的层，并对所得的组合物调制复合物进行热处理。该材料可以与用于烧结的基材分离。

94. 发明申请

US20060243314A1 Thermoelectric semiconductor material, thermoelectric semiconductor element therefrom, thermoelectric module including thermoelectric semiconductor element and process for producing these 审中-公开
标题翻译：热电半导体材料，其热电半导体元件，包括热电半导体元件的热电模块及其制造方法
公开(公告)号：US20060243314A1
公开(公告)日：2006-11-02
申请号：US10555855
申请日：2004-05-07
申请人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
发明人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
IPC分类号： H01L35/00
CPC分类号： H01L35/34 , B22D11/0611 , H01L35/16
摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the don of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
摘要翻译：制备金属混合物，其中将过量的Te加入到基于（Bi-Sb）2 N 3基团的组合物中。在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。原料热电半导体材料10在板厚方向上层叠。并且层状体被固化并形成以形成紧凑的12。之后，紧凑体12以这样的方式发生塑性变形，使得剪切力沿大致平行于原料热电半导体材料10的主层叠方向的单轴方向施加。结果，具有晶面取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的大致对准。结果，晶体取向得到改善，并且热电式的品质提高。

95. 发明申请

US20060118158A1 Nanostructured bulk thermoelectric material 有权
标题翻译：纳米结构体热电材料
公开(公告)号：US20060118158A1
公开(公告)日：2006-06-08
申请号：US11120731
申请日：2005-05-03
申请人： Minjuan Zhang , Yunfeng Lu
发明人： Minjuan Zhang , Yunfeng Lu
IPC分类号： H01L35/34 , H01L35/30 , H01L35/28 , H01L37/00
CPC分类号： H01L35/34 , C02F1/02 , C02F2103/02 , H01L35/16 , H01L35/26
摘要： A thermoelectric material comprises two or more components, at least one of which is a thermoelectric material. The first component is nanostructured, for example as an electrically conducting nanostructured network, and can include nanowires, nanoparticles, or other nanostructures of the first component. The second component may comprise an electrical insulator, such as an inorganic oxide, other electrical insulator, other low thermal conductivity material, voids, air-filled gaps, and the like. Additional components may be included, for example to improve mechanical properties. Quantum size effects within the nanostructured first component can advantageously modify the thermoelectric properties of the first component. In other examples, the second component may be a thermoelectric material, and additional components may be included.
摘要翻译：热电材料包括两种或多种组分，其中至少一种是热电材料。第一组分是纳米结构的，例如作为导电纳米结构网络，并且可以包括第一组分的纳米线，纳米颗粒或其他纳米结构。第二部件可以包括电绝缘体，例如无机氧化物，其它电绝缘体，其它低导热材料，空隙，充满空气的间隙等。可以包括另外的组分，例如以改善机械性能。在纳米结构化的第一组分内的量子尺寸效应可以有利地改变第一组分的热电性质。在其它实例中，第二组分可以是热电材料，并且可以包括另外的组分。

96. 发明申请

US20050271916A1 Thermoelectric conversion of heat released during use of a power-plant or hydrogen storage material 失效
标题翻译：使用发电厂或储氢材料时释放的热量的热电转换
公开(公告)号：US20050271916A1
公开(公告)日：2005-12-08
申请号：US11145857
申请日：2005-06-06
申请人： Jihui Yang , Mark Verbrugge , Jan Herbst
发明人： Jihui Yang , Mark Verbrugge , Jan Herbst
IPC分类号： C01B3/00 , H01L35/00 , H01L35/12 , H01L35/16 , H01M8/04 , H01M8/06 , H01M16/00
CPC分类号： H01M8/04701 , C01B3/0005 , C01B2203/066 , F17C11/005 , H01L35/00 , H01L35/16 , H01M8/04007 , H01M8/04216 , H01M8/065 , H01M16/003 , H01M16/006 , H01M2250/402 , Y02B90/12 , Y02E60/321 , Y02E60/324 , Y10S420/90
摘要： A method of generating electrical current in a system comprising a power-plant unit and/or hydrogen storage medium by transferring heat generated by the hydrogen storage medium and/or power-plant unit to a thermoelectric device, and converting the heat to generate electrical current using the thermoelectric device.
摘要翻译：一种在包括发电厂单元和/或氢存储介质的系统中通过将由氢存储介质和/或发电厂单元产生的热量传递到热电装置并且将热量转换以产生电流的方法来产生电流使用热电装置。

97. 发明授权

US06958443B2 Low power thermoelectric generator 失效
公开(公告)号：US06958443B2
公开(公告)日：2005-10-25
申请号：US10440992
申请日：2003-05-19
申请人： Ingo Stark , Peter Zhou
发明人： Ingo Stark , Peter Zhou
IPC分类号： H01L35/16 , H01L35/32 , H01L35/18
CPC分类号： H01L35/16 , H01L35/32
摘要： Disclosed is a foil segment for a thermoelectric generator comprising a top plate disposed in spaced relation above a bottom plate. An array of the foil segments is perpendicularly disposed in side-by-side arrangement between and in thermal contact with the bottom and top plates. Each foil segment comprises a substrate having a thickness of about 7.5-50 microns, opposing front and back substrate surfaces and a series of spaced alternating n-type and p-type thermoelectric legs disposed in parallel arrangement on the front substrate surface. Each of the n-type and p-type legs is formed of a bismuth telluride-based thermoelectric material having a thickness of about 5-100 microns, a width of about 10-100 microns and a length of about 100-500 microns. The alternating n-type and p-type thermoelectric legs are electrically connected in series and thermally connected in parallel such that a temperature differential between the bottom and top plates results in the generation of power.

98. 发明授权

US06942728B2 High performance p-type thermoelectric materials and methods of preparation 有权
标题翻译：高性能p型热电材料及其制备方法
公开(公告)号：US06942728B2
公开(公告)日：2005-09-13
申请号：US10262807
申请日：2002-10-01
申请人： Thierry Caillat , Alexander Borshchevsky , Jean-Pierre Fleurial
发明人： Thierry Caillat , Alexander Borshchevsky , Jean-Pierre Fleurial
IPC分类号： C22C1/04 , C22C12/00 , G01K7/04 , H01L35/16 , H01L35/18 , H01L35/34 , C30B29/48
CPC分类号： H01L35/18 , B22F2998/10 , B22F2999/00 , C22C1/0491 , C22C12/00 , G01K7/04 , H01L35/16 , H01L35/34 , B22F1/0085 , B22F9/04 , B22F3/14
摘要： The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.
摘要翻译：本发明体现在具有增强的热电性能的高性能p型热电材料和制备这种材料的方法中。在本发明的一个方面，式Zn 4-x A x Sb 3-y B y y的p型半导体，其中0 <= x <= 4，A是过渡金属，B是pnicogen，并且形成0 <= y <= 3，用于制造具有显着增强的操作特性和提高效率的热电器件。制备本发明的p型Zn 4 Sb 3 O 3和相关合金的两种方法包括晶体生长法和粉末冶金法。

99. 发明申请

US20050139250A1 Thermoelectric devices and applications for the same 审中-公开
标题翻译：热电器件和应用相同
公开(公告)号：US20050139250A1
公开(公告)日：2005-06-30
申请号：US11004611
申请日：2004-12-02
申请人： John DeSteese , Larry Olsen , John Johnston , Peter Martin , Timothy Peters
发明人： John DeSteese , Larry Olsen , John Johnston , Peter Martin , Timothy Peters
IPC分类号： H01L35/08 , H01L35/16 , H01L35/20 , H01L35/14 , H01L35/28
CPC分类号： H01L35/08 , H01L35/16
摘要： High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.
摘要翻译：公开了高性能薄膜热电偶及其制造方法。这种耦合允许至少在瓦特电平的电源装置中工作，即使在只有较小的温度差异的情况下，它们的工作电压大于一伏。

100. 发明申请

US20050076944A1 Silver-containing p-type semiconductor 有权
标题翻译：含银的p型半导体
公开(公告)号：US20050076944A1
公开(公告)日：2005-04-14
申请号：US10931295
申请日：2004-08-31
申请人： Mercouri Kanatzidis , Kuei-Fang Hsu
发明人： Mercouri Kanatzidis , Kuei-Fang Hsu
IPC分类号： H01L35/14 , H01L35/16 , H01L37/00
CPC分类号： H01L35/16
摘要： A thermoelectric composition comprises a material represented by the general formula (AgaX1−a)1±x(SnbPb1−b)mM′1−yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M′ is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently >0 and ≦1; x and y are independently >0 and
摘要翻译：热电组合物包含由通式（AgaX1-a）1±x（SnbPb1-b）mM'1-yQ2 + m表示的材料，其中X是Na，K，或任何比例的Na和K的组合; M'是选自Sb，Bi，镧系元素及其组合的三价元素; Q是选自S，Te，Se及其组合的硫属元素元素; a和b独立地> 0和<= 1; x和y独立地> 0和<1; 和2 <= m <= 30。组合物表现出高达约1.4或更高的品质因数ZT，并且可用作热电装置中的p型半导体。

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