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91. 发明申请

US20050173068A1 Gas delivery apparatus and method for atomic layer deposition 有权
公开(公告)号：US20050173068A1
公开(公告)日：2005-08-11
申请号：US11077753
申请日：2005-03-11
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , C23F1/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

92. 发明授权

US06919273B1 Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film 失效
标题翻译： TiSiN膜的形成方法，TiSiN膜的扩散防止膜及其制造方法以及TiSiN膜的形成装置
公开(公告)号：US06919273B1
公开(公告)日：2005-07-19
申请号：US10148952
申请日：1999-12-09
申请人： Hayashi Otsuki , Kunihiro Tada , Kimihiro Matsuse
发明人： Hayashi Otsuki , Kunihiro Tada , Kimihiro Matsuse
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/8242 , H01L23/485 , H01L27/108 , H01L29/49 , H01L21/44 , H01L21/4763
CPC分类号： C23C16/45514 , C23C16/34 , C23C16/45561 , C23C16/45565 , C23C16/45574 , H01L21/28088 , H01L21/28556 , H01L21/76843 , H01L21/76864 , H01L21/76871 , H01L23/485 , H01L27/10852 , H01L28/55 , H01L28/57 , H01L28/65 , H01L28/75 , H01L29/4966 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.
摘要翻译：使用TiSiN膜作为半导体器件的阻挡金属层，以防止Cu的扩散。 TiSiN膜通过等离子体CVD法或热CVD法形成。使用TiCl 4气体，氢化硅气体和NH 3气体作为用于通过热CVD法形成TiSiN膜的源气体。使用TiCl 4气体，氢化硅气体，H 2气体和N 2气体作为用于通过等离子体形成TiSiN膜的源气体 CVD工艺。

93. 发明授权

US06905726B2 Component having at least two mutually adjacent insulating layers and corresponding production method 失效
标题翻译：具有至少两个相互相邻的绝缘层的组分和相应的制备方法
公开(公告)号：US06905726B2
公开(公告)日：2005-06-14
申请号：US09817967
申请日：2001-03-27
申请人： Klaus Lowack , Günter Schmid , Recai Sezi
发明人： Klaus Lowack , Günter Schmid , Recai Sezi
IPC分类号： C23C26/00 , C23C28/00 , H01L21/768 , H01L23/498 , H01L23/532 , B05D3/04
CPC分类号： H01L21/76871 , C23C26/00 , C23C28/00 , H01L21/76826 , H01L23/49894 , H01L23/5329 , H01L2924/0002 , Y10T428/24942 , H01L2924/00
摘要： The invention relates to a component having two adjacent insulating layers and to a production process therefore. The component has an activated insulating layer, which can be converted into an electrically conductive layer by metallization.
摘要翻译：本发明涉及一种具有两个相邻绝缘层的部件及其制造方法。该组件具有激活的绝缘层，其可以通过金属化转换成导电层。

94. 发明授权

US06893541B2 Multi-step process for depositing copper seed layer in a via 失效
标题翻译：用于在通孔中沉积铜晶种层的多步法
公开(公告)号：US06893541B2
公开(公告)日：2005-05-17
申请号：US10326496
申请日：2002-12-20
申请人： Tony P. Chiang , Yu D. Cong , Peijun Ding , Jianming Fu , Howard H. Tang , Anish Tolia
发明人： Tony P. Chiang , Yu D. Cong , Peijun Ding , Jianming Fu , Howard H. Tang , Anish Tolia
IPC分类号： C23C14/34 , C23C14/04 , C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole.
摘要翻译：用于溅射铜的直流磁控溅射反应器，其使用方法，以及屏蔽和促进自离子等离子体（SIP）溅射的其它部件，优选在低于5毫托的压力，优选低于1毫托的压力下。另外，使用SIP将第一铜层涂覆在窄的和深的通孔或沟槽中的方法。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 SIP铜层可以作为用常规溅射（PVD）或电化学电镀（ECP）进行孔填充的晶种和成核层。对于非常高的纵横比孔，通过化学气相沉积（CVD）在SIP铜成核层上沉积铜籽晶层，并且PVD或ECP完成孔填充。可以通过SIP和高密度等离子体溅射的组合来沉积铜籽晶层。对于非常窄的孔，CVD铜层可以填充孔。

95. 发明申请

US20050085068A1 Method of depositing a metal seed layer on semiconductor substrates 失效
标题翻译：在半导体衬底上沉积金属种子层的方法
公开(公告)号：US20050085068A1
公开(公告)日：2005-04-21
申请号：US10981319
申请日：2004-11-03
申请人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen Chen , Barry Chin , Gene Kohara , Zheng Xu , Hong Zhang
发明人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen Chen , Barry Chin , Gene Kohara , Zheng Xu , Hong Zhang
IPC分类号： H01L21/285 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/165 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76877 , H01L21/76879 , H01L21/76883
摘要： We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, said method comprising the steps of a) applying a first portion of a sculptured layer with sufficiently low substrate bias that a surface onto which said sculptured layer is applied is not eroded away or contaminated in an amount which is harmful to said semiconductor device performance or longevity; and b) applying a subsequent portion of said sculptured layer with sufficiently high substrate bias to sculpture a shape from said the first portion, while depositing additional layer material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces and is especially helpful when the conductive layer is copper. In the application of a barrier layer, a first portion of barrier layer material is deposited on the substrate surface using standard sputtering techniques or using an ion deposition plasma, but in combination with sufficiently low substrate bias voltage (including at no applied substrate voltage) that the surfaces impacted by ions are not sputtered in an amount which is harmful to device performance or longevity. Subsequently, a second portion of barrier material is applied using ion deposition sputtering at increased substrate bias voltage which causes resputtering (sculpturing) of the first portion of barrier layer material, while enabling a more anisotropic deposition of newly depositing material. A conductive material, and particularly a copper seed layer applied to the feature may be accomplished using the same sculpturing technique as that described above with reference to the barrier layer.
摘要翻译：我们公开了使用离子沉积溅射在半导体特征表面上施加雕刻层的材料的方法，其中施加有雕刻层的表面被保护以通过冲击沉积层的离子来抵抗侵蚀和污染，所述方法包括步骤：a）以足够低的衬底偏压施加雕刻层的第一部分，使得施加所述雕刻层的表面不会以对所述半导体器件的性能或寿命有害的量被腐蚀掉或污染; 以及b）将所述雕刻层的后续部分施加足够高的衬底偏压，以从所述第一部分雕刻形状，同时沉积附加层材料。该方法特别适用于在半导体特征表面上雕刻阻挡层，润湿层和导电层，并且当导电层是铜时尤其有用。在施加阻挡层时，使用标准溅射技术或使用离子沉积等离子体将阻挡层材料的第一部分沉积在衬底表面上，但是与足够低的衬底偏置电压（包括没有施加的衬底电压）组合，受离子影响的表面不会以对器件性能或寿命有害的量溅射。随后，使用离子沉积溅射在增加的衬底偏置电压下施加阻挡材料的第二部分，这导致阻挡层材料的第一部分的再溅射（雕刻），同时能够进行更多的各向异性沉积新沉积的材料。应用于特征的导电材料，特别是铜种子层可以使用与上述参考阻挡层所述相同的雕刻技术来实现。

96. 发明申请

US20050014358A1 Semiconductor device having void free contact and method for fabricating the contact 失效
标题翻译：具有无空隙接触的半导体器件和用于制造接触的方法
公开(公告)号：US20050014358A1
公开(公告)日：2005-01-20
申请号：US10893618
申请日：2004-07-15
申请人： Bi-O Lim
发明人： Bi-O Lim
IPC分类号： H01L21/28 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/76862 , H01L21/76871 , H01L21/76877 , H01L2221/1089
摘要： The present invention relates to a semiconductor device and a method for fabricating a contact of the semiconductor device, and in particular, to the method for fabricating a semiconductor contact of the device for electrically coupling upper and lower metal wires or coupling an electrode and a metal wire and a method for fabricating the contact. The method comprises forming an interlayer insulating layer on a semiconductor substrate; forming a contact hole by selectively removing the interlayer insulating layer; forming a barrier metal layer on a surface of the interlayer insulating layer; increasing roughness of a surface of the interlayer insulating layer at an area around an inlet of the contact hole; forming a contact by filling the contact hole with a conductive material. According to this method, the conductive layer is slowly deposited around the inlet of the contact hole relative to the other areas of the contact hole, such that it is possible to form a void free contact with high aspect ration.
摘要翻译：本发明涉及一种用于制造半导体器件的接触的半导体器件和方法，特别涉及用于制造用于电耦合上下金属线或耦合电极和金属的器件的半导体接触的方法线和用于制造接触的方法。该方法包括在半导体衬底上形成层间绝缘层; 通过选择性地去除所述层间绝缘层来形成接触孔; 在所述层间绝缘层的表面上形成阻挡金属层; 在接触孔的入口周围的区域增加层间绝缘层的表面的粗糙度; 通过用导电材料填充接触孔来形成接触。根据该方法，导电层相对于接触孔的其他区域缓慢地沉积在接触孔的入口周围，使得可以形成具有高的纵向比例的无空隙接触。

97. 发明授权

US06812143B2 Process of forming copper structures 失效
标题翻译：形成铜结构的工艺
公开(公告)号：US06812143B2
公开(公告)日：2004-11-02
申请号：US10279057
申请日：2002-10-24
申请人： Michael Lane , Fenton Read McFeely , Conal Murray , Robert Rosenberg
发明人： Michael Lane , Fenton Read McFeely , Conal Murray , Robert Rosenberg
IPC分类号： H01L2144
CPC分类号： H01L21/32051 , H01L21/76846 , H01L21/76871 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The barrier material of the invention provides for the electrodeposition of copper. The barrier layer includes a dielectric interface surface region, and a copper interface surface region with at least 50 atom percent of a copper interface metal. In particular, the barrier layer of the invention provides for the electrodeposition of copper or copper alloy directly onto the copper interface region of the barrier layer in a direct electrodeposition process. The process includes providing a dielectric layer disposed on an underlayer, contacting a barrier layer to the dielectric layer, and depositing a conducting layer onto the barrier layer.
摘要翻译：本发明的阻挡材料提供铜的电沉积。阻挡层包括介电界面表面区域和具有至少50原子百分比的铜界面金属的铜界面表面区域。特别地，本发明的阻挡层提供在直接电沉积工艺中将铜或铜合金直接电沉积在阻挡层的铜界面区域上。该方法包括提供设置在底层上的电介质层，使阻挡层与电介质层接触，并将导电层沉积在阻挡层上。

98. 发明申请

US20040178504A1 Method for forming a void free via 有权
标题翻译：形成无空隙通孔的方法
公开(公告)号：US20040178504A1
公开(公告)日：2004-09-16
申请号：US10385824
申请日：2003-03-11
发明人： Alfred J. Griffin JR. , Adel El Sayed , John P. Campbell , Clint L. Montgomery
IPC分类号： H01L023/48 , H01L021/4763
CPC分类号： H01L21/76843 , H01L21/7685 , H01L21/76858 , H01L21/76871 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A multilevel metal and via structure is described. The metal conductors include a base or seed layer, a bulk conductor layer, a capping layer, and a barrier layer, and the via structure include a seed layer, a diffusion barrier layer and a metal plug. The via seed layer is controlled to a thickness that discourages the reaction between the via seed layer and the bulk conductor layer. The reaction may result in the formation of harmful voids at the bottom of the vias and is caused by having the via seed metal coming in contact with the bulk conductor through openings in the barrier layer.
摘要翻译：描述了多层金属和通孔结构。金属导体包括基底或种子层，体导体层，覆盖层和阻挡层，并且通孔结构包括种子层，扩散阻挡层和金属插塞。通孔种子层被控制到阻止通孔种子层和体导体层之间的反应的厚度。反应可能导致在通孔底部形成有害空隙，并且是由于通孔种子金属通过阻挡层中的开口与体导体接触而引起的。

99. 发明申请

US20040105934A1 Ruthenium layer formation for copper film deposition 失效
标题翻译：用于铜膜沉积的钌层形成
公开(公告)号：US20040105934A1
公开(公告)日：2004-06-03
申请号：US10634662
申请日：2003-08-04
发明人： Mei Chang , Seshadri Ganguli , Nirmalya Maity
IPC分类号： C23C016/00
CPC分类号： H01L21/76874 , B82Y30/00 , C23C16/18 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/76873
摘要： A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate.
摘要翻译：描述了用于高纵横比的互连特征的钌层形成方法。使用循环沉积工艺形成钌层。循环沉积工艺包括在基底结构上交替地吸附含钌前体和还原气体。吸附的含钌前驱体与吸附的还原气体反应，以在衬底上形成钌层。

100. 发明申请

US20030121608A1 Gas delivery apparatus for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US20030121608A1
公开(公告)日：2003-07-03
申请号：US10281079
申请日：2002-10-25
申请人： APPLIED MATERIALS, INC.
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
IPC分类号： C23C016/00 , C23F001/00 , F17D001/16
CPC分类号： C23C16/34 , C23C16/4404 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76871 , Y10T137/0396
摘要： An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.
摘要翻译：提供了一种用于执行诸如原子层沉积的循环层沉积工艺的装置和方法。一方面，该装置包括具有基板接收表面的基板支撑件和包括从腔室盖的中心部分延伸的锥形通道的腔室盖和从通道延伸到腔室盖的周边部分的底面，所述底表面的形状和尺寸基本上覆盖所述基板接收表面。该装置还包括联接到逐渐扩大的通道的一个或多个阀以及联接到每个阀的一个或多个气体源。

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