专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US07488987B2 Boron phosphide-based semiconductor light-emitting device and production method thereof 有权
标题翻译：硼化磷系半导体发光元件及其制造方法
公开(公告)号：US07488987B2
公开(公告)日：2009-02-10
申请号：US12040107
申请日：2008-02-29
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L21/02381 , H01L21/02458 , H01L21/02461 , H01L21/0254 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/28575 , H01L33/145 , H01L33/16 , H01L33/30
摘要： A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from the first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a high-resistance boron phosphide-based semiconductor amorphous layer or a first boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of said first semiconductor layer; a pad electrode formed on said high-resistance or opposite conductivity-type boron phosphide-based semiconductor amorphous layer for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive boron phosphide-based crystalline layer extending optionally to a portion of said boron phosphide-based semiconductor amorphous layer, wherein said pad electrode is in contact with said boron phosphide-based semiconductor crystalline layer at a portion of said pad electrode above the bottom of said pad electrode.
摘要翻译：一种磷化硼基半导体发光器件，包括：晶体衬底; 形成在所述结晶基板上的第一半导体层，所述第一半导体层包括用作基底层并具有不同于所述第一区域的第一区域和第二区域的发光层; 形成在所述第一半导体层的所述第一区域上的磷化硅基半导体非晶层，所述磷化磷基半导体非晶层包括高电阻磷化硼基半导体非晶层或第一磷化硼基半导体非晶层，与所述第一半导体层相反的导电类型; 形成在所述高电阻或相反导电型磷化硅基半导体非晶层上的焊盘电极，用于建立引线键合; 以及形成在所述第一半导体层的所述第二区域上的导电磷化硼基晶体层，所述导电磷化硼基晶体层任选地延伸到所述磷化硼基半导体非晶层的一部分，其中所述焊盘电极接触所述磷化硅基半导体晶体层在所述焊盘电极的位于所述焊盘电极的底部之上的部分处。

92. 发明授权

US07470941B2 High power-low noise microwave GaN heterojunction field effect transistor 有权
标题翻译：高功率低噪声微波GaN异质结场效应晶体管
公开(公告)号：US07470941B2
公开(公告)日：2008-12-30
申请号：US10313374
申请日：2002-12-06
申请人： Miroslav Micovic , Mike Antcliffe , Tahir Hussain , Paul Hashimoto
发明人： Miroslav Micovic , Mike Antcliffe , Tahir Hussain , Paul Hashimoto
IPC分类号： H01L31/0328
CPC分类号： H01L29/66462 , H01L21/28575 , H01L21/28581 , H01L21/28587 , H01L29/2003 , H01L29/7787
摘要： A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.
摘要翻译：提出了一种用于制造异质结场效应晶体管（HFET）和一系列HFET层结构的方法。在该方法中，执行将HFET半导体结构沉积到衬底上的步骤。接下来，沉积光致抗蚀剂材料。对应于源极和漏极焊盘对，去除部分光致抗蚀剂材料。金属层沉积在结构上，形成源极焊盘和漏极焊盘对。去除光致抗蚀剂材料，将其暴露于不同于源极和漏极焊盘对的区域中。每个源极和漏极焊盘对具有相应的曝光区域。该结构进行退火，并且器件是电隔离的。蚀刻每个器件的暴露面积以形成栅极凹部，并且在凹部中形成栅极结构。还提出了用于GaN / AlGaN HFET的半导体层结构。

93. 发明申请

US20080286894A1 GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE AND PROCESS FOR PREPARING THE SAME 审中-公开
标题翻译：基于氮化镓的半导体发光二极管及其制备方法
公开(公告)号：US20080286894A1
公开(公告)日：2008-11-20
申请号：US12166113
申请日：2008-07-01
申请人： Seung Wan CHAE , Jun Sub KWAK , Hyoun Soo SHIN , Jun Ho SEO
发明人： Seung Wan CHAE , Jun Sub KWAK , Hyoun Soo SHIN , Jun Ho SEO
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L29/452 , H01L33/32 , H01L33/40 , H01L33/42 , H01L2924/10155
摘要： A process for preparing a gallium nitride based semiconductor light emitting diode includes the step of: providing a substrate for growing a gallium nitride based semiconductor material; forming a lower clad layer on the substrate using a first conductive gallium nitride based semiconductor material; forming an active layer on the lower conductive clad layer using an undoped gallium nitride based semiconductor material; forming an upper clad layer on the active layer using a second conductive gallium nitride based semiconductor material; removing at least a portion of the upper clad layer and active layer at a predetermined region so as to expose the corresponding portion of the lower clad layer; and forming, on the upper surface of the upper clad layer, an ohmic contact forming layer made of In2O3 including at least one of Zn, Mg and Cu.
摘要翻译：一种制备氮化镓基半导体发光二极管的方法包括以下步骤：提供用于生长氮化镓基半导体材料的衬底; 使用第一导电氮化镓基半导体材料在所述衬底上形成下包层; 使用未掺杂的氮化镓基半导体材料在所述下导电覆层上形成有源层; 使用第二导电氮化镓基半导体材料在所述有源层上形成上覆层; 在预定区域去除上包层和有源层的至少一部分，以暴露下包层的相应部分; 以及在所述上包层的上表面上形成包括Zn，Mg和Cu中的至少一种的由In 2 O 3 3构成的欧姆接触形成层。

94. 发明申请

US20080246049A1 Semiconductor Device, Method for Fabricating an Electrode, and Method for Manufacturing a Semiconductor Device 失效
标题翻译：半导体器件，制造电极的方法以及制造半导体器件的方法
公开(公告)号：US20080246049A1
公开(公告)日：2008-10-09
申请号：US10574850
申请日：2006-02-21
申请人： Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L33/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40 , H01S5/2231 , H01S5/34333 , H01S2301/173 , H01S2304/00
摘要： A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).
摘要翻译：半导体器件包括p型氮化物半导体层（14）; 和包括与氮化物半导体层（14）的表面连接的氧化钯膜（30）的p侧电极（18）。

95. 发明申请

US20080176391A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080176391A1
公开(公告)日：2008-07-24
申请号：US12018454
申请日：2008-01-23
申请人： Hirotaka MIYAMOTO , Akiyoshi TAMURA , Keiichi MURAYAMA , Kenichi MIYAJIMA
发明人： Hirotaka MIYAMOTO , Akiyoshi TAMURA , Keiichi MURAYAMA , Kenichi MIYAJIMA
IPC分类号： H01L21/44
CPC分类号： H01L21/28575 , H01L29/452 , H01L29/66318 , H01L29/7371
摘要： The present invention has an object of providing a method for manufacturing a semiconductor device which can prevent occurrence of pattern abnormality of an electrode and deterioration of an electronic property. The method for manufacturing the semiconductor device including a GaAs substrate with a portion made of GaAs includes: forming a Ti/Pt/Au/Ti electrode on the GaAs substrate, the electrode including Pt and having a layered structure in which a top layer made of Ti; forming a collector electrode including AuGe on a portion made of GaAs; and performing heat treatment on the collector electrode in a state where both of the Ti/Pt/Au/Ti electrode and the collector electrode are exposed to a surface.
摘要翻译：本发明的目的是提供一种能够防止电极的图案异常发生和电子特性劣化的半导体装置的制造方法。制造具有由GaAs构成的GaAs衬底的半导体器件的方法包括：在GaAs衬底上形成Ti / Pt / Au / Ti电极，该电极包括Pt并具有层状结构，其中顶层由钛在由GaAs制成的部分上形成包括AuGe的集电极; 并且在Ti / Pt / Au / Ti电极和集电极都暴露于表面的状态下对集电极进行热处理。

96. 发明申请

US20080157079A1 BORON PHOSPHIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF 有权
标题翻译：基于磷光体的半导体发光器件及其生产方法
公开(公告)号：US20080157079A1
公开(公告)日：2008-07-03
申请号：US12040107
申请日：2008-02-29
申请人： Takashi UDAGAWA
发明人： Takashi UDAGAWA
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L21/02381 , H01L21/02458 , H01L21/02461 , H01L21/0254 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/28575 , H01L33/145 , H01L33/16 , H01L33/30
摘要： A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from the first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a high-resistance boron phosphide-based semiconductor amorphous layer or a first boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of said first semiconductor layer; a pad electrode formed on said high-resistance or opposite conductivity-type boron phosphide-based semiconductor amorphous layer for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive boron phosphide-based crystalline layer extending optionally to a portion of said boron phosphide-based semiconductor amorphous layer, wherein said pad electrode is in contact with said boron phosphide-based semiconductor crystalline layer at a portion of said pad electrode above the bottom of said pad electrode.
摘要翻译：一种磷化硼基半导体发光器件，包括：晶体衬底; 形成在所述结晶基板上的第一半导体层，所述第一半导体层包括用作基底层并具有不同于所述第一区域的第一区域和第二区域的发光层; 形成在所述第一半导体层的所述第一区域上的磷化硅基半导体非晶层，所述磷化磷基半导体非晶层包括高电阻磷化硼基半导体非晶层或第一磷化硼基半导体非晶层，与所述第一半导体层相反的导电类型; 形成在所述高电阻或相反导电型磷化硅基半导体非晶层上的焊盘电极，用于建立引线键合; 以及形成在所述第一半导体层的所述第二区域上的导电磷化硼基晶体层，所述导电磷化硼基晶体层任选地延伸到所述磷化硼基半导体非晶层的一部分，其中所述焊盘电极接触所述磷化硅基半导体晶体层在所述焊盘电极的位于所述焊盘电极的底部之上的部分处。

97. 发明授权

US07285857B2 GaN-based III—V group compound semiconductor device and p-type electrode for the same 有权
标题翻译： GaN基III-V族化合物半导体器件和p型电极
公开(公告)号：US07285857B2
公开(公告)日：2007-10-23
申请号：US10953282
申请日：2004-09-30
申请人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
发明人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
IPC分类号： H01L29/45 , H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32
摘要： Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.
摘要翻译：提供了使用该p型电极和III-V族GaN基化合物半导体器件。电极包括设置在III-V族氮化物化合物半导体层上并由含有溶质的Zn基材料形成的第一层; 以及层叠在第一层上并由选自Au，Co，Pd，Pt，Ru，Rh，Ir，Ta，Cr，Mn，Mo，Tc，W，Re，Fe中的至少一种形成的第二层，Sc，Ti，Sn，Ge，Sb，Al，ITO和ZnO。 Zn基p型电极具有优异的电学，光学和热学特性。

98. 发明申请

US20070108458A1 Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof 有权
标题翻译：氮化镓系化合物半导体发光元件及其负极
公开(公告)号：US20070108458A1
公开(公告)日：2007-05-17
申请号：US10581751
申请日：2004-12-08
申请人： Koji Kamei
发明人： Koji Kamei
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L33/32 , H01L33/40
摘要： An object of the present invention is to provide a negative electrode which attains excellent Ohmic contact with an n-type gallium nitride-based compound semiconductor layer and which resists deterioration in characteristics which would be caused by heating. Another object of the invention is to provide a gallium nitride-based compound semiconductor light-emitting device having the negative electrode. The inventive gallium nitride-based compound semiconductor light-emitting device comprises an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor formed on a substrate in this order, and has a negative electrode and a positive electrode provided on the n-type semiconductor layer and the p-type semiconductor layer, respectively; wherein the negative electrode comprises a bonding pad layer and a contact metal layer which is in contact with the n-type semiconductor layer, and the contact metal layer is composed of Cr or a Cr alloy and formed through sputtering.
摘要翻译：本发明的目的是提供一种与n型氮化镓系化合物半导体层进行优异的欧姆接触的负极，能够抵抗由加热引起的特性劣化。本发明的另一个目的是提供一种具有负极的氮化镓基化合物半导体发光器件。本发明的氮化镓系化合物半导体发光元件包括氮化镓系化合物半导体的n型半导体层，氮化镓类化合物半导体的发光层和p型半导体层氮化镓基化合物半导体依次形成在基板上，分别具有设置在n型半导体层和p型半导体层上的负极和正极; 其中所述负极包括接合焊盘层和与所述n型半导体层接触的接触金属层，并且所述接触金属层由Cr或Cr合金构成并通过溅射形成。

99. 发明申请

US20070108453A1 N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode 失效
标题翻译：用于n型III族氮化物半导体的N型欧姆电极，具有电极的半导体发光器件，以及用于形成n型欧姆电极的方法
公开(公告)号：US20070108453A1
公开(公告)日：2007-05-17
申请号：US10561438
申请日：2004-07-16
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40 , Y10T29/53178
摘要： The present invention provides a constitution of n-type ohmic electrode suitable for n-type group III nitride semiconductor, and a forming method thereof for providing low contact resistivity. The n-type ohmic electrode is provided to comprise an alloy of aluminum and lanthanum or comprises lanthanum at the junction interface with the n-type group III nitride semiconductor. The method comprising forming a lanthanum-aluminum alloy layer at 300° C. or less to form an n-type ohmic electrode enriched in lanthanum at the junction interface.
摘要翻译：本发明提供适用于n型III族氮化物半导体的n型欧姆电极的结构及其提供低接触电阻率的形成方法。提供n型欧姆电极以包含铝和镧的合金，或者在与n型III族氮化物半导体的结界面处包含镧。该方法包括在300℃或更低温度下形成镧 - 铝合金层，以在接合界面处形成富含镧的n型欧姆电极。

100. 发明授权

US07214325B2 Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment 有权
标题翻译：通过等离子体表面处理在室温n型氮化镓（GaN）上制造欧姆接触的方法
公开(公告)号：US07214325B2
公开(公告)日：2007-05-08
申请号：US10103523
申请日：2002-03-22
申请人： Jong Lam Lee , Ho Won Jang , Jong Kyu Kim , Changmin Jeon
发明人： Jong Lam Lee , Ho Won Jang , Jong Kyu Kim , Changmin Jeon
IPC分类号： H01L21/44
CPC分类号： H01L21/28575
摘要： Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H2O prior to metal contact formation.
摘要翻译：在形成金属接触之前，通过使用氯气感应耦合等离子体（ICP）蚀刻工艺处理GaN表面，在GaN膜上形成低收缩电阻金属接触。有利地，GaN是n型并掺杂有Si，而金属触点包括Ti和Al的交替层。另外，在金属接触形成之前，将GaN膜浸入HCl：H 2 O 2的溶液中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式