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91. 发明申请

US20030160192A1 Charged particle beam exposure method and method for producing charged particle beam exposure data 失效
标题翻译：带电粒子束曝光方法及产生带电粒子束曝光数据的方法
公开(公告)号：US20030160192A1
公开(公告)日：2003-08-28
申请号：US10255830
申请日：2002-09-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ryoichi Inanami , Shunko Magoshi , Atsushi Ando
IPC分类号： H01J037/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31788
摘要： Provided is a charged particle beam exposure method placing an mask having openings in an exposure apparatus that including a deflector which deflects a charged particle beam on the mask, applying a first voltage to the deflector, the first voltage deflects the beam at an first opening, sequentially exposing all the character patterns which can be exposed by the beam shaped by the first opening after a stabilization time set as a function of a voltage has elapsed after applying the first voltage, applying a second voltage to the deflector after all the character patterns have been exposed by the beam shaped by the first opening, the second voltage deflects the beam at a next opening, and exposing all the character patterns which can be exposed by the beam shaped by the next opening after the stabilization time has elapsed after applying the second voltage.
摘要翻译：本发明提供了一种带电粒子束曝光方法，该曝光方法将具有开口的掩模放置在曝光装置中，所述曝光装置包括使带电粒子束偏转在掩模上的偏转器，向偏转器施加第一电压，第一电压在第一开口处偏转光束，在施加第一电压之后已经经过设定为电压的函数的稳定时间之后，通过由第一开口形成的光束可暴露的所有字符图案，在所有字符图案具有所有字符图案之后，向偏转器施加第二电压由第一开口形成的光束曝光，第二电压在下一个开口处偏转光束，并且在应用第二个曝光后的稳定时间过去之后，暴露由下一个开口所形成的光束可能暴露的所有字符图案电压。

92. 发明申请

US20020096646A1 Electron beam proximity exposure apparatus and method 失效
标题翻译：电子束接近曝光装置及方法
公开(公告)号：US20020096646A1
公开(公告)日：2002-07-25
申请号：US09765388
申请日：2001-01-22
发明人： Nobuo Shimazu , Takao Utsumi
IPC分类号： G21G005/00
CPC分类号： B82Y10/00 , B82Y40/00 , G21K1/08 , H01J37/3174 , H01J2237/31788
摘要： The electron beam proximity exposure apparatus comprises: an electron beam source which emits an electron beam; an electron beam shaping device which shapes the electron beam; a mask which has an aperture and is disposed on a path of the shaped electron beam; a deflecting and scanning device which deflects the electron beam to scan the mask with the shaped electron beam; and a stage which holds and moves an object, wherein the mask is disposed in proximity to a surface of the object, and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, wherein the electron beam shaping device shapes the electron beam into a slender beam of which cross section has a small width in a direction of the scanning and a large width in a direction perpendicular to the direction of the scanning. Thus, in the electron beam proximity exposure apparatus, the responsiveness of the on-off control over the application of the electron beam can be improved with keeping the scanning width large without lowering the throughput of the exposure apparatus.
摘要翻译：电子束接近曝光装置包括：发射电子束的电子束源; 形成电子束的电子束整形装置; 具有孔径并设置在成形电子束的路径上的掩模; 偏转和扫描装置，其使电子束偏转以用成形电子束扫描掩模; 以及保持和移动物体的台阶，其中所述掩模设置在所述物体的表面附近，并且与所述掩模的孔径相对应的图案在所述物体的表面上暴露，所述电子束已经通过所述物体孔，其中电子束成形装置将电子束成形为在扫描方向上横截面具有小宽度并且在垂直于扫描方向的方向上具有大宽度的细长光束。因此，在电子束接近曝光装置中，通过保持扫描宽度大而不降低曝光装置的生产能力，可以提高对施加电子束的开 - 关控制的响应性。

93. 发明授权

US06277542B1 Charged-particle-beam projection-exposure methods exhibiting more uniform beam-current density 有权
标题翻译：带电粒子束投影曝光方法表现出更均匀的束流密度
公开(公告)号：US06277542B1
公开(公告)日：2001-08-21
申请号：US09327403
申请日：1999-06-07
申请人： Teruaki Okino , Shintaro Kawata
发明人： Teruaki Okino , Shintaro Kawata
IPC分类号： G03F900
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2037 , H01J37/3174 , H01J2237/31788 , Y10S430/143
摘要： Methods are disclosed for reducing distortions, differences in focal point-positions, and astigmatic blurring of a pattern defined on a reticle and projected onto a sensitive substrate using a charged particle beam. The methods reduce variations in the distribution of beam current as projected onto the substrate. To such end, a charged particle beam passing through pattern features as defined on the reticle is projected onto a region on the substrate. The reticle is provided with multiple “micro features” each having a size less than the resolution limit of the projection-optical system. The micro features can be provided on a portion of the reticle having a low feature density.
摘要翻译：公开了用于减少在掩模版上限定的图案的失真，焦点位置的差异和散光模糊并且使用带电粒子束投射到敏感基板上的方法。该方法减少投射到衬底上的束电流分布的变化。为此，通过在掩模版上限定的图案特征的带电粒子束被投影到基底上的区域上。标线片设置有多个“微特征”，每个具有小于投影光学系统的分辨率极限的尺寸。可以在具有低特征密度的掩模版的一部分上提供微特征。

94. 发明授权

US5998797A Mask for electron beam exposure and electron beam drawing method 失效
标题翻译：电子束曝光和电子束绘制法的掩模
公开(公告)号：US5998797A
公开(公告)日：1999-12-07
申请号：US60078
申请日：1998-04-15
申请人： Ken Nakajima
发明人： Ken Nakajima
IPC分类号： H01L21/027 , G03F7/20 , H01J37/317 , H01J37/00 , G21K5/10
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2037 , H01J37/3174 , H01J2237/31788
摘要： A mask for electron beam exposure has a plurality of holes for drawing contact. These holes have a plurality of sizes that correspond to regions which should be drawn by an electron beam. Among the plurality of holes for drawing contact, one hole is selected according to the designed size. Then, the mask for electron beam exposure is located on the resist film so that the selected hole for drawing contact may be positioned on the contact formation predetermined area of the wafer. Next, the electron beam is applied to the resist film on the contact formation predetermined area of the wafer through the selected hole by irradiating the electron beam from the upper side of the mask. Consequently, the contact pattern is exposed to the resist film.
摘要翻译：用于电子束曝光的掩模具有多个用于拉伸接触的孔。这些孔具有对应于应该被电子束拉伸的区域的多个尺寸。在用于拉伸接触的多个孔中，根据设计尺寸选择一个孔。然后，用于电子束曝光的掩模位于抗蚀剂膜上，使得所选择的用于拉伸接触的孔可以位于晶片的接触形成预定区域上。接下来，通过从掩模的上侧照射电子束，通过所选择的孔将电子束施加到晶片的接触形成预定区域上的抗蚀剂膜上。因此，接触图案暴露于抗蚀剂膜。

95. 发明授权

US5968686A Charged-beam exposure mask and charged-beam exposure method 失效
标题翻译：带电束曝光掩模和带电束曝光方法
公开(公告)号：US5968686A
公开(公告)日：1999-10-19
申请号：US910424
申请日：1997-08-13
申请人： Yasuhisa Yamada , Hiroshi Nozue
发明人： Yasuhisa Yamada , Hiroshi Nozue
IPC分类号： H01L21/027 , G03F7/20 , H01J37/317 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/3174 , H01J2237/31788 , H01J2237/31794
摘要： An electron-beam exposure mask that is able to realize the required pattern transfer accuracy independent of the deflection distortion and aberration of an electron beam. This mask includes a substrate with a first area and a second area, a first plurality of cell apertures formed in the first area of the substrate, and a second plurality of cell apertures formed in the second area of the substrate. The first area of the substrate is designed so that a charged-beam irradiated to the first area has a deflection angle less than a reference angle. The second area of the substrate is designed so that a charged-beam irradiated to the second area has a deflection angle equal to or greater than the reference angle. Each of the first plurality of cell apertures corresponds to fine patterns necessitating high pattern transfer accuracy. Each of the second plurality of cell apertures corresponds to rough patterns unnecessitating the high pattern transfer accuracy.
摘要翻译：能够实现与电子束的偏转失真和像差无关的所需图案转印精度的电子束曝光掩模。该掩模包括具有第一区域和第二区域的基板，形成在基板的第一区域中的第一多个单元孔，以及形成在基板的第二区域中的第二多个单元孔。衬底的第一区域被设计成使得照射到第一区域的带电束具有小于参考角的偏转角。衬底的第二区域被设计成使得照射到第二区域的带电束具有等于或大于参考角的偏转角。第一多个单元孔径中的每一个对应于需要高图案转印精度的精细图案。第二多个单元孔径中的每一个对应于不需要高图案转印精度的粗糙图案。

96. 发明授权

US5952155A Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device 失效
标题翻译：掩模和创建掩模的方法以及电子束曝光方法和电子束曝光装置
公开(公告)号：US5952155A
公开(公告)日：1999-09-14
申请号：US119593
申请日：1998-07-21
申请人： Takayuki Sakakibara , Satoru Sagoh , Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda
发明人： Takayuki Sakakibara , Satoru Sagoh , Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda
IPC分类号： G03F1/20 , H01J37/317 , G03F9/00 , A61N5/00 , G03C5/00 , G21K5/10
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31764 , H01J2237/31788
摘要： A device exposing an object to an electron beam employs a mask formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has a respective single aperture or respective plural, spaced apertures formed therein and having a total area size selected to be smaller than the area size of the aperture defining region, in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.
摘要翻译：将物体暴露于电子束的装置使用由阻挡电子束的材料板形成的掩模，并且其中限定有多个图案曝光块，每个在其中具有一个或多个孔限定区域，并且当被选择时，确定成形的电子束通过其中以使物体上的相应图案曝光。根据控制电子束通过的电流水平，每个孔限定区域具有形成在其中的相应的单个孔或相应的多个间隔开的孔，并且其总面积尺寸被选择为小于孔限定区域的面积尺寸同时减少通过孔的电子束或图案曝光块的每个孔限定部分的孔的库仑相互作用。

97. 发明授权

US5689117A Apparatus for image transfer with charged particle beam, and deflector and mask used with such apparatus 失效
标题翻译：用于具有带电粒子束的图像转印的装置，以及与这种装置一起使用的偏转器和掩模
公开(公告)号：US5689117A
公开(公告)日：1997-11-18
申请号：US548616
申请日：1995-10-26
申请人： Mamoru Nakasuji
发明人： Mamoru Nakasuji
IPC分类号： H01J37/141 , H01J37/147 , H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/141 , H01J37/1471 , H01J37/3174 , H01J2237/152 , H01J2237/1536 , H01J2237/31788
摘要： An image transferring apparatus using a charged particle beam comprising a projection lens for transferring a pattern formed on a mask onto a target by focusing a charged particle beam passing perpendicularly through the mask, and a deflector for deflecting the charged particle beam passing through the mask toward a predetermined direction (x-axis direction) so that a transfer position of the pattern to the target is changed. In this apparatus, the deflector comprises a deflection coil for generating a deflection magnetic field extending in a direction (y-axis direction) perpendicular to the predetermined direction, and correction coils for generating correction magnetic fields extending in the same direction as the deflection magnetic field at areas spaced apart from the center of the deflection magnetic field along the direction (x-axis direction) perpendicular to the direction of the deflection magnetic field.
摘要翻译：一种使用带电粒子束的图像传送装置，包括投影透镜，用于通过聚焦垂直通过掩模的带电粒子束将用于将形成在掩模上的图案转印到靶上的投影透镜，以及用于使通过掩模的带电粒子束偏转的偏转器预定方向（x轴方向），使得图案向目标的转印位置改变。在该装置中，偏转器包括用于产生沿垂直于预定方向的方向（y轴方向）延伸的偏转磁场的偏转线圈和用于产生沿与偏转磁场相同方向延伸的校正磁场的校正线圈在与偏转磁场的方向（x轴方向）垂直的偏转磁场的中心隔开的区域。

98. 发明授权

US5633507A Electron beam lithography system with low brightness 失效
标题翻译：电子束光刻系统具有低亮度
公开(公告)号：US5633507A
公开(公告)日：1997-05-27
申请号：US530448
申请日：1995-09-19
申请人： Hans C. Pfeiffer , Werner Stickel
发明人： Hans C. Pfeiffer , Werner Stickel
IPC分类号： H01J37/305 , H01J37/30 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3175 , H01J2237/083 , H01J2237/31788
摘要： An electron beam system for direct writing applications employs an electron gun having a large emitting surface compared to the prior art and a brightness approximately two orders of magnitude less than prior art systems to illuminate an initial aperture uniformly with a slightly diverging beam that passes efficiently through the aperture, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.
摘要翻译：用于直接写入应用的电子束系统采用与现有技术相比具有大的发射表面的电子枪，并且比现有技术的系统的亮度大约比现有技术系统稍微发光的光束均匀地照亮初始孔径大约两个数量级，该光束有效地通过孔，第一组可控偏转器，用于扫描平行于系统轴线的光罩上的光束，在每次曝光中施加掩模版子像的图案，其中第一可变轴透镜将初始光圈的图像聚焦在所述标线片，第二可变轴透镜对所述图案化光束进行准直，所述第二组可控偏转器将所述光束返回到所述晶片上方的适当位置;以及第三可变轴透镜，用于将所述标线片子场的图像聚焦在所述晶片上，与校正元件一起应用可以随每个子场变化的像差校正，从而从t提供高通量他使用具有可变轴透镜的低像差特征的每子场107个像素的并行处理，并且能够定制与高斯系统相关联的位置相关校正，该高斯系统逐像素地编码图像。

99. 发明授权

US5552611A Pseudo-random registration masks for projection lithography tool 失效
标题翻译：用于投影光刻工具的伪随机对准掩模
公开(公告)号：US5552611A
公开(公告)日：1996-09-03
申请号：US466565
申请日：1995-06-06
申请人： William A. Enichen
发明人： William A. Enichen
IPC分类号： H01L21/027 , G03F1/20 , H01J37/304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3045 , H01J2237/30438 , H01J2237/31788
摘要： An exposure mask for a particle beam projection system used in the manufacture of semiconductors includes pseudo-random mask alignment marks positioned on the exposure mask that match up with corresponding pseudo-random substrate alignment marks. The substrate alignment marks are made up of three repetitions of the pseudo-random code in the mask alignment marks formed as features on the substrate. The alignment marks act together to produce a backscattered alignment signal with an arbitrarily large capture distance, a single peak on a uniform background that makes it easy to detect the aligned position, a high signal to noise ratio and no false peaks that might lead to misalignment.
摘要翻译：用于半导体制造中使用的粒子束投影系统的曝光掩模包括位于曝光掩模上的与对应的伪随机衬底对准标记匹配的伪随机掩模对准标记。衬底对准标记由形成为衬底上的特征的掩模对准标记中的三次重复的伪随机码组成。对准标记一起起作用以产生具有任意大的捕获距离的背向散射对准信号，均匀背景上的单个峰值，使得易于检测对准位置，高信噪比和没有可能导致未对准的假峰值。

100. 发明授权

US5545902A Electron beam lithography system 失效
公开(公告)号：US5545902A
公开(公告)日：1996-08-13
申请号：US515437
申请日：1995-08-15
申请人： Hans C. Pfeiffer , Werner Stickel
发明人： Hans C. Pfeiffer , Werner Stickel
IPC分类号： G03F7/20 , H01J37/317 , H01L21/027 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30455 , H01J2237/31776 , H01J2237/31788
摘要： An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.

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