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    • 93. 发明申请
    • DEVICE IDENTIFICATION AND TEMPERATURE SENSOR CIRCUIT
    • 器件识别和温度传感器电路
    • US20130049777A1
    • 2013-02-28
    • US13238010
    • 2011-09-21
    • Shen WangEdward T. Nelson
    • Shen WangEdward T. Nelson
    • G01R27/08G01R5/22
    • H04N5/232G01K7/01
    • An integrated circuit includes a device identification circuit and a temperature sensor diode connected in parallel from a common node. The device identification circuit includes a resistor connected to a diode-connected transistor. The device identification circuit and the temperature sensor diode are adapted to not be simultaneously operating in an ON state. A first voltage is applied to the common node to place the device identification circuit in an ON state and place the temperature sensor diode in an OFF state to identify the integrated circuit. A second voltage is applied to the common node to place the device identification circuit in an OFF state and place the temperature sensor diode in an ON state to determine a temperature of the integrated circuit.
    • 集成电路包括从公共节点并联连接的器件识别电路和温度传感器二极管。 器件识别电路包括连接到二极管连接的晶体管的电阻器。 设备识别电路和温度传感器二极管适于不处于ON状态。 将第一电压施加到公共节点以将器件识别电路置于ON状态,并将温度传感器二极管置于OFF状态以识别集成电路。 将第二电压施加到公共节点以将设备识别电路置于OFF状态,并将温度传感器二极管置于ON状态以确定集成电路的温度。
    • 96. 发明授权
    • Low voltage temperature sensor and use thereof for autonomous multiprobe measurement device
    • 低电压温度传感器及其自动多探头测量装置的应用
    • US08354875B2
    • 2013-01-15
    • US12731455
    • 2010-03-25
    • Junmou ZhangLew G. Chua-Eoan
    • Junmou ZhangLew G. Chua-Eoan
    • H01L35/00
    • G01K7/01G01K2215/00G05F3/30
    • A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.
    • 提出了一种测量集成电路内温度的带隙传感器。 传感器可以包括具有与第一电阻器和第一电流源串联耦合的发射极节点的第一晶体管,其中PTAT电流流过第一电阻器,以及第二晶体管,具有耦合到第一电阻器的基极节点的基极节点 晶体管和耦合到第一晶体管的集电极节点的集电极节点,其中第一和第二晶体管是二极管连接的。 传感器还可以包括向第一电流源提供负反馈的第一运算放大器,其中所述负反馈与所述第一和第二晶体管的基极 - 发射极电压的差异相关;以及第二运算放大器, 跨越第二电阻器的第二晶体管的发射极电压,其中CTAT电流流过第二电阻器。