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91. 发明授权

US09045844B2 Method for peeling group 13 element nitride film 有权
标题翻译：剥离13族元素氮化物膜的方法
公开(公告)号：US09045844B2
公开(公告)日：2015-06-02
申请号：US14167567
申请日：2014-01-29
申请人： NGK INSULATORS, LTD.
发明人： Makoto Iwai , Takayuki Hirao , Takashi Yoshino
IPC分类号： H01L21/00 , C30B9/10 , C30B29/40 , C30B33/06 , H01L33/00
CPC分类号： C30B9/10 , C30B19/02 , C30B29/403 , C30B33/06 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10T156/11
摘要： A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and the group 13 element under nitrogen containing atmosphere. The film 3 of the nitride of the group 13 element includes an inclusion distributed layer 3a in a region distant from an interface 11a of the film 3 of the nitride of the group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a. Laser light A is irradiated from the side of the back face 1b of the seed crystal substrate 11 to peel the single crystal 3 of the nitride of the group 13 element from the seed crystal substrate 11 by laser lift-off method.
摘要翻译：第13族元素的氮化物的膜3通过助熔剂在含氮气氛的含熔剂和13族元素的熔体中在籽晶衬底11上生长。第13族元素的氮化物的膜3在与晶种基板11一侧的第13族元素的氮化物的膜3的界面11a以外的区域中包含夹杂物分布层3a，来自熔体的组分和包含物耗尽层3b，其中包含物耗尽。设置在层3a上。从晶种基板11的背面侧侧照射激光A，通过激光剥离法从晶种基板11剥离第13族元素的氮化物的单晶3。

92. 发明授权

US09034738B2 Method for growing a nitride-based III-V Group compound semiconductor 有权
标题翻译：用于生长氮化物III-V族化合物半导体的方法
公开(公告)号：US09034738B2
公开(公告)日：2015-05-19
申请号：US11533965
申请日：2006-09-21
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/04 , C30B25/04 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/46
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

93. 发明授权

US09028611B2 Method for producing group III nitride semiconductor 有权
标题翻译： III族氮化物半导体的制造方法
公开(公告)号：US09028611B2
公开(公告)日：2015-05-12
申请号：US12926995
申请日：2010-12-22
申请人： Shiro Yamazaki
发明人： Shiro Yamazaki
IPC分类号： C30B19/10 , C30B19/04 , C30B29/40 , C30B9/10 , C30B19/02 , C30B9/06
CPC分类号： C30B29/403 , C30B9/06 , C30B9/10 , C30B19/02 , C30B19/04 , C30B29/406
摘要： A method for producing a Group III nitride semiconductor includes reacting a molten mixture containing at least a Group III element and an alkali metal with a gas containing at least nitrogen, to thereby grow a Group III nitride semiconductor crystal on the seed crystal. The method includes forming a template substrate including a sapphire substrate and a first Group III nitride semiconductor layer as the seed crystal which is formed by vapor phase growth and which includes a c-plane as a main plane is employed, and the template substrate is placed and maintained in the molten mixture under conditions where crystal growth of the Group III nitride semiconductor is inhibited, to thereby partially melt back a plurality of separated parts of the first Group III nitride semiconductor layer to such a depth that the sapphire substrate is partially exposed.
摘要翻译：制备III族氮化物半导体的方法包括使至少含有III族元素和碱金属的熔融混合物与至少含有氮的气体反应，从而在晶种上生长III族氮化物半导体晶体。该方法包括形成包含蓝宝石衬底和第一III族氮化物半导体层的模板衬底，作为通过气相生长形成并且包括c面作为主平面的晶种，并且将模板衬底放置并且在III族氮化物半导体的晶体生长被抑制的条件下保持在熔融混合物中，从而部分地将第一III族氮化物半导体层的多个分离部分熔融回到蓝宝石衬底部分暴露的深度。

94. 发明授权

US09023721B2 Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods 有权
标题翻译：在金属氮化物生长模板层上形成本体III族氮化物材料的方法以及通过这些方法形成的结构
公开(公告)号：US09023721B2
公开(公告)日：2015-05-05
申请号：US13988987
申请日：2011-11-23
申请人： Chantal Arena , Ronald Thomas Bertram , Ed Lindow
发明人： Chantal Arena , Ronald Thomas Bertram , Ed Lindow
IPC分类号： H01L21/36 , H01L21/02 , C23C16/02 , C23C16/30 , C30B25/02 , C30B29/40
CPC分类号： H01L21/0254 , C23C16/0272 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/0262
摘要： Bulk III-nitride semiconductor materials are deposited in an HPVE process using a metal trichloride precursor on a metal nitride template layer of a growth substrate. Deposition of the bulk III-nitride semiconductor material may be performed without ex situ formation of the template layer using a MOCVD process. In some embodiments, a nucleation template layer is formed ex situ using a non-MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In additional embodiments, a nucleation template layer is formed in situ using an MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In further embodiments, a nucleation template layer is formed in situ using an HVPE process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process.
摘要翻译：使用金属三氯化物前体在生长衬底的金属氮化物模板层上的HPVE工艺中沉积块状III族氮化物半导体材料。本体III族氮化物半导体材料的沉积可以使用MOCVD工艺在不原位形成模板层的情况下进行。在一些实施例中，在使用HVPE工艺在模板层上沉积体III族氮化物半导体材料之前，使用非MOCVD工艺在原位形成成核模板层。在另外的实施例中，在使用HVPE工艺在模板层上沉积体III族氮化物半导体材料之前，使用MOCVD工艺原位形成成核模板层。在另外的实施方案中，使用HVPE工艺在模板层上沉积III族氮化物半导体材料之前，使用HVPE工艺原位形成成核模板层。

95. 发明申请

US20150079329A1 METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE 有权
标题翻译：用于生产氮化钛的大的单晶的方法和装置
公开(公告)号：US20150079329A1
公开(公告)日：2015-03-19
申请号：US14520615
申请日：2014-10-22
申请人： Crystal IS, Inc.
发明人： Leo Schowalter , Glen A. Slack , Juan Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
IPC分类号： C30B25/10 , C30B25/16 , C30B29/40 , H01L29/20
CPC分类号： C30B25/16 , C30B11/003 , C30B23/00 , C30B23/025 , C30B25/10 , C30B25/14 , C30B25/20 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02634 , H01L29/04 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/32 , H01L29/66462 , H01L29/7787 , H01L33/0075 , H01L33/025 , H01L33/12 , H01L33/325 , H01L2924/0002 , Y10T428/21 , H01L2924/00
摘要： Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
摘要翻译：具有直径大于约25mm的AlN的大体积单晶和约10,000cm-2或更小的位错密度以及具有由这些本体晶体制造的任何所需晶体取向表面的高质量AlN衬底。

96. 发明申请

US20150050770A1 PROCESS FOR PRODUCING LAYERED MEMBER AND LAYERED MEMBER 有权
标题翻译：生产分层会员和分层会员的方法
公开(公告)号：US20150050770A1
公开(公告)日：2015-02-19
申请号：US14529575
申请日：2014-10-31
申请人： Hamamatsu Photonics K.K.
发明人： Tokuaki NIHASHI , Masatomo SUMIYA , Minoru HAGINO , Shunro FUKE
IPC分类号： H01L31/18
CPC分类号： H01L31/1856 , C30B29/403 , H01J1/34 , H01J9/12 , H01J40/06 , H01L31/1848 , H01L31/1852 , Y10S117/902 , Y10S117/915
摘要： The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.
摘要翻译：本发明的目的是提供一种允许较高量子效率的光电表面部件。为了实现该目的，光电表面部件1a是由氮化物型半导体材料形成的结晶层，并且包括氮化物半导体晶体层10，其中从第一表面101到第二表面102的方向为负极性晶体方向，沿着氮化物半导体晶体层10的第一表面101形成的粘合剂层12和粘合剂层12粘合固定在玻璃基板14之间的玻璃基板14 和氮化物半导体晶体层10。

97. 发明授权

US08946723B2 Epitaxial substrate and method for manufacturing epitaxial substrate 有权
标题翻译：外延衬底和外延衬底的制造方法
公开(公告)号：US08946723B2
公开(公告)日：2015-02-03
申请号：US13658293
申请日：2012-10-23
申请人： NGK Insulators, Ltd.
发明人： Makoto Miyoshi , Shigeaki Sumiya , Mikiya Ichimura , Sota Maehara , Mitsuhiro Tanaka
IPC分类号： H01L31/0256 , H01L21/02 , C30B25/18 , C30B29/40 , H01L29/04 , H01L29/15 , H01L29/20 , H01L29/205
CPC分类号： H01L21/02381 , C30B25/183 , C30B29/403 , H01L21/02458 , H01L21/02494 , H01L21/02507 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/155 , H01L29/2003 , H01L29/205
摘要： Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base. The epitaxial substrate includes a (111) single crystal Si substrate and a buffer layer including a plurality of first lamination units. Each of those units includes a composition modulation layer formed of a first composition layer made of AlN and a second composition layer made of AlxGa1-xN being alternately laminated, and a first intermediate layer made of AlyGa1-yN (0≦y x(n) is satisfied, where n represents the number of laminations of each of the first and second composition layers, and x(i) represents the value of x in i-th one of the second composition layers as counted from the base substrate side. The second composition layer is coherent to the first composition layer, and the first intermediate layer is coherent to the composition modulation layer.
摘要翻译：本发明提供一种无硅外延基板，其以硅基板为基体，具有优异的击穿电压特性。外延衬底包括（111）单晶Si衬底和包括多个第一层压单元的缓冲层。这些单元中的每一个包括由AlN制成的第一组合物层和由Al x Ga 1-x N交替层叠的第二组合物层和由Al y Ga 1-y N（0＆lt; 1; y <1）制成的第一中间层形成的组成调制层。 x（1）≥x（2）≥的关系。。。 ≧x（n-1）≧x（n）和x（1）> x（n），其中n表示第一和第二组合物层中的每一个的叠层数，x（i）从基底侧计数的第二组合物层的第i个中的x。第二组合物层与第一组合物层相干，第一中间层与组成调制层相干。

98. 发明申请

US20150028457A1 EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：外延衬底，半导体器件和制造半导体器件的方法
公开(公告)号：US20150028457A1
公开(公告)日：2015-01-29
申请号：US14376475
申请日：2013-02-14
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Hiroshi Shikauchi , Hirokazu Goto , Ken Sato , Masaru Shinomiya , Keitaro Tsuchiya , Kazunori Hagimoto
IPC分类号： H01L21/322 , H01L29/34 , H01L29/20
CPC分类号： H01L21/3228 , C30B25/183 , C30B25/186 , C30B29/403 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02587 , H01L29/0657 , H01L29/2003 , H01L29/34 , H01L29/7786
摘要： The present invention includes: a silicon-based substrate; and an epitaxial growth layer that has a configuration in which first and second nitride semiconductor layers having different lattice constants and thermal expansion coefficients are alternately laminated, and is arranged on the silicon-based substrate so that a film thickness thereof is gradually reduced at an outer edge portion. As a result, there are provided an epitaxial substrate and a semiconductor device in which generation of cracks at the outer edge portion is suppressed, and a method for manufacturing the semiconductor device.
摘要翻译：本发明包括：硅基基板; 以及外延生长层，其具有交替层叠具有不同晶格常数和热膨胀系数的第一和第二氮化物半导体层的配置，并且布置在硅基基板上，使得其膜厚在外部逐渐减小边缘部分。结果，提供了外延基板和半导体器件，其中外部边缘部分产生裂纹被抑制，以及制造半导体器件的方法。

99. 发明授权

US08940095B2 Apparatus for growth of single crystals including a solute feeder 有权
标题翻译：包括溶质进料器的单晶生长装置
公开(公告)号：US08940095B2
公开(公告)日：2015-01-27
申请号：US13289273
申请日：2011-11-04
申请人： Partha Dutta
发明人： Partha Dutta
IPC分类号： C30B9/06 , C30B11/06 , C30B29/40 , C30B29/48 , C30B35/00
CPC分类号： C30B11/06 , C30B29/40 , C30B29/403 , C30B29/48 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1028 , Y10T117/1052 , Y10T117/1092 , Y10T428/2982
摘要： An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm−2 and a radial compositional variation of less than 1%.
摘要翻译：提供均匀的多组分单晶的生长装置。单晶材料具有至少三个元素，并且具有至少50mm的直径，小于100cm -2的位错密度和小于1％的径向组成变化。

100. 发明申请

US20150023862A1 METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL 有权
标题翻译：生产硝酸单晶的方法
公开(公告)号：US20150023862A1
公开(公告)日：2015-01-22
申请号：US14500516
申请日：2014-09-29
申请人： Mitsubishi Chemical Corporation , Tohoku University , The Japan Steel Works, Ltd.
发明人： Toru ISHIGURO , Quanxi BAO , Chiaki YOKOYAMA , Daisuke TOMIDA , Shigefusa CHICHIBU , Rinzo KAYANO , Mutsuo UEDA , Makoto SAITO , Yuji KAGAMITANI
IPC分类号： C30B7/10 , C30B29/40 , C30B7/14
CPC分类号： C30B7/105 , C30B7/14 , C30B29/403 , C30B29/406
摘要： A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.
摘要翻译：本发明的第一个目的是提供即使在低压条件下有效地生长氮化物单晶的方法。本发明涉及一种氮化物单晶的制造方法，其特征在于，在具有六方晶系结晶结构的晶种的表面上，通过设置具有晶种的反应容器内的压力，含氮溶剂，含有氟原子的矿化剂和放置在其中的原料至5〜200MPa，进行控制，使得含氮溶剂处于超临界状态或亚临界状态。

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